TW202416451A - 半導體裝置及其預成型適配器和製造方法 - Google Patents

半導體裝置及其預成型適配器和製造方法 Download PDF

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TW202416451A
TW202416451A TW111138558A TW111138558A TW202416451A TW 202416451 A TW202416451 A TW 202416451A TW 111138558 A TW111138558 A TW 111138558A TW 111138558 A TW111138558 A TW 111138558A TW 202416451 A TW202416451 A TW 202416451A
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lead frame
semiconductor device
chip
adapter
package
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TW111138558A
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TWI847300B (zh
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何中雄
李季學
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強茂股份有限公司
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Priority to US18/079,076 priority patent/US20240128185A1/en
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Abstract

一種用於半導體封裝的預成型適配器包含至少一導線架以及與導線架接合的至少一封裝外殼。導線架與封裝外殼各自具有依據半導體裝置之預設封裝外觀提供的預成型外型。

Description

半導體裝置及其預成型適配器和製造方法
本發明是關於一種半導體裝置，特別是關於一種半導體裝置的預成型適配器和製造方法。
半導體封裝技術涉及將晶片容置於包含針腳以及外殼的封裝結構中，甚至進一步以非導電材料包覆晶片以阻隔水氣，以保護晶片不受外界的水氣、灰塵、靜電等影響。所述晶片可為透過切割晶圓獲得其上具有積體電路的獨立晶片。封裝結構的外殼可由塑料、玻璃或者陶瓷製成。
通常，封測廠執行之半導體封裝製程的步驟係先將晶片與導線架接合，爾後在依據產品端（客戶端）的要求形成符合產品需求之封裝外殼。舉例來說，現有的半導體封裝製程通常是將金屬片貼附於暫時性基板上，接著藉由對此金屬片進行蝕刻以製成導線架，爾後依序進行晶片與導線架的接合以及封裝外殼的形成，其中封裝外殼的形成通常是以環氧樹脂包覆晶片與部分導線架。
然而，由於同一種晶片可能用於不同型號與規格的終端產品，因此當面臨終端產品的型號與規格眾多的情況時，上述半導體封裝製程的變更彈性明顯不足。舉例來說，一種晶片目前被產品端使用於車用電子產品，因此封測廠的生產線係將此晶片封裝至用於前述車用電子產品的封裝結構內。然而，若產品端要求將此晶片使用於手機用電子產品，則封測廠可能為此必需建立另一條生產線，從而導致生產成本高昂。
鑒於上述問題，本發明提供一種預成型適配器、包含其半導體裝置和半導體裝置之製造方法，藉此解決面臨終端產品的型號眾多時現有半導體封裝製程的變更彈性不足的問題。
本發明所揭露之用於半導體封裝的預成型適配器包含至少一導線架以及與導線架接合的至少一封裝外殼。導線架與封裝外殼各自具有依據半導體裝置之預設封裝外觀提供的預成型外型。
本發明所揭露之半導體裝置包含預成型適配器以及晶片。預成型適配器包含導線架以及與導線架接合的封裝外殼，且導線架與封裝外殼各自具有依據半導體裝置之預設封裝外觀提供的預成型外型。晶片設置於預成型適配器，且晶片與導線架電連接。
本發明所揭露之半導體裝置的製造方法包含：藉由預成型製程提供預成型適配器，其中預成型適配器包含至少一導線架以及與導線架接合的至少一封裝外殼，且導線架與封裝外殼各自具有依據半導體裝置之預設封裝外觀提供的預成型外型；以及於預成型製程完成之後，設置晶片於預成型適配器，其中晶片與導線架電連接。
根據本發明揭露之預成型適配器、半導體裝置及其製造方法，預成型適配器的導線架和封裝外殼各自具有依據半導體裝置之預設封裝外觀提供的預成型外型。在封裝結構被預成型後，晶片才會被封裝至封裝外殼內而得到半導體裝置。藉此，能夠視產品端（客戶端）需求提供外型適合的預成型適配器之後再封裝晶片，有助於降低製造成本。舉例來說，若產品端要求將同一種晶片用於製造另一種型號的半導體裝置，封測廠只需要在原有生產線上替換預成型適配器，而不需要開設另一條生產線專門生產所述另一種型號的半導體裝置。
以上關於本發明內容之說明及以下實施方式之說明係用以示範與解釋本發明之原理，並提供本發明之專利申請範圍更進一步之解釋。
於以下實施方式中詳細敘述本發明之詳細特徵及優點，其內容足以使任何熟習相關技藝者瞭解本發明之技術內容並據以實施，且根據本說明書所揭露的內容、申請專利範圍及圖式，任何熟習相關技藝者可輕易理解本發明。以下實施例係進一步詳細說明本發明之觀點，但非以任何觀點限制本發明之範疇。
請參照圖1，為根據本發明第一實施例之半導體裝置的示意圖。在本實施例中，半導體裝置1包含預成型適配器10、晶片20以及底部填充劑30。
預成型適配器10包含導線架110以及與導線架接合的封裝外殼120。導線架110與封裝外殼120各自具有依據半導體裝置1之預設封裝外觀提供的預成型外型。詳細來說，在將晶片封裝至預成型適配器10內之前，導線架110與封裝外殼120已經依據產品端提供的產品外觀被預成型。在本實施例中，產品端提供的半導體裝置1之外觀具有彎折的針腳（Pin），因此導線架110的預成型外型包含至少一彎折部111。此外，產品端提供的半導體裝置1之外觀具有特定厚度的封裝外殼120以容納晶片20和底部填充劑30，因此封裝外殼120的預成型外型包含尺寸足以容納晶片20的容置腔121。關於製造預成型適配器10的方法將於後續進一步說明。
晶片20設置於預成型適配器10，且晶片20與導線架110電連接。詳細來說，晶片20可以是裸晶粒或是藉由晶片級封裝（Chip Scale Package，CSP）技術製作出的電子元件。圖1示例性繪製藉由晶片級封裝製作出的電子元件作為晶片20，其可以包含半導體層210（又可稱作裸晶粒）、導線重配層220、錫球230以及晶粒保護層240，且半導體層210介於導線重配層220與晶粒保護層240之間。導線架110的預成型外型包含對應晶片20之電連接點的焊接圖案112。具體來說，在晶片20係由晶片級封裝製成的情況中，於晶片被封裝至預成型適配器10內之前，導線架110已經依據晶片20之錫球230（即電連接點）的分布而被裁切成特定的外型，其中導線架110貫穿封裝外殼120，並且導線架110其中一端於容置腔121內暴露於外而形成對應錫球230之分布的焊接圖案112。在本實施例中，晶片級封裝技術可採用晶圓級封裝（Wafer Level Packaging）來實現。此外，本實施例以錫球作為電連接點的示例，然而在其他實施例中的電連接點可以是用於打線接合之接墊。
底部填充劑30可為環氧樹脂，其容置於封裝外殼120的容置腔121內。底部填充劑30包覆晶片20的錫球230（即電連接點）且未包覆裸晶粒（即半導體層）。底部填充劑30有助於提高晶片20與導線架110之間連接的機械強度，確保晶片20滿足機械衝擊要求。
以下說明半導體裝置1的製造方法。請一併參照圖2至圖7，為圖1之半導體裝置的製造方法的流程示意圖。首先，係藉由預成型製程提供預成型適配器10。
所述預成型製程包含依據半導體裝置1之預設封裝外觀提供具有預成型外型的導線架110。如圖2所示，金屬結構（例如具有孔洞的金屬片）可被預先切割而形成獨立的多個導線架110，並且每個導線架110被彎折而得到末端適合作為針腳的預成型外型。此外，每個導線架110的預成型外型還包含焊接圖案112，其對應晶片上的錫球之分布，並且所述焊接圖案112的形成可透過沖壓製程或蝕刻製程實現。
預成型製程進一步包含藉由注塑成型製程於導線架110形成具有預成型外型的封裝外殼120。如圖2和圖3所示，導線架110被置於上模具2和下模具3之間。上模具2和下模具3壓合，並且熱固性介電材料被灌入模具內，從而形成單件式的注塑件4。於注塑成型製程完成之後，脫模以獲得預成型適配器10。注塑件4在隨後的步驟可被切割以獲得多個封裝外殼120，並且注塑件4包含用以容納晶片的多個容置腔121。
接著，將晶片20設置於預成型適配器10。如圖4所示，於預成型製程完成之後，多個晶片20分別置入這些容置腔121中。各個晶片20的錫球230與焊接圖案112接合，從而使得晶片20與導線架110電連接。錫球230與焊接圖案112的接合可以採用回流焊接（Reflow）來實現。
如圖5所示，液態的底部填充劑30被填入注塑件4的各個容置腔121中。底部填充劑30冷卻凝固而包覆晶片20的導線重配層220與錫球230，並且晶片20的半導體層210和晶粒保護層240未被底部填充劑30包覆而顯露於外。顯露在外的半導體層210有助於散熱。
如圖6所示，可選擇性地以雷射刻印（Laser Marking）形成標記在注塑件4上或是晶片20的晶粒保護層上。所述的標記可以表示半導體裝置1的產品資訊，例如產品型號。此外，還可選擇性地於導線架110的表面電鍍錫以增加導電度，且此電鍍錫的製程可接續在導線架110的預成型製程之後或是接續在底部填充劑30的填充之後。
如圖7所示，藉由切割製程將注塑件4切割成獨立的多個封裝外殼120。各個封裝外殼120具有容置腔121，並且這些封裝外殼120分別與這些導線架110接合。透過圖2至圖7的製造方法可生產出包含導線架110、封裝外殼120以及晶片20的半導體裝置1。此外，所述切割製程只切割注塑件4而不切割導線架110，藉此避免導線架110的末端有金屬毛邊，進而能確保將半導體裝置1與其他電子零組件組裝時，導線架110不會刮傷其他電子零組件。導線架110的外表面可具有注塑痕。
圖1示例性繪出將晶片20封裝以得到特定產品型號的半導體裝置1，其例如但不限於是用於伺服器、車載裝置或高階智慧型手機等電子裝置。然而，晶片20也可應用於製造其他產品型號的半導體裝置。根據本發明揭露的內容，若產品端需求的是包含封裝晶片20的具有第一產品型號之半導體裝置1時，可依據第一產品型號的外觀確定導線架110與封裝外殼120的外型，並且在晶片20的封裝之前就先將導線架110與封裝外殼120預成型。若產品端需求的是包含封裝晶片20之具有不同於第一產品型號的第二產品型號之半導體裝置時，可在晶片20的封裝之前先依據第二產品型號的外觀將導線架與封裝外殼預成型。
包含封裝晶片20的另一半導體裝置之例子請參照圖8，為根據本發明第二實施例之半導體裝置的示意圖。在本實施例中，半導體裝置1a包含預成型適配器10a、晶片20以及介電材料40。半導體裝置1a例如但不限於是用於伺服器、車載裝置或高階智慧型手機等電子裝置，其外型可不同於圖1中的半導體裝置1。
預成型適配器10a包含導線架110a以及與導線架接合的封裝外殼120a。導線架110a與封裝外殼120a各自具有依據半導體裝置1a之預設封裝外觀提供的預成型外型。關於製造預成型適配器10a的方法將於後續進一步說明。
晶片20設置於預成型適配器10a，且晶片20與導線架110a電連接。關於晶片20的構造可參照與第一實施例有關的描述，此處不再贅述。介電材料40可為聚合物，其容置於封裝外殼120a的容置腔121a內並且包覆晶片20。介電材料40可改善半導體裝置1a的電磁相容性（EMC）。
圖9至圖14為圖8之半導體裝置的製造方法的流程示意圖。首先，係藉由預成型製程提供預成型適配器10a。
所述預成型製程包含依據半導體裝置1a之預設封裝外觀提供具有預成型外型的導線架110a。如圖9所示，單件式的金屬件5被彎折，並且此金屬件5可於後續被切割而獲得具有適合作為針腳之預成型外型的多個導線架110a。此外，金屬件5的預成型外型還包含焊接圖案112a，其對應晶片上的錫球之分布。
預成型製程進一步包含藉由注塑成型製程於金屬件5形成具有預成型外型的封裝外殼120a。如圖9和圖10所示，金屬件5被置於上模具2和下模具3之間。上模具2和下模具3壓合，並且熱固性介電材料被灌入模具內，從而形成多個獨立的封裝外殼120a。每個封裝外殼120a的外表面可具有注塑痕。於注塑成型製程完成之後，脫模以獲得預成型適配器10a。各個封裝外殼120a包含用以容納晶片的容置腔121a。
接著，將晶片20設置於預成型適配器10a。如圖11所示，於預成型製程完成之後，多個晶片20分別置入這些容置腔121a中。各個晶片20的錫球230與焊接圖案112a接合。錫球230與焊接圖案112a的接合可以採用回流焊接來實現。
如圖12所示，液態的介電材料40被填入封裝外殼120a的容置腔121a中。介電材料40固化並且包覆晶片20的半導體層210、導線重配層220與錫球230。
如圖13所示，可選擇性地以雷射刻印形成標記在各個封裝外殼120a上或是介電材料40上。所述的標記可以表示半導體裝置1a的產品資訊，例如產品型號。此外，還可選擇性地於金屬件5的表面電鍍錫以增加導電度。
如圖14所示，藉由切割製程將金屬件5切割成獨立的多個導線架110a，並且這些封裝外殼120a分別與這些導線架110a接合。透過圖9至圖14的製造方法可生產出包含導線架110a、封裝外殼120a以及晶片20的半導體裝置1a。此外，所述切割製程只切割金屬件5而不切割封裝外殼120a。
包含封裝晶片20的又另一半導體裝置之例子請參照圖15，為根據本發明第三實施例之半導體裝置的示意圖。在本實施例中，半導體裝置1b包含預成型適配器10b、晶片20以及介電材料40。半導體裝置1b例如但不限於是用於伺服器、車載裝置或高階智慧型手機等裝置，其外型可不同於圖1和圖8中的半導體裝置。
預成型適配器10b包含導線架110b以及與導線架接合的封裝外殼120b。晶片20設置於預成型適配器10b，且晶片20與導線架110b電連接。關於晶片20的構造可參照與第一實施例有關的描述，此處不再贅述。介電材料40可為聚合物，其容置於封裝外殼120b的容置腔121b內並且包覆晶片20。
圖16至圖21為圖15之半導體裝置的製造方法的流程示意圖。首先，係藉由預成型製程提供預成型適配器10a。
所述預成型製程包含依據半導體裝置1b之預設封裝外觀提供具有預成型外型的導線架110b。如圖16所示，單件式的金屬件5被彎折，並且此金屬件5可於後續被切割而獲得具有適合作為針腳之預成型外型的多個導線架110b。此外，金屬件5的預成型外型還包含焊接圖案112b，其對應晶片上的錫球之分布。
預成型製程進一步包含藉由注塑成型製程於金屬件5形成具有預成型外型的封裝外殼120b。如圖16和圖17所示，金屬件5被置於上模具2和下模具3之間。上模具2和下模具3壓合，並且熱固性介電材料被灌入模具內，從而形成多個獨立的封裝外殼120b。每個封裝外殼120b的外表面可具有注塑痕。於注塑成型製程完成之後，脫模以獲得預成型適配器10b。各個封裝外殼120b包含用以容納晶片的容置腔121b。
接著，將晶片20設置於預成型適配器10b。如圖18所示，於預成型製程完成之後，多個晶片20分別置入這些容置腔121b中。各個晶片20的錫球230與焊接圖案112b接合。
如圖19所示，液態的介電材料40被填入封裝外殼120a的容置腔121a中。介電材料40固化而包覆晶片20的半導體層210、導線重配層220與錫球230。可選擇性地以後熟化（Post-mold cure）製程處理容置腔121a中的介電材料40。
如圖20所示，可選擇性地以雷射刻印形成標記在各個封裝外殼120b上或是介電材料40上。所述的標記可以表示半導體裝置1b的產品資訊，例如產品型號。此外，還可選擇性地於金屬件5的表面電鍍錫以增加導電度。
如圖21所示，藉由切割製程將金屬件5切割成獨立的多個導線架110b，並且這些封裝外殼120b分別與這些導線架110b接合。透過圖16至圖21的製造方法可生產出包含導線架110b、封裝外殼120b以及晶片20的半導體裝置1b。此外，所述切割製程只切割金屬件5而不切割封裝外殼120b。
包含封裝晶片20的再另一的半導體裝置之例子請參照圖22，為根據本發明第四實施例之半導體裝置的示意圖。在本實施例中，半導體裝置1c包含預成型適配器10c、晶片20以及介電材料40。半導體裝置1c例如但不限於是用於伺服器、車載裝置或高階智慧型手機等電子裝置，其外型可不同於圖1、圖8和圖15中的半導體裝置。
預成型適配器10c包含導線架110c以及與導線架接合的封裝外殼120c。晶片20設置於預成型適配器10c，且晶片20與導線架110c電連接。相較於圖1、圖8和圖15中的導線架，本實施例的導線架110c可不具有彎折部而為平貼型針腳。關於晶片20的構造可參照與第一實施例有關的描述，此處不再贅述。介電材料40可為聚合物，其設置於封裝外殼120c的其中一表面上並且包覆晶片20的導線重配層220以及錫球230。
圖23至圖28為圖22之半導體裝置的製造方法的流程示意圖。首先，係藉由預成型製程提供預成型適配器10c。
所述預成型製程包含依據半導體裝置1c之預設封裝外觀提供具有預成型外型的導線架110c。如圖23所示，金屬結構（例如具有孔洞的金屬片）可被預先切割而形成獨立的多個導線架110c。導線架110c具有平坦的上下表面，並且每個導線架110c的預成型外型包含焊接圖案112c，其對應晶片上的錫球之分布。
預成型製程進一步包含藉由注塑成型製程於導線架110c形成具有預成型外型的封裝外殼120c。如圖23和圖24所示，導線架110c被置於上模具2和下模具3之間。上模具2和下模具3壓合，並且熱固性介電材料被灌入模具內，從而形成單件式的注塑件4。於注塑成型製程完成之後，脫模以獲得預成型適配器10c。注塑件4在隨後的步驟可被切割以獲得多個封裝外殼120c，並且注塑件4包含用以容納晶片的多個容置腔121c。
接著，將晶片20設置於預成型適配器10c。如圖25所示，於預成型製程完成之後，多個晶片20分別置入這些容置腔121c中。各個晶片20的錫球230與焊接圖案112c接合，從而使得晶片20與導線架110c電連接。
如圖26所示，液態的介電材料40被填入封裝外殼120c的容置腔121c中。介電材料40固化而包覆晶片20的導線重配層220以及錫球230，並且顯露至少一部份的半導體層210。可選擇性地以後熟化（Post-mold cure）製程處理容置腔121c中的介電材料40。
如圖27所示，可選擇性地以雷射刻印形成標記在注塑件4上或是介電材料40上。所述的標記可以表示半導體裝置1c的產品資訊，例如產品型號。再者，還可選擇性地於金屬件5的表面電鍍錫以增加導電度。
如圖28所示，藉由切割製程將注塑件4切割成獨立的多個封裝外殼120c，並且這些封裝外殼120c分別與這些導線架110c接合。透過圖23至圖28的製造方法可生產出包含導線架110c、封裝外殼120c以及晶片20的半導體裝置1c。此外，所述切割製程只切割注塑件4而不切割導線架110c。
於上述各實施例中，容置腔121、121a、121b、121c中設置有單個晶片20，但本發明不以此為限。於其他實施例中，依產品端之需求，各封裝外殼的容置腔中也可設置多個晶片20。
綜上所述，本發明揭露之半導體裝置的製造方法包含預成型製程提供預成型適配器的步驟。進一步來說，預成型適配器的導線架和封裝外殼各自具有依據半導體裝置之預設封裝外觀提供的預成型外型。在封裝結構被預成型後，晶片才會被封裝至封裝外殼內而得到半導體裝置。藉此，能夠視產品端（客戶端）需求提供外型適合的預成型適配器之後再封裝晶片，有助於降低製造成本。舉例來說，若產品端要求將同一種晶片用於製造另一種型號與規格的半導體裝置，封測廠只需要在原有生產線上替換預成型適配器，而不需要開設另一條生產線專門生產所述另一種型號與規格的半導體裝置。
此外，由於封裝結構的導線架可先被預成型成適合當作針腳的外型，在後續的切割製程只需要切割封裝外殼而不會切割導線架，有助於避免導線架的末端有金屬毛邊，進而能確保將半導體裝置與其他電子零組件組裝時，導線架不會刮傷其他電子零組件。
本發明之實施例揭露雖如上所述，然並非用以限定本發明，任何熟習相關技藝者，在不脫離本發明之精神和範圍內，舉凡依本發明申請範圍所述之形狀、構造、特徵及精神當可做些許之變更，因此本發明之專利保護範圍須視本說明書所附之申請專利範圍所界定者為準。
1、1a、1b、1c:半導體裝置 2:上模具 3:下模具 4:注塑件 5:金屬件 10、10a、10b、10c:預成型適配器 110、110a、110b、110c:導線架 111:彎折部 112、112a、112b、112c:焊接圖案 120、120a、120b、120c:封裝外殼 121、121a、121b、121c:容置腔 122:斜面段 123:底面 20:晶片 210:半導體層 220:導線重配層 230:錫球 240:晶粒保護層 30:底部填充劑 40:介電材料
圖1為根據本發明第一實施例之半導體裝置的示意圖。 圖2至圖7為圖1之半導體裝置的製造方法的流程示意圖。 圖8為根據本發明第二實施例之半導體裝置的示意圖。 圖9至圖14為圖8之半導體裝置的製造方法的流程示意圖。 圖15為根據本發明第三實施例之半導體裝置的示意圖。 圖16至圖21為圖15之半導體裝置的製造方法的流程示意圖。 圖22為根據本發明第四實施例之半導體裝置的示意圖。 圖23至圖28為圖22之半導體裝置的製造方法的流程示意圖。
2:上模具
3:下模具
4:注塑件
110:導線架
121:容置腔

Claims (10)

  1. 一種用於半導體封裝的預成型適配器，包含至少一導線架以及與該至少一導線架接合的至少一封裝外殼，且該至少一導線架與該至少一封裝外殼各自具有依據一半導體裝置之預設封裝外觀提供的一預成型外型。
  2. 如請求項1所述之預成型適配器，其中該至少一導線架的數量為多個且各自獨立，該至少一封裝外殼為單件式的一注塑件。
  3. 如請求項1所述之預成型適配器，其中該封裝外殼的數量為多個且各自獨立，且該至少一導線架為單件式的一金屬件。
  4. 如請求項1所述之預成型適配器，其中該至少一封裝外殼包含一晶片容置腔。
  5. 一種半導體裝置，包含：一預成型適配器，包含一導線架以及與該導線架接合的一封裝外殼，且該導線架與該封裝外殼各自具有依據一半導體裝置之預設封裝外觀提供的一預成型外型；以及一晶片，設置於該預成型適配器，且該晶片與該導線架電連接。
  6. 如請求項5所述之半導體裝置，其中該導線架的該預成型外型包含至少一彎折部。
  7. 如請求項5所述之半導體裝置，其中該導線架的該預成型外型包含對應該晶片之至少一電連接點的一焊接圖案。
  8. 一種半導體裝置的製造方法，包含：藉由一預成型製程提供一預成型適配器，其中該預成型適配器包含至少一導線架以及與該至少一導線架接合的至少一封裝外殼，且該至少一導線架與該至少一封裝外殼各自具有依據一半導體裝置之預設封裝外觀提供的一預成型外型；以及於該預成型製程完成之後，設置一晶片於該預成型適配器，其中該晶片與該至少一導線架電連接。
  9. 如請求項8所述之半導體裝置的製造方法，其中該至少一導線架的數量為多個且各自獨立，該預成型製程包含：依據該半導體裝置之預設封裝外觀提供具有該預成型外型的該些導線架；以及藉由一注塑成型製程於該些導線架形成單件式的一注塑件，且該注塑件包含具有該預成型外型的該至少一封裝外殼。
  10. 如請求項9所述之半導體裝置的製造方法，其中該至少一封裝外殼的數量為多個，該方法更包含：於該注塑成型製程完成之後，藉由一切割製程將該注塑件切割而形成獨立的該些封裝外殼，其中該些封裝外殼分別與該些導線架接合，且該切割製程不切割該些導線架。
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