TW202343603A - Method for manufacturing connection structure and method for transfer individualized adhesive film - Google Patents

Abstract

Provided are a method for manufacturing a connection structure and a transfer method for a singulated adhesive film, whereby productivity can be improved even when unevenness is present on a substrate. The present invention comprises: an arrangement step in which individual pieces of an adhesive film are arranged on a base material with an elastic resin layer interposed therebetween; a transfer step in which the base material is pressed onto a substrate, and the individual pieces of the adhesive film arranged on the elastic resin layer are transferred to the substrate; and a mounting step in which an electronic component is mounted on an individual piece of the adhesive film transferred to the substrate. The size of each individual piece is 200 [mu]m or less, and a peeling force of the adhesive film for the elastic resin layer is less than the peeling force of the adhesive film for the substrate. Through this, excellent transferability of an individual piece of adhesive film is obtained even for a base material on which unevenness is present, the unevenness including steps such as wiring and an insulation film on the wiring surface, and productivity can be improved.

Description

Manufacturing method of connected structure and transfer method of single-piece adhesive film

This technology relates to a method of manufacturing a single-piece connection structure using an adhesive film and a method of transferring the single-piece adhesive film.

In recent years, micro-LEDs have been actively developed as next-generation displays between LCD (Liquid Crystal Display) and OLED (Organic Light Emitting Diode). As an issue of micro LED (Light Emitting Diode), a technology called mass transfer is required, that is, mounting micro-sized LEDs to the panel substrate, and various parties are studying this technology.

As the current main method of mass transfer, the laser lift-off method (LLO method), which uses a laser-induced forward transfer (LIFT) device to transfer LED chips to a substrate, can be cited. By pre-attaching an adhesive film, conductive film, Anisotropic Conductive Film (ACF), etc. to the electrode surface of the LED chip, and then transferring the LED chip to the substrate using the LLO method, productivity can be improved.

However, when there are irregularities including step differences such as wiring and an insulating film on the wiring surface on the substrate, there is a risk that the transfer rate of the LED chip will decrease and productivity will decrease if the LLO rule is used. [Prior technical literature] [Patent Document]

[Patent Document 1] Japanese Patent Application Publication No. 2020-145243

[Problem to be solved by the invention]

This technology was proposed in view of the above-mentioned conventional circumstances, and aims to provide a method for manufacturing a connected structure and a method for transferring a single-piece adhesive film that can improve productivity even when there are unevenness on the substrate. [Technical means to solve problems]

The manufacturing method of the connected structure of the present technology includes: an arrangement step, which arranges the individual pieces of the adhesive film on the base material through the elastic resin layer; and a transfer step, which presses the above-mentioned base material against the substrate to arrange the Transferring a single piece of the adhesive film of the elastic resin layer to the above-mentioned substrate; and a mounting step of mounting electronic components on a single piece of the adhesive film transferred to the above-mentioned substrate; and the size of the above-mentioned single piece is 200 μm or less The peeling force of the adhesive film to the elastic resin layer is smaller than the peeling force of the adhesive film to the substrate.

The transfer method of the single-piece adhesive film of this technology includes: an arrangement step, which is to arrange the single pieces of the adhesive film on the base material through the elastic resin layer; and a transfer step, which is to press the above-mentioned base material against The substrate is to transfer a single piece of the adhesive film arranged on the elastic resin layer to the above-mentioned substrate; and the size of the above-mentioned single piece is 200 μm or less, and the peeling force of the above-mentioned adhesive film on the above-mentioned elastic resin layer is smaller than the above-mentioned adhesive film on the above-mentioned substrate. The peeling force. [Effects of the invention]

According to this technology, good transferability of a single piece of adhesive film can be obtained even for a substrate with uneven unevenness such as wiring and an insulating film on the surface of the wiring, and productivity can be improved.

Hereinafter, embodiments of the present invention will be described in detail in the following order with reference to the drawings. 1. Manufacturing method of connecting structure 2. Single-piece adhesive film 3.Examples

＜1. Manufacturing method of connected structure＞ The manufacturing method of the connected structure of this embodiment includes: an arranging step of arranging the individual pieces of the adhesive film on the base material through the elastic resin layer; and a transfer step of pressing the base material against the substrate to arrange the Transferring the single piece of the adhesive film of the elastic resin layer to the substrate; and the installation step, which is to install electronic components on the single piece of the adhesive film transferred to the substrate; and the size of the single piece is less than 200 μm, and the adhesive film is The peeling force of the elastic resin layer is smaller than the peeling force of the adhesive film from the substrate. This enables good transferability of a single piece of adhesive film to be obtained even on a substrate containing step-like unevenness such as wiring and an insulating film on the surface of the wiring, thereby improving productivity.

<First Embodiment> Hereinafter, the arrangement step (A1), the transfer step (B1), and the mounting step (C1) in the manufacturing method of the connected structure of the first embodiment will be described with reference to FIGS. 1 to 3 .

[Arrangement step (A1)] Figures 1 and 2 are diagrams for explaining the arrangement steps of the first embodiment. Figure 1 is a diagram showing the steps of forming a single piece of the adhesive film by laser ablation. Figure 2 shows the steps of forming the adhesive film. Diagram showing the steps of arranging a single piece on the elastic resin layer. As shown in FIGS. 1 and 2 , in the arrangement step (A1), the individual pieces 12A of the adhesive film 12 are arranged on the base material 21 via the elastic resin layer 22 .

[Laser ablation removal] First, as shown in FIG. 1 , a part of the adhesive film 12 formed on the translucent substrate 11 that is translucent to laser light is removed by laser ablation, and the adhesive film is arranged on the translucent substrate 11 Single piece of membrane 12 12A.

The upper limit of the size of a single chip 12A may be 200 μm or less, preferably 150 μm or less, more preferably 50 μm or less, and even more preferably 20 μm or less. In addition, the lower limit of the size of the single chip 12A is preferably 50 μm or more, more preferably 30 μm or more, and further preferably 5 μm or more. Here, when the size of the single piece 12A is larger than, for example, a substantially rectangular shape, the vertical width or the horizontal width is larger. Furthermore, the shape of the single piece 12A may be at least one selected from the group consisting of a polygon with obtuse angles, a polygon with curved corners, an ellipse, an oval, and a circle. Since the shape of the single piece 12A has fewer sharp angles, the transferability of the single piece can be improved.

The arrangement of the single chip 12A is not particularly limited. For example, when the light-emitting elements are arranged in units of sub-pixels (sub-pixels), the arrangement method of the sub-pixels may include stripe arrangement, mosaic arrangement, etc. in the case of RGB. Triangular arrangement etc. Stripe arrangement arranges RGB in vertical stripes to achieve high definition. In addition, the mosaic arrangement is an oblique arrangement of RGB colors of the same color, which can obtain a more natural image than the stripe arrangement. In addition, the triangular arrangement arranges the RGB in a triangle, and each point is offset by half a pitch per field to obtain a natural image display.

In addition, the lower limit of the distance between the individual chips 12A is preferably 3 μm or more, more preferably 5 μm or more, and further preferably 10 μm or more. In addition, the upper limit of the 12A distance between single chips is not particularly limited, but is preferably 3000 μm or less, more preferably 1000 μm or less, and further preferably 500 μm or less. When the distance between the individual pieces 12A is too small, the method of attaching the adhesive film 12 to the entire surface of the substrate 31 is more suitable. When the distance between the individual pieces 12A is too large, the conventional method is used to attach the individual pieces 12A. The method of attaching to a specific position on the substrate 31 is more suitable.

The translucent base material 11 only needs to be a base material that is transparent to laser light. Among them, quartz glass with high light transmittance over the entire wavelength is preferred. In addition, as the translucent base material 11, one in which at least the surface on the film-adhering side has been peeled off with, for example, polysiloxane resin can be suitably used.

The subsequent film 12 is a resin layer formed on the translucent base material 11 by using known methods such as mixing, coating, and drying. The adhesive film 12 is not particularly limited, and examples thereof include conductive films, anisotropic conductive films (ACF: Anisotropic Conductive Film), adhesive films (NCF: Non Conductive Films), and the like.

In addition, a release material may be provided between the translucent base material 11 and the adhesive film 12 . The release material only needs to have absorption properties for the wavelength of the laser light, and a shock wave is generated by the irradiation of the laser light, which bounces away from the removed portion 12B of the film 12 . Examples of the releasing material include polyimide. The thickness of the release material is, for example, 1 μm or more.

As shown in FIG. 1 , laser light is irradiated from the translucent base material 11 side to remove the removed portion 12B, thereby forming a single piece 12A. For example, a laser induced forward transfer (LIFT) device can be used to remove the removed portion 12B.

The laser-induced forward transfer device includes, for example: a telescope that converts the pulse laser light emitted from the laser device into parallel light; a shaping optical system that shapes the spatial intensity distribution of the pulse laser light passing through the telescope to make it uniform; The mask, which allows the pulsed laser light shaped by the shaping optical system to pass through in a specific pattern; the field lens, which is located between the shaping optical system and the mask; and the projection lens, which transmits the patterned laser light that has passed through the mask. The incident light is reduced and projected onto the donor substrate; and the translucent base material 11 on which the adhesive film 12 is formed as the donor substrate is held on the donor stage.

As the laser device, for example, an excimer laser that oscillates laser light with a wavelength of 180 nm to 360 nm can be used. The oscillation wavelength of the excimer laser is, for example, 193, 248, 308, and 351 nm, and can be appropriately selected from these oscillation wavelengths according to the light absorption of the material of the adhesive film 12 . In addition, when a release material is provided between the translucent base material 11 and the adhesive film 12, the oscillation wavelength can be appropriately selected from these oscillation wavelengths based on the light absorbency of the material of the release material.

The mask uses a pattern in which window frames of specific sizes are formed at specific intervals so that the projection on the boundary surface between the translucent base material 11 and the adhesive film 12 becomes a desired arrangement of laser light. For the mask, for example, a pattern is implemented by chromium plating. The portion of the window that is not chrome plated allows laser light to pass through, and the portion that is chrome plated blocks laser light.

The emitted light from the laser device is incident on the telescope optical system and propagates to the shaping optical system. The laser light incident on the shaping optical system is adjusted by the telescope optical system so that it becomes approximately parallel light at any position within the movement range of the X-axis of the donor stage. Therefore, the laser light is always directed at Approximately the same size and the same angle (vertical) incident on the shaping optical system.

The laser light that has passed through the shaping optical system is incident on the mask through a field lens that is combined with a projection lens to form an image-side telecentric reduction projection optical system. The propagation direction of the laser light that has passed through the mask pattern is changed vertically downward by the epi mirror, and then enters the projection lens. The laser light emitted from the projection lens is incident from the side of the translucent base material 11 and accurately projected in the reduced size of the mask pattern to a specific position of the adhesive film 12 formed on its surface (lower surface).

The laser energy intensity in laser irradiation is not particularly limited and can be appropriately selected according to the purpose. It is preferably 5% or more and 100% or less, and more preferably 5% or more and 50% or less. The so-called laser energy intensity refers to the intensity represented by the output percentage when the laser irradiation intensity of 10,000 mJ/ ^cm2 is set to 100. For example, the so-called laser energy intensity of 10% refers to the laser irradiation intensity of 1,000 mJ/cm ² .

In addition, the number of times of laser irradiation is not particularly limited and can be appropriately selected depending on the purpose. Preferably, it is 1 to 10 times. The total laser irradiation intensity in laser irradiation is preferably 500 mJ/cm ² or more and 10,000 mJ/cm ² or less, more preferably 1,000 mJ/cm ² or more and 5,000 mJ/cm ² or less. Here, the total laser irradiation intensity refers to the irradiation intensity calculated as the sum of n laser irradiation intensities during laser irradiation. Here, "n" represents the number of laser irradiations.

As the laser irradiation device, LMT-200 (manufactured by TORAY ENGINEERING Co., Ltd.), C.MSL-LLO1.001 (manufactured by TAKANO Co., Ltd.), DFL7560L (manufactured by DISCO Co., Ltd.) and other devices capable of ablation using pulse laser can be used.

By using this laser-induced forward transfer device, a shock wave can be generated in the adhesive film 12 irradiated with laser light at the interface between the translucent base material 11 and the adhesive film 12, and the removed portion 12B can be removed from the translucent base material. The material 11 is peeled off and removed, so that the individual pieces 12A of the adhesive film 12 can be arranged on the translucent base material 11 with high precision and efficiency.

Furthermore, when a laser-induced forward transfer device is used to produce a single chip, the reaction rate of the single chip is preferably 25% or less, more preferably 20% or less, and still more preferably 15% or less. Thereby, excellent transferability can be obtained. Furthermore, the reaction rate of the adhesive film before laser irradiation and the single piece obtained after laser irradiation can be determined from the reduction rate of the reactive groups using FT-IR, for example. For example, in the case of an adhesive film utilizing the reaction of an epoxy compound, the sample is irradiated with infrared rays, the IR spectrum is measured, and the methyl group (near 2930 cm ^-1 ) and epoxy group (near 914 cm ^-1 ) of the IR spectrum are measured. The peak height is calculated according to the following formula using the ratio of the peak height of the epoxy group to the peak height of the methyl group before and after the reaction (for example, before and after laser irradiation). The reaction rate can also be determined from the original piece of single piece.

Reaction rate (%) = {1-(a/b)/(A/B)}×100 In the above formula, A is the peak height of the epoxy group before the reaction, B is the peak height of the methyl group before the reaction, a is the peak height of the epoxy group after the reaction, and b is the peak height of the methyl group after the reaction. Furthermore, when there are other peaks superimposed on the epoxy peak, the peak height of the completely hardened sample (reaction rate 100%) can be set to 0%.

[Transfer a single piece from a translucent base material to a transfer material] Next, as shown in FIG. 2 , the single piece 12A of the adhesive film 12 arranged on the translucent base material 11 is transferred to the elastic resin layer 22 on the base material 21 . The base material 21 and the elastic resin layer 22 constitute a transfer material, and the transfer material transfers the single piece 12A of the adhesive film 12 from the translucent base material 11 .

