TW202349525A - Method for detecting die fixing state by air flow - Google Patents

Abstract

A method for detecting die fixing state by air flow includes the following steps: forming a bond wave when a local area of the die is separated from a die fixing device and is in contact with a substrate; spreading the bond wave from the local area of the die to other area of the die and having a spread tendency so that the die is gradually separated from the die fixing device and fixed on the substrate; flowing an air flow along a surface of the die; detecting a flow rate change degree or a pressure change degree of the air flow from different positions and obtaining a plurality of detecting signals; determining a distance change degree between the die and the die fixing device according to the detecting signals; determining the spread tendency of the bond wave according to the distance change degree between the die and the die fixing device; and determining if the die is fixed on the substrate tight or not according to the spread tendency of the bond wave.

Description

Method of detecting solid crystal state using air flow

The present invention relates to a method of solid crystal, in particular to a method of detecting the state of solid crystal by using air flow.

Integrated circuits are manufactured on semiconductor wafers in a mass manner and through multiple processes, and the wafers are further divided into a plurality of dies. In other words, a die is a small unpackaged integrated circuit body made of semiconductor materials. The divided plurality of die are neatly attached to a carrier device, and then a carrier frame is responsible for transporting the carrier device. Then the die bonding device sequentially transfers the die to the substrate for subsequent processing.

Furthermore, during the process of transferring the die to the substrate, local areas of the die break away from the die bonding device and contact the substrate to form a bond wave. The bonding wave spreads from a local area of the die to other areas of the die, causing the die to gradually separate from the die-bonding device and be fixed on the substrate.

However, the bottom surface of the die and the top surface of the substrate may enclose air bubbles to form a void, or some particles may adhere to the bottom surface of the die, resulting in the bottom surface of the die not being in close contact with the top surface of the substrate. . Once the die is not closely adhered to the substrate, subsequent processing procedures such as sorting or identification of the die will be easily affected by bubbles or particles, reducing the yield of subsequent processed products. The industry will usually process the die that is not closely adhered to the substrate. The combined grains are picked out.

However, there are a large number of crystal grains on the substrate and the size of the crystal grains is very small, so it is difficult to accurately identify which crystal grains are closely adhered to the substrate and which crystal grains are not closely adhered to the substrate. Therefore, there is basically no way for the industry to pick out the dies that are not in close contact with the substrate.

The main purpose of the present invention is to provide a method for detecting the state of solid crystals using airflow, which can accurately identify whether the crystal grains are in close contact with the substrate.

In order to achieve the aforementioned goals, the present invention provides a method for detecting the state of die-bonding using airflow, which includes the following steps: a local area of a die breaks away from a die-bonding device and contacts a substrate to form a bonding wave; the bonding wave starts from Local areas of the die diffuse in the direction of other areas of the die and have a diffusion tendency, causing the die to gradually break away from the die-bonding device and be fixed on the substrate; an airflow flows along the surface of the die; different positions are sensed The flow rate or pressure change degree of the air flow is obtained and a plurality of sensing information is obtained; the degree of change in the distance between the die and the die-bonding device is determined based on the sensing information; the bonding wave is determined based on the change in the distance between the die and the die-bonding device. The diffusion trend of the bonding wave; and judging whether the crystal grain is closely adhered to the substrate based on the diffusion trend of the bonding wave.

In some embodiments, the step of forming a bonding wave further includes: the die-bonding device uses a positive pressure to generate airflow to blow local areas of the die, so that the local areas of the die break away from the die-bonding device and flex and deform to contact. The substrate; and wherein the step of flowing the airflow along the surface of the die further includes: the airflow generated by the positive pressure turns and flows along the surface of the die after contacting the surface of the die.

In some embodiments, the step of flowing the air flow along the surface of the die further includes: flowing the air flow along the surface of the die in a gap between the die bonding device and the die, and then the air flow enters a plurality of channels of the die bonding device. ; And wherein, the step of sensing the flow rate or pressure change degree of the airflow at different positions further includes: a plurality of sensors respectively sensing the flow rate or pressure change degree of the airflow passing through the channels, and obtaining a plurality of sensing information.

In some embodiments, the step of flowing the air flow along the surface of the die further includes: a vacuum device guiding the air flow through the channels through a negative pressure.

In some embodiments, the adsorption force generated by the negative pressure is insufficient to adsorb the grains.

In some embodiments, the vacuum device is disposed on the top of the die-bonding device. The vacuum device has an air extraction hole, a chamber and a plurality of perforations. The air extraction hole is connected to the chamber. The perforations are connected to the chamber. The perforations are connected to the cavity. The channels are connected, and the sensors are arranged in the through holes and do not block the openings of the channels.

In some embodiments, the sensors are respectively disposed outside the openings of the channels and do not block the openings of the channels.

In some embodiments, the step of determining the change degree of the distance between the die and the die-bonding device further includes: a processing unit receiving the sensing information and determining the flow rate or pressure change degree of the airflow at different locations based on the sensing information. , the processing unit further determines the degree of change in the distance between the crystal grain and the die-bonding device based on the flow rate or pressure change of the airflow at different locations; wherein, the step of determining the diffusion trend of the laminating wave further includes: the processing unit determines the degree of change in the distance between the crystal grain and the die-bonding device. The degree of change in the distance of device separation determines the diffusion trend of the bonding wave; and wherein the step of determining whether the die is in close contact with the substrate further includes: the processing unit determines whether the die is in close contact with the substrate based on the diffusion trend of the bonding wave.

The effect of the present invention is that the method of the present invention can use air flow to detect the solid state of the crystal, and accurately identify which crystal grains are closely adhered to the substrate and which crystal grains are not closely adhered to the substrate.

The following is a more detailed description of the embodiments of the present invention with reference to drawings and component symbols, so that those skilled in the art can implement them after reading this specification.

Please refer to FIGS. 1A to 9 . FIGS. 1A and 1B are flow charts of the method of the present invention. FIG. 2A shows a schematic diagram of the die-bonding device 10 and the sensor 80 . FIG. 2B shows the die-bonding device 10 and the sensor. 80 is a top view, Figure 3 shows a schematic diagram of the connection relationship between the air holes 11 to 14, the first vacuum device 30 and the gas supply device 40, Figure 4 shows a schematic diagram of the connection relationship between the sensor 80 and the processing unit 90, Figure 5 and Figure 6 is a schematic diagram of steps S100 to S800 of the first embodiment of the method of the present invention. Figure 7 shows a schematic diagram of the bulge portion 21 of the die 20 affecting the flow rate or pressure change degree of the air flow 61 and the diffusion trend 60 of the laminating wave. , Figure 8 shows a schematic diagram of the diffusion trend 60 of the bonding wave when there are no voids or particles between the die 20 and the substrate 50 , and Figure 9 shows the bonding when there are holes 71 or particles between the die 20 and the substrate 50 Schematic diagram of wave diffusion trend 60. The invention provides a method for detecting solid crystal state using air flow, which includes the following steps:

Step S100 , as shown in FIG. 1A and FIG. 5 , a die bonding device 10 generates an adsorption force to adsorb a die 20 through a negative pressure 31 . More specifically, as shown in FIGS. 2A and 2B , the die-bonding device 10 has four air holes 11 ~ 14 , and the air holes 11 ~ 14 are distributed at the four corners 101 ~ 104 of the die-bonding device 10 ; as shown in Figure 3 As shown in Figure 2B, Figure 3 and Figure 5, the air holes 11~14 are connected to a first vacuum device 30 and a gas supply device 40; as shown in Figure 2B, Figure 3 and Figure 5, the first vacuum device 30 pumps the air holes 11~14 to generate The negative pressure 31 causes the die-bonding device 10 to generate an adsorption force to attract the four corners 101 to 104 of the die 20 , so that the periphery of the die 20 is closely attached to the bottom surface of the die-bonding device 10 . Because the periphery of the die 20 can be closely attached to the periphery of the bottom surface of the die-bonding device 10, there is no gap between the periphery of the die 20 and the periphery of the bottom surface of the die-bonding device 10, preventing external air from entering and affecting the negative pressure 31 The adsorption force is generated to adsorb the crystal grains 20 .

Step S200, as shown in FIGS. 1A, 6 and 7, the die bonding device 10 uses a positive pressure 41 to generate an airflow 61 to blow the local area of the die 20, so that the local area of the die 20 is separated from the die die 20. 10 and is flexed and deformed to contact a substrate 50. After a local area of the die 20 contacts the substrate 50, a bond wave is formed. Step S200 of the first embodiment can be further divided into the following two implementation modes.

Regarding the first embodiment, a local area of the die 20 is a corner of the die 20 , and the die bonding device 10 generates an airflow 61 through the positive pressure 41 to blow the corner of the die 20 , so that the corner of the die 20 is separated from the die. The device 10 is flexed and deformed to contact the substrate 50. After the corners of the die 20 contact the substrate 50, a bonding wave is formed. To be more specific, the first vacuum device 30 stops pumping the air holes 11 at the corners 101 of the die bonding device 10, and the air holes 11 stop using the negative pressure 31 to generate adsorption force to adsorb the corners of the die 20, and at the same time, the gas supply device 40 starts Air is blown into the air holes 11 in the corners 101 of the die bonding device 10 to generate positive pressure 41 , and the air holes 11 begin to generate airflow 61 by the positive pressure 41 to blow the corners of the die 20 . The first vacuum device 30 continues to evacuate the air holes 12 ~ 14 in other corners 102 ~ 104 of the die bonding device 10 , so that the air holes 12 ~ 14 in other corners 102 ~ 104 of the die bonding device 10 are still generated by the negative pressure 31 The adsorption force adsorbs other corners of the crystal grain 20 . Thereby, the die 20 can not only remain fixed to the die-bonding device 10 , but also ensure that only the corners of the entire die 20 are deflected and deformed most prominently, so that the corners of the die 20 can contact the substrate 50 in a point contact manner. Because the corners of the die 20 contact the substrate 50 in a point contact manner, a bonding force will be generated at the corners of the die 20 and its vicinity, and this bonding force will further form a bonding wave. To be more specific, the first vacuum device 30 sequentially stops pumping air from the air holes 12 ~ 14 in other corners 102 ~ 104 of the die bonding device 10 , and the air holes 12 ~ 14 sequentially stop providing negative pressure along the diagonal direction. 31. The gas supply device 40 sequentially begins to blow air to the air holes 12 to 14 in other corners 102 to 104 of the die bonding device 10. The air holes 12 to 14 sequentially begin to provide positive pressure 41 along the diagonal direction to generate air flow 61. Blow other corners of the die 20 so that the other corners of the die 20 are sequentially blown by the airflow 61 along the diagonal direction to generate a pressure difference fluctuation. The pressure difference fluctuation can further allow the corners of the die 20 to contact the substrate. After 50, a fitting wave forms.

Regarding the second embodiment, a local area of the die 20 is one side of the die 20 , and the die bonding device 10 generates an airflow 61 by the positive pressure 41 to blow the side of the die 20 , so that the side of the die 20 After being detached from the die bonding device 10 and flexing and deforming to contact the substrate 50, the side edges of the die 20 contact the substrate 50 to form a bonding wave. To be more specific, the first vacuum device 30 stops pumping the pores 11 and 12 at the two corners 101 and 102 of the side 15 of the crystal bonding device 10 , and the pores 11 and 12 stop generating adsorption force to absorb the crystal through the negative pressure 31 At the two corners of the side of the die 20, at the same time, the gas supply device 40 begins to blow air into the air holes 11 and 12 at the two corners 101 and 102 of the side 15 of the die bonding device 10 to generate positive pressure 41. The air holes 11 and 12 begin to pass through The positive pressure 41 generates airflow 61 to blow the two corners of the side of the die 20 . The first vacuum device 30 continues to evacuate the pores 13 and 14 at the two corners 103 and 104 of the other side 16 of the die-bonding device 10 so that the pores 13 and 14 still maintain the adsorption force generated by the negative pressure 31 to absorb the crystal grains. 20 on the other side of the second corner. Thereby, the die 20 can not only remain fixed to the die-bonding device 10 , but also ensure that only the side of the entire die 20 is deflected and deformed and is the most protruding, so that the side of the die 20 can contact the substrate 50 in a line contact manner. . Because the side edges of the die 20 contact the substrate 50 in a line contact manner, a bonding force will be generated on the side edges of the die 20 and its vicinity, and this bonding force will further form a bonding wave. To be more specific, the first vacuum device 30 stops pumping the air holes 13 and 14 at the two corners 103 and 104 of the other side 16 of the die bonding device 10, and the air holes 13 and 14 stop providing the negative pressure 31, and the gas supply device 40 begins to blow air into the air holes 13 and 14 at the two corners 103 and 104 of the other side 16 of the die bonding device 10 in sequence, and the air holes 13 and 14 begin to provide positive pressure 41 to generate airflow 61 to blow the other side of the die 20 side, so that the die 20 is sequentially blown by the airflow 61 from one side to the other side to generate a pressure difference fluctuation. The pressure difference fluctuation can further cause the sides of the die 20 to form a bonding wave after contacting the substrate 50 .

Step S300, as shown in FIG. 1A, FIG. 6 and FIG. 7, the bonding wave spreads from the local area of the die 20 to other areas of the die 20 and has a diffusion trend 60, so that the die 20 gradually detaches. The die-bonding device 10 is fixed on the substrate 50 . Step S300 of the first embodiment can be further divided into the following two implementation modes.

Regarding the first embodiment, the pressure difference fluctuation guides the bonding wave to spread along the diagonal direction of the crystal grain 20 . Regarding the second embodiment, the pressure difference fluctuation guides the bonding wave to spread from one side of the die 20 to the other side.

In some embodiments, the number and distribution of the pores may have multiple possibilities. For example, the number of the air holes is six, four of which are distributed at four corners of the crystal bonding device 10 , and the other two air holes are distributed on two opposite sides of the crystal bonding device 10 . For example, the number of the air holes is nine, four of which are distributed at the four corners of the crystal bonding device 10, and the other four air holes are distributed on the four sides of the crystal bonding device 10 and are respectively located between the corners. between. For example, there are only two air holes, and they are distributed at two opposite corners or two opposite sides of the die-bonding device 10 . For example, the crystal bonding device 10 has only one air hole, and the air hole is located at the axis of the crystal bonding device 10 . No matter how the number and distribution of pores change, basically step S200 and step S300 of these embodiments are quite similar, and both can form bonding waves and diffusion bonding waves. The above examples only illustrate the diversity of the number and distribution of pores, and are not intended to limit the scope of the present invention.

In step S400, as shown in FIG. 1A, FIG. 6 and FIG. 7, the air flow 61 flows along the surface of the die 20. Specifically, as shown in FIGS. 2A and 2B , the die-bonding device 10 has a plurality of channels 17 , and these channels 17 are evenly distributed in the die-bonding device 10 ; as shown in FIGS. 6 and 7 , the airflow 61 generated by the positive pressure 41 After contacting the surface of the die 20 , it turns and flows along the surface of the die 20 in a gap 70 between the die bonding device 10 and the die 20 , and then enters the channels 17 of the die bonding device 10 .

