TW202449031A - 樹脂組成物、硬化膜、積層體、攝像裝置、半導體裝置、積層體之製造方法及具有接合電極之元件之製造方法 - Google Patents

樹脂組成物、硬化膜、積層體、攝像裝置、半導體裝置、積層體之製造方法及具有接合電極之元件之製造方法 Download PDF

Info

Publication number
TW202449031A
TW202449031A TW113102546A TW113102546A TW202449031A TW 202449031 A TW202449031 A TW 202449031A TW 113102546 A TW113102546 A TW 113102546A TW 113102546 A TW113102546 A TW 113102546A TW 202449031 A TW202449031 A TW 202449031A
Authority
TW
Taiwan
Prior art keywords
resin composition
laminate
cured film
weight
modifier
Prior art date
Application number
TW113102546A
Other languages
English (en)
Chinese (zh)
Inventor
國澤主
塩島太郎
野元颯
七里徳重
佐藤憲一朗
出口英寛
Original Assignee
日商積水化學工業股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商積水化學工業股份有限公司 filed Critical 日商積水化學工業股份有限公司
Publication of TW202449031A publication Critical patent/TW202449031A/zh

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48Insulating materials thereof
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04Polysiloxanes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/18Layered products comprising a layer of synthetic resin characterised by the use of special additives
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/28Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
    • B32B27/283Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polysiloxanes
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/42Block-or graft-polymers containing polysiloxane sequences
    • C08G77/44Block-or graft-polymers containing polysiloxane sequences containing only polysiloxane sequences
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/42Block-or graft-polymers containing polysiloxane sequences
    • C08G77/452Block-or graft-polymers containing polysiloxane sequences containing nitrogen-containing sequences
    • C08G77/458Block-or graft-polymers containing polysiloxane sequences containing nitrogen-containing sequences containing polyurethane sequences
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/10Block- or graft-copolymers containing polysiloxane sequences
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/10Block- or graft-copolymers containing polysiloxane sequences
    • C08L83/12Block- or graft-copolymers containing polysiloxane sequences containing polyether sequences
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/02Polysilicates
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/42Block-or graft-polymers containing polysiloxane sequences
    • C08G77/46Block-or graft-polymers containing polysiloxane sequences containing polyether sequences
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/0198Manufacture or treatment batch processes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/951Materials of bond pads
    • H10W72/952Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/732Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
TW113102546A 2023-01-23 2024-01-23 樹脂組成物、硬化膜、積層體、攝像裝置、半導體裝置、積層體之製造方法及具有接合電極之元件之製造方法 TW202449031A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023-008162 2023-01-23
JP2023008162 2023-01-23

Publications (1)

Publication Number Publication Date
TW202449031A true TW202449031A (zh) 2024-12-16

Family

ID=91970697

Family Applications (1)

Application Number Title Priority Date Filing Date
TW113102546A TW202449031A (zh) 2023-01-23 2024-01-23 樹脂組成物、硬化膜、積層體、攝像裝置、半導體裝置、積層體之製造方法及具有接合電極之元件之製造方法

Country Status (6)

Country Link
EP (1) EP4656684A1 (https=)
JP (1) JPWO2024157936A1 (https=)
KR (1) KR20250135777A (https=)
CN (1) CN120380085A (https=)
TW (1) TW202449031A (https=)
WO (1) WO2024157936A1 (https=)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100610481B1 (ko) 2004-12-30 2006-08-08 매그나칩 반도체 유한회사 수광영역을 넓힌 이미지센서 및 그 제조 방법
JP2020100819A (ja) * 2018-12-20 2020-07-02 東レ株式会社 樹脂組成物、硬化膜およびその製造方法
WO2021261403A1 (ja) * 2020-06-22 2021-12-30 積水化学工業株式会社 積層体、硬化性樹脂組成物、積層体の製造方法、接合電極を有する基板の製造方法、半導体装置及び撮像装置
US12473228B2 (en) * 2020-11-30 2025-11-18 Brightplus Oy Coating for glass articles
TW202313788A (zh) * 2021-08-11 2023-04-01 日商捷恩智股份有限公司 硬化性樹脂組成物、硬化物、電子零件、光學零件及複合構件
TW202340324A (zh) * 2021-12-23 2023-10-16 日商積水化學工業股份有限公司 硬化性樹脂組成物、硬化膜、積層體、攝像裝置、半導體裝置、積層體之製造方法、及具有接合電極之元件之製造方法
JP2023094125A (ja) * 2021-12-23 2023-07-05 積水化学工業株式会社 樹脂硬化物、硬化性樹脂組成物、積層体、撮像装置、半導体装置、積層体の製造方法及び接合電極を有する素子の製造方法

