TW279249B - - Google Patents
Info
- Publication number
- TW279249B TW279249B TW084112514A TW84112514A TW279249B TW 279249 B TW279249 B TW 279249B TW 084112514 A TW084112514 A TW 084112514A TW 84112514 A TW84112514 A TW 84112514A TW 279249 B TW279249 B TW 279249B
- Authority
- TW
- Taiwan
Links
Classifications
-
- H10P72/0421—
-
- H10P50/266—
-
- H10P72/33—
-
- H10P74/238—
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6315473A JPH08153711A (ja) | 1994-11-26 | 1994-11-26 | エッチング装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW279249B true TW279249B (OSRAM) | 1996-06-21 |
Family
ID=18065785
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW084112514A TW279249B (OSRAM) | 1994-11-26 | 1995-11-23 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPH08153711A (OSRAM) |
| KR (1) | KR100313386B1 (OSRAM) |
| CN (4) | CN1128893C (OSRAM) |
| TW (1) | TW279249B (OSRAM) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3336975B2 (ja) * | 1998-03-27 | 2002-10-21 | 日本電気株式会社 | 基板処理方法 |
| DE10229037A1 (de) | 2002-06-28 | 2004-01-29 | Robert Bosch Gmbh | Vorrichtung und Verfahren zur Erzeugung von Chlortrifluorid und Anlage zur Ätzung von Halbleitersubstraten mit dieser Vorrichtung |
| JP4134671B2 (ja) * | 2002-10-17 | 2008-08-20 | 松下電器産業株式会社 | プラズマ処理方法 |
| KR101225312B1 (ko) * | 2005-12-16 | 2013-01-22 | 엘지디스플레이 주식회사 | 프로세스 장치 |
| US8207026B2 (en) * | 2009-01-28 | 2012-06-26 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of thin film transistor and manufacturing method of display device |
| CN102074157B (zh) * | 2011-01-07 | 2012-01-11 | 华南理工大学 | 一种敷铜板腐蚀设备 |
| JP5924901B2 (ja) * | 2011-10-17 | 2016-05-25 | Hoya株式会社 | 転写用マスクの製造方法 |
| KR102030797B1 (ko) | 2012-03-30 | 2019-11-11 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 제조 방법 |
| JP6280655B2 (ja) * | 2014-10-10 | 2018-02-14 | 関東電化工業株式会社 | ケイ素化合物用エッチングガス組成物及びエッチング方法 |
| JP7072440B2 (ja) | 2018-05-16 | 2022-05-20 | 東京エレクトロン株式会社 | シリコン含有膜のエッチング方法、コンピュータ記憶媒体、及びシリコン含有膜のエッチング装置 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4498953A (en) * | 1983-07-27 | 1985-02-12 | At&T Bell Laboratories | Etching techniques |
| JPH0410621A (ja) * | 1990-04-27 | 1992-01-14 | Kawasaki Steel Corp | 窒化シリコン膜のエッチング処理方法、及びその装置 |
| JPH06103682B2 (ja) * | 1990-08-09 | 1994-12-14 | 富士通株式会社 | 光励起ドライクリーニング方法および装置 |
| JPH04196529A (ja) * | 1990-11-28 | 1992-07-16 | Toshiba Corp | プラズマ処理装置 |
| JPH04206822A (ja) * | 1990-11-30 | 1992-07-28 | Mitsubishi Electric Corp | 半導体製造装置 |
| JP3176118B2 (ja) * | 1992-03-27 | 2001-06-11 | 株式会社東芝 | 多室型基板処理装置 |
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1994
- 1994-11-26 JP JP6315473A patent/JPH08153711A/ja not_active Withdrawn
-
1995
- 1995-11-23 TW TW084112514A patent/TW279249B/zh not_active IP Right Cessation
- 1995-11-25 KR KR1019950044538A patent/KR100313386B1/ko not_active Expired - Fee Related
- 1995-11-25 CN CN95121846A patent/CN1128893C/zh not_active Expired - Fee Related
- 1995-11-25 CN CNB2006100054399A patent/CN100481466C/zh not_active Expired - Fee Related
-
1999
- 1999-08-05 CN CN99117536A patent/CN1248787A/zh active Pending
- 1999-08-05 CN CNB991107772A patent/CN1251331C/zh not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| KR960019566A (ko) | 1996-06-17 |
| JPH08153711A (ja) | 1996-06-11 |
| CN1248787A (zh) | 2000-03-29 |
| KR100313386B1 (ko) | 2003-06-12 |
| CN1128893C (zh) | 2003-11-26 |
| CN1136599A (zh) | 1996-11-27 |
| CN1251331C (zh) | 2006-04-12 |
| CN100481466C (zh) | 2009-04-22 |
| CN1825600A (zh) | 2006-08-30 |
| CN1245976A (zh) | 2000-03-01 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |