TWI822098B - Method for detecting die fixing state by sound wave or electromagnetic wave - Google Patents

Abstract

A method for detecting die fixing state by sound wave or electromagnetic wave includes the following steps: forming a bond wave when a local area of the die is separated from a die fixing device and is in contact with a substrate; spreading the bond wave from the local area of the die to other area of the die and having a spread tendency so that the die is gradually separated from the die fixing device and fixed on the substrate; spreading a sound wave or an electromagnetic wave along a surface of the die; determining a sound volume change degree or an amplitude change degree or a frequency change degree of the sound wave, or determining an amplitude change degree or a frequency change degree of the electromagnetic wave, and obtaining a plurality of detecting signals; determining a distance change degree between the die and the die fixing device according to the detecting signals; determining the spread tendency of the bond wave according to the distance change degree between the die and the die fixing device; and determining if the die is fixed on the substrate tight or not according to the spread tendency of the bond wave.

Description

Method of detecting the state of solid crystal using sound waves or electromagnetic waves

The present invention relates to a method of solid crystal, in particular to a method of detecting the status of solid crystal by using acoustic waves or electromagnetic waves.

Integrated circuits are manufactured on semiconductor wafers in a mass manner and through multiple processes, and the wafers are further divided into a plurality of dies. In other words, a die is a small unpackaged integrated circuit body made of semiconductor materials. The divided plurality of die are neatly attached to a carrier device, and then a carrier frame is responsible for transporting the carrier device. Then the die bonding device sequentially transfers the die to the substrate for subsequent processing.

Furthermore, during the process of transferring the die to the substrate, local areas of the die break away from the die bonding device and contact the substrate to form a bond wave. The bonding wave spreads from a local area of the die to other areas of the die, causing the die to gradually separate from the die-bonding device and be fixed on the substrate.

However, the bottom surface of the die and the top surface of the substrate may enclose air bubbles to form a void, or some particles may adhere to the bottom surface of the die, resulting in the bottom surface of the die not being in close contact with the top surface of the substrate. . Once the die is not closely adhered to the substrate, subsequent processing procedures such as sorting or identification of the die will be easily affected by bubbles or particles, reducing the yield of subsequent processed products. The industry will usually process the die that is not closely adhered to the substrate. The combined grains are picked out.

However, there are a large number of crystal grains on the substrate and the size of the crystal grains is very small. It is difficult to accurately identify which crystal grains are closely adhered to the substrate and which crystal grains are not closely adhered to the substrate. Therefore, there is basically no way for the industry to pick out the dies that are not in close contact with the substrate.

The main purpose of the present invention is to provide a method for detecting the state of bonded crystals using acoustic waves or electromagnetic waves, which can accurately identify whether the crystal grains are closely adhered to the substrate.

In order to achieve the aforementioned goals, the present invention provides a method for detecting the state of a solid die using acoustic waves or electromagnetic waves, which includes the following steps: a local block of a die breaks away from a die solid device and contacts a substrate to form a bonding wave; bonding The wave spreads from a local area of the crystal grain to other areas of the crystal grain and has a diffusion tendency, causing the crystal grain to gradually break away from the die-fixing device and be fixed on the substrate; an acoustic wave or an electromagnetic wave propagates along the surface of the crystal grain ; Sensing the volume, amplitude or frequency changes of sound waves at different locations, or sensing the amplitude or frequency changes of electromagnetic waves at different locations and obtaining multiple sensing messages; determining the separation of the die and the die-bonding device based on the sensing messages The degree of distance change; the diffusion trend of the bonding wave is determined based on the change in the distance between the die and the die-bonding device; and the diffusion trend of the bonding wave is used to determine whether the die is closely attached to the substrate.

In some embodiments, the step of forming a bonding wave further includes: the die-bonding device generates an airflow through a positive pressure to blow the local area of the die, so that the local area of the die breaks away from the die-bonding device and flexes and deforms. Contact the substrate.

In some embodiments, the step of propagating acoustic waves or electromagnetic waves along the surface of the crystal grain further includes: propagating the acoustic wave or electromagnetic wave along the surface of the crystal grain in a gap between the crystal bonding device and the crystal grain, and then the acoustic wave or electromagnetic wave enters A plurality of channels of the solid crystal device; and wherein the step of sensing the volume or amplitude or frequency change degree of the sound wave at different positions, or sensing the amplitude or frequency change degree of the electromagnetic wave at different positions further includes: a plurality of sensors respectively sensing The volume, amplitude or frequency changes of the sound waves passing through the channels, or the plurality of sensors respectively sense the amplitude or frequency changes of the electromagnetic waves passing through the channels, and obtain a plurality of sensing information.

In some embodiments, the step of propagating the acoustic wave or the electromagnetic wave along the surface of the crystal grain further includes: the air flow generated by the positive pressure generates a wind-shearing sound wave after contacting the surface of the crystal grain.

In some embodiments, the step of propagating acoustic waves or electromagnetic waves along the surface of the crystal grain further includes: an acoustic wave generating device is disposed outside the crystal bonding device and the crystal grain and generates an acoustic wave.

In some embodiments, the step of propagating acoustic waves or electromagnetic waves along the surface of the crystal grain further includes: an electromagnetic wave generating device is disposed outside the crystal bonding device and the crystal grain and generates an electromagnetic wave.

In some embodiments, the step of determining the change in distance between the die and the die-bonding device further includes: a processing unit receiving the sensing information and determining the volume, amplitude or frequency of the sound waves at different locations based on the sensing information. The degree of change, or the degree of change in the amplitude or frequency of electromagnetic waves at different locations, is determined. The processing unit further determines the degree of change in the amplitude or frequency of the electromagnetic wave at different locations, or the degree of change in the amplitude or frequency of the electromagnetic wave in different locations. The degree of change in the distance between device separation; wherein, the step of determining the diffusion trend of the bonding wave further includes: the processing unit determines the diffusion trend of the bonding wave based on the degree of change in the distance between the crystal grain and the die-bonding device; and wherein, determining whether the crystal grain The step of closely bonding with the substrate further includes: the processing unit determines whether the crystal grain is closely bonded with the substrate based on the diffusion trend of the bonding wave.

The effect of the present invention is that the method of the present invention can use acoustic waves or electromagnetic waves to detect the solid state of the crystal, and accurately identify which crystal grains are closely adhered to the substrate and which crystal grains are not closely adhered to the substrate.

The following is a more detailed description of the embodiments of the present invention with reference to drawings and component symbols, so that those skilled in the art can implement them after reading this specification.

Please refer to FIGS. 1A to 9 . FIGS. 1A and 1B are flow charts of the method of the present invention. FIG. 2A shows a schematic diagram of the die-bonding device 10 and the sensor 80 . FIG. 2B shows the die-bonding device 10 and the sensor. 80 is a top view, Figure 3 shows a schematic diagram of the connection relationship between the air holes 11 to 14, the vacuum device 30 and the gas supply device 40, Figure 4 shows a schematic diagram of the connection relationship between the sensor 80 and the processing unit 90, Figures 5 and 6 It is a schematic diagram of steps S100 to S800 in the first embodiment of the method of the present invention. Figure 7 shows a schematic diagram of how the bulge 21 of the crystal grain 20 affects the volume change of the sound wave 61 and the diffusion trend 60 of the bonding wave. Figure 8 shows It is a schematic diagram of the diffusion trend 60 of the bonding wave when there are no holes or particles between the die 20 and the substrate 50. Figure 9 shows the diffusion trend of the bonding wave when there are holes 71 or particles between the die 20 and the substrate 50. 60 diagram. The invention provides a method for detecting the state of a solid crystal by using acoustic waves or electromagnetic waves, which includes the following steps:

Step S100 , as shown in FIG. 1A and FIG. 5 , a die bonding device 10 generates an adsorption force to adsorb a die 20 through a negative pressure 31 . More specifically, as shown in FIGS. 2A and 2B , the die-bonding device 10 has four air holes 11 ~ 14 , and the air holes 11 ~ 14 are distributed at the four corners 101 ~ 104 of the die-bonding device 10 ; as shown in Figure 3 As shown, the air holes 11 to 14 are connected to a vacuum device 30 and a gas supply device 40; as shown in Figure 2B, Figure 3 and Figure 5, the vacuum device 30 pumps the air holes 11 to 14 to generate negative pressure 31, The die-bonding device 10 uses the negative pressure 31 to generate an adsorption force to attract the four corners of the die 20 , so that the periphery of the die 20 is closely attached to the bottom surface of the die-bonding device 10 . Because the periphery of the die 20 can be closely attached to the periphery of the bottom surface of the die-bonding device 10, there is no gap between the periphery of the die 20 and the periphery of the bottom surface of the die-bonding device 10, preventing external air from entering and affecting the negative pressure 31 The adsorption force is generated to adsorb the crystal grains 20 .

Step S200 , as shown in FIG. 1A , FIG. 6 and FIG. 7 , the die bonding device 10 uses a positive pressure 41 to generate an airflow to blow the local area of the die 20 , so that the local area of the die 20 is separated from the die bonding device 10 And it is flexed and deformed to contact a substrate 50. After the local area of the die 20 contacts the substrate 50, a bond wave is formed. Step S200 of the first embodiment can be further divided into the following two implementation modes.

Regarding the first embodiment, a local area of the die 20 is a corner of the die 20 , and the die bonding device 10 generates airflow through the positive pressure 41 to blow the corner of the die 20 , so that the corner of the die 20 is separated from the die bonding device. 10 and is flexed and deformed to contact the substrate 50. After the corners of the die 20 contact the substrate 50, a bonding wave is formed. To be more specific, the vacuum device 30 stops pumping the air holes 11 in the corners 101 of the die-bonding device 10, and the air holes 11 stop generating adsorption force to adsorb the corners of the die 20 through the negative pressure 31. At the same time, the gas supply device 40 starts to pump air into the corners of the die-bonding device 10. The air holes 11 in the corners 101 of the crystal device 10 blow air to generate positive pressure 41 , and the air holes 11 begin to generate airflow to blow the corners of the die 20 through the positive pressure 41 . The vacuum device 30 continues to evacuate the pores 12 ~ 14 in the other corners 102 ~ 104 of the crystal bonding device 10 , so that the pores 12 ~ 14 in the other corners 102 ~ 104 of the crystal bonding device 10 still maintain the adsorption force generated by the negative pressure 31 Adsorb other corners of the crystal grain 20 . Thereby, the die 20 can not only remain fixed to the die-bonding device 10 , but also ensure that only the corners of the entire die 20 are deflected and deformed most prominently, so that the corners of the die 20 can contact the substrate 50 in a point contact manner. Because the corners of the die 20 contact the substrate 50 in a point contact manner, a bonding force will be generated at the corners of the die 20 and its vicinity, and this bonding force will further form a bonding wave. To be more specific, the vacuum device 30 sequentially stops pumping the air holes 12 ~ 14 in other corners 102 ~ 104 of the die bonding device 10, and the air holes 12 ~ 14 sequentially stop providing negative pressure 31 along the diagonal direction. The gas supply device 40 sequentially begins to blow air to the air holes 12 to 14 in other corners 102 to 104 of the die bonding device 10. The air holes 12 to 14 sequentially begin to provide positive pressure 41 along the diagonal direction to generate airflow to blow the crystal grains. 20, so that the other corners of the die 20 are sequentially blown by the airflow along the diagonal direction to generate a pressure difference fluctuation. The pressure difference fluctuation can further cause the corners of the die 20 to form a sticking state after contacting the substrate 50. Combined wave.

Regarding the second embodiment, a local area of the die 20 is one side of the die 20 , and the die bonding device 10 generates airflow through the positive pressure 41 to blow the side of the die 20 , so that the side of the die 20 is detached. The die bonding device 10 is flexed and deformed to contact the substrate 50. After the side of the die 20 contacts the substrate 50, a bonding wave is formed. To be more specific, the vacuum device 30 stops pumping air from the pores 11 and 12 at the two corners 101 and 102 of the side 15 of the die-bonding device 10 , and the pores 11 and 12 stop using the negative pressure 31 to generate an adsorption force to absorb the crystal grain 20 At the same time, the gas supply device 40 begins to blow air into the air holes 11 and 12 at the two corners 101 and 102 of the side 15 of the die-bonding device 10 to generate positive pressure 41. 41 generates airflow to blow the two corners of the side of the die 20 . The vacuum device 30 continues to evacuate the pores 13 and 14 at the two corners 103 and 104 of the other side 16 of the die-bonding device 10 so that the pores 13 and 14 still maintain the adsorption force generated by the negative pressure 31 to absorb the crystal grain 20 The second corner on the other side. Thereby, the die 20 can not only remain fixed to the die-bonding device 10 , but also ensure that only the side of the entire die 20 is deflected and deformed and is the most protruding, so that the side of the die 20 can contact the substrate 50 in a line contact manner. . Because the side edges of the die 20 contact the substrate 50 in a line contact manner, a bonding force will be generated on the side edges of the die 20 and its vicinity, and this bonding force will further form a bonding wave. To be more specific, the vacuum device 30 stops pumping the air holes 13 and 14 at the two corners 103 and 104 of the other side 16 of the die bonding device 10, and the air holes 13 and 14 stop providing the negative pressure 31, and the gas supply device 40 continues The air holes 13 and 14 at the two corners 103 and 104 of the other side 16 of the die bonding device 10 begin to be blown, and the air holes 13 and 14 begin to provide positive pressure 41 to generate airflow to blow the other side of the die 20, so that The die 20 is sequentially blown by the airflow from one side to the other side to generate a pressure difference fluctuation. The pressure difference fluctuation can further cause the sides of the die 20 to form bonding waves after contacting the substrate 50 .

Step S300, as shown in FIG. 1A, FIG. 6 and FIG. 7, the bonding wave spreads from the local area of the die 20 to other areas of the die 20 and has a diffusion trend 60, so that the die 20 gradually detaches. The die bonding device 10 and the die 20 are gradually fixed on the substrate 50 . Step S300 of the first embodiment can be further divided into the following two implementation modes.

Regarding the first embodiment, the pressure difference fluctuation guides the bonding wave to spread along the diagonal direction of the crystal grain 20 . Regarding the second embodiment, the pressure difference fluctuation guides the bonding wave to spread from one side of the die 20 to the other side.

In some embodiments, the number and distribution of the pores may have multiple possibilities. For example, the number of the air holes is six, four of which are distributed at four corners of the crystal bonding device 10 , and the other two air holes are distributed on two opposite sides of the crystal bonding device 10 . For example, the number of the air holes is nine, four of which are distributed at the four corners of the crystal bonding device 10, and the other four air holes are distributed on the four sides of the crystal bonding device 10 and are respectively located between the corners. between. For example, there are only two air holes, and they are distributed at two opposite corners or two opposite sides of the die-bonding device 10 . For example, the crystal bonding device 10 has only one air hole, and the air hole is located at the axis of the crystal bonding device 10 . No matter how the number and distribution of pores change, basically step S200 and step S300 of these embodiments are quite similar, and both can form bonding waves and diffusion bonding waves. The above examples only illustrate the diversity of the number and distribution of pores, and are not intended to limit the scope of the present invention.

In step S400, as shown in FIG. 1A, FIG. 6 and FIG. 7, the sound wave 61 propagates along the surface of the die 20. Specifically, as shown in Figures 2A and 2B, the die-bonding device 10 is provided with a plurality of channels 17, and these channels 17 are evenly distributed in the die-bonding device 10; as shown in Figures 6 and 7, the air flow generated by the positive pressure 41 is After contacting the surface of the die 20, a sound wave 61 is generated. The sound wave 61 propagates along the surface of the die 20 in a gap 70 between the die bonding device 10 and the die 20, and then the sound wave 61 enters the die die 20. The channels 17 of the device 10 .

Step S500, as shown in FIG. 1A, FIG. 4, FIG. 6 and FIG. 7, senses the volume change degree of the sound wave 61 at different positions and obtains a plurality of sensing messages 81. Specifically, as shown in FIG. 2A and FIG. 2B , a plurality of sensors 80 are respectively disposed at the openings of the channels 17 ; since the sound wave 61 of the wind sound is an audible sound wave, the sensors 80 are microphones, which can Receives audible sound waves. As shown in Figure 6, when there are no cavities or particles between the die 20 and the substrate 50, the gap 70 will gradually become larger along the diffusion trend 60 of the bonding wave. The larger the gap 70, the smaller the sound wave 61 of the wind shear sound. The greater the volume change, so the volume change of the sound wave 61 of the wind cut sound passing through different channels 17 is V1 V2 V3 V4 V5. As shown in FIG. 7 , when bubbles are enclosed between the die 20 and the substrate 50 to form a cavity 71 (void) or some particles (not shown) adhere to the bottom surface of the die 20 , the die 20 will bulge upward. The raised portion 21 of the die 20 blocks or is close to one of the channels 17, so that the sound wave 61 cannot enter one of the channels 17, causing the volume to change. Therefore, the volume change of the sound wave 61 passing through different channels 17 is V1 V3 V4 V5 and V2 0. As shown in FIG. 4 , the sensors 80 respectively sense the volume changes of the sound waves 61 passing through the channels 17 and obtain a plurality of sensing messages 81 .

