CN117316788A - Method for detecting solid crystal state by utilizing sound wave or electromagnetic wave - Google Patents
Method for detecting solid crystal state by utilizing sound wave or electromagnetic wave Download PDFInfo
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- CN117316788A CN117316788A CN202210705992.2A CN202210705992A CN117316788A CN 117316788 A CN117316788 A CN 117316788A CN 202210705992 A CN202210705992 A CN 202210705992A CN 117316788 A CN117316788 A CN 117316788A
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- 239000013078 crystal Substances 0.000 title claims abstract description 54
- 238000000034 method Methods 0.000 title claims abstract description 35
- 239000007787 solid Substances 0.000 title description 3
- 239000000758 substrate Substances 0.000 claims abstract description 69
- 238000009792 diffusion process Methods 0.000 claims abstract description 40
- 238000000926 separation method Methods 0.000 claims abstract description 6
- 238000012545 processing Methods 0.000 claims description 21
- 230000001902 propagating effect Effects 0.000 claims description 8
- 238000010030 laminating Methods 0.000 claims 1
- 239000002245 particle Substances 0.000 description 19
- 239000011800 void material Substances 0.000 description 17
- 238000010586 diagram Methods 0.000 description 15
- 238000013459 approach Methods 0.000 description 5
- 238000001179 sorption measurement Methods 0.000 description 5
- 238000007664 blowing Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 230000005251 gamma ray Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
Abstract
The invention provides a method for detecting a die bonding state by utilizing sound waves or electromagnetic waves, which comprises the following steps: the local area of the crystal grain is separated from the crystal fixing device and contacts with the substrate to form a bonding wave; the bonding wave diffuses from the local area of the crystal grain to other areas of the crystal grain and has a diffusion trend, so that the crystal grain is gradually separated from the die bonding device and is fixed on the substrate; the acoustic wave or electromagnetic wave propagates along the surface of the grain; sensing the volume, amplitude or frequency variation degree of the sound waves at different positions, or sensing the amplitude or frequency variation degree of the electromagnetic waves at different positions, and obtaining sensing information; judging the degree of change of the separation distance between the crystal grain and the crystal fixing device according to the sensing information; judging the diffusion trend of the bonding wave according to the degree of the change of the separation distance between the crystal grain and the crystal fixing device; and judging whether the crystal grain is tightly attached to the substrate according to the diffusion trend of the attaching wave.
Description
Technical Field
The invention relates to a die bonding method, in particular to a method for detecting a die bonding state by utilizing sound waves or electromagnetic waves.
Background
Integrated circuits are fabricated on semiconductor wafers in a number of processes, the wafer being further divided into a plurality of dies. In other words, the die is a small integrated circuit body fabricated from semiconductor material without packaging. The divided crystal grains are orderly attached to a bearing device, then a bearing frame is responsible for conveying the bearing device, and then the crystal fixing device sequentially transfers the crystal grains to the substrate so as to facilitate the subsequent processing procedure.
Further, during the transfer of the die to the substrate, a local area of the die breaks away from the die attach device and contacts the substrate to form a bond wave (bond wave). The bonding wave diffuses from the local area of the die to the other areas of the die, so that the die gradually breaks away from the die bonding device and is fixed on the substrate.
However, the bottom surface of the die and the top surface of the substrate may be encapsulated together to form a void (void), or some particles may adhere to the bottom surface of the die, resulting in the bottom surface of the die not being tightly adhered to the top surface of the substrate. Once the die is not tightly attached to the substrate, the subsequent processing procedures of picking or identifying the die are easily affected by bubbles or particles, so that the yield of products produced by subsequent processing is reduced, and operators usually pick out the die which is not tightly attached to the substrate.
However, the number of dies on the substrate is large, and the size of the dies is small, so that it is difficult to precisely identify which dies are closely attached to the substrate and which dies are not closely attached to the substrate. Thus, there is essentially no way for the industry to pick out die that are not in close proximity to the substrate.
Disclosure of Invention
The invention mainly aims to provide a method for detecting a sticking crystalline state by utilizing sound waves or electromagnetic waves, which can accurately identify whether a crystal grain is closely attached to a substrate.
In order to achieve the above-mentioned object, the present invention provides a method for detecting a die bonding state by using acoustic waves or electromagnetic waves, comprising the following steps: a local area of a die is separated from a die bonding device and contacts a substrate to form a bonding wave; the bonding wave diffuses from the local area of the crystal grain to other areas of the crystal grain and has a diffusion trend, so that the crystal grain is gradually separated from the die bonding device and is fixed on the substrate; an acoustic wave or an electromagnetic wave propagates along the surface of the die; sensing the volume, amplitude or frequency variation degree of the sound wave at different positions, or sensing the amplitude or frequency variation degree of the electromagnetic wave at different positions and obtaining a plurality of sensing information; judging the degree of change of the separation distance between the crystal grain and the die bonding device according to the plurality of sensing information; judging the diffusion trend of the bonding wave according to the degree of the change of the separation distance between the crystal grain and the crystal fixing device; and judging whether the crystal grain is tightly attached to the substrate according to the diffusion trend of the attaching wave.
In some embodiments, the step of forming the conformable wave further comprises: the die bonding device generates an air flow by positive pressure to blow the local area of the die, so that the local area of the die is separated from the die bonding device and is deflected to contact the substrate.
In some embodiments, the step of propagating the acoustic or electromagnetic wave along the surface of the die further comprises: the sound wave or electromagnetic wave propagates along the surface of the crystal grain in a gap between the crystal grain and the crystal grain, and then enters a plurality of channels of the crystal grain fixing device; and wherein the step of sensing the degree of change in volume, amplitude or frequency of the acoustic wave at the different locations, or the degree of change in amplitude or frequency of the electromagnetic wave at the different locations, further comprises: the plurality of sensors sense the degree of change in volume, amplitude or frequency of the acoustic wave passing through the plurality of channels, respectively, or the plurality of sensors sense the degree of change in amplitude or frequency of the electromagnetic wave passing through the plurality of channels, respectively, and obtain a plurality of sensed information.
In some embodiments, the step of propagating the acoustic or electromagnetic wave along the surface of the die further comprises: the positive pressure generated air flow produces a wind-tangential acoustic wave after contacting the surface of the die.
In some embodiments, the step of propagating the acoustic or electromagnetic wave along the surface of the die further comprises: an acoustic wave generating device is arranged outside the die bonding device and the die and generates an acoustic wave.
In some embodiments, the step of propagating the acoustic or electromagnetic wave along the surface of the die further comprises: an electromagnetic wave generating device is arranged outside the die bonding device and the die and generates an electromagnetic wave.
In some embodiments, the step of determining the degree of variation in the distance separating the die from the die attach device further comprises: the processing unit receives the sensing information and judges the volume, amplitude or frequency change degree of the sound waves at different positions according to the sensing information, or judges the amplitude or frequency change degree of the electromagnetic waves at different positions, and the processing unit further judges the distance change degree of the crystal grains separated from the die bonding device according to the volume, amplitude or frequency change degree of the sound waves at different positions, or according to the amplitude or frequency change degree of the electromagnetic waves at different positions; wherein the step of determining the diffusion trend of the fitting wave further includes: the processing unit judges the diffusion trend of the bonding wave according to the degree of the change of the separation distance between the crystal grain and the crystal fixing device; and wherein the step of determining whether the die is in close proximity to the substrate further comprises: the processing unit judges whether the crystal grain is tightly attached to the substrate according to the diffusion trend of the attaching wave.
The invention has the effects that the method can utilize sound waves or electromagnetic waves to detect the die bonding state, and accurately identify which dies are tightly attached to the substrate and which dies are not tightly attached to the substrate.
Drawings
FIGS. 1A and 1B are flowcharts of methods of the present invention;
FIG. 2A shows a schematic diagram of a die attach apparatus and sensor;
FIG. 2B shows a bottom view of the die attach apparatus and sensor;
FIG. 3 is a schematic view showing the connection relationship of the air hole, the vacuum device and the gas supply device;
FIG. 4 shows a schematic diagram of the connection of the sensor to the processing unit;
FIGS. 5 and 6 are schematic diagrams of steps S100-S800 of a first embodiment of the method of the present invention;
FIG. 7 is a schematic view showing the degree of volume change of the sound wave affected by the ridge portion of the crystal grain and the diffusion trend of the fitting wave;
FIG. 8 is a graph showing the tendency of a bonding wave to spread when there are no voids or particles between the die and the substrate;
FIG. 9 is a schematic view showing the diffusion tendency of a bonding wave when voids or particles are present between a die and a substrate;
fig. 10A is a schematic diagram of steps S200 to S800 of the second embodiment of the method of the present invention, in which the difference in the degree of amplitude variation of the acoustic wave is shown;
FIG. 10B is a schematic view showing the extent to which the raised portions of the grains affect the amplitude variation of the acoustic wave and the diffusion tendency of the bonding wave;
fig. 11A is a schematic diagram of steps S200 to S800 of the second embodiment of the method of the present invention, in which the difference in the degree of frequency variation of the acoustic wave is displayed;
FIG. 11B is a schematic view showing the degree of frequency variation of the effect of the raised portions of the crystal grains on the sound wave and the diffusion trend of the fitting wave;
fig. 12A is a schematic diagram of steps S200 to S800 of the third embodiment of the method of the present invention, in which the difference in the degree of amplitude variation of the electromagnetic wave is shown;
fig. 12B is a schematic view showing the extent to which the raised portions of the crystal grains affect the amplitude variation of the electromagnetic wave and the diffusion tendency of the bonding wave;
fig. 13A is a schematic diagram of steps S200 to S800 of the third embodiment of the method of the present invention, in which the difference in the degree of frequency variation of electromagnetic waves is shown;
fig. 13B shows a schematic view showing how the raised portions of the crystal grains affect the degree of frequency variation of the electromagnetic wave and the diffusion tendency of the bonding wave.
Reference numerals illustrate:
10: a die bonding device;
101-104: corners;
11 to 14: air holes;
15, 16: a side edge;
17: a channel;
20: a crystal grain;
21: a bulge;
30: a vacuum device;
31: negative pressure;
40: a gas supply device;
41: positive pressure;
50: a substrate;
60: fitting the diffusion trend of the wave;
61: acoustic waves;
62: electromagnetic waves;
70: a slit;
71: a cavity;
80: a sensor;
81: sensing information;
90: a processing unit;
100: an acoustic wave generating device;
110: an electromagnetic wave generating device;
D1-D3, D1A-D3A: a direction;
S100-S800: a step of;
V1-V5: volume of sound wave of wind cutting sound;
SA1 to SA5: the degree of amplitude variation of the acoustic wave;
SF 1-SF 5: the degree of frequency variation of the sound wave;
EA1 to EA5: the degree of amplitude variation of electromagnetic waves;
EF1 to EF5: the degree of frequency variation of the electromagnetic wave.
Detailed Description
Embodiments of the present invention will be described in more detail below with reference to the drawings and reference numerals so as to enable those skilled in the art to practice the invention after studying the specification.
Referring to fig. 1A to 9, fig. 1A and 1B are flowcharts of the method of the present invention, fig. 2A shows a schematic view of the die bonding apparatus 10 and the sensor 80, fig. 2B shows a schematic view of the die bonding apparatus 10 and the sensor 80, fig. 3 shows a schematic view of the connection relationship of the air holes 11 to 14, the vacuum apparatus 30 and the gas supply apparatus 40, fig. 4 shows a schematic view of the connection relationship of the sensor 80 and the processing unit 90, fig. 5 and 6 are schematic views of steps S100 to S800 of the first embodiment of the method of the present invention, fig. 7 shows a schematic view of the degree of volume change of the bump 21 of the die 20 affecting the sound wave 61 and the diffusion trend 60 of the bonding wave, fig. 8 shows a schematic view of the diffusion trend 60 of the bonding wave when there is no void or particle between the die 20 and the substrate 50, and fig. 9 shows a schematic view of the diffusion trend 60 of the bonding wave when there is a void 71 or particle between the die 20 and the substrate 50. The invention provides a method for detecting a die bonding state by utilizing sound waves or electromagnetic waves, which comprises the following steps:
in step S100, as shown in fig. 1A and fig. 5, a die bonding apparatus 10 generates an adsorption force to adsorb a die 20 by a negative pressure 31. More specifically, as shown in fig. 2A and 2B, the die bonding apparatus 10 has four air holes 11 to 14, and the plurality of air holes 11 to 14 are distributed in four corners 101 to 104 of the die bonding apparatus 10; as shown in fig. 3, the plurality of air holes 11 to 14 are connected with a vacuum device 30 and a gas supply device 40; as shown in fig. 2B, 3 and 5, the vacuum device 30 pumps the air holes 11 to 14 to generate a negative pressure 31, and the die attach device 10 adsorbs four corners 101 to 104 of the die 20 by the adsorption force generated by the negative pressure 31, so that the periphery of the die 20 is closely attached to the periphery of the bottom surface of the die attach device 10. Since the periphery of the die 20 can be closely attached to the periphery of the bottom surface of the die bonding apparatus 10, there is no gap between the periphery of the die 20 and the periphery of the bottom surface of the die bonding apparatus 10, and the effect that the die 20 is adsorbed by the adsorption force due to the negative pressure 31 is prevented from being influenced by the external air.
In step S200, as shown in fig. 1A, 6 and 7, the die bonding apparatus 10 generates an air flow by a positive pressure 41 to blow the local area of the die 20, so that the local area of the die 20 is separated from the die bonding apparatus 10 and is deformed to contact a substrate 50, and a bonding wave (bond wave) is formed after the local area of the die 20 contacts the substrate 50. Step S200 of the first embodiment can be further divided into the following two implementations.
In the first embodiment, the local area of the die 20 is a corner of the die 20, and the die bonding device 10 generates an air flow by positive pressure 41 to blow the corner of the die 20, so that the corner of the die 20 is separated from the die bonding device 10 and is deformed to contact the substrate 50, and a bonding wave is formed after the corner of the die 20 contacts the substrate 50. More specifically, the vacuum device 30 stops sucking air from the air holes 11 at the corners 101 of the die bonding device 10, the air holes 11 stop adsorbing the corners of the die 20 by the suction force generated by the negative pressure 31, and the air supply device 40 starts blowing air to the air holes 11 at the corners 101 of the die bonding device 10 to generate the positive pressure 41, and the air holes 11 start generating air flow by the positive pressure 41 to blow the corners of the die 20. The vacuum device 30 continuously pumps the air holes 12-14 from the other corners 102-104 of the die bonding device 10, so that the air holes 12-14 from the other corners 102-104 of the die bonding device 10 still maintain the adsorption force generated by the negative pressure 31 to adsorb the other corners of the die 20. Thus, the die 20 can not only remain fixed to the die attach apparatus 10, but also ensure that the entire die 20 is deflected and protruded only at its corners, allowing the corners of the die 20 to contact the substrate 50 in a point contact manner. Because the corners of the die 20 contact the substrate 50 in a point contact manner, bonding forces are generated at the corners of the die 20 and adjacent thereto, which further form a bonding wave. More specifically, the vacuum device 30 sequentially stops exhausting the air holes 12-14 from the other corners 102-104 of the die bonding device 10, the air holes 12-14 sequentially stop providing the negative pressure 31 along the diagonal direction, the air supply device 40 sequentially starts blowing the air holes 12-14 from the other corners 102-104 of the die bonding device 10, the air holes 12-14 sequentially start providing the positive pressure 41 along the diagonal direction to generate the air flow to blow the other corners of the die 20, so that the other corners of the die 20 are sequentially blown by the air flow along the diagonal direction to generate a pressure difference fluctuation, and the pressure difference fluctuation can further enable the corners of the die 20 to form a bonding wave after contacting the substrate 50.
In the second embodiment, the local area of the die 20 is a side of the die 20, and the die attach device 10 generates an air flow by positive pressure 41 to blow the side of the die 20, so that the side of the die 20 is separated from the die attach device 10 and is deformed to contact the substrate 50, and a bonding wave is formed after the side of the die 20 contacts the substrate 50. More specifically, the vacuum device 30 stops exhausting the air holes 11, 12 at the two corners 101, 102 of the side edge 15 of the die bonding device 10, the air holes 11, 12 stop adsorbing the two corners of the side edge of the die 20 by the suction force generated by the negative pressure 31, the air supply device 40 starts blowing air to the two corners 101, 11, 12 of the side edge 15, 102 of the die bonding device 10 to generate the positive pressure 41, and the air holes 11, 12 start generating air flow by the positive pressure 41 to blow the two corners of the side edge of the die 20. The vacuum device 30 continuously pumps the air holes 13 and 14 at the two corners 103 and 104 of the other side 16 of the die attach device 10, so that the air holes 13 and 14 still maintain the adsorption force generated by the negative pressure 31 to adsorb the two corners of the other side of the die 20. Therefore, the die 20 can not only remain fixed to the die attach apparatus 10, but also ensure that the entire die 20 is deflected and protruded only to the side, so that the side of the die 20 can contact the substrate 50 in a line contact manner. Since the sides of the die 20 contact the substrate 50 in a line contact manner, bonding forces are generated at the sides of the die 20 and adjacent thereto, which further form a bonding wave. More specifically, the vacuum device 30 stops exhausting the air holes 13 and 14 at the two corners 103 and 104 of the other side 16 of the die bonding device 10, the air holes 13 and 14 stop providing the negative pressure 31, the air supply device 40 starts to blow the air holes 13 and 14 at the two corners 103 and 104 of the other side 16 of the die bonding device 10, and the air holes 13 and 14 start to provide the positive pressure 41 to generate the air flow to blow the other side of the die 20, so that the die 20 is blown by the air flow from one side to the other side to generate a pressure difference fluctuation, and the pressure difference fluctuation can further enable the side of the die 20 to form a bonding wave after contacting the substrate 50.
In step S300, as shown in fig. 1A, 6 and 7, the bonding wave diffuses from the local area of the die 20 to the other areas of the die 20 and has a diffusion trend 60, so that the die 20 gradually breaks away from the die bonding apparatus 10 and the die 20 is gradually fixed on the substrate 50. Step S300 of the first embodiment can be further divided into the following two implementations.
With respect to the first embodiment, the pressure difference fluctuation guides the spread of the bonding wave along a direction of a diagonal line of the die 20. With respect to the second embodiment, the pressure difference fluctuation guides the propagation of the bonding wave from one side of the die 20 to the other side.
In some embodiments, there may be a variety of possibilities for the number and distribution of the plurality of air holes. For example, the number of the air holes is six, wherein four air holes are distributed at four corners of the die bonding device 10, and the other two air holes are distributed at two opposite sides of the die bonding device 10. For example, the number of the air holes is nine, wherein four air holes are distributed at four corners of the die bonding device 10, and the other four air holes are distributed at four sides of the die bonding device 10 and are respectively located between the corners. For example, the number of the air holes is only two, and the air holes are distributed at two opposite corners or two opposite sides of the die bonding apparatus 10. For example, the die bonding apparatus 10 has only one air hole, and the position of the air hole is located at the axis of the die bonding apparatus 10. Basically, step S200 and step S300 of these embodiments are quite similar, regardless of the number and distribution of air holes, and can form a fitting wave and a diffusion fitting wave. The above examples merely exemplify the diversity of the number and distribution of air holes and are not intended to limit the scope of the present invention.
In step S400, as shown in fig. 1A, 6 and 7, an acoustic wave 61 propagates along the surface of the die 20. Specifically, as shown in fig. 2A and 2B, the die bonding apparatus 10 is provided with a plurality of channels 17, and the plurality of channels 17 are uniformly distributed in the die bonding apparatus 10; as shown in fig. 6 and 7, the air flow generated by the positive pressure 41 generates a wind-shear sound wave 61 after contacting the surface of the die 20, the sound wave 61 propagates along the surface of the die 20 in a gap 70 between the die 20 and the die 10, and then the sound wave 61 enters the plurality of channels 17 of the die 10.
In step S500, as shown in fig. 1A, 4, 6 and 7, the volume change degree of the acoustic wave 61 at different positions is sensed and a plurality of sensing information 81 is obtained. Specifically, as shown in fig. 2A and 2B, a plurality of sensors 80 are provided in the openings of the plurality of passages 17, respectively; since the sound wave 61 of the wind-cut sound is an audible sound wave, the sensor 80 is a microphone capable of receiving the audible sound wave. As shown in fig. 6, when there is no void or particle between the die 20 and the substrate 50, the larger the gap 70 is, the larger the volume change degree of the sound wave 61 of the wind-cut sound is, and thus the volume change degree of the sound wave 61 of the wind-cut sound passing through the different channels 17 is V1> V2> V3> V4> V5, because the gap 70 gradually increases along the diffusion trend 60 of the bonding wave. As shown in fig. 7, when the die 20 and the substrate 50 together enclose the air bubble to form a cavity 71 (void) or some particles (not shown) adhere to the bottom surface of the die 20, the die 20 bulges upward, and the bulge 21 of the die 20 blocks or approaches one of the channels 17, so that the sound wave 61 cannot enter one of the channels 17, resulting in a volume change, and thus the volume change of the sound wave 61 passing through the different channels 17 is V1> V3> V4> V5 and v2=0. As shown in fig. 4, the plurality of sensors 80 sense the degree of change in volume of the acoustic wave 61 passing through the plurality of channels 17, respectively, and obtain a plurality of sensing information 81.
In step S600, as shown in fig. 1A, 4, 6 and 7, the degree of change in the distance between the die 20 and the die bonding apparatus 10 is determined according to the plurality of sensing information 81. More specifically, the plurality of sensors 80 are electrically connected to a processing unit 90. As shown in fig. 4 and 6, when there is no void or particle between the die 20 and the substrate 50, the processing unit 90 receives the plurality of sensing information 81 and determines the degree of change in the volume of the sound wave 61 of the wind-cut sound passing through the different channels 17 to be V1> V2> V3> V4> V5 based on the plurality of sensing information 81, and the processing unit 90 further determines the degree of change in the distance of the die 20 from the die-bonding apparatus 10 based on the degree of change in the volume of the sound wave 61 of the wind-cut sound passing through the different channels 17 to be V1> V2> V3> V4> V5. As shown in fig. 4 and 7, when there is a void 71 or a particle between the die 20 and the substrate 50, the processing unit 90 receives the plurality of sensing information 81 and determines the degree of change in the volume of the acoustic wave 61 passing through the different channels 17 to be V1> V3> V4> V5 and v2=0 from the plurality of sensing information 81 to determine the degree of change in the distance of the die 20 from the die bonding apparatus 10.
In step S700, as shown in fig. 1A, 4, 6 and 7, the processing unit 90 determines the diffusion trend 60 of the bonding wave according to the degree of change in the distance between the die 20 and the die bonding apparatus 10.
In step S800, as shown in fig. 1B, 4 and 6 to 9, the processing unit 90 determines whether the die 20 is closely attached to the substrate 50 according to the diffusion trend 60 of the attaching wave. As shown in fig. 8, when there is no void or particle between the die 20 and the substrate 50, the diffusion trend 60 of the bonding wave extends substantially along the direction D1 of the diagonal line of the die 20 or the directions D2 and D3 from one side to the other side of the die 20, so that it can be determined that the die 20 is tightly bonded to the substrate 50. As shown in fig. 9, when the cavity 71 or the fine particle is present between the die 20 and the substrate 50, the diffusion tendency 60 of the bonding wave extends substantially along the direction D1A of the diagonal line of the die 20 or along the directions D2A and D3A from one side to the other side of the die 20 around the bump 21, and it can be determined that the die 20 is not tightly bonded to the substrate 50.
Fig. 10A is a schematic diagram of steps S200 to S800 of the second embodiment of the method of the present invention, in which the difference in the degree of change in the amplitude of the acoustic wave 61 is displayed, fig. 10B is a schematic diagram showing that the raised portion 21 of the die 20 affects the degree of change in the amplitude of the acoustic wave 61 and the diffusion trend 60 of the bonding wave, fig. 11A is a schematic diagram of steps S200 to S800 of the second embodiment of the method of the present invention, in which the difference in the degree of change in the frequency of the acoustic wave 61 is displayed, and fig. 11B is a schematic diagram showing that the raised portion 21 of the die 20 affects the degree of change in the frequency of the acoustic wave 61 and the diffusion trend 60 of the bonding wave. As shown in fig. 10A to 11B, the second embodiment differs from the first embodiment in terms of structure in that: an acoustic wave generating device 100 is disposed outside the die attach device 10 and the die 20 and generates an acoustic wave 61. In general, the acoustic waves 61 may be classified by frequency ranges, from low frequency to high frequency, into an infrasonic wave, an audible acoustic wave, an ultrasonic wave, and a megasonic wave, the acoustic wave generating apparatus 100 may be configured as an infrasonic wave generating apparatus, an audible acoustic wave generating apparatus, an ultrasonic wave generating apparatus, and a megasonic wave generating apparatus according to the frequency ranges of the generated acoustic waves 61, the sensor 80 may be configured as an infrasonic wave sensor, an audible acoustic wave sensor, an ultrasonic wave sensor, and a megasonic wave sensor according to the frequency ranges of the received acoustic waves 61, the different types of acoustic wave generating apparatus 100 may be capable of generating different acoustic wave 61 amplitudes and frequency ranges (e.g., the ultrasonic wave generating apparatus may be capable of generating ultrasonic wave amplitudes and frequency ranges, and the like), the different types of sensor 80 may be capable of receiving different acoustic wave 61 amplitudes and frequency ranges (e.g., the ultrasonic wave sensor may be capable of receiving ultrasonic wave amplitudes and frequency ranges, and the like).
As shown in fig. 10A to 11B, in terms of the method, the second embodiment differs from the first embodiment in that: step S500 senses the amplitude or frequency variation degree of the acoustic wave 61 at different positions and obtains a plurality of sensing information 81. As shown in fig. 10A, when there is no void or particle between the die 20 and the substrate 50, the larger the gap 70 is, the larger the amplitude variation degree of the acoustic wave 61 is, the larger the gap 70 becomes along the diffusion trend 60 of the bonding wave, and therefore the amplitude variation degree of the acoustic wave 61 passing through the different channels 17 is SA1> SA2> SA3> SA4> SA5. As shown in fig. 10B, when there is a void 71 or a particle between the die 20 and the substrate 50, the die 20 bulges upward, and the bulge 21 of the die 20 blocks or approaches one of the channels 17, so that the sound wave 61 cannot enter one of the channels 17, resulting in a change in amplitude, and thus the amplitude of the sound wave 61 passing through the different channels 17 changes to a degree of SA1> SA3> SA4> SA5 and SA2 = 0. As shown in fig. 11A, when there is no void or particle between the die 20 and the substrate 50, the degree of frequency change of the acoustic wave 61 through the different channels 17 is SF1< SF2< SF3< SF4< SF5, because the larger the gap 70 is, the smaller the degree of frequency change of the acoustic wave 61 is, the larger the gap 70 is along the diffusion trend 60 of the bonding wave. As shown in fig. 11B, when there is a void 71 or a particle between the die 20 and the substrate 50, the die 20 bulges upward, and the bulge 21 of the die 20 blocks or approaches one of the channels 17, so that the sound wave 61 cannot enter one of the channels 17, resulting in a frequency change, and thus the frequency change of the sound wave 61 passing through the different channels 17 is SF1< SF3< SF4< SF5 and SF2 = 0.
Fig. 12A is a schematic diagram of steps S200 to S800 of the third embodiment of the method of the present invention, in which the difference in the degree of amplitude variation of the electromagnetic wave 62 is displayed, fig. 12B is a schematic diagram showing that the raised portion 21 of the die 20 affects the degree of amplitude variation of the electromagnetic wave 62 and the diffusion trend 60 of the bonding wave, fig. 13A is a schematic diagram of steps S200 to S800 of the third embodiment of the method of the present invention, in which the difference in the degree of frequency variation of the electromagnetic wave 62 is displayed, and fig. 13B is a schematic diagram showing that the raised portion 21 of the die 20 affects the degree of frequency variation of the electromagnetic wave 62 and the diffusion trend 60 of the bonding wave. As shown in fig. 12A to 13B, the third embodiment differs from the second embodiment in terms of structure in that: the acoustic wave generating device 100 is replaced by an electromagnetic wave generating device 110, the electromagnetic wave generating device 110 generates an electromagnetic wave 62, and the electromagnetic wave 62 replaces the acoustic wave 61. In general, the electromagnetic wave 62 may be classified according to frequency ranges from low frequency to high frequency, and is classified into radio waves, megahertz radiation, microwaves, infrared rays, visible light, ultraviolet rays, X-rays, and gamma rays, and the electromagnetic wave generating device 110 may be configured as radio wave generating devices, megahertz radiation generating devices, microwave generating devices, infrared ray generating devices, visible light generating devices, ultraviolet ray generating devices, X-ray generating devices, and gamma ray generating devices according to the frequency ranges of the generated electromagnetic wave 62, and the sensor 80 may be configured as radio wave sensors, megahertz radiation sensors, microwave sensors, infrared ray sensors, visible light sensors, ultraviolet ray sensors, X-ray sensors, and gamma ray sensors according to the frequency ranges of the received electromagnetic wave 62. Different types of electromagnetic wave generating devices 110 can generate different electromagnetic wave 62 amplitude and frequency ranges (e.g., visible light generating devices can generate visible light amplitude and frequency ranges, and so forth), and different types of sensors 80 can receive corresponding electromagnetic wave 62 amplitude and frequency ranges (e.g., visible light sensors 80 can receive visible light amplitude and frequency ranges, and so forth).
As shown in fig. 12A to 13B, in terms of the method, the third embodiment differs from the second embodiment in that: step S500 senses the amplitude or frequency variation degree of the electromagnetic wave 62 at different positions and obtains a plurality of sensing information 81. As shown in fig. 12A, when there is no void or particle between the die 20 and the substrate 50, the larger the gap 70 is, the larger the amplitude variation of the electromagnetic wave 62 is, the larger the gap 70 is along the diffusion trend 60 of the bonding wave, and therefore the amplitude variation of the electromagnetic wave 62 passing through the different channels 17 is EA1> EA2> EA3> EA4> EA5. As shown in fig. 12B, when there is a void 71 or a particle between the die 20 and the substrate 50, the die 20 bulges upward, and the bulge 21 of the die 20 blocks or approaches one of the channels 17, so that the electromagnetic wave 62 cannot enter one of the channels 17, resulting in a change in amplitude, and thus the amplitude of the electromagnetic wave 62 passing through the different channels 17 changes to an extent EA1> EA3> EA4> EA5 and EA2 = 0. As shown in fig. 13A, when there is no void or particle between the die 20 and the substrate 50, the degree of frequency change of the electromagnetic wave 62 passing through the different channels 17 is EF1< EF2< EF3< EF4< EF5, because the larger the gap 70 is, the smaller the degree of frequency change of the electromagnetic wave 62 is, the larger the gap 70 is along the diffusion trend 60 of the bonding wave is. As shown in fig. 13B, when there is a void 71 or a particle between the die 20 and the substrate 50, the die 20 bulges upward, and the bulge 21 of the die 20 blocks or approaches one of the channels 17, such that the electromagnetic wave 62 cannot enter one of the channels 17, resulting in a frequency change, and thus the frequency of the electromagnetic wave 62 passing through the different channels 17 changes to a degree of EF1< EF3< EF4< EF5 and ef2=0.
In summary, the method of the present invention can detect the solid crystalline state by using the acoustic wave 61 or the electromagnetic wave 62, and accurately identify which dies 20 are closely attached to the substrate 50 and which dies 20 are not closely attached to the substrate 50. The industry is able to perform subsequent processing procedures on the dies 20 that are not in close contact with the substrate 50, and pick out the dies 20 that are not in close contact with the substrate 50.
The above description is merely illustrative of the preferred embodiments of the present invention and is not intended to limit the present invention in any way, and therefore, any modifications or variations of the present invention that fall within the spirit of the invention are intended to be included in the scope of the present invention.
Claims (7)
1. A method for detecting a die bonding state by using sound waves or electromagnetic waves, which is characterized by comprising the following steps:
a local area of a die is separated from a die bonding device and contacts a substrate to form a bonding wave;
the bonding wave diffuses from the local area of the crystal grain to the other areas of the crystal grain and has a diffusion trend, so that the crystal grain gradually breaks away from the die bonding device and is fixed on the substrate;
an acoustic wave or an electromagnetic wave propagates along the surface of the die;
sensing the degree of change in volume, amplitude or frequency of the acoustic wave at different positions, or sensing the degree of change in amplitude or frequency of the electromagnetic wave at different positions, and obtaining a plurality of sensing information;
determining the degree of change of the distance between the crystal grain and the die bonding device according to the plurality of sensing information;
judging the diffusion trend of the laminating wave according to the degree of change of the distance between the crystal grain and the crystal fixing device; and
and judging whether the crystal grain is tightly attached to the substrate according to the diffusion trend of the attaching wave.
2. The method for detecting a die bonding state using an acoustic wave or an electromagnetic wave according to claim 1, wherein the step of forming the fitting wave further comprises: the die bonding device generates an air flow by positive pressure to blow the local area of the die, so that the local area of the die is separated from the die bonding device and is deformed in a flexing way so as to contact the substrate.
3. The method for detecting a die bonding state using an acoustic wave or an electromagnetic wave according to claim 2, wherein the step of propagating the acoustic wave or the electromagnetic wave along the surface of the crystal grain further comprises: the sound wave or the electromagnetic wave propagates along the surface of the crystal grain in a gap between the crystal grain and the crystal grain, and then the sound wave or the electromagnetic wave enters a plurality of channels of the crystal grain fixing device; and wherein the step of sensing the degree of change in volume, amplitude or frequency of the acoustic wave at different locations, or the degree of change in amplitude or frequency of the electromagnetic wave at different locations, further comprises: a plurality of sensors sense the degree of change in volume, amplitude, or frequency of the acoustic wave passing through the plurality of channels, respectively, or a plurality of sensors sense the degree of change in amplitude or frequency of the electromagnetic wave passing through the plurality of channels, respectively, and obtain a plurality of sensed information.
4. The method of detecting a die bonding state using an acoustic wave or an electromagnetic wave according to claim 3, wherein the step of propagating the acoustic wave or the electromagnetic wave along the surface of the die further comprises: the air flow generated by the positive pressure generates a wind-shear sound wave after contacting the surface of the crystal grain.
5. The method of detecting a die bonding state using an acoustic wave or an electromagnetic wave according to claim 3, wherein the step of propagating the acoustic wave or the electromagnetic wave along the surface of the die further comprises: an acoustic wave generating device is arranged outside the die bonding device and the die and generates an acoustic wave.
6. The method of detecting a die bonding state using an acoustic wave or an electromagnetic wave according to claim 3, wherein the step of propagating the acoustic wave or the electromagnetic wave along the surface of the die further comprises: an electromagnetic wave generating device is arranged outside the die bonding device and the die and generates an electromagnetic wave.
7. The method for detecting a die bonding state using an acoustic wave or an electromagnetic wave according to claim 1, wherein the step of determining a degree of change in a distance by which the die is separated from the die bonding apparatus further comprises: a processing unit receives the sensing information and judges the volume, amplitude or frequency variation degree of the sound wave at different positions according to the sensing information, or judges the amplitude or frequency variation degree of the electromagnetic wave at different positions, and the processing unit further judges the distance variation degree of the crystal grain and the crystal fixing device according to the volume, amplitude or frequency variation degree of the sound wave at different positions, or according to the amplitude or frequency variation degree of the electromagnetic wave at different positions; wherein the step of determining the diffusion trend of the fitting wave further includes: the processing unit judges the diffusion trend of the bonding wave according to the degree of change of the separation distance between the crystal grain and the crystal fixing device; and wherein the step of determining whether the die is in close proximity to the substrate further comprises: the processing unit judges whether the crystal grain is tightly attached to the substrate according to the diffusion trend of the attaching wave.
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| CN202210705992.2A CN117316788A (en) | 2022-06-21 | 2022-06-21 | Method for detecting solid crystal state by utilizing sound wave or electromagnetic wave |
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| CN202210705992.2A CN117316788A (en) | 2022-06-21 | 2022-06-21 | Method for detecting solid crystal state by utilizing sound wave or electromagnetic wave |
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