CN110155937A - A kind of high consistency pressure sensor chip preparation method of low cost - Google Patents
A kind of high consistency pressure sensor chip preparation method of low cost Download PDFInfo
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- CN110155937A CN110155937A CN201910501531.1A CN201910501531A CN110155937A CN 110155937 A CN110155937 A CN 110155937A CN 201910501531 A CN201910501531 A CN 201910501531A CN 110155937 A CN110155937 A CN 110155937A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00349—Creating layers of material on a substrate
- B81C1/0038—Processes for creating layers of materials not provided for in groups B81C1/00357 - B81C1/00373
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00777—Preserve existing structures from alteration, e.g. temporary protection during manufacturing
- B81C1/00785—Avoid chemical alteration, e.g. contamination, oxidation or unwanted etching
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C3/00—Assembling of devices or systems from individually processed components
- B81C3/001—Bonding of two components
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
- G01L1/2287—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges
- G01L1/2293—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges of the semi-conductor type
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- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
The present invention relates to MEMS sensor fields, disclose a kind of high consistency pressure sensor chip preparation method of low cost, include the following steps: S1: selecting double silicon wafers of throwing as base silicon wafer；S2: thermal oxide is carried out to the base silicon wafer and forms the first oxide layer；S3: cavity is etched in the upper surface of the base silicon wafer using photoetching process；S4: thermal oxide is re-started to the upper surface of the base silicon wafer to make the first oxide layer；S5: select double silicon wafers of throwing as top layer silicon wafer；S6: the top layer silicon wafer and the base silicon wafer are bonded integral；S7: the top layer wafer thinning polishes after being thinned.The technical issues of solution is that in the prior art, the method for preparing MEMS pressure sensor chip haves the defects that at high cost low with bulk article consistency.Sensitive membrane is made by bonding technology, the process of grinding and polishing, thickness control is horizontal, and at low cost, consistency is high.
Description
Technical field
The present invention relates to MEMS sensor fields, and in particular to a kind of high consistency pressure sensor chip preparation of low cost
Method.
Background technique
The traditional preparation methods of MEMS pressure sensor chip are to corrode back chamber 100 by alkaline solutions such as KOH, TMAH,
Stop corrosion after reaching designated depth, obtained silicon thin film is as sensitive membrane 200 (as shown in Figure 1).This preparation method exists
Some defects, such as: since the flatness of alkali liquid corrosion directly determines the thickness uniformity of sensitive membrane, back chamber corrosion needs
The proportion of three kinds of lye is carried out, thick rotten, speed corruption, essence corruption are respectively corresponded, when closer to designated depth, corrosion rate is slower, with
Precision is controlled, thus causes fabrication cycle long, time cost is high, and sensitive membrane has corrosion non-uniform phenomenon, bulk article
Consistency is poor.
In addition, due to the physical characteristic of monocrystalline silicon piece, corrosion chamber side wall will will form 54.74 ° of inclined-plane angle, the portion
Divide and directly increase the unit size of chip, reduces wafer piece rate, improve product cost；Due to MEMS pressure sensor
Measurement characteristic, traditional pressure sensor back chamber aperture and etching tank all can be very big, so as to cause entire pressure sensor
Clamped part very little, cavity is very big, when introduce pressure type, introduce internal stress increase.
Simultaneously as back chamber aperture is big, sensitive diaphragm area and tested gas interface are big, cause sensitive membrane easily miscellaneous by gas
Matter pollution, and then influence the reliability and service life of MEMS pressure sensor.
Summary of the invention
In view of the deficiency of background technique, invention provides a kind of high consistency pressure sensor chip preparations of low cost
Method, the technical problem to be solved is that in the prior art, prepare the method for MEMS pressure sensor chip there are at high cost and
The low defect of bulk article consistency.
In order to solve the above technical problems, the present invention provides the following technical scheme that
A kind of high consistency pressure sensor chip preparation method of low cost, includes the following steps:
S1: select double silicon wafers of throwing as base silicon wafer；
S2: thermal oxide is carried out to the base silicon wafer and forms the first oxide layer；
S3: cavity is etched in the upper surface of the base silicon wafer using photoetching process；
S4: thermal oxide is re-started to the upper surface of the base silicon wafer to make the first oxide layer；
S5: select double silicon wafers of throwing as top layer silicon wafer；
S6: the top layer silicon wafer and the base silicon wafer are bonded integral；
S7: the top layer wafer thinning polishes after being thinned；
S8: resistance is formed in the top surface of the top layer silicon wafer using ion implantation technique；
S9: making the second oxide layer in the top surface of the top layer silicon wafer, makes through-hole in the second oxidation layer surface, so
Metal layer is formed using sputtering method afterwards, PAD point is then formed by photoetching and etching, then makes and protects in the layer on surface of metal
Sheath.
S10: alkali resistance is applied in top layer silicon wafer top surface and corrodes glue；
S11: alkali resistance corrosion glue then photoetching making corrosion region is applied in the bottom surface of the base silicon wafer, then passes through alkalinity
Etchant solution corrodes the corrosion region, to form venting channels in the base silicon wafer, the venting channels connect
Cavity body and outside.
Preferably, the oxidate temperature in the S2 and the S4 is 1100~1150 DEG C.
Preferably, the cavity depth in the S3 is 50~70 μm.
Preferably, the oxidated layer thickness in the S4 is 0.2~0.5 μm.
Preferably, the bonding process in the S6 includes that first pre- bonding and melting after the completion of the pre- bonding are bonded,
It is described it is pre- be bonded in 450 DEG C of progress, the melting is bonded in 1300 DEG C of progress.
Preferably, the metal layer thickness in the S9 is 0.1~0.2 μm.
Preferably, in the S11, the alkaline corrosion solution uses 95% KOH solution, and temperature setting is 120 DEG C.
The present invention at least has the following beneficial effects: compared with prior art
1) sensitive membrane being made by bonding technology, the process of grinding and polishing, thickness control is horizontal, and it is at low cost, one
Cause property is high.
2) purpose of base silicon wafer bottom surface corrosion, is greatly to reduce base silicon wafer bottom surface to form venting channels
The area of aperture, also just fundamentally reduces chip size, improves wafer piece rate, to directly reduce MEMS sensing
The monolithic cost of manufacture of device.
3) sensitive membrane and tested gas-contact area are small, to greatly reduce pollution of the gaseous impurity to sensitive membrane, pole
The big reliability and service life for improving MEMS pressure sensor；It compares and back side dry etching, uses self termination alkali
Cost can be greatly reduced in corrosion, and can only use middle fast erosion, and process costs reducing effect is obvious.
4) corrosion of base silicon wafer bottom surface is only used as through-hole effect, remains a large amount of body silicon structures, cavity area only accounts for very
Fraction, when pressure is introduced, pressure sensor inside sound construction, introducing stress is small, substantially reduces in pressure measuring service
Because the test error that chip interior is generated by stress influence can greatly improve MEMS pressure by low stress packing forms
The accuracy of measurement of sensor.
Detailed description of the invention
The present invention has following attached drawing:
Fig. 1 is the schematic diagram of the prior art；
Fig. 2 is the schematic diagram one of pressure sensor chip of the present invention in process of production；
Fig. 3 is the schematic diagram two of pressure sensor chip of the present invention in process of production；
Fig. 4 is the schematic diagram three of pressure sensor chip of the present invention in process of production；
Fig. 5 is the schematic diagram four of pressure sensor chip of the present invention in process of production；
Fig. 6 is the schematic diagram five of pressure sensor chip of the present invention in process of production；
Fig. 7 is the finished product schematic of pressure sensor chip of the present invention.
Specific embodiment
In conjunction with the accompanying drawings, the present invention is further explained in detail.These attached drawings are simplified schematic diagram, only with
Illustration illustrates basic structure of the invention, therefore it only shows the composition relevant to the invention.
As illustrated in figs. 2-7, the high consistency pressure sensor chip preparation method of a kind of low cost, includes the following steps:
S1: it selects double silicon wafers of throwing as base silicon wafer 1, laser label, remarks batch number and piece number can be carried out；
S2: thermal oxide is carried out to base silicon wafer 1 and forms dense oxide silicon protective layer, oxidate temperature is 1100~1150
DEG C, the first oxide layer 11 is formed, which is used as etch-protecting layer；
S3: it is etched using photoetching process in the upper surface of base silicon wafer 1, etches the first oxide layer 11, form sensitive membrane ruler
Very little range continues deep etching, etches cavity 12, which is that sensitive membrane provides scope of activities, 12 depth of cavity for 50~
70μm；
S4: due to the first oxide layer of etching injury 11, usually after the etch to the upper surface of base silicon wafer 1 again into
To make the first oxide layer 11, oxidate temperature is 1100~1150 DEG C for row thermal oxide, the first oxide layer 11 with a thickness of 0.2~
0.5μm；
S5: it selects double silicon wafers of throwing as top layer silicon wafer 2, laser label, remarks batch number and piece number can be carried out；
S6: bonding is first bonded using 450 DEG C in advance, and the time is set as 2 hours, uses 1300 DEG C after the completion of pre- bonding
Under the conditions of carry out melting bonding, by the step, top layer silicon wafer 2 be covered on the cavity 12 of base silicon wafer 1 and with base silicon wafer 1
Form overall structure；
S7: top layer silicon wafer 2 is thinned, and after being thinned to preset thickness, on the one hand the film thickness of re-polishing to design, polishing increases
The surface smoothness of top layer silicon wafer 2, on the other hand, and the thickness of fine tuning top layer silicon wafer 2, by polishing, top layer silicon wafer 2 is made
For the sensitive film layer of MEMS pressure sensor, the sensitive film thickness formed in this way is uniform, and bulk article consistency is high, and in this way
Mode form sensitive membrane, the period is short, and efficiency greatly improves, and time cost is low；
S8: using ion implanting top layer silicon specific region, forms P+ and P- structure.P+ is special due to good Ohmic contact
Property, as the coupling part between force sensing resistance 21 and lead.P- forms force sensing resistance 21, causes sensitive membrane by pressure change
Variation, P- force sensing resistance 21 generates change in resistance, and is changed by Wheatstone bridge feedback output voltage, forms pressure measurement.
S9: making the second oxide layer 23 in the top surface of top layer silicon wafer 2, makes through-hole on 23 surface of the second oxide layer, then
Metal layer 22 is formed using sputtering method, material usually selects Al or Au, then metal layer 22 passes through light with a thickness of 0.1~0.2 μm
It carves and etching forms PAD point, then make protective layer on 22 surface of metal layer.
S10: applying alkali resistance in 2 top surface of top layer silicon wafer and corrode glue, and alkali resistance can be selected and corrode PROTEK glue, it is therefore an objective in alkali
The figure of 2 top surface of top layer silicon wafer is protected in corrosion；
S11: applying alkali resistance corrosion glue then photoetching making corrosion region in the bottom surface of base silicon wafer 1, then rotten by alkalinity
Erosion solution corrodes corrosion region, to form venting channels 13 in base silicon wafer 1, venting channels 13 are connected to 12 He of cavity
Outside, alkaline corrosion solution use 95% KOH solution, and temperature setting is 120 DEG C.The corrosion is self termination alkali liquid corrosion, alkali
Liquid erodes to the i.e. automatic etch-stop of cavity 12 from the bottom surface of base silicon wafer 1 upwards, is connected to cavity 12 and external ventilation at this time
Channel 13 is formed, this is not in the process due to needing to control precision in final stage, and also there is no need to slow down corrosion rate, whole process is adopted
With middling speed corrosion and fast erosion, time loss is greatly reduced, time cost is reduced.
Above-mentioned corrosion process is connected to cavity and external venting channels only for being formed, rather than in order to form sensitive membrane,
The bottom surface corrosion of base silicon wafer of the present invention is only used as venthole effect as a result, remains a large amount of body silicon structures, cavity area only accounts for
Very little part, when pressure is introduced, pressure sensor inside sound construction, introducing stress is small, substantially reduces pressure measuring service
The middle test error generated by chip interior by stress influence can greatly improve MEMS pressure by low stress packing forms
The accuracy of measurement of force snesor.
Meanwhile sensitive membrane and tested gas interface are effectively reduced, to greatly reduce dirt of the gaseous impurity to sensitive membrane
Dye, greatly improves the reliability and service life of MEMS pressure sensor.
It is above-mentioned according to the present invention for enlightenment, through the above description, relevant staff completely can without departing from
In the range of this invention technical idea, various changes and amendments are carried out.The technical scope of this invention is not limited to
In the content on specification, it is necessary to which the technical scope thereof is determined according to the scope of the claim.
Claims (7)
1. a kind of high consistency pressure sensor chip preparation method of low cost, characterized by the following steps:
S1: select double silicon wafers of throwing as base silicon wafer；
S2: thermal oxide is carried out to the base silicon wafer and forms the first oxide layer；
S3: cavity is etched in the upper surface of the base silicon wafer using photoetching process；
S4: thermal oxide is re-started to the upper surface of the base silicon wafer to make the first oxide layer；
S5: select double silicon wafers of throwing as top layer silicon wafer；
S6: the top layer silicon wafer and the base silicon wafer are bonded integral；
S7: the top layer wafer thinning polishes after being thinned；
S8: resistance is formed in the top surface of the top layer silicon wafer using ion implantation technique；
S9: making the second oxide layer in the top surface of the top layer silicon wafer, makes through-hole in the second oxidation layer surface, then adopts
Metal layer is formed with sputtering method, PAD point is then formed by photoetching and etching, then makes and protects in the layer on surface of metal
Layer.
S10: alkali resistance is applied in top layer silicon wafer top surface and corrodes glue；
S11: alkali resistance corrosion glue then photoetching making corrosion region is applied in the bottom surface of the base silicon wafer, then passes through alkaline corrosion
Solution corrodes the corrosion region, to form venting channels in the base silicon wafer, the venting channels are connected to chamber
Body and outside.
2. the high consistency pressure sensor chip preparation method of low cost according to claim 1, it is characterised in that: described
Oxidate temperature in S2 and the S4 is 1100~1150 DEG C.
3. the high consistency pressure sensor chip preparation method of low cost according to claim 1, it is characterised in that: described
Cavity depth in S3 is 50~70 μm.
4. the high consistency pressure sensor chip preparation method of low cost according to claim 1, it is characterised in that: described
The first oxidated layer thickness in S4 is 0.2~0.5 μm.
5. the high consistency pressure sensor chip preparation method of low cost according to claim 1, it is characterised in that: described
Bonding process in S6 includes first pre- bonding and melting bonding after the completion of the pre- bonding, it is described it is pre- be bonded in 450 DEG C into
Row, the melting are bonded in 1300 DEG C of progress.
6. the high consistency pressure sensor chip preparation method of low cost according to claim 1, it is characterised in that: described
Metal layer thickness in S9 is 0.1~0.2 μm.
7. the high consistency pressure sensor chip preparation method of low cost according to claim 1, it is characterised in that: in institute
It states in S11, the alkaline corrosion solution uses 95% KOH solution, and temperature setting is 120 DEG C.
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Cited By (3)
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| CN113432778A (en) * | 2021-05-25 | 2021-09-24 | 歌尔微电子股份有限公司 | MEMS differential pressure sensor and manufacturing method thereof |
| CN113432777A (en) * | 2021-05-28 | 2021-09-24 | 歌尔微电子股份有限公司 | MEMS pressure sensor manufacturing method and MEMS pressure sensor |
| CN118458687A (en) * | 2024-05-28 | 2024-08-09 | 山东产研微纳与智能制造研究院有限公司 | Preparation method of C-SOI back cavity through hole |
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