TW301034B - - Google Patents
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- Publication number
- TW301034B TW301034B TW085106813A TW85106813A TW301034B TW 301034 B TW301034 B TW 301034B TW 085106813 A TW085106813 A TW 085106813A TW 85106813 A TW85106813 A TW 85106813A TW 301034 B TW301034 B TW 301034B
- Authority
- TW
- Taiwan
- Prior art keywords
- soi
- trench
- patent application
- item
- transistor according
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 12
- 210000004709 eyebrow Anatomy 0.000 claims description 11
- 239000012535 impurity Substances 0.000 claims description 9
- 150000002500 ions Chemical class 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 125000006850 spacer group Chemical group 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 3
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims 2
- 230000002079 cooperative effect Effects 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 11
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 239000013078 crystal Substances 0.000 description 3
- 238000009751 slip forming Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
- H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32055—Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/021—Manufacture or treatment using multiple gate spacer layers, e.g. bilayered sidewall spacers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0135—Manufacturing their gate conductors
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950016420A KR100227644B1 (ko) | 1995-06-20 | 1995-06-20 | 반도체 소자의 트랜지스터 제조방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW301034B true TW301034B (cs) | 1997-03-21 |
Family
ID=19417585
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW085106813A TW301034B (cs) | 1995-06-20 | 1996-06-06 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPH098308A (cs) |
| KR (1) | KR100227644B1 (cs) |
| CN (1) | CN1050701C (cs) |
| TW (1) | TW301034B (cs) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3408437B2 (ja) | 1998-10-30 | 2003-05-19 | シャープ株式会社 | 半導体装置の製造方法 |
| KR100343472B1 (ko) * | 2000-08-31 | 2002-07-18 | 박종섭 | 모스 트랜지스터의 제조방법 |
| US6780686B2 (en) * | 2002-03-21 | 2004-08-24 | Advanced Micro Devices, Inc. | Doping methods for fully-depleted SOI structures, and device comprising the resulting doped regions |
| US7022575B2 (en) * | 2003-10-29 | 2006-04-04 | Sanyo Electric Co., Ltd. | Manufacturing method of semiconductor device |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02185068A (ja) * | 1989-01-12 | 1990-07-19 | Toshiba Corp | 電界効果型トランジスタの製造方法 |
| JPH0766972B2 (ja) * | 1989-06-22 | 1995-07-19 | 三菱電機株式会社 | 半導体装置の製造方法 |
| JPH03155166A (ja) * | 1989-11-14 | 1991-07-03 | Fuji Electric Co Ltd | 薄膜半導体素子 |
| JP2660451B2 (ja) * | 1990-11-19 | 1997-10-08 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| JPH05259457A (ja) * | 1992-03-16 | 1993-10-08 | Sharp Corp | 薄膜トランジスタ |
-
1995
- 1995-06-20 KR KR1019950016420A patent/KR100227644B1/ko not_active Expired - Fee Related
-
1996
- 1996-06-06 TW TW085106813A patent/TW301034B/zh active
- 1996-06-13 JP JP8152113A patent/JPH098308A/ja active Pending
- 1996-06-19 CN CN96108211A patent/CN1050701C/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR100227644B1 (ko) | 1999-11-01 |
| KR970004069A (ko) | 1997-01-29 |
| CN1050701C (zh) | 2000-03-22 |
| JPH098308A (ja) | 1997-01-10 |
| CN1148273A (zh) | 1997-04-23 |
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