EP0670591A3 - Method for chemical mechanical polishing a semiconductor device using slurry. - Google Patents
Method for chemical mechanical polishing a semiconductor device using slurry. Download PDFInfo
- Publication number
- EP0670591A3 EP0670591A3 EP95102959A EP95102959A EP0670591A3 EP 0670591 A3 EP0670591 A3 EP 0670591A3 EP 95102959 A EP95102959 A EP 95102959A EP 95102959 A EP95102959 A EP 95102959A EP 0670591 A3 EP0670591 A3 EP 0670591A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- slurry
- semiconductor device
- mechanical polishing
- chemical mechanical
- polishing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title 1
- 238000005498 polishing Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000002002 slurry Substances 0.000 title 1
- 239000000126 substance Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US205423 | 1994-03-04 | ||
US08/205,423 US6027997A (en) | 1994-03-04 | 1994-03-04 | Method for chemical mechanical polishing a semiconductor device using slurry |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0670591A2 EP0670591A2 (en) | 1995-09-06 |
EP0670591A3 true EP0670591A3 (en) | 1995-12-27 |
Family
ID=22762127
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP95102959A Withdrawn EP0670591A3 (en) | 1994-03-04 | 1995-03-02 | Method for chemical mechanical polishing a semiconductor device using slurry. |
Country Status (5)
Country | Link |
---|---|
US (1) | US6027997A (en) |
EP (1) | EP0670591A3 (en) |
JP (1) | JPH07288244A (en) |
KR (1) | KR950034564A (en) |
TW (1) | TW258822B (en) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11138426A (en) * | 1997-11-11 | 1999-05-25 | Tokyo Electron Ltd | Polishing device |
JPH11233621A (en) | 1998-02-16 | 1999-08-27 | Mitsubishi Electric Corp | Semiconductor device and its manufacture |
US6727170B2 (en) | 1998-02-16 | 2004-04-27 | Renesas Technology Corp. | Semiconductor device having an improved interlayer conductor connections and a manufacturing method thereof |
US6180422B1 (en) * | 1998-05-06 | 2001-01-30 | International Business Machines Corporation | Endpoint detection by chemical reaction |
US6284560B1 (en) * | 1998-12-18 | 2001-09-04 | Eastman Kodak Company | Method for producing co-planar surface structures |
US6225224B1 (en) * | 1999-05-19 | 2001-05-01 | Infineon Technologies Norht America Corp. | System for dispensing polishing liquid during chemical mechanical polishing of a semiconductor wafer |
US6777738B2 (en) | 1999-06-09 | 2004-08-17 | Renesas Technology Corp. | Semiconductor integrated circuit |
US6534327B2 (en) | 2000-04-13 | 2003-03-18 | Texas Instruments Incorporated | Method for reworking metal layers on integrated circuit bond pads |
JP2001358214A (en) | 2000-06-15 | 2001-12-26 | Mitsubishi Electric Corp | Semiconductor device and its manufacturing method |
US6541384B1 (en) | 2000-09-08 | 2003-04-01 | Applied Materials, Inc. | Method of initiating cooper CMP process |
US6593182B2 (en) * | 2001-03-19 | 2003-07-15 | Macronix International Co., Ltd. | Method for forming multiple gate oxide layer with the plasma oxygen doping |
US6515488B1 (en) | 2001-05-07 | 2003-02-04 | Stmicroelectronics, Inc. | Fingerprint detector with scratch resistant surface and embedded ESD protection grid |
DE10133873B4 (en) * | 2001-07-12 | 2005-04-28 | Infineon Technologies Ag | Method of making contacts for integrated circuits |
US20040092102A1 (en) * | 2002-11-12 | 2004-05-13 | Sachem, Inc. | Chemical mechanical polishing composition and method |
US20050022456A1 (en) * | 2003-07-30 | 2005-02-03 | Babu S. V. | Polishing slurry and method for chemical-mechanical polishing of copper |
US7186653B2 (en) * | 2003-07-30 | 2007-03-06 | Climax Engineered Materials, Llc | Polishing slurries and methods for chemical mechanical polishing |
JP2005340328A (en) * | 2004-05-25 | 2005-12-08 | Fujitsu Ltd | Method of manufacturing semiconductor device |
CN100442108C (en) * | 2004-09-15 | 2008-12-10 | 中芯国际集成电路制造(上海)有限公司 | Aluminum cemical mechanical polishing eat-back for liquid crystal device on silicon |
US8124525B1 (en) | 2010-10-27 | 2012-02-28 | International Business Machines Corporation | Method of forming self-aligned local interconnect and structure formed thereby |
US9583442B2 (en) | 2015-06-29 | 2017-02-28 | International Business Machines Corporation | Interconnect structure including middle of line (MOL) metal layer local interconnect on etch stop layer |
US20210299816A1 (en) * | 2020-03-25 | 2021-09-30 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Cmp polishing pad with protruding structures having engineered open void space |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4992135A (en) * | 1990-07-24 | 1991-02-12 | Micron Technology, Inc. | Method of etching back of tungsten layers on semiconductor wafers, and solution therefore |
DE3939661A1 (en) * | 1989-11-30 | 1991-06-13 | Wacker Chemitronic | Controlling copper incorporation into silicon wafers - during polishing by adding complexing ligands |
DE4301451A1 (en) * | 1992-01-24 | 1993-08-05 | Micron Technology Inc |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3385682A (en) * | 1965-04-29 | 1968-05-28 | Sprague Electric Co | Method and reagent for surface polishing |
US4475981A (en) * | 1983-10-28 | 1984-10-09 | Ampex Corporation | Metal polishing composition and process |
US4491500A (en) * | 1984-02-17 | 1985-01-01 | Rem Chemicals, Inc. | Method for refinement of metal surfaces |
US4944836A (en) * | 1985-10-28 | 1990-07-31 | International Business Machines Corporation | Chem-mech polishing method for producing coplanar metal/insulator films on a substrate |
US4956313A (en) * | 1987-08-17 | 1990-09-11 | International Business Machines Corporation | Via-filling and planarization technique |
US4959113C1 (en) * | 1989-07-31 | 2001-03-13 | Rodel Inc | Method and composition for polishing metal surfaces |
US5222329A (en) * | 1992-03-26 | 1993-06-29 | Micron Technology, Inc. | Acoustical method and system for detecting and controlling chemical-mechanical polishing (CMP) depths into layers of conductors, semiconductors, and dielectric materials |
US5340370A (en) * | 1993-11-03 | 1994-08-23 | Intel Corporation | Slurries for chemical mechanical polishing |
-
1994
- 1994-03-04 US US08/205,423 patent/US6027997A/en not_active Expired - Lifetime
-
1995
- 1995-01-06 TW TW084100076A patent/TW258822B/zh not_active IP Right Cessation
- 1995-02-23 KR KR1019950003510A patent/KR950034564A/en not_active Application Discontinuation
- 1995-03-02 JP JP6864395A patent/JPH07288244A/en active Pending
- 1995-03-02 EP EP95102959A patent/EP0670591A3/en not_active Withdrawn
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3939661A1 (en) * | 1989-11-30 | 1991-06-13 | Wacker Chemitronic | Controlling copper incorporation into silicon wafers - during polishing by adding complexing ligands |
US4992135A (en) * | 1990-07-24 | 1991-02-12 | Micron Technology, Inc. | Method of etching back of tungsten layers on semiconductor wafers, and solution therefore |
DE4301451A1 (en) * | 1992-01-24 | 1993-08-05 | Micron Technology Inc |
Non-Patent Citations (2)
Title |
---|
KAUFMAN ET AL: "Chemical-Mechanical polishing for fabricating patterned W metal features as chip interconnects", JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 138, no. 11, MANCHESTER, NEW HAMPSHIRE US, pages 3460 - 3465, XP000248109 * |
MENDEL: "Polishing of Silicon", SOLID STATE TECHNOLOGY, vol. 10, no. 8, WASHINGTON US, pages 27 - 39 * |
Also Published As
Publication number | Publication date |
---|---|
US6027997A (en) | 2000-02-22 |
TW258822B (en) | 1995-10-01 |
KR950034564A (en) | 1995-12-28 |
EP0670591A2 (en) | 1995-09-06 |
JPH07288244A (en) | 1995-10-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
AK | Designated contracting states |
Kind code of ref document: A2 Designated state(s): DE FR GB IT |
|
PUAL | Search report despatched |
Free format text: ORIGINAL CODE: 0009013 |
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AK | Designated contracting states |
Kind code of ref document: A3 Designated state(s): DE FR GB IT |
|
17P | Request for examination filed |
Effective date: 19960627 |
|
17Q | First examination report despatched |
Effective date: 19960725 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
18D | Application deemed to be withdrawn |
Effective date: 19991109 |