TW225042B - A production method of SRAM cell low impedance source and its structure T - Google Patents

A production method of SRAM cell low impedance source and its structure T

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Publication number
TW225042B
TW225042B TW83100550A TW83100550A TW225042B TW 225042 B TW225042 B TW 225042B TW 83100550 A TW83100550 A TW 83100550A TW 83100550 A TW83100550 A TW 83100550A TW 225042 B TW225042 B TW 225042B
Authority
TW
Taiwan
Prior art keywords
source
gate
low impedance
layer
area
Prior art date
Application number
TW83100550A
Other languages
Chinese (zh)
Inventor
Jenn-Chyou Shyu
Shan-Jye Jean
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW83100550A priority Critical patent/TW225042B/en
Application granted granted Critical
Publication of TW225042B publication Critical patent/TW225042B/en

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Abstract

A production method of SRAM cell low impedance source which comprises: the step of forming a gate oxide layer and a composite silicon gate on the silicon layer and undergoing N- ion implantation to form the N- LDD; the step of coating the source mask to coat a photo resistor on the surrounding area of the source and undergoing a high concentration N+ ion implantation only to the source area to overlap the original N- LDD to form a N+ source area; the step of removing the photo resistor; the step of precipitating a oxide layer and counter etching to form a side wall layer of the composite silicon gate; and the step of undergoing N+ ion implantation on the silicon layer to form a source gate N+ area; by implanting the N+ layer on the source gate in previous steps to enable the source gate to exhibit low impedance, high saturation current value, better stability and minimized the space between the two gates within the tolerable range.
TW83100550A 1994-01-24 1994-01-24 A production method of SRAM cell low impedance source and its structure T TW225042B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW83100550A TW225042B (en) 1994-01-24 1994-01-24 A production method of SRAM cell low impedance source and its structure T

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW83100550A TW225042B (en) 1994-01-24 1994-01-24 A production method of SRAM cell low impedance source and its structure T

Publications (1)

Publication Number Publication Date
TW225042B true TW225042B (en) 1994-06-11

Family

ID=51348298

Family Applications (1)

Application Number Title Priority Date Filing Date
TW83100550A TW225042B (en) 1994-01-24 1994-01-24 A production method of SRAM cell low impedance source and its structure T

Country Status (1)

Country Link
TW (1) TW225042B (en)

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