TW258822B - - Google Patents
Info
- Publication number
- TW258822B TW258822B TW084100076A TW84100076A TW258822B TW 258822 B TW258822 B TW 258822B TW 084100076 A TW084100076 A TW 084100076A TW 84100076 A TW84100076 A TW 84100076A TW 258822 B TW258822 B TW 258822B
- Authority
- TW
- Taiwan
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/205,423 US6027997A (en) | 1994-03-04 | 1994-03-04 | Method for chemical mechanical polishing a semiconductor device using slurry |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW258822B true TW258822B (US20110009641A1-20110113-C00116.png) | 1995-10-01 |
Family
ID=22762127
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW084100076A TW258822B (US20110009641A1-20110113-C00116.png) | 1994-03-04 | 1995-01-06 |
Country Status (5)
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11138426A (ja) * | 1997-11-11 | 1999-05-25 | Tokyo Electron Ltd | 研磨装置 |
| JPH11233621A (ja) | 1998-02-16 | 1999-08-27 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
| US6727170B2 (en) | 1998-02-16 | 2004-04-27 | Renesas Technology Corp. | Semiconductor device having an improved interlayer conductor connections and a manufacturing method thereof |
| US6180422B1 (en) * | 1998-05-06 | 2001-01-30 | International Business Machines Corporation | Endpoint detection by chemical reaction |
| US6284560B1 (en) | 1998-12-18 | 2001-09-04 | Eastman Kodak Company | Method for producing co-planar surface structures |
| US6225224B1 (en) * | 1999-05-19 | 2001-05-01 | Infineon Technologies Norht America Corp. | System for dispensing polishing liquid during chemical mechanical polishing of a semiconductor wafer |
| US6777738B2 (en) | 1999-06-09 | 2004-08-17 | Renesas Technology Corp. | Semiconductor integrated circuit |
| US6534327B2 (en) | 2000-04-13 | 2003-03-18 | Texas Instruments Incorporated | Method for reworking metal layers on integrated circuit bond pads |
| JP2001358214A (ja) | 2000-06-15 | 2001-12-26 | Mitsubishi Electric Corp | 半導体装置および半導体装置の製造方法 |
| US6541384B1 (en) | 2000-09-08 | 2003-04-01 | Applied Materials, Inc. | Method of initiating cooper CMP process |
| US6593182B2 (en) * | 2001-03-19 | 2003-07-15 | Macronix International Co., Ltd. | Method for forming multiple gate oxide layer with the plasma oxygen doping |
| US6515488B1 (en) | 2001-05-07 | 2003-02-04 | Stmicroelectronics, Inc. | Fingerprint detector with scratch resistant surface and embedded ESD protection grid |
| DE10133873B4 (de) * | 2001-07-12 | 2005-04-28 | Infineon Technologies Ag | Verfahren zur Herstellung von Kontakten für integrierte Schaltungen |
| US20040092102A1 (en) * | 2002-11-12 | 2004-05-13 | Sachem, Inc. | Chemical mechanical polishing composition and method |
| US7186653B2 (en) | 2003-07-30 | 2007-03-06 | Climax Engineered Materials, Llc | Polishing slurries and methods for chemical mechanical polishing |
| US20050022456A1 (en) * | 2003-07-30 | 2005-02-03 | Babu S. V. | Polishing slurry and method for chemical-mechanical polishing of copper |
| JP2005340328A (ja) * | 2004-05-25 | 2005-12-08 | Fujitsu Ltd | 半導体装置の製造方法 |
| CN100442108C (zh) * | 2004-09-15 | 2008-12-10 | 中芯国际集成电路制造(上海)有限公司 | 用于硅上液晶器件的铝化学机械抛光回蚀 |
| US8124525B1 (en) | 2010-10-27 | 2012-02-28 | International Business Machines Corporation | Method of forming self-aligned local interconnect and structure formed thereby |
| US9583442B2 (en) | 2015-06-29 | 2017-02-28 | International Business Machines Corporation | Interconnect structure including middle of line (MOL) metal layer local interconnect on etch stop layer |
| US20210299816A1 (en) * | 2020-03-25 | 2021-09-30 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Cmp polishing pad with protruding structures having engineered open void space |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3385682A (en) * | 1965-04-29 | 1968-05-28 | Sprague Electric Co | Method and reagent for surface polishing |
| US4475981A (en) * | 1983-10-28 | 1984-10-09 | Ampex Corporation | Metal polishing composition and process |
| US4491500A (en) * | 1984-02-17 | 1985-01-01 | Rem Chemicals, Inc. | Method for refinement of metal surfaces |
| US4944836A (en) * | 1985-10-28 | 1990-07-31 | International Business Machines Corporation | Chem-mech polishing method for producing coplanar metal/insulator films on a substrate |
| US4956313A (en) * | 1987-08-17 | 1990-09-11 | International Business Machines Corporation | Via-filling and planarization technique |
| US4959113C1 (en) * | 1989-07-31 | 2001-03-13 | Rodel Inc | Method and composition for polishing metal surfaces |
| DE3939661A1 (de) * | 1989-11-30 | 1991-06-13 | Wacker Chemitronic | Verfahren zur steuerung des einbaues von kupfer in siliciumscheiben beim chemomechanischen polieren |
| US4992135A (en) * | 1990-07-24 | 1991-02-12 | Micron Technology, Inc. | Method of etching back of tungsten layers on semiconductor wafers, and solution therefore |
| US5244534A (en) * | 1992-01-24 | 1993-09-14 | Micron Technology, Inc. | Two-step chemical mechanical polishing process for producing flush and protruding tungsten plugs |
| US5222329A (en) * | 1992-03-26 | 1993-06-29 | Micron Technology, Inc. | Acoustical method and system for detecting and controlling chemical-mechanical polishing (CMP) depths into layers of conductors, semiconductors, and dielectric materials |
| US5340370A (en) * | 1993-11-03 | 1994-08-23 | Intel Corporation | Slurries for chemical mechanical polishing |
-
1994
- 1994-03-04 US US08/205,423 patent/US6027997A/en not_active Expired - Lifetime
-
1995
- 1995-01-06 TW TW084100076A patent/TW258822B/zh not_active IP Right Cessation
- 1995-02-23 KR KR1019950003510A patent/KR950034564A/ko not_active Application Discontinuation
- 1995-03-02 JP JP6864395A patent/JPH07288244A/ja active Pending
- 1995-03-02 EP EP95102959A patent/EP0670591A3/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| KR950034564A (ko) | 1995-12-28 |
| US6027997A (en) | 2000-02-22 |
| EP0670591A2 (en) | 1995-09-06 |
| EP0670591A3 (en) | 1995-12-27 |
| JPH07288244A (ja) | 1995-10-31 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |