CN100442108C - 用于硅上液晶器件的铝化学机械抛光回蚀 - Google Patents
用于硅上液晶器件的铝化学机械抛光回蚀 Download PDFInfo
- Publication number
- CN100442108C CN100442108C CNB2004100665158A CN200410066515A CN100442108C CN 100442108 C CN100442108 C CN 100442108C CN B2004100665158 A CNB2004100665158 A CN B2004100665158A CN 200410066515 A CN200410066515 A CN 200410066515A CN 100442108 C CN100442108 C CN 100442108C
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- China
- Prior art keywords
- aluminum
- borderline region
- patterning
- sunk area
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133553—Reflecting elements
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136277—Active matrix addressed cells formed on a semiconductor substrate, e.g. of silicon
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (18)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2004100665158A CN100442108C (zh) | 2004-09-15 | 2004-09-15 | 用于硅上液晶器件的铝化学机械抛光回蚀 |
US11/388,359 US7557031B2 (en) | 2004-09-15 | 2006-03-23 | Etch back with aluminum CMP for LCOS devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2004100665158A CN100442108C (zh) | 2004-09-15 | 2004-09-15 | 用于硅上液晶器件的铝化学机械抛光回蚀 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1749814A CN1749814A (zh) | 2006-03-22 |
CN100442108C true CN100442108C (zh) | 2008-12-10 |
Family
ID=36605349
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100665158A Expired - Fee Related CN100442108C (zh) | 2004-09-15 | 2004-09-15 | 用于硅上液晶器件的铝化学机械抛光回蚀 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7557031B2 (zh) |
CN (1) | CN100442108C (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100460942C (zh) * | 2004-06-02 | 2009-02-11 | 中芯国际集成电路制造(上海)有限公司 | 硅上液晶器件及其制造方法 |
US7474371B2 (en) | 2006-06-08 | 2009-01-06 | United Microelectronics Corp. | Method of improving the flatness of a microdisplay surface, liquid crystal on silicon (LCoS) display panel and method of manufacturing the same |
CN100483235C (zh) * | 2006-12-04 | 2009-04-29 | 中芯国际集成电路制造(上海)有限公司 | 硅基液晶显示器单元及其形成方法 |
CN100483238C (zh) * | 2006-12-08 | 2009-04-29 | 中芯国际集成电路制造(上海)有限公司 | 硅基液晶显示装置反射镜面的制作方法 |
CN101330051B (zh) * | 2007-06-21 | 2010-08-11 | 中芯国际集成电路制造(上海)有限公司 | 利用银获得lcos器件的方法和所产生的结构 |
CN102043294A (zh) * | 2009-10-15 | 2011-05-04 | 中芯国际集成电路制造(上海)有限公司 | 一种硅上液晶及其铝反射镜的制造方法 |
CN102463522B (zh) * | 2010-11-18 | 2014-09-24 | 中芯国际集成电路制造(上海)有限公司 | 铝的化学机械抛光方法 |
CN103915333A (zh) * | 2014-04-21 | 2014-07-09 | 上海联星电子有限公司 | 一种像素表面平整度实现方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05275366A (ja) * | 1992-01-24 | 1993-10-22 | Micron Technol Inc | 埋込み形および突起状タングステンプラグを形成するための化学的・機械的ポリッシング方法 |
US5270263A (en) * | 1991-12-20 | 1993-12-14 | Micron Technology, Inc. | Process for depositing aluminum nitride (AlN) using nitrogen plasma sputtering |
EP0670591A2 (en) * | 1994-03-04 | 1995-09-06 | Motorola, Inc. | Method for chemical mechanical polishing a semiconductor device using slurry |
CN1312483A (zh) * | 2001-03-15 | 2001-09-12 | 东南大学 | 彩色液晶像素驱动晶体管的制造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5461501A (en) | 1992-10-08 | 1995-10-24 | Hitachi, Ltd. | Liquid crystal substrate having 3 metal layers with slits offset to block light from reaching the substrate |
JPH11162829A (ja) | 1997-11-21 | 1999-06-18 | Nec Corp | 半導体装置の製造方法 |
US6576550B1 (en) | 2000-06-30 | 2003-06-10 | Infineon, Ag | ‘Via first’ dual damascene process for copper metallization |
US6472306B1 (en) | 2000-09-05 | 2002-10-29 | Industrial Technology Research Institute | Method of forming a dual damascene opening using CVD Low-K material and spin-on-polymer |
GB0110241D0 (en) | 2001-04-26 | 2001-06-20 | Trikon Holdings Ltd | A method of filling a via or recess in a semiconductor substrate |
US20040253809A1 (en) * | 2001-08-18 | 2004-12-16 | Yao Xiang Yu | Forming a semiconductor structure using a combination of planarizing methods and electropolishing |
US6797983B2 (en) | 2002-01-30 | 2004-09-28 | United Microelectronics Corp. | Method of fabrication LCOS structure |
US7244997B2 (en) | 2003-07-08 | 2007-07-17 | President And Fellows Of Harvard College | Magneto-luminescent transducer |
-
2004
- 2004-09-15 CN CNB2004100665158A patent/CN100442108C/zh not_active Expired - Fee Related
-
2006
- 2006-03-23 US US11/388,359 patent/US7557031B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5270263A (en) * | 1991-12-20 | 1993-12-14 | Micron Technology, Inc. | Process for depositing aluminum nitride (AlN) using nitrogen plasma sputtering |
JPH05275366A (ja) * | 1992-01-24 | 1993-10-22 | Micron Technol Inc | 埋込み形および突起状タングステンプラグを形成するための化学的・機械的ポリッシング方法 |
EP0670591A2 (en) * | 1994-03-04 | 1995-09-06 | Motorola, Inc. | Method for chemical mechanical polishing a semiconductor device using slurry |
CN1312483A (zh) * | 2001-03-15 | 2001-09-12 | 东南大学 | 彩色液晶像素驱动晶体管的制造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20070026634A1 (en) | 2007-02-01 |
CN1749814A (zh) | 2006-03-22 |
US7557031B2 (en) | 2009-07-07 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Effective date: 20111129 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20111129 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Co-patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20081210 Termination date: 20180915 |
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CF01 | Termination of patent right due to non-payment of annual fee |