TW202505990A - 反鐵磁性體材料、磁性體及絕緣體的雙層膜、穿隧磁阻元件及磁記憶體 - Google Patents

反鐵磁性體材料、磁性體及絕緣體的雙層膜、穿隧磁阻元件及磁記憶體 Download PDF

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TW202505990A
TW202505990A TW113127404A TW113127404A TW202505990A TW 202505990 A TW202505990 A TW 202505990A TW 113127404 A TW113127404 A TW 113127404A TW 113127404 A TW113127404 A TW 113127404A TW 202505990 A TW202505990 A TW 202505990A
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Taiwan
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layer
antiferromagnetic
insulator
magnetoresistive element
antiferromagnetic layer
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TW113127404A
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English (en)
Chinese (zh)
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栂裕太
中辻知
田中克大
是常隆
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日商Jsr 股份有限公司
國立大學法人東京大學
國立大學法人東北大學
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Publication of TW202505990A publication Critical patent/TW202505990A/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/20—Spin-polarised current-controlled devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices

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  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
TW113127404A 2023-07-28 2024-07-23 反鐵磁性體材料、磁性體及絕緣體的雙層膜、穿隧磁阻元件及磁記憶體 TW202505990A (zh)

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US202363529410P 2023-07-28 2023-07-28
US63/529,410 2023-07-28

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JP (1) JPWO2025028421A1 (https=)
KR (1) KR20260044841A (https=)
CN (1) CN121368943A (https=)
TW (1) TW202505990A (https=)
WO (1) WO2025028421A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3735443B2 (ja) * 1997-04-03 2006-01-18 株式会社東芝 交換結合膜とそれを用いた磁気抵抗効果素子、磁気ヘッドおよび磁気記憶装置
WO2017018391A1 (ja) * 2015-07-24 2017-02-02 国立大学法人東京大学 メモリ素子
JP2019149446A (ja) 2018-02-27 2019-09-05 Tdk株式会社 スピン流磁化回転素子、磁気抵抗効果素子及び磁気メモリ
US11621391B2 (en) * 2018-12-28 2023-04-04 Intel Corporation Antiferromagnet based spin orbit torque memory device
WO2020166722A1 (ja) 2019-02-15 2020-08-20 国立大学法人東京大学 スピントロニクス素子及び磁気メモリ装置
JP7570816B2 (ja) * 2020-03-13 2024-10-22 国立大学法人 東京大学 ワイル反強磁性体粉末およびそれを用いた熱電変換素子
US20240194235A1 (en) 2021-04-12 2024-06-13 The University Of Tokyo Magnetic memory element

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WO2025028421A1 (ja) 2025-02-06
KR20260044841A (ko) 2026-04-02
JPWO2025028421A1 (https=) 2025-02-06
CN121368943A (zh) 2026-01-20

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