CN113432777B - MEMS pressure sensor manufacturing method and MEMS pressure sensor - Google Patents
MEMS pressure sensor manufacturing method and MEMS pressure sensor Download PDFInfo
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- CN113432777B CN113432777B CN202110590117.XA CN202110590117A CN113432777B CN 113432777 B CN113432777 B CN 113432777B CN 202110590117 A CN202110590117 A CN 202110590117A CN 113432777 B CN113432777 B CN 113432777B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 45
- 239000010410 layer Substances 0.000 claims abstract description 268
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 54
- 239000000758 substrate Substances 0.000 claims abstract description 54
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 53
- 239000010703 silicon Substances 0.000 claims abstract description 53
- 238000001514 detection method Methods 0.000 claims abstract description 31
- 230000001681 protective effect Effects 0.000 claims abstract description 29
- 239000011241 protective layer Substances 0.000 claims abstract description 29
- 230000007797 corrosion Effects 0.000 claims abstract description 11
- 238000005260 corrosion Methods 0.000 claims abstract description 11
- 239000000126 substance Substances 0.000 claims abstract description 9
- 238000001312 dry etching Methods 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 16
- 238000007789 sealing Methods 0.000 claims description 7
- 238000005498 polishing Methods 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 abstract description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 1
- 238000005259 measurement Methods 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000004806 packaging method and process Methods 0.000 description 4
- 230000035882 stress Effects 0.000 description 3
- 239000012670 alkaline solution Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006355 external stress Effects 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L13/00—Devices or apparatus for measuring differences of two or more fluid pressure values
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
Abstract
The invention provides a manufacturing method of an MEMS pressure sensor and the MEMS pressure sensor, wherein the manufacturing method of the MEMS pressure sensor comprises the steps of sequentially carrying out chemical corrosion and thinning treatment on a first silicon substrate to form a first structural layer with an inclined opening; bonding a second structural layer on one side of the largest opening of the first structural layer, and thinning the second structural layer to form a sensitive layer; manufacturing a detection unit, a bonding pad and a protective layer covering the sensitive layer, the detection unit and the bonding pad on the sensitive layer; bonding a second silicon substrate on one side of the first structural layer, which is far away from the sensitive layer, and sequentially performing dry etching and thinning treatment on the second silicon substrate to form a third structural layer with regular openings; and bonding a protective cover on the protective layer to protect the sensitive layer structure and finally forming the MEMS pressure sensor. By utilizing the invention, the inclination characteristic of the side wall of the monocrystalline silicon substrate in wet etching can be utilized, the area of the pressure sensitive film is enlarged in a hole-opening inverted bonding mode, and the integral structural strength and performance of the sensor are improved.
Description
Technical Field
The invention relates to the technical field of microelectronic manufacturing, in particular to a manufacturing method of an MEMS pressure sensor and the MEMS pressure sensor.
Background
With the progress of society and the development of technology, in recent years, the volume of electronic products such as mobile phones and notebook computers is continuously reduced, and people have higher and higher performance requirements on the portable electronic products, so that the volume of electronic parts matched with the portable electronic products is continuously reduced, and the performance and consistency are continuously improved. MEMS sensors integrated by MEMS (Micro-Electro-Mechanical-System, abbreviated as MEMS) technology are beginning to be applied to electronic products such as mobile phones and notebook computers in batches, and the packaging volume thereof is smaller than that of the traditional sensors, so that they are favored by most manufacturers.
At present, the low-cost scheme of the mainstream MEMS pressure sensor is that a bulk silicon structure on the back of a wafer of a chip is corroded by an alkaline solution to form a back sensitive film with a slope, but a slope with more than 50 degrees is formed after a back cavity is corroded due to the lattice property, and the coverage area of the slope can be considered as a redundant part of a sensor chip, so that the whole volume of the chip is increased, and the chip yield of the whole wafer is reduced; meanwhile, due to the existence of the inclined inclination angle, the redundancy under the same chip size and volume is excessive, the size of the sensitive film is reduced, the sensitivity index of the pressure sensor chip is greatly reduced, and finally the overall performance of a sensor device is reduced.
In addition, in the traditional process, the sensitive film is formed by adopting alkaline solution corrosion, and due to the characteristic of back wet corrosion, the back of the sensitive film has great nonuniformity, the thickness difference between the center and the edge area of the sensitive film is also caused, errors are easily introduced in the measurement of the sensor, and the measurement precision of the sensor is reduced.
Disclosure of Invention
In view of the above problems, an object of the present invention is to provide a method for manufacturing a MEMS pressure sensor and a MEMS pressure sensor, so as to solve the problems of the conventional sensor manufacturing process, such as excessive redundancy, low sheet output, high cost, reduced size of the sensitive film, and influence on the sensitivity and reliability of the sensor.
The manufacturing method of the MEMS pressure sensor comprises the steps of sequentially carrying out chemical corrosion and thinning treatment on a first silicon substrate to form a first structural layer with an inclined opening; bonding a second structural layer on one side of the largest opening of the first structural layer, and thinning the second structural layer to form a sensitive layer; manufacturing a detection unit, a bonding pad and a protective layer covering the sensitive layer, the detection unit and the bonding pad on the sensitive layer; bonding a second silicon substrate on one side of the first structural layer, which is far away from the sensitive layer, and sequentially performing dry etching and thinning treatment on the second silicon substrate to form a third structural layer with regular openings; and bonding a protective cover on the protective layer to form the MEMS pressure sensor.
In addition, the optional technical scheme is that the positions of the openings of the first structural layer and the third structural layer are correspondingly arranged; and the size of the opening of the third structural layer is larger than the size of the smallest opening of the first structural layer.
In addition, the optional technical scheme is that a vent hole is formed in the protective cover; and a sealing layer is arranged on one side of the third structural layer far away from the sensitive layer, and the sealing layer is matched with the third structural layer, the first structural layer and the sensitive layer to form a closed space.
In addition, an optional technical scheme is that the protective cover and the sensitive layer are matched to form a closed space, and the lower side of the sensitive layer is communicated with the outside through the openings of the first structural layer and the third structural layer.
In addition, an optional technical scheme is that an avoiding groove is formed in the protective layer, one side of the bonding pad is connected with the detection unit, and the other side of the bonding pad is connected with the outside through the avoiding groove.
In addition, an optional technical solution is that after the thinning processing is performed on the first silicon substrate, the second structure layer, and the second silicon substrate, the method further includes: and polishing the thinned first silicon substrate, the thinned second structure layer and the thinned second silicon substrate.
In addition, an optional technical scheme is that the detection unit comprises a lightly doped region arranged in the sensitive layer and a heavily doped region connected with the lightly doped region; the bonding pad is connected with the heavily doped region.
In addition, optionally, a contact area of the sensitive layer and the first structural layer is smaller than a contact area of the first structural layer and the third structural layer.
According to another aspect of the present invention, there is provided a MEMS pressure sensor manufacturing method, including: sequentially carrying out chemical corrosion and thinning treatment on the first silicon substrate to form a first structural layer with an inclined opening; bonding a second silicon substrate on one side of the first structural layer, which is far away from the sensitive layer, and carrying out dry etching and thinning treatment on the second silicon substrate to form a third structural layer; bonding a second structural layer on one side of the largest opening of the first structural layer, and thinning the second structural layer to form a sensitive layer; manufacturing a detection unit, a bonding pad and a protective layer covering the sensitive layer, the detection unit and the bonding pad on the sensitive layer; a protective cap is bonded over the protective layer to form a MEMS pressure sensor.
According to another aspect of the present invention, there is provided a MEMS pressure sensor comprising: the sensor comprises a third structural layer with an opening, a first structural layer which is arranged on the third structural layer and is provided with an inclined opening, and a sensitive layer which is arranged on one side of the first structural layer far away from the third structural layer; the sensitive layer is provided with a detection unit, a bonding pad and a protective layer covering the sensitive layer, the detection unit and the bonding pad; and a protective cover is arranged on the outer side of the protective layer, and the sensitive layer is communicated with the outside through a vent hole in the protective cover, or the sensitive layer is communicated with the outside through openings in the third structural layer and the first structural layer.
By utilizing the manufacturing method of the MEMS pressure sensor and the MEMS pressure sensor, firstly, the first silicon substrate is sequentially subjected to chemical corrosion and thinning treatment to form a first structural layer with an inclined opening; bonding a second structural layer on one side of the largest opening of the first structural layer, and thinning the second structural layer to form a sensitive layer; bonding a second silicon substrate on one side of the first structural layer, which is far away from the sensitive layer, and sequentially performing dry method and thinning treatment on the second silicon substrate to form a third structural layer with regular openings; and finally, a protective cover is bonded on the protective layer to form the MEMS pressure sensor, the overall structural strength can be improved through the third structural layer, the influence of internal and external stress on the sensitive layer is reduced, in addition, the size of the sensitive layer can be enlarged by utilizing the inclined holes of the first structural layer, the overall uniformity and sensitivity are improved, and the sensor is high in measurement precision, stable in performance and strong in reliability.
To the accomplishment of the foregoing and related ends, one or more aspects of the invention comprise the features hereinafter fully described. The following description and the annexed drawings set forth in detail certain illustrative aspects of the invention. These aspects are indicative, however, of but a few of the various ways in which the principles of the invention may be employed. Further, the present invention is intended to include all such aspects and their equivalents.
Drawings
Other objects and results of the present invention will become more apparent and readily appreciated by reference to the following description taken in conjunction with the accompanying drawings, and as the invention becomes more fully understood. In the drawings:
FIG. 1 is a flow chart of a method of manufacturing a MEMS pressure sensor in accordance with an embodiment of the present invention;
FIG. 2 is a schematic diagram of a method of manufacturing a MEMS pressure sensor in accordance with an embodiment of the present invention;
FIG. 3 is a flow chart of a method of manufacturing a MEMS pressure sensor in accordance with another embodiment of the invention;
FIG. 4 is a schematic diagram of a MEMS pressure sensor in accordance with an embodiment of the present invention;
fig. 5 is a schematic structural diagram of a MEMS pressure sensor according to another embodiment of the invention.
Wherein the reference numerals include: the structure comprises a first silicon substrate 1, an opening 11, a sensitive layer 2, a protective layer 21, a bonding pad 3, a detection unit 4, a second silicon substrate 5, an opening 51, a protective cover 6, an avoiding groove 61, a vent hole 62 and a sealing layer 7.
The same reference numbers in all figures indicate similar or corresponding features or functions.
Detailed Description
In the following description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of one or more embodiments. It may be evident, however, that such embodiment(s) may be practiced without these specific details. In other instances, well-known structures and devices are shown in block diagram form in order to facilitate describing one or more embodiments.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the invention and to simplify the description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and are therefore not to be considered limiting of the invention.
To describe the MEMS pressure sensor manufacturing method and the MEMS pressure sensor of the present invention in detail, embodiments of the present invention will be described below with reference to the accompanying drawings.
Fig. 1 and 2 illustrate the flow and principle of a method of manufacturing a MEMS pressure sensor according to an embodiment of the invention from different angles, respectively.
As shown in fig. 1 and fig. 2, a method for manufacturing a MEMS pressure sensor according to an embodiment of the present invention mainly includes the following steps:
s110: sequentially carrying out chemical corrosion and thinning treatment on the first silicon substrate 1 to form a first structural layer with an inclined opening 11;
s120: bonding a second structural layer on one side of the largest opening of the first structural layer, and thinning the second structural layer to form a sensitive layer 2;
s130: manufacturing a detection unit 4, a bonding pad 3 and a protective layer 21 covering the sensitive layer 2, the detection unit 4 and the bonding pad 3 on the sensitive layer 2;
s140: bonding a second silicon substrate 5 on one side of the first structural layer, which is far away from the sensitive layer 2, and sequentially performing dry etching and thinning treatment on the second silicon substrate 5 to form a third structural layer with regular openings 51;
s150: a protective cover is bonded on the protective layer 21 to form a MEMS pressure sensor.
Specifically, in step S110, a common silicon wafer may be used as the first silicon substrate 1, and the first silicon substrate 1 is etched by a wet etching or chemical etching process to form the openings 11 with the edges being inclined inside the first silicon substrate 1; then, the first silicon substrate 1 is thinned to make the whole thickness meet the manufacturing requirement of the sensor, and a first structural layer is formed.
Since the openings 11 in the first structural layer are distributed in an inclined manner, and the longitudinal section of the openings is distributed in a trapezoidal manner, in order to increase the area of the sensitive layer 2 in the openings 11 as much as possible, that is, to increase the effective area of the sensitive film for signal detection (the sensitive layer 2 comprises a fixing portion in contact with the first structural layer and the sensitive film suspended in the openings 11 of the first structural layer), the second structural layer can be bonded to the side of the first structural layer having the largest size of the openings 11 (that is, the largest opening), and the second structural layer is thinned to form the sensitive layer 2.
Further, in step S130, the detecting unit 4, the pad 3, and the protective layer 21 covering the sensitive layer 2, the detecting unit 4, and the pad 3 are fabricated on the sensitive layer 2, wherein the detecting unit 4 may further include a lightly doped region disposed in the sensitive layer 2 and a heavily doped region connected to the lightly doped region, the lightly doped region and the heavily doped region form the detecting unit 4 for detecting an external pressure signal, and the pad 3 is connected to the heavily doped region.
In addition, in order to ensure that the bonding pad 3 can be conducted with the outside, a plurality of avoiding grooves corresponding to the positions of the bonding pad 3 can be arranged on the protective cover, one side of the bonding pad 3 is connected with the detecting unit 4, and the other side of the bonding pad 3 is connected with the outside through the avoiding grooves, so that subsequent packaging and routing are facilitated.
In order to increase the stress area at the bottom of the pressure sensor and improve the adhesion reliability of the pressure sensor, the second silicon substrate 5 can be bonded on one side of the first structural layer, which is far away from the sensitive layer 2, and the second silicon substrate 5 is sequentially subjected to etching and thinning treatment to form a third structural layer with regular openings 51, so that the cross-sectional area of the bottom support leg can be enlarged by arranging the third structural layer, the effective adhesion area of the pressure sensor is enlarged, and the reliability of the product in the long-term use process is improved. In addition, due to the adoption of the multi-layer bonding structure, the overall structural strength of the product can be improved, and the influence of internal and external stress on the sensitive layer 2 is reduced. Meanwhile, due to the arrangement of the inverted inclined holes 11 of the first structural layer, the effective area of the sensitive film can be ensured, and the sensitivity parameter of the product is improved.
The opening positions of the first structural layer and the third structural layer are correspondingly arranged; and the size of the opening 51 of the third structural layer is larger than the minimum size of the opening 11 of the first structural layer, and the openings of the first structural layer and the third structural layer are communicated and cooperate to form a channel for communicating the sensitive layer 2 with the outside.
It should be noted that, in order to ensure the uniformity of the thinned structure layer, after the thinning process is performed on the first silicon substrate 1, the second structure layer, and the second silicon substrate, the method further includes: the first silicon substrate 1, the second structure layer and the second silicon substrate after thinning treatment are polished, so that the uniformity of the film surface and the firmness of the joint of each part can be improved, and the overall measurement precision is improved.
In addition, the thicknesses of the sensitive layer 2, the first structural layer and the third structural layer can be set according to the size or requirement of the product, and are not limited to the specific sizes in the drawings.
In one embodiment of the present invention, the MEMS pressure sensor may include two structural forms, namely, a front pressure-bearing structure and a back pressure-bearing structure, wherein the MEMS pressure sensor of the front pressure-bearing structure may be provided with a plurality of vent holes on the protective cover; and, set up the seal layer in the third structural layer one side of keeping away from sensitive layer 2, the seal layer cooperatees with third structural layer, first structural layer and sensitive layer 2 and forms airtight space, and the upside of sensitive layer 2 is led to through with the external world through the air vent.
The MEMS pressure sensor with the back pressure-bearing structure is characterized in that the protective cover is not provided with a ventilation structure, the protective cover and the sensitive layer 2 are matched to form a closed space, and the lower side of the sensitive layer 2 is directly communicated with the outside through the holes of the first structural layer and the third structural layer. Moreover, the contact area of the sensitive layer 2 and the first structural layer is smaller than that of the first structural layer and the third structural layer, so that the effective area of the sensitive film can be enlarged, and the area of the bottom support leg of the silicon substrate can be increased.
In the above method for manufacturing the MEMS pressure sensor, the order of the first structural layer, the sensitive layer, and the third structural layer may be adjusted, for example, the first structural layer, the sensitive layer, and the third structural layer may be processed in sequence, or the first structural layer, the third structural layer, and the sensitive layer may be processed in sequence, the step of setting the corresponding protective cover may be performed after the sensitive layer is processed, or the step of setting the protective cover may be performed after the first structural layer, the sensitive layer, and the third structural layer are all processed, and the steps of the method for manufacturing the MEMS pressure sensor may be flexibly adjusted without affecting the structure of the product.
In particular, FIG. 3 shows a flow of a MEMS pressure sensor fabrication method according to another embodiment of the invention.
As shown in fig. 3, in this embodiment, the MEMS pressure sensor manufacturing method may include:
s210: sequentially carrying out chemical corrosion and thinning treatment on the first silicon substrate to form a first structural layer with an inclined opening;
s220: bonding a second silicon substrate on one side of the first structural layer, which is far away from the sensitive layer, and performing dry etching and thinning treatment on the second silicon substrate to form a third structural layer;
s230: bonding a second structural layer on one side of the largest opening of the first structural layer, and thinning the second structural layer to form a sensitive layer;
s240: manufacturing a detection unit, a bonding pad and a protective layer covering the sensitive layer, the detection unit and the bonding pad on the sensitive layer;
s250: a protective cap is bonded over the protective layer to form a MEMS pressure sensor.
In another embodiment of the present invention, a method for manufacturing a MEMS pressure sensor may include:
1. sequentially carrying out chemical corrosion and thinning treatment on the first silicon substrate to form a first structural layer with an inclined opening;
2. bonding a second structural layer on one side of the largest opening of the first structural layer, and thinning the second structural layer to form a sensitive layer;
3. manufacturing a detection unit, a bonding pad and a protective layer covering the sensitive layer, the detection unit and the bonding pad on the sensitive layer;
4. and bonding a protective cover on the protective layer to form the MEMS pressure sensor.
5. And bonding a second silicon substrate on one side of the first structural layer, which is far away from the sensitive layer, and performing dry etching and thinning treatment on the second silicon substrate to form a third structural layer.
The above embodiments can be referred to each other, and details of manufacturing are not repeated.
The invention also provides a MEMS pressure sensor corresponding to the manufacturing method of the MEMS pressure sensor.
In particular, FIG. 4 shows a schematic structure of a MEMS pressure sensor in accordance with an embodiment of the invention.
As shown in fig. 4, the MEMS pressure sensor of the embodiment of the present invention includes a third structural layer (formed by the second silicon substrate 5) having an opening, a first structural layer (formed by the first silicon substrate 1) disposed on the third structural layer and having an inclined opening, and a sensitive layer 2 disposed on a side of the first structural layer away from the third structural layer; wherein, a detection unit 4, a bonding pad 3 and a protective layer covering the sensitive layer 2, the detection unit 4 and the bonding pad 3 are arranged on the sensitive layer 2; the protective cover 6 is arranged outside the protective layer, a closed space is formed between the protective cover 6 and the upper side of the sensitive layer 2, and the lower side of the sensitive layer 2 is communicated with the outside through the openings (including the opening 51 of the third structural layer and the opening 11 of the first structural layer) on the third structural layer and the first structural layer.
FIG. 5 shows a schematic structure of a MEMS pressure sensor in accordance with another embodiment of the invention.
As shown in fig. 5, the MEMS pressure sensor according to another embodiment of the present invention includes a third structural layer (formed by the second silicon substrate 5) having an opening, a first structural layer (formed by the first silicon substrate 1) disposed on the third structural layer and having an inclined opening, and a sensing layer 2 disposed on a side of the first structural layer away from the third structural layer; the detection unit 4, the bonding pad 3 and a protective layer covering the sensitive layer 2, the detection unit 4 and the bonding pad 3 are arranged on the sensitive layer 2; the protective cover 6 is arranged on the outer side of the protective layer, the plurality of vent holes 62 are formed in the protective cover 6, the sealing layer 7 is arranged on one side, away from the sensitive layer, of the third structural layer, and the sealing layer 7 is matched with the third structural layer, the first structural layer and the sensitive layer to form a closed space. The openings in the third structural layer and the first structural layer on the lower side of the sensitive layer 2 (including the opening 51 of the third structural layer and the opening 11 of the first structural layer) are not in communication with the outside, while the upper side of the sensitive layer is in communication with the outside through a plurality of vent holes 62.
In addition, in the two embodiments, in order to ensure that the pad 3 can be conducted with the outside, a plurality of avoiding grooves 61 corresponding to the pad 3 are further arranged on the protective cover, one side of the pad 3 is connected with the detecting unit 4, and the other side of the pad 3 is connected with the outside through the avoiding grooves 61, so that subsequent packaging routing is facilitated.
It should be noted that, for the embodiments of the MEMS pressure sensor, reference may be made to the description in the embodiments of the manufacturing method of the MEMS pressure sensor, and details are not repeated here.
According to the manufacturing method of the MEMS pressure sensor and the MEMS pressure sensor, the invention has the following beneficial effects:
1. the substrate result of multilayer bonding is adopted, the integral structural rigidity of the MEMS pressure sensor can be improved, and the influence of the internal stress and the external packaging stress of a product is effectively reduced.
2. The support design of the inverted inclination angle is adopted, so that the effective area of the sensitive film can be increased, and the sensitivity and the detection performance of the product are improved.
3. The sensitive layer is manufactured by adopting a thinning and polishing treatment process, so that the uniformity of the film surface and the overall measurement precision can be improved.
4. The cross-sectional area of the bottom support leg can be effectively enlarged, the bonding area of the MEMS pressure sensor is enlarged, and the reliability and stability of the MEMS pressure sensor in the long-term use process are improved.
A MEMS pressure sensor manufacturing method and a MEMS pressure sensor according to the present invention are described above by way of example with reference to the accompanying drawings. However, it will be appreciated by those skilled in the art that various modifications may be made to the MEMS pressure sensor and method of manufacturing the same without departing from the scope of the invention. Therefore, the scope of the present invention should be determined by the contents of the appended claims.
Claims (9)
1. A method of manufacturing a MEMS pressure sensor, comprising:
sequentially carrying out chemical corrosion and thinning treatment on the first silicon substrate to form a first structural layer with an inclined through hole;
bonding a second structural layer on one side of the largest through hole of the first structural layer, and thinning the second structural layer to form a sensitive layer;
manufacturing a detection unit, a bonding pad and a protective layer covering the sensitive layer, the detection unit and the bonding pad on the sensitive layer;
bonding a second silicon substrate on one side of the first structure layer, which is far away from the sensitive layer, and sequentially performing dry etching and thinning treatment on the second silicon substrate to form a third structure layer with regular through holes;
wherein the contact area of the sensitive layer and the first structural layer is smaller than that of the first structural layer and the third structural layer;
and bonding a protective cover on the protective layer to form the MEMS pressure sensor.
2. The method of manufacturing a MEMS pressure sensor of claim 1,
the through holes of the first structural layer and the third structural layer are correspondingly arranged; and the number of the first and second electrodes,
the size of the through hole of the third structural layer is larger than the size of the minimum through hole of the first structural layer.
3. The method of manufacturing a MEMS pressure sensor of claim 1,
the protective cover is provided with a vent hole; and the number of the first and second electrodes,
and a sealing layer is arranged on one side of the third structural layer, which is far away from the sensitive layer, and the sealing layer is matched with the third structural layer, the first structural layer and the sensitive layer to form a closed space.
4. The method of manufacturing a MEMS pressure sensor of claim 1,
the protective cover and the sensitive layer are matched to form a closed space, and the lower side of the sensitive layer is communicated with the outside through the through holes of the first structural layer and the third structural layer.
5. The method of manufacturing a MEMS pressure sensor of claim 1,
an avoidance groove is formed in the protective layer, one side of the bonding pad is connected with the detection unit, and the other side of the bonding pad is connected with the outside through the avoidance groove.
6. The method of manufacturing a MEMS pressure sensor of claim 1,
after the first silicon substrate, the second structure layer and the second silicon substrate are thinned, the method further comprises the following steps:
and polishing the thinned first silicon substrate, the thinned second structure layer and the thinned second silicon substrate.
7. The method of manufacturing a MEMS pressure sensor of claim 1,
the detection unit comprises a lightly doped region arranged in the sensitive layer and a heavily doped region connected with the lightly doped region;
the pad is connected with the heavily doped region.
8. A method of manufacturing a MEMS pressure sensor, comprising:
sequentially carrying out chemical corrosion and thinning treatment on the first silicon substrate to form a first structural layer with an inclined through hole;
bonding a second silicon substrate on one side of the first structure layer, which is far away from the maximum through hole, and performing dry etching and thinning treatment on the second silicon substrate to form a third structure layer;
bonding a second structural layer on one side of the largest through hole of the first structural layer, and thinning the second structural layer to form a sensitive layer; wherein the contact area of the sensitive layer and the first structural layer is smaller than that of the first structural layer and the third structural layer;
manufacturing a detection unit, a bonding pad and a protective layer covering the sensitive layer, the detection unit and the bonding pad on the sensitive layer;
bonding a protective cover on the protective layer to form the MEMS pressure sensor.
9. A MEMS pressure sensor, comprising: the sensor comprises a third structural layer with a through hole, a first structural layer which is arranged on the third structural layer and is provided with an inclined through hole, and a sensitive layer which is arranged on one side of the first structural layer far away from the third structural layer; wherein, the first and the second end of the pipe are connected with each other,
wherein the contact area of the sensitive layer and the first structural layer is smaller than that of the first structural layer and the third structural layer;
a detection unit, a bonding pad and a protective layer covering the sensitive layer, the detection unit and the bonding pad are arranged on the sensitive layer;
and a protective cover is arranged on the outer side of the protective layer, and the sensitive layer is communicated with the outside through a vent hole in the protective cover, or the sensitive layer is communicated with the outside through a through hole in the third structural layer and a through hole in the first structural layer.
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| CN110155937A (en) * | 2019-06-11 | 2019-08-23 | 龙微科技无锡有限公司 | A kind of high consistency pressure sensor chip preparation method of low cost |
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| JP5039929B2 (en) * | 2006-08-07 | 2012-10-03 | セイコーインスツル株式会社 | Method for manufacturing MEMS device |
| WO2011083161A2 (en) * | 2010-01-11 | 2011-07-14 | Elmos Semiconductor Ag | Micro-electromechanical semiconductor component and method for the production thereof |
| GB2556280B (en) * | 2016-01-28 | 2020-05-27 | Cirrus Logic Int Semiconductor Ltd | MEMS device and process |
| CN112607701A (en) * | 2020-11-26 | 2021-04-06 | 西人马联合测控（泉州）科技有限公司 | MEMS pressure chip and preparation method thereof |
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| CN1657401A (en) * | 2004-02-17 | 2005-08-24 | 罗伯特·博世有限公司 | Differential pressure sensor |
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| CN103837289A (en) * | 2013-11-22 | 2014-06-04 | 中航（重庆）微电子有限公司 | Pressure sensor and manufacturing method thereof |
| DE102014219547A1 (en) * | 2014-09-26 | 2016-03-31 | Robert Bosch Gmbh | pressure sensor |
| CN106153221A (en) * | 2016-08-26 | 2016-11-23 | 沈阳仪表科学研究院有限公司 | A kind of manufacture method of high-precision pressure sensor based on Si-Si bonding |
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