GB9319730D0 - Manufacturing method of a semiconductor device - Google Patents
Manufacturing method of a semiconductor deviceInfo
- Publication number
- GB9319730D0 GB9319730D0 GB939319730A GB9319730A GB9319730D0 GB 9319730 D0 GB9319730 D0 GB 9319730D0 GB 939319730 A GB939319730 A GB 939319730A GB 9319730 A GB9319730 A GB 9319730A GB 9319730 D0 GB9319730 D0 GB 9319730D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- manufacturing
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR920017608 | 1992-09-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
GB9319730D0 true GB9319730D0 (en) | 1993-11-10 |
GB2271467A GB2271467A (en) | 1994-04-13 |
Family
ID=19340175
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9319730A Withdrawn GB2271467A (en) | 1992-09-26 | 1993-09-24 | Manufacturing method of a semiconductor device |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPH06209049A (en) |
CN (1) | CN1087446A (en) |
DE (1) | DE4332605A1 (en) |
GB (1) | GB2271467A (en) |
IT (1) | IT1272674B (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004172259A (en) | 2002-11-19 | 2004-06-17 | Oki Electric Ind Co Ltd | Method for manufacturing semiconductor element |
KR100650858B1 (en) | 2005-12-23 | 2006-11-28 | 주식회사 하이닉스반도체 | Method of manufacturing a flash memory device |
JP5029257B2 (en) * | 2007-01-17 | 2012-09-19 | 東京エレクトロン株式会社 | Mounting table structure and processing device |
CN104810263B (en) * | 2014-01-24 | 2018-11-20 | 北大方正集团有限公司 | The manufacturing method of gate oxide |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4139658A (en) * | 1976-06-23 | 1979-02-13 | Rca Corp. | Process for manufacturing a radiation hardened oxide |
DE3206376A1 (en) * | 1982-02-22 | 1983-09-01 | Siemens AG, 1000 Berlin und 8000 München | METHOD FOR PRODUCING SILICON OXIDE LAYERS |
-
1993
- 1993-09-24 JP JP5237814A patent/JPH06209049A/en active Pending
- 1993-09-24 IT ITMI932044A patent/IT1272674B/en active IP Right Grant
- 1993-09-24 DE DE4332605A patent/DE4332605A1/en not_active Withdrawn
- 1993-09-24 GB GB9319730A patent/GB2271467A/en not_active Withdrawn
- 1993-09-25 CN CN93118158.5A patent/CN1087446A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
JPH06209049A (en) | 1994-07-26 |
DE4332605A1 (en) | 1994-03-31 |
ITMI932044A1 (en) | 1995-03-24 |
GB2271467A (en) | 1994-04-13 |
CN1087446A (en) | 1994-06-01 |
ITMI932044A0 (en) | 1993-09-24 |
IT1272674B (en) | 1997-06-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |