TW291572B - - Google Patents
Info
- Publication number
- TW291572B TW291572B TW085105355A TW85105355A TW291572B TW 291572 B TW291572 B TW 291572B TW 085105355 A TW085105355 A TW 085105355A TW 85105355 A TW85105355 A TW 85105355A TW 291572 B TW291572 B TW 291572B
- Authority
- TW
- Taiwan
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System the conductive layers comprising semiconducting material
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950010983A KR100208439B1 (ko) | 1995-05-04 | 1995-05-04 | 반도체 소자의 폴리실리콘층 형성방법 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW291572B true TW291572B (zh) | 1996-11-21 |
Family
ID=19413757
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW085105355A TW291572B (zh) | 1995-05-04 | 1996-05-04 |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPH08306642A (zh) |
KR (1) | KR100208439B1 (zh) |
CN (1) | CN1083158C (zh) |
DE (1) | DE19617833A1 (zh) |
GB (1) | GB2300517B (zh) |
TW (1) | TW291572B (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6107192A (en) * | 1997-12-30 | 2000-08-22 | Applied Materials, Inc. | Reactive preclean prior to metallization for sub-quarter micron application |
JP2010123866A (ja) | 2008-11-21 | 2010-06-03 | Sharp Corp | 半導体装置及びその製造方法 |
KR102178535B1 (ko) | 2014-02-19 | 2020-11-13 | 삼성전자주식회사 | 반도체 소자의 제조 방법 |
CN106571289B (zh) * | 2015-10-13 | 2020-01-03 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制备方法、电子装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1239706A (en) * | 1984-11-26 | 1988-07-26 | Hisao Hayashi | Method of forming a thin semiconductor film |
JPH0322527A (ja) * | 1989-06-20 | 1991-01-30 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH0350823A (ja) * | 1989-07-19 | 1991-03-05 | Nec Corp | 半導体装置の製造方法 |
JP3125302B2 (ja) * | 1990-11-21 | 2001-01-15 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
JPH05275365A (ja) * | 1992-03-30 | 1993-10-22 | Oki Electric Ind Co Ltd | 半導体素子の製造方法 |
US5266514A (en) * | 1992-12-21 | 1993-11-30 | Industrial Technology Research Institute | Method for producing a roughened surface capacitor |
JPH0729852A (ja) * | 1993-07-07 | 1995-01-31 | Kawasaki Steel Corp | 半導体装置の製造方法 |
JP2697645B2 (ja) * | 1994-10-31 | 1998-01-14 | 日本電気株式会社 | 半導体装置の製造方法 |
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1995
- 1995-05-04 KR KR1019950010983A patent/KR100208439B1/ko not_active IP Right Cessation
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1996
- 1996-04-26 JP JP8106869A patent/JPH08306642A/ja active Pending
- 1996-04-30 GB GB9608822A patent/GB2300517B/en not_active Expired - Fee Related
- 1996-05-03 DE DE19617833A patent/DE19617833A1/de not_active Ceased
- 1996-05-04 TW TW085105355A patent/TW291572B/zh active
- 1996-05-04 CN CN96107491A patent/CN1083158C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR100208439B1 (ko) | 1999-07-15 |
GB9608822D0 (en) | 1996-07-03 |
CN1083158C (zh) | 2002-04-17 |
GB2300517B (en) | 1999-07-28 |
GB2300517A (en) | 1996-11-06 |
JPH08306642A (ja) | 1996-11-22 |
DE19617833A1 (de) | 1996-11-07 |
CN1144397A (zh) | 1997-03-05 |