Also Published As

Publication number Publication date
EP4656684A1 (en) 2025-12-03
KR20250135777A (ko) 2025-09-15
CN120380085A (zh) 2025-07-25
JPWO2024157936A1 (https=) 2024-08-02
WO2024157936A1 (ja) 2024-08-02

Similar Documents

Publication Publication Date Title
JP7522910B2 (ja) 硬化性樹脂組成物、硬化膜、積層体、撮像装置、半導体装置、積層体の製造方法及び接合電極を有する素子の製造方法
CN1125138C (zh) 用于制造绝缘薄膜的烷氧基硅烷/有机聚合物组合物及其用途
JP5373736B2 (ja) 接着剤組成物及び接着剤シート、半導体装置保護用材料、及び半導体装置
TWI891818B (zh) 積層體、硬化性樹脂組成物、積層體之製造方法、具有接合電極之基板的製造方法、半導體裝置及攝影裝置
WO2012039384A1 (ja) 太陽電池内の絶縁膜形成用ポリイミド樹脂組成物及びそれを用いた太陽電池内の絶縁膜形成方法
JP2007091935A (ja) ポリマー、膜形成用組成物、絶縁膜およびその製造方法
JP2011187613A (ja) 半導体素子用絶縁膜
TW202521345A (zh) 硬化性樹脂組成物、硬化膜、積層體及半導體裝置
JP2023094125A (ja) 樹脂硬化物、硬化性樹脂組成物、積層体、撮像装置、半導体装置、積層体の製造方法及び接合電極を有する素子の製造方法
TW202449031A (zh) 樹脂組成物、硬化膜、積層體、攝像裝置、半導體裝置、積層體之製造方法及具有接合電極之元件之製造方法
JP2025007848A (ja) 硬化性フィルムの製造方法、硬化性フィルム、積層体、撮像装置、半導体装置及び積層体の製造方法
CN118055981A (zh) 固化性树脂组合物、固化膜、层叠体、拍摄装置、半导体装置、层叠体的制造方法和具有接合电极的元件的制造方法
WO2025009514A1 (ja) 硬化性樹脂組成物、硬化膜、積層体、撮像装置、半導体装置及び積層体の製造方法
TW202440795A (zh) 積層體、積層體之製造方法、元件之製造方法、攝像裝置、攝像裝置之製造方法、半導體裝置及半導體裝置之製造方法
JP5540416B2 (ja) ボラジン系樹脂組成物及びその製造方法、絶縁被膜及びその形成方法、並びに電子部品
JP4730723B2 (ja) ボラジン系樹脂の製造方法
JP5603586B2 (ja) トレンチ埋め込み用絶縁膜の形成方法
JP2024013537A (ja) 硬化性樹脂組成物、硬化膜、積層体、撮像装置及び半導体装置の製造方法
TW202501594A (zh) 晶圓加工用暫時接著材料、晶圓加工體及薄型晶圓之製造方法
JP5550118B2 (ja) ボラジン系樹脂組成物、絶縁被膜及びその形成方法
JP2006089630A (ja) ポリイミドシリコーン系樹脂組成物