JPWO2025177952A1 - - Google Patents
Info
- Publication number
- JPWO2025177952A1 JPWO2025177952A1 JP2026502569A JP2026502569A JPWO2025177952A1 JP WO2025177952 A1 JPWO2025177952 A1 JP WO2025177952A1 JP 2026502569 A JP2026502569 A JP 2026502569A JP 2026502569 A JP2026502569 A JP 2026502569A JP WO2025177952 A1 JPWO2025177952 A1 JP WO2025177952A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
- C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2024025355 | 2024-02-22 | ||
| PCT/JP2025/004853 WO2025177952A1 (ja) | 2024-02-22 | 2025-02-14 | β－Ｇａ２Ｏ３／β－Ｇａ２Ｏ３積層体の製造方法、該製造方法によって得られた積層体、及び該積層体を含む半導体装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2025177952A1 true JPWO2025177952A1 (https=) | 2025-08-28 |
Family
ID=96847080
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2026502569A Pending JPWO2025177952A1 (https=) | 2024-02-22 | 2025-02-14 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPWO2025177952A1 (https=) |
| TW (1) | TW202600920A (https=) |
| WO (1) | WO2025177952A1 (https=) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6376600B2 (ja) * | 2015-03-20 | 2018-08-22 | 株式会社タムラ製作所 | 結晶積層構造体の製造方法 |
| JP7672604B2 (ja) * | 2020-09-15 | 2025-05-08 | 株式会社ノベルクリスタルテクノロジー | β－Ｇａ２Ｏ３系単結晶膜の製造方法 |
| EP4411028B1 (en) * | 2021-11-01 | 2026-02-25 | Mitsubishi Gas Chemical Company, Inc. | Method for producing beta-ga2o3/beta-ga2o3 multilayer body |
-
2025
- 2025-02-14 TW TW114105448A patent/TW202600920A/zh unknown
- 2025-02-14 JP JP2026502569A patent/JPWO2025177952A1/ja active Pending
- 2025-02-14 WO PCT/JP2025/004853 patent/WO2025177952A1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| TW202600920A (zh) | 2026-01-01 |
| WO2025177952A1 (ja) | 2025-08-28 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20260330 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20260330 |
|
| A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20260330 |