TW274153B - Fabricating method for SRAM with double-trench capacitor - Google Patents

Fabricating method for SRAM with double-trench capacitor

Info

Publication number
TW274153B
TW274153B TW84108982A TW84108982A TW274153B TW 274153 B TW274153 B TW 274153B TW 84108982 A TW84108982 A TW 84108982A TW 84108982 A TW84108982 A TW 84108982A TW 274153 B TW274153 B TW 274153B
Authority
TW
Taiwan
Prior art keywords
polysilicon
isolation
lithography
forming
capacitor
Prior art date
Application number
TW84108982A
Other languages
English (en)
Inventor
Horng-Huei Tzeng
Original Assignee
Vanguard Int Semiconduct Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vanguard Int Semiconduct Corp filed Critical Vanguard Int Semiconduct Corp
Priority to TW84108982A priority Critical patent/TW274153B/zh
Application granted granted Critical
Publication of TW274153B publication Critical patent/TW274153B/zh

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Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
TW84108982A 1995-08-29 1995-08-29 Fabricating method for SRAM with double-trench capacitor TW274153B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW84108982A TW274153B (en) 1995-08-29 1995-08-29 Fabricating method for SRAM with double-trench capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW84108982A TW274153B (en) 1995-08-29 1995-08-29 Fabricating method for SRAM with double-trench capacitor

Publications (1)

Publication Number Publication Date
TW274153B true TW274153B (en) 1996-04-11

Family

ID=51397213

Family Applications (1)

Application Number Title Priority Date Filing Date
TW84108982A TW274153B (en) 1995-08-29 1995-08-29 Fabricating method for SRAM with double-trench capacitor

Country Status (1)

Country Link
TW (1) TW274153B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6583060B2 (en) * 2001-07-13 2003-06-24 Micron Technology, Inc. Dual depth trench isolation

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6583060B2 (en) * 2001-07-13 2003-06-24 Micron Technology, Inc. Dual depth trench isolation
US6790781B2 (en) 2001-07-13 2004-09-14 Micron Technology, Inc. Dual depth trench isolation
US6875697B2 (en) 2001-07-13 2005-04-05 Micron Technology, Inc. Dual depth trench isolation

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