GB9608822D0 - Method of manufacturing a semiconductor device - Google Patents

Method of manufacturing a semiconductor device

Info

Publication number
GB9608822D0
GB9608822D0 GBGB9608822.4A GB9608822A GB9608822D0 GB 9608822 D0 GB9608822 D0 GB 9608822D0 GB 9608822 A GB9608822 A GB 9608822A GB 9608822 D0 GB9608822 D0 GB 9608822D0
Authority
GB
United Kingdom
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GBGB9608822.4A
Other versions
GB2300517B (en
GB2300517A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of GB9608822D0 publication Critical patent/GB9608822D0/en
Publication of GB2300517A publication Critical patent/GB2300517A/en
Application granted granted Critical
Publication of GB2300517B publication Critical patent/GB2300517B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System the conductive layers comprising semiconducting material
GB9608822A 1995-05-04 1996-04-30 Method of manufacturing a semiconductor device Expired - Fee Related GB2300517B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950010983A KR100208439B1 (en) 1995-05-04 1995-05-04 Method of forming polysilicon layer in semiconductor device

Publications (3)

Publication Number Publication Date
GB9608822D0 true GB9608822D0 (en) 1996-07-03
GB2300517A GB2300517A (en) 1996-11-06
GB2300517B GB2300517B (en) 1999-07-28

Family

ID=19413757

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9608822A Expired - Fee Related GB2300517B (en) 1995-05-04 1996-04-30 Method of manufacturing a semiconductor device

Country Status (6)

Country Link
JP (1) JPH08306642A (en)
KR (1) KR100208439B1 (en)
CN (1) CN1083158C (en)
DE (1) DE19617833A1 (en)
GB (1) GB2300517B (en)
TW (1) TW291572B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6107192A (en) * 1997-12-30 2000-08-22 Applied Materials, Inc. Reactive preclean prior to metallization for sub-quarter micron application
JP2010123866A (en) 2008-11-21 2010-06-03 Sharp Corp Semiconductor device and method of manufacturing the same
KR102178535B1 (en) 2014-02-19 2020-11-13 삼성전자주식회사 Methods of manufacturing semiconductor devices
CN106571289B (en) * 2015-10-13 2020-01-03 中芯国际集成电路制造(上海)有限公司 Semiconductor device, preparation method thereof and electronic device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1239706A (en) * 1984-11-26 1988-07-26 Hisao Hayashi Method of forming a thin semiconductor film
JPH0322527A (en) * 1989-06-20 1991-01-30 Fujitsu Ltd Manufacture of semiconductor device
JPH0350823A (en) * 1989-07-19 1991-03-05 Nec Corp Manufacture of semiconductor device
JP3125302B2 (en) * 1990-11-21 2001-01-15 セイコーエプソン株式会社 Method for manufacturing semiconductor device
JPH05275365A (en) * 1992-03-30 1993-10-22 Oki Electric Ind Co Ltd Manufacture of semiconductor element
US5266514A (en) * 1992-12-21 1993-11-30 Industrial Technology Research Institute Method for producing a roughened surface capacitor
JPH0729852A (en) * 1993-07-07 1995-01-31 Kawasaki Steel Corp Fabrication of semiconductor device
JP2697645B2 (en) * 1994-10-31 1998-01-14 日本電気株式会社 Method for manufacturing semiconductor device

Also Published As

Publication number Publication date
KR100208439B1 (en) 1999-07-15
CN1083158C (en) 2002-04-17
GB2300517B (en) 1999-07-28
GB2300517A (en) 1996-11-06
JPH08306642A (en) 1996-11-22
DE19617833A1 (en) 1996-11-07
TW291572B (en) 1996-11-21
CN1144397A (en) 1997-03-05

Similar Documents

Publication Publication Date Title
KR0169945B1 (en) Method of manufacturing a semiconductor device
GB2306779B (en) Method of fabricating semiconductor device
GB9713223D0 (en) Method of fabricating a semiconductor device
GB2306050B (en) A method of manufacturing semiconductor devices
GB9810238D0 (en) Method of fabricating a semiconductor device
GB2309825B (en) Semiconductor device and a method of fabricating the same
EP0675530A3 (en) Manufacturing method of a field effect semiconductor device.
GB9626363D0 (en) A method of manufacturing a semiconductor device
EP0755070A3 (en) A semiconductor device and its manufacturing method
GB2300304B (en) Method of producing a semiconductor device
GB2331594B (en) A method of manufacturing a semiconductor device
GB2306778B (en) Semiconductor device and a method of manufacturing the same
SG44710A1 (en) A dielectric a manufacturing method thereof and semiconductor device
GB2300303B (en) Method of producing a semiconductor device
GB2330692B (en) Method of fabricating a semiconductor device
GB2323967B (en) Method of forming a semiconductor device
GB2320805B (en) Method of fabricating a semiconductor device
GB2308737B (en) Method of forming a contact hole of a semiconductor device
GB2300517B (en) Method of manufacturing a semiconductor device
GB2310759B (en) Method of manufacturing a semiconductor device
GB9704055D0 (en) Method of manufacturing a semiconductor device
GB9824981D0 (en) Method of forming a semiconductor device
GB2313477B (en) Method of manufacturing a semiconductor device
GB9612941D0 (en) Method of manufacturing a semi-conductor device
GB9319730D0 (en) Manufacturing method of a semiconductor device

Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20100430