TW375770B - Process for asymmetric MOSFET - Google Patents

Process for asymmetric MOSFET

Info

Publication number
TW375770B
TW375770B TW086102550A TW86102550A TW375770B TW 375770 B TW375770 B TW 375770B TW 086102550 A TW086102550 A TW 086102550A TW 86102550 A TW86102550 A TW 86102550A TW 375770 B TW375770 B TW 375770B
Authority
TW
Taiwan
Prior art keywords
asymmetric
insulating layer
mosfet
undergoing
gate
Prior art date
Application number
TW086102550A
Other languages
Chinese (zh)
Inventor
Chun-Hsing Shih
Original Assignee
Winbond Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Winbond Electronics Corp filed Critical Winbond Electronics Corp
Priority to TW086102550A priority Critical patent/TW375770B/en
Application granted granted Critical
Publication of TW375770B publication Critical patent/TW375770B/en

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  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

The invention relates to a process for producing asymmetric MOSFET, in particular by means of a simple mask and simple etching procedures to produce an asymmetric MOSFET; comprising primarily the steps of: defining gate on a silicon substrate and forming a light doped region on both sides of gate, then after depositing an insulating layer and source masking step, undergoing large tilt angle ion implant with P-ion in the state of exposed source region, so a pocket P- punchthrough stopper is therefore formed at said source electrode; subsequently, after subjecting said insulating layer to nonuniform direction back etching and turning it into a spacer, undergoing N+ ion implant to simply form an asymmetric structure.
TW086102550A 1997-03-04 1997-03-04 Process for asymmetric MOSFET TW375770B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW086102550A TW375770B (en) 1997-03-04 1997-03-04 Process for asymmetric MOSFET

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW086102550A TW375770B (en) 1997-03-04 1997-03-04 Process for asymmetric MOSFET

Publications (1)

Publication Number Publication Date
TW375770B true TW375770B (en) 1999-12-01

Family

ID=57941925

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086102550A TW375770B (en) 1997-03-04 1997-03-04 Process for asymmetric MOSFET

Country Status (1)

Country Link
TW (1) TW375770B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9553166B1 (en) 2015-08-31 2017-01-24 International Business Machines Corporation Asymmetric III-V MOSFET on silicon substrate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9553166B1 (en) 2015-08-31 2017-01-24 International Business Machines Corporation Asymmetric III-V MOSFET on silicon substrate
US9773903B2 (en) 2015-08-31 2017-09-26 International Business Machines Corporation Asymmetric III-V MOSFET on silicon substrate

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees