CN121368943A - 反铁磁性体材料、磁性体及绝缘体的双层膜、隧穿磁阻元件及磁存储器 - Google Patents

反铁磁性体材料、磁性体及绝缘体的双层膜、隧穿磁阻元件及磁存储器

Info

Publication number
CN121368943A
CN121368943A CN202480040351.7A CN202480040351A CN121368943A CN 121368943 A CN121368943 A CN 121368943A CN 202480040351 A CN202480040351 A CN 202480040351A CN 121368943 A CN121368943 A CN 121368943A
Authority
CN
China
Prior art keywords
layer
antiferromagnetic
insulator
magnetic
tunneling magneto
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202480040351.7A
Other languages
English (en)
Chinese (zh)
Inventor
都贺裕太
是常隆
田中克大
中十知
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tohoku University NUC
JSR Corp
University of Tokyo NUC
Original Assignee
Tohoku University NUC
JSR Corp
University of Tokyo NUC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tohoku University NUC, JSR Corp, University of Tokyo NUC filed Critical Tohoku University NUC
Publication of CN121368943A publication Critical patent/CN121368943A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/20—Spin-polarised current-controlled devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices

Landscapes

  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
CN202480040351.7A 2023-07-28 2024-07-26 反铁磁性体材料、磁性体及绝缘体的双层膜、隧穿磁阻元件及磁存储器 Pending CN121368943A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202363529410P 2023-07-28 2023-07-28
US63/529,410 2023-07-28
PCT/JP2024/026734 WO2025028421A1 (ja) 2023-07-28 2024-07-26 反強磁性体材料，磁性体および絶縁体の二層膜，トンネル磁気抵抗素子，及び磁気メモリ

Publications (1)

Publication Number Publication Date
CN121368943A true CN121368943A (zh) 2026-01-20

Family

ID=94395304

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202480040351.7A Pending CN121368943A (zh) 2023-07-28 2024-07-26 反铁磁性体材料、磁性体及绝缘体的双层膜、隧穿磁阻元件及磁存储器

Country Status (5)

Country Link
JP (1) JPWO2025028421A1 (https=)
KR (1) KR20260044841A (https=)
CN (1) CN121368943A (https=)
TW (1) TW202505990A (https=)
WO (1) WO2025028421A1 (https=)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3735443B2 (ja) * 1997-04-03 2006-01-18 株式会社東芝 交換結合膜とそれを用いた磁気抵抗効果素子、磁気ヘッドおよび磁気記憶装置
WO2017018391A1 (ja) * 2015-07-24 2017-02-02 国立大学法人東京大学 メモリ素子
JP2019149446A (ja) 2018-02-27 2019-09-05 Tdk株式会社 スピン流磁化回転素子、磁気抵抗効果素子及び磁気メモリ
US11621391B2 (en) * 2018-12-28 2023-04-04 Intel Corporation Antiferromagnet based spin orbit torque memory device
WO2020166722A1 (ja) 2019-02-15 2020-08-20 国立大学法人東京大学 スピントロニクス素子及び磁気メモリ装置
JP7570816B2 (ja) * 2020-03-13 2024-10-22 国立大学法人 東京大学 ワイル反強磁性体粉末およびそれを用いた熱電変換素子
US20240194235A1 (en) 2021-04-12 2024-06-13 The University Of Tokyo Magnetic memory element

Also Published As

Publication number Publication date
TW202505990A (zh) 2025-02-01
WO2025028421A1 (ja) 2025-02-06
KR20260044841A (ko) 2026-04-02
JPWO2025028421A1 (https=) 2025-02-06

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