TW217458B - - Google Patents
Info
- Publication number
- TW217458B TW217458B TW081101868A TW81101868A TW217458B TW 217458 B TW217458 B TW 217458B TW 081101868 A TW081101868 A TW 081101868A TW 81101868 A TW81101868 A TW 81101868A TW 217458 B TW217458 B TW 217458B
- Authority
- TW
- Taiwan
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
- C03C17/245—Oxides by deposition from the vapour phase
- C03C17/2453—Coating containing SnO2
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/23—Mixtures
- C03C2217/231—In2O3/SnO2
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/24—Doped oxides
- C03C2217/241—Doped oxides with halides
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/15—Deposition methods from the vapour phase
- C03C2218/154—Deposition methods from the vapour phase by sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Photovoltaic Devices (AREA)
- Physical Vapour Deposition (AREA)
- Surface Treatment Of Glass (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/682,542 US5135581A (en) | 1991-04-08 | 1991-04-08 | Light transmissive electrically conductive oxide electrode formed in the presence of a stabilizing gas |
Publications (1)
Publication Number | Publication Date |
---|---|
TW217458B true TW217458B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-12-11 |
Family
ID=24740148
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW081101868A TW217458B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1991-04-08 | 1992-03-12 |
Country Status (6)
Families Citing this family (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05148634A (ja) * | 1991-11-22 | 1993-06-15 | Nec Corp | スパツタリング装置 |
JP2912506B2 (ja) * | 1992-10-21 | 1999-06-28 | シャープ株式会社 | 透明導電膜の形成方法 |
US5911856A (en) * | 1993-09-03 | 1999-06-15 | Canon Kabushiki Kaisha | Method for forming thin film |
US5473456A (en) * | 1993-10-27 | 1995-12-05 | At&T Corp. | Method for growing transparent conductive gallium-indium-oxide films by sputtering |
US5397920A (en) * | 1994-03-24 | 1995-03-14 | Minnesota Mining And Manufacturing Company | Light transmissive, electrically-conductive, oxide film and methods of production |
JPH09260695A (ja) * | 1996-03-19 | 1997-10-03 | Canon Inc | 光起電力素子アレーの製造方法 |
JP3689524B2 (ja) * | 1996-03-22 | 2005-08-31 | キヤノン株式会社 | 酸化アルミニウム膜及びその形成方法 |
JP3514408B2 (ja) * | 1996-09-12 | 2004-03-31 | キヤノン株式会社 | 透明導電膜をスパッタ形成する方法 |
SE509933C2 (sv) * | 1996-09-16 | 1999-03-22 | Scandinavian Solar Ab | Sätt och anordning att framställa ett spektralselektivt absorberande skikt till solkollektorer samt framställt skikt |
US6093290A (en) * | 1997-05-14 | 2000-07-25 | Canon Kabushiki Kaisha | Method of generating a reciprocating plurality of magnetic fluxes on a target |
JP2000017437A (ja) * | 1998-07-01 | 2000-01-18 | Sony Corp | 成膜装置 |
US20020084455A1 (en) * | 1999-03-30 | 2002-07-04 | Jeffery T. Cheung | Transparent and conductive zinc oxide film with low growth temperature |
US6240622B1 (en) * | 1999-07-09 | 2001-06-05 | Micron Technology, Inc. | Integrated circuit inductors |
WO2001048830A1 (en) * | 1999-12-24 | 2001-07-05 | Koninklijke Philips Electronics N.V. | ELECTRO-OPTICAL DEVICE HAVING AN ITO LAYER, A SiN LAYER AND AN INTERMEDIATE SILICON OXIDE LAYER |
US6368470B1 (en) | 1999-12-29 | 2002-04-09 | Southwall Technologies, Inc. | Hydrogenating a layer of an antireflection coating |
DE10023459A1 (de) * | 2000-05-12 | 2001-11-15 | Balzers Process Systems Gmbh | Indium-Zinn-Oxid (ITO)-Schicht und Verfahren zur Herstellung derselben |
KR100778835B1 (ko) * | 2000-12-28 | 2007-11-22 | 엘지.필립스 엘시디 주식회사 | 액정표시장치의 제조방법 |
KR100776505B1 (ko) * | 2000-12-30 | 2007-11-16 | 엘지.필립스 엘시디 주식회사 | 액정표시장치의 화소전극 제조 방법 |
DE10224990B3 (de) * | 2002-06-05 | 2004-03-11 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Abscheidung transparenter leitfähiger Schichten |
DE102004026231B4 (de) * | 2004-05-28 | 2019-01-31 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Bereichs mit reduzierter elektrischer Leitfähigkeit innerhalb einer Halbleiterschicht und optoelektronisches Halbleiterbauelement |
US7431992B2 (en) * | 2004-08-09 | 2008-10-07 | Ppg Industries Ohio, Inc. | Coated substrates that include an undercoating |
JP4733990B2 (ja) * | 2005-02-01 | 2011-07-27 | 株式会社昭和真空 | スパッタ装置 |
US7466376B2 (en) * | 2005-03-22 | 2008-12-16 | Konarka Technologies, Inc. | Photovoltaic cell |
US7597964B2 (en) * | 2005-08-02 | 2009-10-06 | Guardian Industries Corp. | Thermally tempered coated article with transparent conductive oxide (TCO) coating |
US8298380B2 (en) | 2006-05-23 | 2012-10-30 | Guardian Industries Corp. | Method of making thermally tempered coated article with transparent conductive oxide (TCO) coating in color compression configuration, and product made using same |
US7601558B2 (en) * | 2006-10-24 | 2009-10-13 | Applied Materials, Inc. | Transparent zinc oxide electrode having a graded oxygen content |
JP5099893B2 (ja) * | 2007-10-22 | 2012-12-19 | 日東電工株式会社 | 透明導電性フィルム、その製造方法及びそれを備えたタッチパネル |
CN102239564A (zh) * | 2008-11-05 | 2011-11-09 | 欧瑞康太阳能股份公司(特吕巴赫) | 太阳能电池器件及其制造方法 |
JP5168406B2 (ja) * | 2009-03-18 | 2013-03-21 | 富士電機株式会社 | 太陽電池モジュール |
WO2011057189A1 (en) * | 2009-11-08 | 2011-05-12 | First Solar, Inc. | Back contact deposition using water-doped gas mixtures |
US9862640B2 (en) | 2010-01-16 | 2018-01-09 | Cardinal Cg Company | Tin oxide overcoat indium tin oxide coatings, coated glazings, and production methods |
US10060180B2 (en) | 2010-01-16 | 2018-08-28 | Cardinal Cg Company | Flash-treated indium tin oxide coatings, production methods, and insulating glass unit transparent conductive coating technology |
US10000411B2 (en) | 2010-01-16 | 2018-06-19 | Cardinal Cg Company | Insulating glass unit transparent conductivity and low emissivity coating technology |
US11155493B2 (en) | 2010-01-16 | 2021-10-26 | Cardinal Cg Company | Alloy oxide overcoat indium tin oxide coatings, coated glazings, and production methods |
WO2011088330A2 (en) | 2010-01-16 | 2011-07-21 | Cardinal Cg Company | High quality emission control coatings, emission control glazings, and production methods |
US10000965B2 (en) | 2010-01-16 | 2018-06-19 | Cardinal Cg Company | Insulating glass unit transparent conductive coating technology |
EP2360290A1 (en) * | 2010-02-11 | 2011-08-24 | Applied Materials, Inc. | Method for producing an ITO layer and sputtering system |
WO2012083220A2 (en) * | 2010-12-16 | 2012-06-21 | The Regents Of The University Of California | Generation of highly n-type, defect passivated transition metal oxides using plasma fluorine insertion |
JP2013060632A (ja) * | 2011-09-14 | 2013-04-04 | National Central Univ | 純すずターゲット材料がマグネトロンスパッタ法を利用したフッ素ドープ酸化すず薄膜の製造方法 |
JP2013082954A (ja) * | 2011-10-06 | 2013-05-09 | National Central Univ | 純金属ターゲットで反応性スパッタリング方法を用いて作製されたフッ化物及びフッ素をドープした酸化物薄膜 |
JP2014095099A (ja) * | 2012-11-07 | 2014-05-22 | Sumitomo Metal Mining Co Ltd | 透明導電膜積層体及びその製造方法、並びに薄膜太陽電池及びその製造方法 |
EP2918699A1 (de) * | 2014-03-14 | 2015-09-16 | Justus-Liebig-Universität Gießen | Verfahren zur Herstellung von Metalloxid-Halbleiterschichten und Verwendung von solchen Metalloxid-Halbleiterschichten in elektronischen Bauteilen |
CN207552434U (zh) * | 2017-12-14 | 2018-06-29 | 米亚索乐装备集成(福建)有限公司 | 一种用于太阳能电池的溅射镀膜装置 |
US20200010948A1 (en) * | 2018-07-05 | 2020-01-09 | Beijing Apollo Ding Rong Solar Technology Co., Ltd. | Shielded sputter deposition apparatus and method |
US11131018B2 (en) * | 2018-08-14 | 2021-09-28 | Viavi Solutions Inc. | Coating material sputtered in presence of argon-helium based coating |
US11028012B2 (en) | 2018-10-31 | 2021-06-08 | Cardinal Cg Company | Low solar heat gain coatings, laminated glass assemblies, and methods of producing same |
CN109830561B (zh) * | 2019-02-20 | 2021-09-03 | 成都中建材光电材料有限公司 | 一种碲化镉薄膜太阳能电池组件及其制备方法 |
US20220115503A1 (en) * | 2020-10-12 | 2022-04-14 | Board Of Regents, The University Of Texas System | Methods of Design and Use of High Mobility P-Type Metal Oxides |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE515314A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1949-04-18 | |||
US3477936A (en) * | 1967-06-29 | 1969-11-11 | Ppg Industries Inc | Sputtering of metals in an atmosphere of fluorine and oxygen |
US3506556A (en) * | 1968-02-28 | 1970-04-14 | Ppg Industries Inc | Sputtering of metal oxide films in the presence of hydrogen and oxygen |
DE2930373A1 (de) * | 1979-07-26 | 1981-02-19 | Siemens Ag | Verfahren zum herstellen transparenter, elektrisch leitender indiumoxid (in tief 2 o tief 3 )-schichten |
US4532537A (en) * | 1982-09-27 | 1985-07-30 | Rca Corporation | Photodetector with enhanced light absorption |
US4623601A (en) * | 1985-06-04 | 1986-11-18 | Atlantic Richfield Company | Photoconductive device containing zinc oxide transparent conductive layer |
JPH0645888B2 (ja) * | 1985-12-17 | 1994-06-15 | キヤノン株式会社 | 堆積膜形成法 |
US4940495A (en) * | 1988-12-07 | 1990-07-10 | Minnesota Mining And Manufacturing Company | Photovoltaic device having light transmitting electrically conductive stacked films |
US4990286A (en) * | 1989-03-17 | 1991-02-05 | President And Fellows Of Harvard College | Zinc oxyfluoride transparent conductor |
-
1991
- 1991-04-08 US US07/682,542 patent/US5135581A/en not_active Expired - Fee Related
-
1992
- 1992-02-28 EP EP92909299A patent/EP0579712A1/en not_active Withdrawn
- 1992-02-28 CA CA002104770A patent/CA2104770A1/en not_active Abandoned
- 1992-02-28 JP JP4508757A patent/JPH06506266A/ja active Pending
- 1992-02-28 WO PCT/US1992/001632 patent/WO1992017620A1/en not_active Application Discontinuation
- 1992-03-12 TW TW081101868A patent/TW217458B/zh active
Also Published As
Publication number | Publication date |
---|---|
CA2104770A1 (en) | 1992-10-09 |
WO1992017620A1 (en) | 1992-10-15 |
JPH06506266A (ja) | 1994-07-14 |
EP0579712A1 (en) | 1994-01-26 |
US5135581A (en) | 1992-08-04 |