Step S500, as shown in FIG. 1A, FIG. 4, FIG. 6 and FIG. 7, senses the flow rate or pressure change degree of the airflow 61 at different positions and obtains plural sensing information 81. Specifically, as shown in FIG. 2A and FIG. 2B , a plurality of sensors 80 are respectively disposed outside the openings of the channels 17 and do not block the openings of the channels 17 to ensure that the channels 17 maintain ventilation. As shown in FIG. 6 , when there are no cavities or particles between the die 20 and the substrate 50 , the gap 70 will gradually become larger along the diffusion trend 60 of the bonding wave. The larger the gap 70 is, the flow rate or pressure of the airflow 61 will change. The greater the degree, so the flow rate change degree of the airflow 61 passing through different channels 17 is F1 F2 F3 F4 F5, the degree of pressure change of the airflow 61 passing through different channels 17 is P1 P2 P3 P4 P5. As shown in FIG. 7 , when bubbles are enclosed between the die 20 and the substrate 50 to form a cavity 71 (void) or some particles (not shown) adhere to the bottom surface of the die 20 , the die 20 will bulge upward. The raised portion 21 of the die 20 blocks or is close to one of the channels 17 so that the air flow 61 cannot enter one of the channels 17, resulting in a change in flow rate or pressure. Therefore, the flow rate of the air flow 61 passing through different channels 17 changes to F1 F3 F4 F5 and F2 0, the degree of pressure change of the airflow 61 passing through different channels 17 is P1 P3 P4 P5 and P2 0. As shown in FIG. 4 , the sensors 80 respectively sense the flow rate or pressure change degree of the airflow 61 passing through the channels 17 and obtain a plurality of sensing messages 81 . Among them, the sensor 80 used to sense the change degree of the flow rate of the air flow 61 is a flow sensor, and the sensor 80 used to sense the change degree of the pressure of the air flow 61 is a pressure sensor.

Step S600 , as shown in FIG. 1A , FIG. 4 , FIG. 6 and FIG. 7 , determines the change degree of the distance between the die 20 and the die-bonding device 10 based on the sensing information 81 . More specifically, the sensors 80 are electrically connected to a processing unit 90 . As shown in FIGS. 4 and 6 , when there are no holes or particles between the die 20 and the substrate 50 , the processing unit 90 receives the sensing messages 81 and determines the airflow 61 passing through the different channels 17 based on the sensing messages 81 The degree of flow change is F1 F2 F3 F4 F5 or the degree of pressure change is P1 P2 P3 P4 P5, the processing unit 90 further determines F1 according to the flow rate change of the airflow 61 passing through the different channels 17 F2 F3 F4 F5 or the degree of pressure change is P1 P2 P3 P4 P5 determines the degree of change in the distance between the die 20 and the die-bonding device 10 . As shown in FIGS. 4 and 7 , when there are cavities 71 or particles between the die 20 and the substrate 50 , the processing unit 90 receives the sensing messages 81 and determines the airflow through different channels 17 based on the sensing messages 81 The degree of flow change of 61 is F1 F3 F4 F5 and F2 0 or the degree of pressure change is P1 P3 P4 P5 and P2 0 determines the degree of change in the distance between the die 20 and the die bonding device 10 .

In step S700 , as shown in FIGS. 1A , 4 , 6 and 7 , the processing unit 90 determines the diffusion trend 60 of the bonding wave 60 based on the change in distance between the die 20 and the die bonding device 10 .

In step S800 , as shown in FIG. 1B , FIG. 4 , and FIGS. 6 to 9 , the processing unit 90 determines whether the die 20 is closely bonded to the substrate 50 according to the diffusion trend 60 of the bonding wave. As shown in FIG. 8 , when there are no holes or particles between the die 20 and the substrate 50 , the diffusion trend 60 of the bonding wave is generally along the diagonal direction D1 of the die 20 or from one side of the die 20 . One side extends toward the other side in the directions D2 and D3, so that it can be determined that the die 20 and the substrate 50 are in close contact with each other. As shown in FIG. 9 , when there are cavities 71 or particles between the die 20 and the substrate 50 , the diffusion trend 60 of the bonding wave is generally along the diagonal direction D1A of the die 20 or from the diagonal direction D1A of the die 20 . The directions D2A and D3A from one side to the other side extend around the raised portion 21 , so it can be determined that the die 20 is not in close contact with the substrate 50 .

FIG. 10 shows a schematic diagram of the die bonding device 10 and the sensor 80 and the second vacuum device 100 . As shown in Figure 10, in terms of structure, the difference between the second embodiment and the first embodiment is that: a second vacuum device 100 is disposed on the top of the die bonding device 10, and the second vacuum device 100 is provided with an air extraction hole 110, an The chamber 120 and a plurality of through holes 130, the air extraction holes 110 are connected to the chamber 120, the through holes 130 are connected to the chamber 120, the through holes 130 are connected to the channels 17, and the sensors 80 are arranged in the through holes 130 middle.

Figure 11 is a schematic diagram of steps S200 to S800 of the second embodiment of the method of the present invention. As shown in FIG. 11 , in terms of method, the difference between the second embodiment and the first embodiment is that step S400 further includes: the second vacuum device 100 guides the airflow 61 through the channels 17 through a negative pressure 140 . Specifically, an air pump (not shown) evacuates the chamber 120 through the air extraction hole 110 to generate a negative pressure 140; the negative pressure 140 can guide the airflow 61 to pass through the channels 17 and the channels 17 with a larger flow rate and pressure. It enters the chamber 120 through the perforation 130, and then is discharged outward through the air extraction hole 110. Because the flow rate and pressure of the air flow 61 passing through the channels 17 are larger, the flow rate or pressure of the air flow 61 measured by the sensors 80 is more significant, which improves the sensing accuracy. Therefore, the processing unit 90 can measure the flow rate and pressure of the air flow 61 according to the flow rate and pressure of the air flow 61 . The sensing information 81 accurately determines the relative relationship between the flow rate or pressure of the airflow 61 passing through different channels 17 . What is important is that the adsorption force generated by the negative pressure 140 is not enough to adsorb the crystal grain 20 , that is to say, in essence, the negative pressure 140 is smaller than the negative pressure 31 to prevent the crystal grain 20 from being adsorbed and fixed by the crystal bonding device 10 again.

To sum up, the method of the present invention can use the airflow 61 to detect the solid state of the crystal, and accurately identify which crystal grains 20 are closely adhered to the substrate 50 and which crystal grains 20 are not closely adhered to the substrate 50 . The industry can perform subsequent processing procedures on the die 20 that are in close contact with the substrate 50 , and sort out the die 20 that are not in close contact with the substrate 50 .

The above are only used to explain the preferred embodiments of the present invention, and are not intended to limit the present invention in any form. Therefore, any modifications or changes related to the present invention are made under the same spirit of the invention. , should still be included in the scope of protection intended by the present invention.

10:Crystal bonding device 101~104: Corner 11~14: stomata 15,16: Side 17:Channel 20:Grain 21: raised part 30: First vacuum device 31: Negative pressure 40:Gas supply device 41: Positive pressure 50:Substrate 60: The diffusion trend of fitting waves 61:Airflow 70:Gap 71: Hollow 80: Sensor 81: Sensing message 90: Processing unit 100: Second vacuum device 110:Exhaust hole 120: Chamber 130:Perforation 140: Negative pressure D1~D3,D1A~D3A: direction F1~F6: Degree of flow change of air flow P1~P6: Degree of pressure change of air flow S100~S800: steps

Figures 1A and 1B are flow charts of the method of the present invention. Figure 2A shows a schematic diagram of the die-bonding device and sensor. Figure 2B shows a top view of the die attach device and sensor. Figure 3 shows a schematic diagram of the connection relationship between the air hole, the first vacuum device and the gas supply device. Figure 4 shows a schematic diagram of the connection relationship between the sensor and the processing unit. Figures 5 and 6 are schematic diagrams of steps S100 to S800 in the first embodiment of the method of the present invention. Figure 7 shows a schematic diagram showing how the bulging portion of the grain affects the flow rate or pressure change of the air flow and the diffusion trend of the bonding wave. Figure 8 shows a schematic diagram of the diffusion trend of the bonding wave when there are no voids or particles between the die and the substrate. Figure 9 shows a schematic diagram of the diffusion trend of the bonding wave when there are voids or particles between the die and the substrate. Figure 10 shows a schematic diagram of the die bonding device, sensor and second vacuum device. Figure 11 is a schematic diagram of steps S200 to S800 of the second embodiment of the method of the present invention.

S100~S700: steps

Claims (8)

A method for detecting solid crystal state using air flow, including the following steps: A local area of a die breaks away from a die-bonding device and contacts a substrate to form a bonding wave; The bonding wave spreads from a local area of the die to other areas of the die and has a diffusion tendency, causing the die to gradually separate from the die-bonding device and be fixed on the substrate; An airflow flows along the surface of the grain; Sensing the flow rate or pressure change degree of the airflow at different locations and obtaining multiple sensing information; Determine the degree of change in the distance between the die and the die-bonding device based on the sensing information; Determine the diffusion trend of the bonding wave based on the change in distance between the die and the die-bonding device; and It is determined based on the diffusion trend of the bonding wave whether the crystal grain is closely bonded with the substrate. The method of using airflow to detect the state of a solid chip as described in claim 1, wherein the step of forming the bonding wave further includes: the solid chip device generates the airflow to blow the local area of the die by a positive pressure, so that The local area of the die breaks away from the die-bonding device and flexes and deforms to contact the substrate; and wherein the step of flowing the airflow along the surface of the die further includes: the airflow generated by the positive pressure contacts the substrate. The surface of the grain then turns and flows along the surface of the grain. The method of using airflow to detect the solid state of the crystal according to claim 2, wherein the step of flowing the airflow along the surface of the crystal grain further includes: the airflow flowing along the surface of the crystal grain between the crystal bonding device and the crystal grain. The airflow flows in a gap between the particles, and then the airflow enters a plurality of channels of the die-bonding device; and wherein, the step of sensing the flow rate or pressure change degree of the airflow at different positions further includes: a plurality of sensors respectively sensing through The flow rate or pressure change degree of the airflow in the channels is obtained, and a plurality of sensing information is obtained. The method of using airflow to detect the state of a solid crystal as described in claim 3, wherein the step of flowing the airflow along the surface of the die further includes: a vacuum device guiding the airflow through the channels through a negative pressure. The method of using airflow to detect the state of a solid crystal as described in claim 4, wherein the adsorption force generated by the negative pressure is insufficient to adsorb the crystal grain. The method of using airflow to detect the state of solid crystal as described in claim 4, wherein the vacuum device is arranged on the top of the solid crystal device, and the vacuum device is provided with an air extraction hole, a chamber and a plurality of perforations, and the air extraction hole is connected with the The chambers are connected, the perforations are connected with the chamber, the perforations are connected with the channels, and the sensors are arranged in the perforations and do not block the openings of the channels. The method of using airflow to detect the state of a solid chip as described in claim 3, wherein the sensors are respectively arranged outside the openings of the channels and do not block the openings of the channels. The method of using airflow to detect the state of a solid die as described in claim 1, wherein the step of determining the change in distance between the die and the die solid device further includes: a processing unit receiving the sensing messages and based on the The sensing information determines the degree of change in flow rate or pressure of the air flow at different locations, and the processing unit further determines the degree of change in the distance between the die and the die-bonding device based on the degree of change in flow rate or pressure of the air flow at different locations; wherein, it is determined that The step of the diffusion trend of the bonding wave further includes: the processing unit determines the diffusion trend of the bonding wave based on the change in distance between the die and the die-bonding device; and wherein, determining whether the die is closely connected to the substrate The step of bonding further includes: the processing unit determines whether the die is closely bonded to the substrate based on the diffusion trend of the bonding wave.

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