TW302509B - - Google Patents
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- Publication number
- TW302509B TW302509B TW085108371A TW85108371A TW302509B TW 302509 B TW302509 B TW 302509B TW 085108371 A TW085108371 A TW 085108371A TW 85108371 A TW85108371 A TW 85108371A TW 302509 B TW302509 B TW 302509B
- Authority
- TW
- Taiwan
- Prior art keywords
- gas
- etching
- reaction chamber
- manufacturing
- semiconductor device
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
- H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
- H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
- H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
Landscapes
- Drying Of Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7183652A JPH0936091A (ja) | 1995-07-20 | 1995-07-20 | 半導体装置の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW302509B true TW302509B (https=) | 1997-04-11 |
Family
ID=16139556
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW085108371A TW302509B (https=) | 1995-07-20 | 1996-07-10 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPH0936091A (https=) |
| KR (1) | KR100215601B1 (https=) |
| TW (1) | TW302509B (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1027781A (ja) * | 1996-07-10 | 1998-01-27 | Daikin Ind Ltd | エッチングガスおよびクリーニングガス |
| DE19706682C2 (de) * | 1997-02-20 | 1999-01-14 | Bosch Gmbh Robert | Anisotropes fluorbasiertes Plasmaätzverfahren für Silizium |
| WO2018159368A1 (ja) * | 2017-02-28 | 2018-09-07 | セントラル硝子株式会社 | ドライエッチング剤、ドライエッチング方法及び半導体装置の製造方法 |
-
1995
- 1995-07-20 JP JP7183652A patent/JPH0936091A/ja active Pending
-
1996
- 1996-07-10 TW TW085108371A patent/TW302509B/zh not_active IP Right Cessation
- 1996-07-19 KR KR1019960029111A patent/KR100215601B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR970008375A (ko) | 1997-02-24 |
| KR100215601B1 (ko) | 1999-08-16 |
| JPH0936091A (ja) | 1997-02-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |