CN1144397A - Method of manufacturing semiconductor device - Google Patents
Method of manufacturing semiconductor device Download PDFInfo
- Publication number
- CN1144397A CN1144397A CN96107491A CN96107491A CN1144397A CN 1144397 A CN1144397 A CN 1144397A CN 96107491 A CN96107491 A CN 96107491A CN 96107491 A CN96107491 A CN 96107491A CN 1144397 A CN1144397 A CN 1144397A
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- Prior art keywords
- amorphous silicon
- film
- silicon substrate
- silicon film
- deposit
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 73
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 59
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 59
- 239000010703 silicon Substances 0.000 claims abstract description 59
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 28
- 229920005591 polysilicon Polymers 0.000 claims abstract description 28
- 239000011261 inert gas Substances 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims description 43
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 16
- 238000009832 plasma treatment Methods 0.000 claims description 13
- 239000003344 environmental pollutant Substances 0.000 claims description 12
- 231100000719 pollutant Toxicity 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 11
- 238000005516 engineering process Methods 0.000 claims description 9
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 230000001590 oxidative effect Effects 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 238000005979 thermal decomposition reaction Methods 0.000 claims description 7
- 230000008676 import Effects 0.000 claims 1
- 238000000151 deposition Methods 0.000 abstract description 2
- 230000008021 deposition Effects 0.000 abstract description 2
- 239000000356 contaminant Substances 0.000 abstract 2
- 238000004140 cleaning Methods 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- -1 silicon ions Chemical class 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 6
- 238000000137 annealing Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000006701 autoxidation reaction Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Recrystallisation Techniques (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention discloses a method for producing a semiconductor device which contains a polysilicon film. With the method, a natural filam and contaminant can be removed; besides, big grains can be formed by silicon ions injection and anneal. The invention also discloses another method, in which the natural filam and the contaminant are removed after cleaning treatment by CF <4> plasma and the natural filam is prevented from regrowing; then a silicon bulk is arranged into an amorphous silicon film deposition tube to be filled with inert gas.
Description
The present invention relates to a kind of method of making semiconductor device, particularly relate to the method that forms polysilicon film, this method can be removed natural oxide film and pollutant, and by injecting silicon ion and the big crystal grain of annealing formation.
In making the semiconductor device process, extensively adopt polysilicon film as electrically conductive film.With reference now to Figure 1A and Figure 1B,, the method for polysilicon film is made in expression according to prior art.
Figure 1A and Figure 1B cutaway view represent to make a kind of method of conventional polysilicon film.
Figure 1A represents, dielectric film (3) is formed on have the interface silicon substrate (1) of (2).Utilize contact hole mask to handle by photo etching, make dielectric film (3) form figure, the silicon substrate (1) of interface (2) is come out, thus, form contact hole (4), usually, natural oxide film (10) is grown on the silicon substrate (1) that exposes.
Figure 1B represents, in order to remove autoxidation film (10), utilizes BOE (buffer oxide corrosive agent) or HF chemicals to carry out wet clean process.Deposit polysilicon film (5) in 300 ℃ deposit pipe then is so that contact with interface (2).But the crystal grain (A) that is formed polysilicon film (5) by above-mentioned technology is the particulate of 0.1-0.5 μ m, so there is the shortcoming that reduces electron mobility and conductivity.And because remaining natural oxide film (10) increases contact resistance.
The purpose of this invention is to provide the method that a kind of manufacturing contains the semiconductor device of polysilicon film, this method can be removed natural oxide film and pollutant, and forms big crystal grain by injecting silicon ion and annealing.Another object of the present invention provides a kind of method, at CF
4After plasma cleans is handled, can remove natural oxide film and prevent the regrowth natural oxide film, then the amorphous silicon film deposit pipe that silicon substrate is packed into and will be flow through inert gas.
In order to achieve the above object, the present invention includes the following step:
On contain the silicon substrate in interface, form dielectric film;
Dielectric film is carved into figure,, thus, forms contact hole up to the silicon substrate that exposes the interface;
Then, carry out wet clean process and plasma treatment, so that remove natural oxidizing layer and pollutant above the silicon substrate that exposes;
Silicon substrate is packed in the amorphous silicon film deposit pipe that will lead to inert gas;
Form amorphous silicon film at predetermined temperature;
With predetermined close and energy, silicon ion is injected in the amorphous silicon film;
The described amorphous silicon film of heat treatment is so that form polysilicon film.
For further understanding feature of the present invention and purpose, carry out detailed narration below in conjunction with accompanying drawing, wherein:
Figure 1A and Figure 1B are the cutaway views of semiconductor device, are used to explain the method that forms polysilicon film according to prior art;
Fig. 2 A is the cutaway view of semiconductor device to Fig. 2 D, is used to represent to form according to the present invention the method for polysilicon film.
For above-mentioned several accompanying drawings, similar reference number is represented similar part.
Fig. 2 A is the cutaway view of semiconductor device to Fig. 2 D, is used to represent to form according to the present invention the method for polysilicon film.
Fig. 2 A represents, dielectric film is formed on has the interface above the silicon substrate (1) of (2).Utilize contact hole mask by photoetching, dielectric film (3) is carved into figure, the silicon substrate (1) of interface (2) is exposed, thus, form contact hole (4).Usually, natural oxide film (10) is grown on the silicon substrate (1) that exposes.
Fig. 2 B represents, utilizes BOE or HF chemicals to carry out wet clean process, so that remove natural oxide film (10), then utilizes CF
4Gas carries out plasma treatment, and the time is 20 to 40 seconds.Then, silicon substrate (1) is packed in the amorphous silicon film deposit pipe, as nitrogen (N
2) in the such inert gas input pipe of gas, so that reduce concentration of oxygen.After plasma treatment, utilize SH at 560 ℃ to 580 ℃
4The gas thermal decomposition, by LPCVD (low pressure chemical vapor deposition), the amorphous silicon film (6) of deposit 1000 to 3000 on the structure of gained.The CF that in above-mentioned technology, carries out
4Plasma treatment is not only removed natural oxide film residual after wet clean process, and removes and resemble oxygen (O
2) or hydrogen (H
2) pollutant of such nuclear as the polysilicon film grain growth.In the process of deposit pipe that silicon substrate is packed into, utilize nitrogen (N
2) but the air-blowing oxygen concentration of washing in the holding tube is very low, so that during the device silicon substrate, the growth of restriction natural oxide film.
Fig. 2 C represents, uses predetermined power about 10
15Cm
-2The silicon ion of magnitude is injected in the amorphous silicon film (6).
Fig. 2 D represents, with 500 ℃ to 700 ℃ heat treatment amorphous silicon films (6), thus, makes it to become polysilicon film (6A) in nitrogen.Therefore, pass through CF
4Plasma treatment is removed the pollutant as grain growth nuclear fully, has improved the growth of crystal grain (B).And, because being injected into amorphous silicon film, silicon ion causes interior can increasing, make the very big of crystal grain (B) change.When utilizing said method, the crystal grain that may make growth is greater than 1 micron.
As above detailed narration, can reach following purpose according to the present invention, before the deposition of amorphous silicon film, can reduce contact resistance by removing natural oxide film fully, by silicon (ion) inject and again crystallization make the crystallite dimension maximum, increased electron mobility and conductivity.
To aforementioned invention, though narrate with the preferred embodiment with certain particularity, it only illustrates principle of the present invention.Should understand, the present invention is not subjected to the restriction of the preferred embodiment of disclosed herein and explanation.Under situation about not departing from the scope of the present invention with spirit, various changes can be made, but these variations all are to belong to other embodiments of the invention.
Claims (47)
1. a method of making semiconductor device comprises the following steps:
On being arranged, the silicon substrate in interface forms dielectric film;
Said dielectric film is formed figure,, therefore, form contact hole up to the said silicon substrate that exposes said interface;
Then, carry out wet clean process and plasma treatment, remove said natural oxidizing layer and the pollutant that exposes on the silicon substrate;
Said silicon substrate is packed in the amorphous silicon film deposit pipe that will import inert gas;
Form amorphous silicon film;
Silicon ion is injected said amorphous silicon film; And
The described amorphous silicon film of heat treatment forms polysilicon film.
2. according to the method for claim 1, any that it is characterized in that utilizing BOE and HF chemicals carries out wet clean process.
3. according to the method for claim 1, it is characterized in that utilizing CF
4Gas carries out plasma treatment, and the time is 20 to 40 seconds.
4. according to the method for claim 1, it is characterized in that said silicon substrate is packed in the said amorphous silicon film deposit pipe, in the inert gas input pipe, therefore, the restriction oxygen concentration.
5. according to the method for claim 1, it is characterized in that,, utilize SH at 560 to 580 ℃ by LPCVD technology
4The gas thermal decomposition, the said amorphous silicon film of deposit.
6. according to the method for claim 1, it is characterized in that the said amorphous silicon film of deposit, thickness are 1000 to 3000 .
7. according to the method for claim 1, it is characterized in that, with about 10
15Cm
-2The dosage of magnitude injects said silicon ion.
8. according to the method for claim 1, it is characterized in that, in nitrogen,, make it to change into polysilicon thus with 500 to 700 ℃ of said amorphous silicon films of heat treatment.
9. a method of making semiconductor device comprises the following steps:
Have on the silicon substrate in interface, forming dielectric film;
Make said dielectric film form figure,, thus, form contact hole up to the said silicon substrate that exposes said interface;
Then, carry out wet clean process and plasma treatment, remove natural oxidizing layer and pollutant above the said silicon substrate that exposes;
Form amorphous silicon film;
The said amorphous silicon film of heat treatment forms polysilicon film.
10. according to the method for claim 9, it is characterized in that any that utilizes BOE and HF chemicals carries out wet processed.
11. the method according to claim 9 is characterized in that, utilizes CF
4Gas carries out plasma treatment, and the time is 20 to 40 seconds.
12. the method according to claim 9 is characterized in that, by LPCVD technology, by decomposing SH at 560 ℃ to 580 ℃
4The said amorphous silicon film of gas deposit.
13. the method according to claim 9 is characterized in that, the said amorphous silicon film of deposit, thickness are 1000 to 3000 .
14. the method according to claim 9 is characterized in that, with 500 ℃ to the 700 ℃ said amorphous silicon films of heat treatment, thus, makes it to be transformed into polysilicon film in nitrogen.
15. a method of making semiconductor device comprises the following steps:
Have on the silicon substrate in interface, forming dielectric film;
Make said dielectric film form figure,, thus, form contact hole up to the said silicon substrate that exposes said interface;
Then, carry out wet clean process and plasma treatment, remove natural oxidizing layer and pollutant above the said silicon substrate that exposes;
Said silicon substrate is packed in the amorphous silicon film deposit pipe that will lead to inert gas;
Form amorphous silicon film;
The said amorphous silicon film of heat treatment is to form polysilicon film.
16. the method according to claim 15 is characterized in that, utilizes any of chemicals of BOE and HF to carry out wet clean process.
17. the method according to claim 15 is characterized in that, utilizes CF
4Gas carries out plasma treatment, and the time is 20 to 40 seconds.
18. the method according to claim 15 is characterized in that, said silicon substrate is packed into to feed in the said amorphous silicon film deposit pipe of inert gas, therefore, and the restriction oxygen concentration.
19. the method according to claim 15 is characterized in that, by LPCVD technology, is 560 ℃ of SiH to 580 ℃ of following thermal decompositions by temperature
4Gas, the said amorphous silicon film of deposit.
20. the method according to claim 15 is characterized in that, the said amorphous silicon film of deposit, thickness are 1000 to 3000 .
21. the method according to claim 15 is characterized in that, with 500 ℃ to the 700 ℃ said amorphous silicon films of heat treatment, thus, makes it to change into polysilicon in nitrogen.
22. a method of making semiconductor device comprises the following steps:
Form dielectric film having on the silicon substrate in interface;
Make said dielectric film form figure,, thus, form contact hole up to the said silicon substrate that exposes said interface;
Then, carry out wet clean process and plasma treatment, so that remove natural oxidizing layer and pollutant on the said silicon substrate that exposes;
Form amorphous silicon film;
Silicon ion is injected into said amorphous silicon film;
The said amorphous silicon film of heat treatment is so that form polysilicon film.
23. the method according to claim 22 is characterized in that, any carries out wet clean process to utilize BOE and HF.
24. the method according to claim 22 is characterized in that, utilizes CF
4Gas carries out plasma treatment, and the time is 20 to 40 seconds.
25. the method according to claim 22 is characterized in that, by at 560 ℃ to 580 ℃ thermal decomposition SiH
4LPCVD technology, the said amorphous silicon film of deposit.
26. the method according to claim 22 is characterized in that, the said amorphous silicon film of deposit, thickness are 1000 to 3000 .
27. the method according to claim 22 is characterized in that, with about 10
15Cm
-2The dosage of the order of magnitude injects said silicon ion.
28. the method according to claim 22 is characterized in that, with 500 to 700 ℃ of said amorphous silicon films of heat treatment, thus, makes it to change into polysilicon film in nitrogen.
29. a method of making semiconductor device comprises the following steps:
Form dielectric film having on the silicon substrate in interface;
Make said dielectric film form figure,, thus, form contact hole up to the said silicon substrate that exposes said interface;
Then, carry out wet clean process, so that remove natural oxidizing layer and pollutant above the said silicon substrate that exposes;
Said silicon substrate is packed in the amorphous silicon film deposit pipe that will lead to inert gas;
Form amorphous silicon film;
Silicon ion is injected in the said amorphous silicon film;
The said amorphous silicon film of heat treatment is so that form polysilicon film.
30. the method according to claim 29 is characterized in that, utilizes any of BOE and HF chemicals, carries out wet clean process.
31. the method according to claim 29 is characterized in that, said silicon substrate packed into leads in the said amorphous silicon film deposit pipe of inert gas, thus, the restriction oxygen concentration.
32. the method according to claim 29 is characterized in that, by LPCVD technology, utilizes at 560 ℃ to 580 ℃ following thermal decomposition SiH
4The said amorphous silicon film of deposit.
33. the method according to claim 29 is characterized in that, the said amorphous silicon film of deposit, thickness are 1000 to 3000 .
34. the method according to claim 29 is characterized in that, with 10
15Cm
-2The dosage of the order of magnitude injects said silicon ion.
35. the method according to claim 29 is characterized in that, in nitrogen, with 500 to 700 ℃ of said amorphous silicon films of heat treatment, thus, makes it to change into polysilicon film.
36. a method of making semiconductor device comprises the following steps:
Form dielectric film having on the silicon substrate in interface;
Make said dielectric film form figure,, thus, form contact hole up to the said silicon substrate that exposes said interface;
Carry out wet clean process, so that remove natural oxidizing layer and pollutant above the said silicon substrate that exposes;
Said silicon substrate is packed in the amorphous silicon film deposit pipe that will lead to inert gas;
Form amorphous silicon film;
The said amorphous silicon film of heat treatment is so that form polysilicon film.
37. the method according to claim 36 is characterized in that, utilizes any of BOE and HF chemicals, carries out wet clean process.
38. the method according to claim 36 is characterized in that, said silicon substrate is packed into lead in the said amorphous silicon film deposit pipe of inert gas, therefore limits concentration of oxygen.
39. the method according to claim 36 is characterized in that, by LPCVD technology at 560 ℃ to 580 ℃ thermal decomposition SiH
4, the said amorphous silicon film of deposit.
40. the method according to claim 36 is characterized in that, the said amorphous silicon film of deposit, thickness are 1000 to 3000 .
41., in nitrogen,, make it to change into polysilicon film with 500 to 700 ℃ of said amorphous silicon films of heat treatment according to the method for claim 36.
42. a method of making semiconductor device comprises the following steps:
Form dielectric film having on the silicon substrate in interface;
Make said dielectric film form figure, the said silicon substrate up to said interface is exposed, and thus, forms contact hole;
Carry out wet clean process, remove natural oxide film and pollutant on the said silicon substrate that exposes;
Form amorphous silicon film;
Silicon ion is injected in the amorphous silicon film;
The said amorphous silicon film of heat treatment is so that form polysilicon film.
43. according to the method for claim 42, utilize any of BOE and HF chemicals, carry out wet clean process.
44. the method according to claim 42 is characterized in that, by LPCVD technology, utilizes at 560 ℃ to 580 ℃ thermal decomposition SiH
4Gas, the said amorphous silicon film of deposit.
45. the method according to claim 42 is characterized in that, the said amorphous silicon film of deposit, thickness are 1000 to 3000 .
46. the method according to claim 42 is characterized in that, with about 10
15Cm
-2The dosage of the order of magnitude injects said silicon ion.
47. the method according to claim 42 is characterized in that, at 500 ℃ to the 700 ℃ said amorphous silicon films of heat treatment, thus, makes it to change into polysilicon in nitrogen.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10983/95 | 1995-05-04 | ||
| KR1019950010983A KR100208439B1 (en) | 1995-05-04 | 1995-05-04 | Method of forming polysilicon layer in semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1144397A true CN1144397A (en) | 1997-03-05 |
| CN1083158C CN1083158C (en) | 2002-04-17 |
Family
ID=19413757
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN96107491A Expired - Fee Related CN1083158C (en) | 1995-05-04 | 1996-05-04 | Method of manufacturing semiconductor device |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPH08306642A (en) |
| KR (1) | KR100208439B1 (en) |
| CN (1) | CN1083158C (en) |
| DE (1) | DE19617833A1 (en) |
| GB (1) | GB2300517B (en) |
| TW (1) | TW291572B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6107192A (en) * | 1997-12-30 | 2000-08-22 | Applied Materials, Inc. | Reactive preclean prior to metallization for sub-quarter micron application |
| JP2010123866A (en) | 2008-11-21 | 2010-06-03 | Sharp Corp | Semiconductor device and method of manufacturing the same |
| KR102178535B1 (en) | 2014-02-19 | 2020-11-13 | 삼성전자주식회사 | Methods of manufacturing semiconductor devices |
| CN106571289B (en) * | 2015-10-13 | 2020-01-03 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device, preparation method thereof and electronic device |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1239706A (en) * | 1984-11-26 | 1988-07-26 | Hisao Hayashi | Method of forming a thin semiconductor film |
| JPH0322527A (en) * | 1989-06-20 | 1991-01-30 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPH0350823A (en) * | 1989-07-19 | 1991-03-05 | Nec Corp | Manufacture of semiconductor device |
| JP3125302B2 (en) * | 1990-11-21 | 2001-01-15 | セイコーエプソン株式会社 | Method for manufacturing semiconductor device |
| JPH05275365A (en) * | 1992-03-30 | 1993-10-22 | Oki Electric Ind Co Ltd | Manufacture of semiconductor element |
| US5266514A (en) * | 1992-12-21 | 1993-11-30 | Industrial Technology Research Institute | Method for producing a roughened surface capacitor |
| JPH0729852A (en) * | 1993-07-07 | 1995-01-31 | Kawasaki Steel Corp | Fabrication of semiconductor device |
| JP2697645B2 (en) * | 1994-10-31 | 1998-01-14 | 日本電気株式会社 | Method for manufacturing semiconductor device |
-
1995
- 1995-05-04 KR KR1019950010983A patent/KR100208439B1/en not_active IP Right Cessation
-
1996
- 1996-04-26 JP JP8106869A patent/JPH08306642A/en active Pending
- 1996-04-30 GB GB9608822A patent/GB2300517B/en not_active Expired - Fee Related
- 1996-05-03 DE DE19617833A patent/DE19617833A1/en not_active Ceased
- 1996-05-04 CN CN96107491A patent/CN1083158C/en not_active Expired - Fee Related
- 1996-05-04 TW TW085105355A patent/TW291572B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| DE19617833A1 (en) | 1996-11-07 |
| KR100208439B1 (en) | 1999-07-15 |
| JPH08306642A (en) | 1996-11-22 |
| GB2300517B (en) | 1999-07-28 |
| GB9608822D0 (en) | 1996-07-03 |
| GB2300517A (en) | 1996-11-06 |
| CN1083158C (en) | 2002-04-17 |
| TW291572B (en) | 1996-11-21 |
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