TW274153B - Fabricating method for SRAM with double-trench capacitor - Google Patents
Fabricating method for SRAM with double-trench capacitorInfo
- Publication number
- TW274153B TW274153B TW84108982A TW84108982A TW274153B TW 274153 B TW274153 B TW 274153B TW 84108982 A TW84108982 A TW 84108982A TW 84108982 A TW84108982 A TW 84108982A TW 274153 B TW274153 B TW 274153B
- Authority
- TW
- Taiwan
- Prior art keywords
- polysilicon
- isolation
- lithography
- forming
- capacitor
- Prior art date
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW84108982A TW274153B (en) | 1995-08-29 | 1995-08-29 | Fabricating method for SRAM with double-trench capacitor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW84108982A TW274153B (en) | 1995-08-29 | 1995-08-29 | Fabricating method for SRAM with double-trench capacitor |
Publications (1)
Publication Number | Publication Date |
---|---|
TW274153B true TW274153B (en) | 1996-04-11 |
Family
ID=51397213
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW84108982A TW274153B (en) | 1995-08-29 | 1995-08-29 | Fabricating method for SRAM with double-trench capacitor |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW274153B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6583060B2 (en) * | 2001-07-13 | 2003-06-24 | Micron Technology, Inc. | Dual depth trench isolation |
-
1995
- 1995-08-29 TW TW84108982A patent/TW274153B/zh not_active IP Right Cessation
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6583060B2 (en) * | 2001-07-13 | 2003-06-24 | Micron Technology, Inc. | Dual depth trench isolation |
US6790781B2 (en) | 2001-07-13 | 2004-09-14 | Micron Technology, Inc. | Dual depth trench isolation |
US6875697B2 (en) | 2001-07-13 | 2005-04-05 | Micron Technology, Inc. | Dual depth trench isolation |
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Legal Events
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MK4A | Expiration of patent term of an invention patent |