KR20260044841A - 반강자성체 재료, 자성체 및 절연체의 이층막, 터널 자기 저항 소자, 및 자기 메모리 - Google Patents
반강자성체 재료, 자성체 및 절연체의 이층막, 터널 자기 저항 소자, 및 자기 메모리Info
- Publication number
- KR20260044841A KR20260044841A KR1020257039432A KR20257039432A KR20260044841A KR 20260044841 A KR20260044841 A KR 20260044841A KR 1020257039432 A KR1020257039432 A KR 1020257039432A KR 20257039432 A KR20257039432 A KR 20257039432A KR 20260044841 A KR20260044841 A KR 20260044841A
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- antiferromagnetic
- magnetic
- tunnel magnetoresistance
- insulator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Materials of the active region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/20—Spin-polarised current-controlled devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
Landscapes
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202363529410P | 2023-07-28 | 2023-07-28 | |
| US63/529,410 | 2023-07-28 | ||
| PCT/JP2024/026734 WO2025028421A1 (ja) | 2023-07-28 | 2024-07-26 | 反強磁性体材料，磁性体および絶縁体の二層膜，トンネル磁気抵抗素子，及び磁気メモリ |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20260044841A true KR20260044841A (ko) | 2026-04-02 |
Family
ID=94395304
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020257039432A Pending KR20260044841A (ko) | 2023-07-28 | 2024-07-26 | 반강자성체 재료, 자성체 및 절연체의 이층막, 터널 자기 저항 소자, 및 자기 메모리 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPWO2025028421A1 (https=) |
| KR (1) | KR20260044841A (https=) |
| CN (1) | CN121368943A (https=) |
| TW (1) | TW202505990A (https=) |
| WO (1) | WO2025028421A1 (https=) |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3735443B2 (ja) * | 1997-04-03 | 2006-01-18 | 株式会社東芝 | 交換結合膜とそれを用いた磁気抵抗効果素子、磁気ヘッドおよび磁気記憶装置 |
| WO2017018391A1 (ja) * | 2015-07-24 | 2017-02-02 | 国立大学法人東京大学 | メモリ素子 |
| JP2019149446A (ja) | 2018-02-27 | 2019-09-05 | Tdk株式会社 | スピン流磁化回転素子、磁気抵抗効果素子及び磁気メモリ |
| US11621391B2 (en) * | 2018-12-28 | 2023-04-04 | Intel Corporation | Antiferromagnet based spin orbit torque memory device |
| WO2020166722A1 (ja) | 2019-02-15 | 2020-08-20 | 国立大学法人東京大学 | スピントロニクス素子及び磁気メモリ装置 |
| JP7570816B2 (ja) * | 2020-03-13 | 2024-10-22 | 国立大学法人 東京大学 | ワイル反強磁性体粉末およびそれを用いた熱電変換素子 |
| US20240194235A1 (en) | 2021-04-12 | 2024-06-13 | The University Of Tokyo | Magnetic memory element |
-
2024
- 2024-07-23 TW TW113127404A patent/TW202505990A/zh unknown
- 2024-07-26 JP JP2025537386A patent/JPWO2025028421A1/ja active Pending
- 2024-07-26 KR KR1020257039432A patent/KR20260044841A/ko active Pending
- 2024-07-26 CN CN202480040351.7A patent/CN121368943A/zh active Pending
- 2024-07-26 WO PCT/JP2024/026734 patent/WO2025028421A1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| TW202505990A (zh) | 2025-02-01 |
| WO2025028421A1 (ja) | 2025-02-06 |
| JPWO2025028421A1 (https=) | 2025-02-06 |
| CN121368943A (zh) | 2026-01-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
St.27 status event code: A-0-1-A10-A15-nap-PA0105 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| Q12 | Application published |
Free format text: ST27 STATUS EVENT CODE: A-1-1-Q10-Q12-NAP-PG1501 (AS PROVIDED BY THE NATIONAL OFFICE) |