TW202403179A - 真空排氣系統、真空泵及真空泵之清潔方法 - Google Patents
真空排氣系統、真空泵及真空泵之清潔方法 Download PDFInfo
- Publication number
- TW202403179A TW202403179A TW112110563A TW112110563A TW202403179A TW 202403179 A TW202403179 A TW 202403179A TW 112110563 A TW112110563 A TW 112110563A TW 112110563 A TW112110563 A TW 112110563A TW 202403179 A TW202403179 A TW 202403179A
- Authority
- TW
- Taiwan
- Prior art keywords
- gas
- pump
- vacuum pump
- temperature
- flow path
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 44
- 238000004140 cleaning Methods 0.000 title claims abstract description 24
- 239000007789 gas Substances 0.000 claims abstract description 263
- 239000011261 inert gas Substances 0.000 claims abstract description 78
- 239000011538 cleaning material Substances 0.000 claims abstract description 46
- 230000008569 process Effects 0.000 claims abstract description 26
- 239000000428 dust Substances 0.000 claims abstract description 9
- 238000007789 sealing Methods 0.000 claims description 51
- 238000012545 processing Methods 0.000 claims description 28
- 238000006073 displacement reaction Methods 0.000 claims description 5
- 238000011084 recovery Methods 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 26
- 239000000463 material Substances 0.000 description 19
- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical compound FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 description 14
- 235000012239 silicon dioxide Nutrition 0.000 description 13
- 239000000377 silicon dioxide Substances 0.000 description 13
- 238000012423 maintenance Methods 0.000 description 11
- 229910052681 coesite Inorganic materials 0.000 description 10
- 229910052906 cristobalite Inorganic materials 0.000 description 10
- 239000013049 sediment Substances 0.000 description 10
- 229910052682 stishovite Inorganic materials 0.000 description 10
- 229910052905 tridymite Inorganic materials 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 8
- 229910004014 SiF4 Inorganic materials 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 7
- 238000001784 detoxification Methods 0.000 description 6
- 239000000470 constituent Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 230000002159 abnormal effect Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000008030 elimination Effects 0.000 description 3
- 238000003379 elimination reaction Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 241000607479 Yersinia pestis Species 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 2
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 2
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- JOHWNGGYGAVMGU-UHFFFAOYSA-N trifluorochlorine Chemical compound FCl(F)F JOHWNGGYGAVMGU-UHFFFAOYSA-N 0.000 description 2
- 229910020323 ClF3 Inorganic materials 0.000 description 1
- 101100441092 Danio rerio crlf3 gene Proteins 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- -1 that is Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
- F04B—POSITIVE-DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS
- F04B37/00—Pumps having pertinent characteristics not provided for in, or of interest apart from, groups F04B25/00 - F04B35/00
- F04B37/10—Pumps having pertinent characteristics not provided for in, or of interest apart from, groups F04B25/00 - F04B35/00 for special use
- F04B37/14—Pumps having pertinent characteristics not provided for in, or of interest apart from, groups F04B25/00 - F04B35/00 for special use to obtain high vacuum
- F04B37/16—Means for nullifying unswept space
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
- F04C—ROTARY-PISTON, OR OSCILLATING-PISTON, POSITIVE-DISPLACEMENT MACHINES FOR LIQUIDS; ROTARY-PISTON, OR OSCILLATING-PISTON, POSITIVE-DISPLACEMENT PUMPS
- F04C25/00—Adaptations of pumps for special use of pumps for elastic fluids
- F04C25/02—Adaptations of pumps for special use of pumps for elastic fluids for producing high vacuum
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2015—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate the substrate being of crystalline semiconductor material, e.g. lattice adaptation, heteroepitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Non-Positive Displacement Air Blowers (AREA)
- Compressors, Vaccum Pumps And Other Relevant Systems (AREA)
- Applications Or Details Of Rotary Compressors (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022-050931 | 2022-03-25 | ||
| JP2022050931A JP2023143517A (ja) | 2022-03-25 | 2022-03-25 | 真空排気システム、真空ポンプ及び真空ポンプのクリーニング方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW202403179A true TW202403179A (zh) | 2024-01-16 |
Family
ID=82802514
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW112110563A TW202403179A (zh) | 2022-03-25 | 2023-03-22 | 真空排氣系統、真空泵及真空泵之清潔方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2023143517A (ja) |
| GB (1) | GB202209802D0 (ja) |
| TW (1) | TW202403179A (ja) |
| WO (1) | WO2023182489A1 (ja) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3550465B2 (ja) * | 1996-08-30 | 2004-08-04 | 株式会社日立製作所 | ターボ真空ポンプ及びその運転方法 |
| JP5190214B2 (ja) * | 2007-03-29 | 2013-04-24 | 東京エレクトロン株式会社 | ターボ分子ポンプ、基板処理装置、及びターボ分子ポンプの堆積物付着抑制方法 |
| JP6418838B2 (ja) * | 2014-07-31 | 2018-11-07 | エドワーズ株式会社 | ドライポンプ及び排ガス処理方法 |
| JP2017089462A (ja) * | 2015-11-06 | 2017-05-25 | エドワーズ株式会社 | 真空ポンプの判断システム、および真空ポンプ |
-
2022
- 2022-03-25 JP JP2022050931A patent/JP2023143517A/ja active Pending
- 2022-07-04 GB GBGB2209802.4A patent/GB202209802D0/en not_active Ceased
-
2023
- 2023-03-22 TW TW112110563A patent/TW202403179A/zh unknown
- 2023-03-24 WO PCT/JP2023/011783 patent/WO2023182489A1/ja unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023182489A1 (ja) | 2023-09-28 |
| GB202209802D0 (en) | 2022-08-17 |
| JP2023143517A (ja) | 2023-10-06 |
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