TW375770B - Process for asymmetric MOSFET - Google Patents
Process for asymmetric MOSFETInfo
- Publication number
- TW375770B TW375770B TW086102550A TW86102550A TW375770B TW 375770 B TW375770 B TW 375770B TW 086102550 A TW086102550 A TW 086102550A TW 86102550 A TW86102550 A TW 86102550A TW 375770 B TW375770 B TW 375770B
- Authority
- TW
- Taiwan
- Prior art keywords
- asymmetric
- insulating layer
- mosfet
- undergoing
- gate
- Prior art date
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention relates to a process for producing asymmetric MOSFET, in particular by means of a simple mask and simple etching procedures to produce an asymmetric MOSFET; comprising primarily the steps of: defining gate on a silicon substrate and forming a light doped region on both sides of gate, then after depositing an insulating layer and source masking step, undergoing large tilt angle ion implant with P-ion in the state of exposed source region, so a pocket P- punchthrough stopper is therefore formed at said source electrode; subsequently, after subjecting said insulating layer to nonuniform direction back etching and turning it into a spacer, undergoing N+ ion implant to simply form an asymmetric structure.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW086102550A TW375770B (en) | 1997-03-04 | 1997-03-04 | Process for asymmetric MOSFET |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW086102550A TW375770B (en) | 1997-03-04 | 1997-03-04 | Process for asymmetric MOSFET |
Publications (1)
Publication Number | Publication Date |
---|---|
TW375770B true TW375770B (en) | 1999-12-01 |
Family
ID=57941925
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086102550A TW375770B (en) | 1997-03-04 | 1997-03-04 | Process for asymmetric MOSFET |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW375770B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9553166B1 (en) | 2015-08-31 | 2017-01-24 | International Business Machines Corporation | Asymmetric III-V MOSFET on silicon substrate |
-
1997
- 1997-03-04 TW TW086102550A patent/TW375770B/en not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9553166B1 (en) | 2015-08-31 | 2017-01-24 | International Business Machines Corporation | Asymmetric III-V MOSFET on silicon substrate |
US9773903B2 (en) | 2015-08-31 | 2017-09-26 | International Business Machines Corporation | Asymmetric III-V MOSFET on silicon substrate |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |