TW223685B - - Google Patents
Info
- Publication number
- TW223685B TW223685B TW081108627A TW81108627A TW223685B TW 223685 B TW223685 B TW 223685B TW 081108627 A TW081108627 A TW 081108627A TW 81108627 A TW81108627 A TW 81108627A TW 223685 B TW223685 B TW 223685B
- Authority
- TW
- Taiwan
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/781—Masking faults in memories by using spares or by reconfiguring using programmable devices combined in a redundant decoder
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
- G11C29/806—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout by reducing size of decoders
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
- G11C29/808—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout using a flexible replacement scheme
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
- G11C29/846—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability by choosing redundant lines at an output stage
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/DE1992/000316 WO1993021578A1 (de) | 1992-04-16 | 1992-04-16 | Integrierter halbleiterspeicher mit redundanzeinrichtung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW223685B true TW223685B (US07224749-20070529-P00002.png) | 1994-05-11 |
Family
ID=6874978
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW081108627A TW223685B (US07224749-20070529-P00002.png) | 1992-04-16 | 1992-10-29 |
Country Status (8)
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ATE184728T1 (de) * | 1992-07-02 | 1999-10-15 | Atmel Corp | Unterbrechungsfreies, wahlfreies zugriffspeichersystem. |
| EP0675440B1 (en) * | 1994-03-29 | 1998-08-05 | STMicroelectronics S.r.l. | Redundancy circuitry for a semiconductor memory device |
| KR0140177B1 (ko) * | 1994-12-29 | 1998-07-15 | 김광호 | 반도체메모리소자의 메모리셀어레이의 배열방법 |
| US5523975A (en) * | 1995-02-08 | 1996-06-04 | Alliance Semiconductor Corporation | Redundancy scheme for monolithic memories |
| JP2629645B2 (ja) * | 1995-04-20 | 1997-07-09 | 日本電気株式会社 | 半導体記憶装置 |
| ATE220807T1 (de) * | 1995-08-09 | 2002-08-15 | Infineon Technologies Ag | Integrierter halbleiterspeicher mit redundanzspeicherzellen |
| US5699307A (en) * | 1996-06-28 | 1997-12-16 | Intel Corporation | Method and apparatus for providing redundant memory in an integrated circuit utilizing a subarray shuffle replacement scheme |
| KR100247920B1 (ko) | 1996-12-31 | 2000-03-15 | 윤종용 | 반도체메모리장치의로우리던던시구조및불량셀구제방법 |
| US5831913A (en) * | 1997-03-31 | 1998-11-03 | International Business Machines Corporation | Method of making a memory fault-tolerant using a variable size redundancy replacement configuration |
| US5831914A (en) * | 1997-03-31 | 1998-11-03 | International Business Machines Corporation | Variable size redundancy replacement architecture to make a memory fault-tolerant |
| DE19729579C2 (de) * | 1997-07-10 | 2000-12-07 | Siemens Ag | Verfahren zum Aktivieren einer redundanten Wortleitung bei Inter-Segment-Redundanz bei einem Halbleiterspeicher mit in Segmenten organisierten Wortleitungen |
| US5978931A (en) * | 1997-07-16 | 1999-11-02 | International Business Machines Corporation | Variable domain redundancy replacement configuration for a memory device |
| US5881003A (en) * | 1997-07-16 | 1999-03-09 | International Business Machines Corporation | Method of making a memory device fault tolerant using a variable domain redundancy replacement configuration |
| US5986950A (en) * | 1997-10-15 | 1999-11-16 | International Business Machines Corporation | Use of redundant circuits to improve the reliability of an integrated circuit |
| US5970000A (en) * | 1998-02-02 | 1999-10-19 | International Business Machines Corporation | Repairable semiconductor integrated circuit memory by selective assignment of groups of redundancy elements to domains |
| WO1999054819A1 (de) * | 1998-04-17 | 1999-10-28 | Infineon Technologies Ag | Speicheranordnung mit redundanten speicherzellen und verfahren zum zugriff auf redundante speicherzellen |
| US6072735A (en) * | 1998-06-22 | 2000-06-06 | Lucent Technologies, Inc. | Built-in redundancy architecture for computer memories |
| DE19836578C2 (de) * | 1998-08-12 | 2000-08-17 | Siemens Ag | Integrierter Speicher mit Interblockredundanz |
| US5978291A (en) * | 1998-09-30 | 1999-11-02 | International Business Machines Corporation | Sub-block redundancy replacement for a giga-bit scale DRAM |
| US6144593A (en) * | 1999-09-01 | 2000-11-07 | Micron Technology, Inc. | Circuit and method for a multiplexed redundancy scheme in a memory device |
| JP2001273788A (ja) * | 2000-03-29 | 2001-10-05 | Hitachi Ltd | 半導体記憶装置 |
| US6941528B2 (en) | 2003-08-28 | 2005-09-06 | International Business Machines Corporation | Use of a layout-optimization tool to increase the yield and reliability of VLSI designs |
| US20050048677A1 (en) * | 2003-08-29 | 2005-03-03 | International Business Machines Corporation | The use of a layout-optimization tool to increase the yield and reliability of vlsi designs |
| CN103473181B (zh) | 2007-01-26 | 2017-06-13 | 英特尔公司 | 分级式不可变内容可寻址存储器处理器 |
| US8504791B2 (en) | 2007-01-26 | 2013-08-06 | Hicamp Systems, Inc. | Hierarchical immutable content-addressable memory coprocessor |
| US8407428B2 (en) | 2010-05-20 | 2013-03-26 | Hicamp Systems, Inc. | Structured memory coprocessor |
| US9601199B2 (en) | 2007-01-26 | 2017-03-21 | Intel Corporation | Iterator register for structured memory |
| US7916540B2 (en) * | 2007-05-17 | 2011-03-29 | Samsung Electronics Co., Ltd. | Non-volatile memory devices and systems including bad blocks address re-mapped and methods of operating the same |
| US11024352B2 (en) | 2012-04-10 | 2021-06-01 | Samsung Electronics Co., Ltd. | Memory system for access concentration decrease management and access concentration decrease method |
| US9694934B2 (en) * | 2015-07-31 | 2017-07-04 | Inteplast Group Corporation | Bulk bin |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58102395A (ja) * | 1981-12-12 | 1983-06-17 | Nippon Telegr & Teleph Corp <Ntt> | 半導体記憶装置 |
| US4538247A (en) * | 1983-01-14 | 1985-08-27 | Fairchild Research Center | Redundant rows in integrated circuit memories |
| JPH0670880B2 (ja) * | 1983-01-21 | 1994-09-07 | 株式会社日立マイコンシステム | 半導体記憶装置 |
| JPS59203299A (ja) * | 1983-05-06 | 1984-11-17 | Nec Corp | 冗長ビット付メモリ |
| US4752914A (en) * | 1984-05-31 | 1988-06-21 | Fujitsu Limited | Semiconductor integrated circuit with redundant circuit replacement |
| JPS62264496A (ja) * | 1986-05-09 | 1987-11-17 | Matsushita Electronics Corp | 半導体集積記憶回路 |
| JPH02208897A (ja) * | 1989-02-08 | 1990-08-20 | Seiko Epson Corp | 半導体記憶装置 |
| JPH03252998A (ja) * | 1990-02-28 | 1991-11-12 | Sharp Corp | 半導体記憶装置 |
| US5153880A (en) * | 1990-03-12 | 1992-10-06 | Xicor, Inc. | Field-programmable redundancy apparatus for memory arrays |
-
1992
- 1992-04-16 KR KR1019940703655A patent/KR100248165B1/ko not_active IP Right Cessation
- 1992-04-16 EP EP92908874A patent/EP0636258B1/de not_active Expired - Lifetime
- 1992-04-16 DE DE59205881T patent/DE59205881D1/de not_active Expired - Lifetime
- 1992-04-16 WO PCT/DE1992/000316 patent/WO1993021578A1/de active IP Right Grant
- 1992-04-16 JP JP04507953A patent/JP3129440B2/ja not_active Expired - Fee Related
- 1992-04-16 US US07/920,315 patent/US5459690A/en not_active Expired - Lifetime
- 1992-10-29 TW TW081108627A patent/TW223685B/zh active
-
1998
- 1998-01-12 HK HK98100230A patent/HK1001176A1/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| US5459690A (en) | 1995-10-17 |
| EP0636258B1 (de) | 1996-03-27 |
| JPH07502361A (ja) | 1995-03-09 |
| JP3129440B2 (ja) | 2001-01-29 |
| KR100248165B1 (ko) | 2000-03-15 |
| KR950701125A (ko) | 1995-02-20 |
| WO1993021578A1 (de) | 1993-10-28 |
| DE59205881D1 (de) | 1996-05-02 |
| EP0636258A1 (de) | 1995-02-01 |
| HK1001176A1 (en) | 1998-05-29 |