Step S600 , as shown in FIG. 1A , FIG. 4 , FIG. 6 and FIG. 7 , determines the change degree of the distance between the die 20 and the die-bonding device 10 based on the sensing information 81 . More specifically, the sensors 80 are electrically connected to a processing unit 90 . As shown in FIGS. 4 and 6 , when there are no voids or particles between the die 20 and the substrate 50 , the processing unit 90 receives the sensing messages 81 and determines the wind shears passing through different channels 17 based on the sensing messages 81 The volume change degree of sound wave 61 is V1 V2 V3 V4 V5, the processing unit 90 further determines V1 according to the volume change degree of the sound wave 61 of the wind sound passing through the different channels 17 V2 V3 V4 V5 determines the degree of change in the distance between the die 20 and the die-bonding device 10 . As shown in FIGS. 4 and 7 , when there are cavities 71 or particles between the die 20 and the substrate 50 , the processing unit 90 receives the sensing messages 81 and determines the sound waves passing through different channels 17 based on the sensing messages 81 The volume change degree of 61 is V1 V3 V4 V5 and V2 0 determines the degree of change in the distance between the die 20 and the die bonding device 10 .

In step S700 , as shown in FIGS. 1A , 4 , 6 and 7 , the processing unit 90 determines the diffusion trend 60 of the bonding wave based on the change in distance between the die 20 and the die-bonding device 10 .

In step S800 , as shown in FIG. 1B , FIG. 4 , and FIGS. 6 to 9 , the processing unit 90 determines whether the die 20 is closely bonded to the substrate 50 according to the diffusion trend 60 of the bonding wave. As shown in FIG. 8 , when there are no holes or particles between the die 20 and the substrate 50 , the diffusion trend 60 of the bonding wave is generally along the diagonal direction D1 of the die 20 or from one side of the die 20 . One side extends toward the other side in the directions D2 and D3, so that it can be determined that the die 20 and the substrate 50 are in close contact with each other. As shown in FIG. 9 , when there are cavities 71 or particles between the die 20 and the substrate 50 , the diffusion trend 60 of the bonding wave is generally along the diagonal direction D1A of the die 20 or from the diagonal direction D1A of the die 20 . The directions D2A and D3A from one side to the other side extend around the raised portion 21 , so it can be determined that the die 20 is not in close contact with the substrate 50 .

FIG. 10A is a schematic diagram of steps S200 to S800 of the second embodiment of the method of the present invention, which shows the difference in the amplitude change of the sound wave 61 . FIG. 10B shows that the bulge 21 of the crystal grain 20 affects the change degree and the degree of amplitude change of the sound wave 61 . A schematic diagram of the diffusion trend 60 of the combined wave. Figure 11A is a schematic diagram of steps S200 to S800 of the second embodiment of the method of the present invention, which shows the difference in the frequency change of the sound wave 61. Figure 11B shows the bulge 21 of the crystal grain 20. Schematic diagram of the degree of frequency change that affects the sound wave 61 and the diffusion trend 60 of the fit wave. As shown in FIGS. 10A to 11B , in terms of structure, the difference between the second embodiment and the first embodiment is that the acoustic wave generating device 100 is disposed outside the die bonding device 10 and the die 20 and generates the acoustic wave 61 . Generally speaking, sound waves 61 can be classified according to the frequency range, from low frequency to high frequency, into infrasound waves, audible sound waves, ultrasonic waves and megasonic waves. The sound wave generating device 100 can be configured as an infrasound wave generating device according to the frequency range of the generated sound wave 61. Listening to the sound wave generating device, the ultrasonic wave generating device and the megasonic wave generating device, the sensor 80 can be configured as an infrasonic wave sensor, an audible sound wave sensor, an ultrasonic wave sensor and a megasonic wave sensor according to the frequency range of the received sound wave 61 . Different types of sound wave generating devices 100 can generate different amplitudes and frequency ranges of sound waves 61 (for example, an ultrasonic wave generating device can generate amplitudes and frequency ranges of ultrasonic waves, and so on), and different types of sensors 80 can receive different sound waves 61 Amplitude and frequency range (e.g., an ultrasonic sensor is capable of receiving ultrasonic amplitude and frequency range, and so on).

As shown in FIGS. 10A to 11B , in terms of method, the difference between the second embodiment and the first embodiment lies in step S500 , sensing the amplitude or frequency change degree of the sound wave 61 at different positions and obtaining complex sensing information 81 . As shown in FIG. 10A , when there are no cavities or particles between the die 20 and the substrate 50 , the gap 70 will gradually become larger along the diffusion direction of the bonding wave. The larger the gap 70 is, the greater the amplitude change of the sound wave 61 will be. , so the amplitude changes of the sound waves 61 passing through different channels 17 are SA1>SA2>SA3>SA4>SA5. As shown in FIG. 10B , when there are cavities 71 or particles between the die 20 and the substrate 50 , the die 20 will bulge upward, and the bulge 21 of the die 20 blocks or is close to one of the channels 17 , so that the sound wave 61 cannot enter. One of the channels 17 causes the amplitude to change, so the amplitude change of the sound wave 61 passing through different channels 17 is SA1>SA3>SA4>SA5 and SA2=0. As shown in FIG. 11A , when there are no cavities or particles between the die 20 and the substrate 50 , the gap 70 will gradually become larger along the diffusion trend 60 of the bonding wave. The larger the gap 70 , the greater the frequency change of the sound wave 61 . is small, so the degree of frequency change of the sound waves 61 passing through different channels 17 is SF1<SF2<SF3<SF4<SF5. As shown in FIG. 11B , when there are cavities 71 or particles between the die 20 and the substrate 50 , the die 20 will bulge upward, and the bulge 21 of the die 20 blocks or is close to one of the channels 17 , so that the sound wave 61 cannot enter. One of the channels 17 causes a frequency change, so the frequency change degree of the sound wave 61 passing through different channels 17 is SF1<SF3<SF4<SF5 and SF2=0.

FIG. 12A is a schematic diagram of steps S200 to S800 of the third embodiment of the method of the present invention, which shows the difference in the amplitude change of the electromagnetic wave 62 . FIG. 12B shows that the bulge 21 of the crystal grain 20 affects the amplitude change and the degree of the electromagnetic wave 62 . A schematic diagram of the diffusion trend 60 of the combined wave. Figure 13A is a schematic diagram of steps S200 to S800 of the third embodiment of the method of the present invention, which shows the difference in the frequency change of the electromagnetic wave 62. Figure 13B shows the bulge 21 of the crystal grain 20. Schematic diagram of the degree of frequency change that affects the electromagnetic wave 62 and the diffusion trend 60 of the fit wave. As shown in FIGS. 12A to 13B , in terms of structure, the difference between the third embodiment and the second embodiment is that an electromagnetic wave generating device 110 is used instead of the sound wave generating device 100 , the electromagnetic wave generating device 110 generates an electromagnetic wave 62 , and the electromagnetic wave 62 is replaced Sonic 61. Generally speaking, the electromagnetic waves 62 can be classified according to the frequency range, from low frequency to high frequency into radio waves, megahertz radiation, microwaves, infrared rays, visible light, ultraviolet rays, X-rays and gamma rays. The electromagnetic wave generating device 110 can generate electromagnetic waves according to the frequency range. The 62 frequency range is configured as a radio wave generating device, a megahertz radiation generating device, a microwave generating device, an infrared generating device, a visible light generating device, an ultraviolet generating device, an X-ray generating device and a gamma ray generating device, and the sensor 80 can be configured according to the received The electromagnetic wave 62 frequency range is configured as radio wave sensor, megahertz radiation sensor, microwave sensor, infrared sensor, visible light sensor, ultraviolet sensor, X-ray sensor and gamma ray sensor . Different types of electromagnetic wave generating devices 110 can generate different amplitudes and frequency ranges of electromagnetic waves 62 (for example, visible light generating devices can generate amplitudes and frequency ranges of visible light, and so on), and different types of sensors 80 can receive corresponding electromagnetic waves 62 The amplitude and frequency range of the visible light sensor (for example, the amplitude and frequency range of the visible light sensor that can receive visible light, and so on).

As shown in FIGS. 12A to 13B , in terms of method, the difference between the third embodiment and the second embodiment is: step S500 , sensing the amplitude or frequency change degree of the electromagnetic wave 62 at different locations and obtaining complex sensing information 81 . As shown in FIG. 12A , when there are no holes or particles between the die 20 and the substrate 50 , the gap 70 will gradually become larger along the diffusion trend 60 of the bonding wave. The larger the gap 70 is, the greater the amplitude change of the electromagnetic wave 62 will be. is large, so the amplitude change degree of the electromagnetic wave 62 passing through different channels 17 is EA1 EA2 EA3 EA4 EA5. As shown in FIG. 12B , when there are cavities 71 or particles between the die 20 and the substrate 50 , the die 20 will bulge upward. The bulge 21 of the die 20 blocks or is close to one of the channels 17 so that the electromagnetic wave 62 cannot enter. One of the channels 17 causes the amplitude to change, so the amplitude change of the electromagnetic wave 62 passing through different channels 17 is EA1 EA3 EA4 EA5 and EA2 0. As shown in FIG. 13A , when there are no holes or particles between the die 20 and the substrate 50 , the gap 70 will gradually become larger along the diffusion trend 60 of the bonding wave. The larger the gap 70 is, the greater the frequency change of the electromagnetic wave 62 will be. is small, so the degree of frequency change of the electromagnetic waves 62 passing through different channels 17 is EF1 EF2 EF3 EF4 EF5. As shown in FIG. 13B , when there are cavities 71 or particles between the die 20 and the substrate 50 , the die 20 will bulge upward. The bulge 21 of the die 20 blocks or is close to one of the channels 17 so that the electromagnetic wave 62 cannot enter. One of the channels 17 causes the frequency to change, so the frequency change degree of the electromagnetic wave 62 passing through different channels 17 is EF1 EF3 EF4 EF5 and EF2 0.

To sum up, the method of the present invention can detect the solid state of the crystal using acoustic waves 61 or electromagnetic waves 62 and accurately identify which crystal grains 20 are closely adhered to the substrate 50 and which crystal grains 20 are not closely adhered to the substrate 50 . The industry can perform subsequent processing procedures on the die 20 that are in close contact with the substrate 50 , and sort out the die 20 that are not in close contact with the substrate 50 .

The above are only used to explain the preferred embodiments of the present invention, and are not intended to limit the present invention in any form. Therefore, any modifications or changes related to the present invention are made under the same spirit of the invention. , should still be included in the scope of protection intended by the present invention.

10:Crystal bonding device 101~104: Corner 11~14: stomata 15,16: Side 17:Channel 20:Grain 21: raised part 30: Vacuum device 31: Negative pressure 40:Gas supply device 41: Positive pressure 50:Substrate 60: The diffusion trend of fitting waves 61:Sound wave 62:Electromagnetic waves 70:Gap 71: Hollow 80: Sensor 81: Sensing message 90: Processing unit 100:Sound wave generating device 110:Electromagnetic wave generating device D1~D3,D1A~D3A: direction S100~S800: steps V1~V5: The volume of the wind sound wave SA1~SA5: The amplitude change of sound wave SF1~SF5: frequency change degree of sound waves EA1~EA5: The degree of amplitude change of electromagnetic waves EF1~EF5: Degree of frequency change of electromagnetic waves

Figures 1A and 1B are flow charts of the method of the present invention. Figure 2A shows a schematic diagram of the die-bonding device and sensor. Figure 2B shows a bottom view of the die attach device and sensor. Figure 3 shows a schematic diagram of the connection relationship between the air hole and the vacuum device and the gas supply device. Figure 4 shows a schematic diagram of the connection relationship between the sensor and the processing unit. Figures 5 and 6 are schematic diagrams of steps S100 to S800 in the first embodiment of the method of the present invention. Figure 7 shows a schematic diagram showing how the bulge of the grain affects the volume change of the sound wave and the diffusion trend of the fit wave. Figure 8 shows a schematic diagram of the diffusion trend of the bonding wave when there are no voids or particles between the die and the substrate. Figure 9 shows a schematic diagram of the diffusion trend of the bonding wave when there are voids or particles between the die and the substrate. Figure 10A is a schematic diagram of steps S200 to S800 of the second embodiment of the method of the present invention, which shows the difference in the amplitude change of the sound wave. Figure 10B shows a schematic diagram showing how the bulge portion of the grain affects the amplitude change of the sound wave and the diffusion trend of the bonding wave. FIG. 11A is a schematic diagram of steps S200 to S800 of the second embodiment of the method of the present invention, which shows the difference in the frequency change degree of the sound wave. Figure 11B shows a schematic diagram showing how the bulging portion of the grain affects the frequency change degree of the sound wave and the diffusion trend of the bonding wave. FIG. 12A is a schematic diagram of steps S200 to S800 of the third embodiment of the method of the present invention, which shows the difference in the amplitude change of the electromagnetic wave. Figure 12B shows a schematic diagram showing how the bulge portion of the crystal grain affects the amplitude change of the electromagnetic wave and the diffusion trend of the bonding wave. FIG. 13A is a schematic diagram of steps S200 to S800 of the third embodiment of the method of the present invention, which shows the difference in the frequency change degree of the electromagnetic wave. Figure 13B shows a schematic diagram showing how the bulging portion of the crystal grain affects the frequency change degree of the electromagnetic wave and the diffusion trend of the bonding wave.

S100~S700: steps

Claims (7)

A method of using sound waves or electromagnetic waves to detect the state of solid crystals, including the following steps: A local area of a die breaks away from a die-bonding device and contacts a substrate to form a bonding wave; The bonding wave spreads from a local area of the die to other areas of the die and has a diffusion tendency, causing the die to gradually separate from the die-bonding device and be fixed on the substrate; A sound wave or an electromagnetic wave propagates along the surface of the crystal grain; sensing the volume, amplitude or frequency changes of the sound wave at different locations, or sensing the amplitude or frequency changes of the electromagnetic waves at different locations, and obtaining plural sensing information; Determine the degree of change in the distance between the die and the die-bonding device based on the sensing information; Determine the diffusion trend of the bonding wave based on the change in distance between the die and the die-bonding device; and It is determined based on the diffusion trend of the bonding wave whether the crystal grain is closely bonded with the substrate. The method of using sound waves or electromagnetic waves to detect the state of a solid chip as described in claim 1, wherein the step of forming the bonding wave further includes: the solid chip device generates an airflow through a positive pressure to blow local areas of the die , causing local sections of the die to break away from the die-bonding device and flex and deform to contact the substrate. The method of using acoustic waves or electromagnetic waves to detect the state of a solid crystal as described in claim 2, wherein the step of propagating the acoustic wave or the electromagnetic wave along the surface of the crystal grain further includes: the acoustic wave or the electromagnetic wave along the surface of the crystal grain. Propagate in a gap between the die-bonding device and the die, and then the sound wave or the electromagnetic wave enters a plurality of channels of the die-bonding device; and wherein the volume or amplitude or frequency change of the sound wave at different locations is sensed , or the step of sensing the amplitude or frequency change degree of the electromagnetic wave at different locations further includes: a plurality of sensors respectively sensing the volume or amplitude or frequency change degree of the sound wave passing through the channels, or a plurality of sensors respectively sensing Measure the amplitude or frequency change of the electromagnetic wave passing through the channels, and obtain complex sensing information. The method of using acoustic waves or electromagnetic waves to detect the state of a solid crystal as described in claim 3, wherein the step of propagating the acoustic wave or the electromagnetic wave along the surface of the crystal grain further includes: the air flow generated by the positive pressure is in contact with the crystal grain. A sound wave of wind is generated after the surface of the particle. The method of using acoustic waves or electromagnetic waves to detect the state of a solid crystal as described in claim 3, wherein the step of propagating the acoustic wave or the electromagnetic wave along the surface of the crystal grain further includes: an acoustic wave generating device is disposed between the solid crystal device and the crystal grain. outside the grain and generates a sound wave. The method of using acoustic waves or electromagnetic waves to detect the state of a solid crystal as described in claim 3, wherein the step of propagating the acoustic wave or the electromagnetic wave along the surface of the crystal grain further includes: an electromagnetic wave generating device is disposed between the solid crystal device and the crystal grain. outside the grain and generate an electromagnetic wave. The method of using sound waves or electromagnetic waves to detect the state of a solid crystal as described in claim 1, wherein the step of determining the change in distance between the crystal grain and the solid crystal device further includes: a processing unit receiving the sensing information and based on The sensing information determines the volume, amplitude, or frequency changes of the sound waves at different locations, or determines the amplitude or frequency changes of the electromagnetic waves at different locations. The processing unit further determines the volume, amplitude, or frequency of the sound waves at different locations. The degree of change, or based on the degree of change in the amplitude or frequency of the electromagnetic wave at different locations, determine the degree of change in the distance between the crystal grain and the crystal bonding device; wherein the step of determining the diffusion trend of the bonding wave further includes: the processing The unit determines the diffusion trend of the bonding wave based on the change in distance between the die and the die-bonding device; and wherein the step of determining whether the die is closely adhered to the substrate further includes: the processing unit determines whether the die is closely adhered to the substrate. The diffusion trend of the combined wave determines whether the die is closely attached to the substrate.

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