TW202448988A - 化學增幅負型阻劑組成物及圖案形成方法 - Google Patents

化學增幅負型阻劑組成物及圖案形成方法 Download PDF

Info

Publication number
TW202448988A
TW202448988A TW113115200A TW113115200A TW202448988A TW 202448988 A TW202448988 A TW 202448988A TW 113115200 A TW113115200 A TW 113115200A TW 113115200 A TW113115200 A TW 113115200A TW 202448988 A TW202448988 A TW 202448988A
Authority
TW
Taiwan
Prior art keywords
group
carbon atoms
bond
atom
contain
Prior art date
Application number
TW113115200A
Other languages
English (en)
Chinese (zh)
Inventor
樋田源太郎
小林知洋
鈴木貴大
Original Assignee
日商信越化學工業股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商信越化學工業股份有限公司 filed Critical 日商信越化學工業股份有限公司
Publication of TW202448988A publication Critical patent/TW202448988A/zh

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/325—Non-aqueous compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
  • Steroid Compounds (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW113115200A 2023-04-25 2024-04-24 化學增幅負型阻劑組成物及圖案形成方法 TW202448988A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023-071288 2023-04-25
JP2023071288A JP2024157135A (ja) 2023-04-25 2023-04-25 化学増幅ネガ型レジスト組成物及びパターン形成方法

Publications (1)

Publication Number Publication Date
TW202448988A true TW202448988A (zh) 2024-12-16

Family

ID=93143160

Family Applications (1)

Application Number Title Priority Date Filing Date
TW113115200A TW202448988A (zh) 2023-04-25 2024-04-24 化學增幅負型阻劑組成物及圖案形成方法

Country Status (5)

Country Link
US (1) US20240377737A1 (https=)
JP (1) JP2024157135A (https=)
KR (1) KR102944887B1 (https=)
CN (1) CN118838116A (https=)
TW (1) TW202448988A (https=)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4425776B2 (ja) 2004-12-24 2010-03-03 信越化学工業株式会社 レジスト材料及びこれを用いたパターン形成方法
JP7310724B2 (ja) * 2020-06-04 2023-07-19 信越化学工業株式会社 オニウム塩、化学増幅ネガ型レジスト組成物及びレジストパターン形成方法
JP7647655B2 (ja) 2021-05-07 2025-03-18 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP7826834B2 (ja) * 2021-06-15 2026-03-10 信越化学工業株式会社 化学増幅ポジ型レジスト材料及びパターン形成方法
JP7679335B2 (ja) 2021-06-22 2025-05-19 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP7492492B2 (ja) 2021-06-25 2024-05-29 信越化学工業株式会社 レジスト材料及びパターン形成方法
JPWO2023002869A1 (https=) 2021-07-21 2023-01-26
JP7757915B2 (ja) 2021-10-20 2025-10-22 信越化学工業株式会社 レジスト材料及びパターン形成方法

Also Published As

Publication number Publication date
CN118838116A (zh) 2024-10-25
US20240377737A1 (en) 2024-11-14
KR20240157558A (ko) 2024-11-01
KR102944887B1 (ko) 2026-03-27
JP2024157135A (ja) 2024-11-07

Similar Documents

Publication Publication Date Title
KR102156480B1 (ko) 패턴 형성 방법
TWI853613B (zh) 聚合性單體、高分子化合物、阻劑組成物及圖案形成方法
TWI867362B (zh) 化學增幅阻劑組成物及圖案形成方法
TW202402733A (zh) 新穎鋶鹽、阻劑組成物及圖案形成方法
JP2021050307A (ja) ポリマー、化学増幅レジスト組成物及びパターン形成方法
CN117384130B (zh) 鎓盐、抗蚀剂组成物、及图案形成方法
TWI842121B (zh) 光酸產生劑、化學增幅阻劑組成物及圖案形成方法
TW202411197A (zh) 鎓鹽化合物、聚合物、阻劑組成物及圖案形成方法
TW202408993A (zh) 鎓鹽、阻劑組成物、及圖案形成方法
CN117586162A (zh) 鎓盐、化学增幅抗蚀剂组成物、及图案形成方法
TWI885374B (zh) 新穎鋶鹽型聚合性單體、高分子光酸產生劑、基礎樹脂、阻劑組成物及圖案形成方法
TWI863073B (zh) 鹽化合物、阻劑組成物及圖案形成方法
TWI863720B (zh) 阻劑組成物及圖案形成方法
CN119841753A (zh) 鎓盐型单体、聚合物、化学增幅抗蚀剂组成物及图案形成方法
TWI850979B (zh) 聚合物、阻劑組成物及圖案形成方法
TW202424011A (zh) 聚合物、阻劑組成物、及圖案形成方法
TW202448988A (zh) 化學增幅負型阻劑組成物及圖案形成方法
TWI860872B (zh) 化學增幅阻劑組成物及圖案形成方法
JP2025023601A (ja) オニウム塩、化学増幅レジスト組成物及びパターン形成方法
CN120652740A (zh) 抗蚀剂组成物及图案形成方法
TW202604814A (zh) 鎓鹽、化學增幅阻劑組成物及圖案形成方法
CN121956419A (zh) 抗蚀剂组成物及图案形成方法
TW202528380A (zh) 阻劑材料及圖案形成方法
TW202528379A (zh) 阻劑材料及圖案形成方法
JP2026006899A (ja) オニウム塩、化学増幅レジスト組成物及びパターン形成方法