TW202600920A - β-Ga2O3/β-Ga2O3疊層體之製造方法、利用該製造方法而得到的疊層體、及含有該疊層體之半導體裝置 - Google Patents

β-Ga2O3/β-Ga2O3疊層體之製造方法、利用該製造方法而得到的疊層體、及含有該疊層體之半導體裝置

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Publication number
TW202600920A
TW202600920A TW114105448A TW114105448A TW202600920A TW 202600920 A TW202600920 A TW 202600920A TW 114105448 A TW114105448 A TW 114105448A TW 114105448 A TW114105448 A TW 114105448A TW 202600920 A TW202600920 A TW 202600920A
Authority
TW
Taiwan
Prior art keywords
ga2o3
layer containing
stack
single crystal
divalent
Prior art date
Application number
TW114105448A
Other languages
English (en)
Chinese (zh)
Inventor
宮本美幸
田所弘晃
陳智瑨
Original Assignee
日商三菱瓦斯化學股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商三菱瓦斯化學股份有限公司 filed Critical 日商三菱瓦斯化學股份有限公司
Publication of TW202600920A publication Critical patent/TW202600920A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
TW114105448A 2024-02-22 2025-02-14 β-Ga2O3/β-Ga2O3疊層體之製造方法、利用該製造方法而得到的疊層體、及含有該疊層體之半導體裝置 TW202600920A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2024025355 2024-02-22
JP2024-025355 2024-02-22

Publications (1)

Publication Number Publication Date
TW202600920A true TW202600920A (zh) 2026-01-01

Family

ID=96847080

Family Applications (1)

Application Number Title Priority Date Filing Date
TW114105448A TW202600920A (zh) 2024-02-22 2025-02-14 β-Ga2O3/β-Ga2O3疊層體之製造方法、利用該製造方法而得到的疊層體、及含有該疊層體之半導體裝置

Country Status (3)

Country Link
JP (1) JPWO2025177952A1 (https=)
TW (1) TW202600920A (https=)
WO (1) WO2025177952A1 (https=)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6376600B2 (ja) * 2015-03-20 2018-08-22 株式会社タムラ製作所 結晶積層構造体の製造方法
JP7672604B2 (ja) * 2020-09-15 2025-05-08 株式会社ノベルクリスタルテクノロジー β－Ｇａ２Ｏ３系単結晶膜の製造方法
EP4411028B1 (en) * 2021-11-01 2026-02-25 Mitsubishi Gas Chemical Company, Inc. Method for producing beta-ga2o3/beta-ga2o3 multilayer body

Also Published As

Publication number Publication date
JPWO2025177952A1 (https=) 2025-08-28
WO2025177952A1 (ja) 2025-08-28

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