TW270996B - - Google Patents

Info

Publication number
TW270996B
TW270996B TW084104987A TW84104987A TW270996B TW 270996 B TW270996 B TW 270996B TW 084104987 A TW084104987 A TW 084104987A TW 84104987 A TW84104987 A TW 84104987A TW 270996 B TW270996 B TW 270996B
Authority
TW
Taiwan
Application number
TW084104987A
Original Assignee
Toshiba Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Co Ltd filed Critical Toshiba Co Ltd
Application granted granted Critical
Publication of TW270996B publication Critical patent/TW270996B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/14—Implementation of control logic, e.g. test mode decoders
TW084104987A 1994-04-27 1995-05-19 TW270996B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8949594A JP3015661B2 (ja) 1994-04-27 1994-04-27 不揮発性半導体メモリ

Publications (1)

Publication Number Publication Date
TW270996B true TW270996B (zh) 1996-02-21

Family

ID=13972348

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084104987A TW270996B (zh) 1994-04-27 1995-05-19

Country Status (7)

Country Link
US (1) US5579270A (zh)
EP (1) EP0680050B1 (zh)
JP (1) JP3015661B2 (zh)
KR (1) KR0159447B1 (zh)
CN (1) CN1038075C (zh)
DE (1) DE69513434T2 (zh)
TW (1) TW270996B (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5745430A (en) * 1996-12-30 1998-04-28 Siemens Aktiengesellschaft Circuit and method to externally adjust internal circuit timing
EP0994417A3 (de) * 1998-09-09 2004-06-02 Siemens Aktiengesellschaft Schaltungsanordnung und Verfahren zur Überprüfung von Daten
TW439029B (en) * 1998-11-27 2001-06-07 Acer Peripherals Inc Method for preventing flash memory data from being lost or miswritten
TW473728B (en) * 1999-07-22 2002-01-21 Koninkl Philips Electronics Nv A method for testing a memory array and a memory-based device so testable with a fault response signalizing mode for when finding predetermined correspondence between fault patterns signalizing one such fault pattern only in the form of a compressed resp
US7007131B2 (en) * 2000-12-27 2006-02-28 Intel Corporation Method and apparatus including special programming mode circuitry which disables internal program verification operations by a memory
JP2003016800A (ja) * 2001-07-03 2003-01-17 Mitsubishi Electric Corp 半導体装置
JP4260434B2 (ja) * 2002-07-16 2009-04-30 富士通マイクロエレクトロニクス株式会社 不揮発性半導体メモリ及びその動作方法
JP4429593B2 (ja) * 2002-11-22 2010-03-10 パナソニック株式会社 半導体装置のレイアウト検証方法
JP4424952B2 (ja) * 2003-09-16 2010-03-03 株式会社ルネサステクノロジ 不揮発性半導体記憶装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5053990A (en) * 1988-02-17 1991-10-01 Intel Corporation Program/erase selection for flash memory
US5280446A (en) * 1990-09-20 1994-01-18 Bright Microelectronics, Inc. Flash eprom memory circuit having source side programming
US5233562A (en) * 1991-12-30 1993-08-03 Intel Corporation Methods of repairing field-effect memory cells in an electrically erasable and electrically programmable memory device
JP2716906B2 (ja) * 1992-03-27 1998-02-18 株式会社東芝 不揮発性半導体記憶装置

Also Published As

Publication number Publication date
EP0680050A1 (en) 1995-11-02
JPH07296599A (ja) 1995-11-10
DE69513434T2 (de) 2000-05-04
US5579270A (en) 1996-11-26
KR0159447B1 (ko) 1999-02-01
KR950034838A (ko) 1995-12-28
DE69513434D1 (de) 1999-12-30
CN1120740A (zh) 1996-04-17
EP0680050B1 (en) 1999-11-24
CN1038075C (zh) 1998-04-15
JP3015661B2 (ja) 2000-03-06

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees