KR100215601B1 - 반도체장치의 제조방법 - Google Patents

반도체장치의 제조방법 Download PDF

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Publication number
KR100215601B1
KR100215601B1 KR1019960029111A KR19960029111A KR100215601B1 KR 100215601 B1 KR100215601 B1 KR 100215601B1 KR 1019960029111 A KR1019960029111 A KR 1019960029111A KR 19960029111 A KR19960029111 A KR 19960029111A KR 100215601 B1 KR100215601 B1 KR 100215601B1
Authority
KR
South Korea
Prior art keywords
gas
etching
reaction chamber
reaction
fluorocarbon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019960029111A
Other languages
English (en)
Korean (ko)
Other versions
KR970008375A (ko
Inventor
마사토시 히구치
Original Assignee
니시무로 타이죠
가부시끼가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 니시무로 타이죠, 가부시끼가이샤 도시바 filed Critical 니시무로 타이죠
Publication of KR970008375A publication Critical patent/KR970008375A/ko
Application granted granted Critical
Publication of KR100215601B1 publication Critical patent/KR100215601B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas

Landscapes

  • Drying Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • ing And Chemical Polishing (AREA)
KR1019960029111A 1995-07-20 1996-07-19 반도체장치의 제조방법 Expired - Fee Related KR100215601B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7183652A JPH0936091A (ja) 1995-07-20 1995-07-20 半導体装置の製造方法
JP95-183652 1995-07-20

Publications (2)

Publication Number Publication Date
KR970008375A KR970008375A (ko) 1997-02-24
KR100215601B1 true KR100215601B1 (ko) 1999-08-16

Family

ID=16139556

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960029111A Expired - Fee Related KR100215601B1 (ko) 1995-07-20 1996-07-19 반도체장치의 제조방법

Country Status (3)

Country Link
JP (1) JPH0936091A (https=)
KR (1) KR100215601B1 (https=)
TW (1) TW302509B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190124258A (ko) * 2017-02-28 2019-11-04 샌트랄 글래스 컴퍼니 리미티드 드라이 에칭제, 드라이 에칭 방법 및 반도체 장치의 제조방법

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1027781A (ja) * 1996-07-10 1998-01-27 Daikin Ind Ltd エッチングガスおよびクリーニングガス
DE19706682C2 (de) * 1997-02-20 1999-01-14 Bosch Gmbh Robert Anisotropes fluorbasiertes Plasmaätzverfahren für Silizium

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190124258A (ko) * 2017-02-28 2019-11-04 샌트랄 글래스 컴퍼니 리미티드 드라이 에칭제, 드라이 에칭 방법 및 반도체 장치의 제조방법
KR102303686B1 (ko) 2017-02-28 2021-09-17 샌트랄 글래스 컴퍼니 리미티드 드라이 에칭제, 드라이 에칭 방법 및 반도체 장치의 제조방법

Also Published As

Publication number Publication date
KR970008375A (ko) 1997-02-24
JPH0936091A (ja) 1997-02-07
TW302509B (https=) 1997-04-11

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