The base material 21 is a support film that supports the elastic resin layer 22 . Examples of the base material 21 include PET (Poly Ethylene Terephthalate), OPP (Oriented Polypropylene), PMP (Poly-4-methylpentene-1), PTFE (Polytetrafluoroethylene), glass, and the like.

The elastic resin layer 22 only needs to have rubber elasticity. Preferable examples of the elastic resin include polysilicone resin, polyurethane resin, acrylic resin, and the like. Among them, polysiloxane resin can be preferably used from the viewpoint of impact absorbability.

Then, the peeling force of the film 12 to the elastic resin layer 22 is greater than the peeling force of the adhesive film 12 to the translucent base material 11 , and then the peeling force of the film 12 to the elastic resin layer 22 is smaller than the peeling force of the adhesive film 12 to the substrate 31 . Thereby, the single piece 12A of the adhesive film 12 can be transferred from the translucent base material 11 to the substrate 31 via the transfer material.

The peeling force of the film 12 to the elastic resin layer 22 in the 90° peeling test based on JIS K 6854-1:1999 (ISO 8510-1:1990) is preferably 50~500 mN/5 cm, more preferably 60~ 300 mN/5 cm, preferably 80~20mN/5 cm. This can also reduce the peeling force of the adhesive film from the substrate, thereby increasing the freedom of blending of the adhesive film. The peeling force of the elastic resin layer 22 can be adjusted by coating the release polysiloxane or making the hardness of the elastic resin layer 22 higher than usual.

The elastic resin layer 22 preferably has protrusions 22A arranged in a single piece 12A. The height of the protrusion 22A is preferably not less than the wiring height of the substrate 31 , preferably not less than 1 μm, more preferably not less than 5 μm, and still more preferably not less than 10 μm. In addition, the size of the front end surface of the protrusion 22A may be larger than the size of the single piece 12A, or may be smaller than the size of the single piece 12A. The upper limit of the size of the front end surface of the protrusion 22A may be 200 μm or less, preferably 150 μm or less, more preferably 50 μm or less, and even more preferably 20 μm or less. In addition, the lower limit of the size of the front end surface of the protrusion 22A is preferably 50 μm or more, preferably 30 μm or more, and further preferably 5 μm or more. In order to install the single piece of adhesive film at a specific position, it is preferable to satisfy the above conditions. Here, the front end surface of the protrusion 22A is the longer side when the protrusion 22A has a long and short length, for example, like a substantially rectangular shape. In the case of a circle, the size of the front end surface refers to the diameter. Since the elastic resin layer 22 has the protrusions 22A, during the transfer step, the pressure can be followed to follow the step difference, so that very excellent transferability can be obtained. Furthermore, in this specification, the transfer material in which the elastic resin layer 22 has the protrusions 22A is called a marking material.

[Transfer step (B1)] FIG. 3 is a diagram for explaining the transfer step of the first embodiment. As shown in FIG. 3 , in the transfer step (B1), the base material 21 is pressed against the substrate 31 , and the single piece 12A of the adhesive film arranged in the elastic resin layer 22 is transferred to the substrate 31 . By pressing the transfer material against the substrate 31, the single sheet 12A of the adhesive film is transferred from the transfer material to the substrate 31, so that good transferability can be obtained. In particular, by using a marking material in which the elastic resin layer 22 has the protrusions 22A, the marking material can be pressurized following the step difference, thereby achieving extremely excellent transferability.

The substrate 31 is not particularly limited, and an example thereof includes a substrate in which light-emitting elements are arranged in units of sub-pixels constituting one pixel. A substrate for arranging light-emitting elements has a first conductivity type circuit pattern and a second conductivity type circuit pattern on the base material. The light-emitting elements are arranged in units of sub-pixels (sub-pixels) constituting one pixel, for example, on the p-side. The corresponding positions of the 1 conductive type electrode and the 2nd conductive type electrode on the n side respectively have the first electrode and the second electrode, such as data lines, address lines and other circuit patterns forming matrix wiring, which can be connected or disconnected to form 1 Each sub-pixel of the pixel corresponds to the light-emitting element. In addition, the substrate may be made of glass, PET (Polyethylene Terephthalate), or other light-transmitting material. Moreover, the circuit pattern, the first electrode, and the second electrode may be, for example, ITO (Indium-Tin-Oxide), IZO (Indium-Zinc-Oxide), ZnO (Zinc-Oxide), or IGZO (Indium-Gallium-Zinc-Oxide). ) and other transparent conductive films.

When the substrate 31 is a substrate for arranging light-emitting elements, in the transfer step (B1), the single piece 12A of the adhesive film can be arranged in units of 1 pixel (for example, 1 pixel of a group of RGB), or It can be arranged in units of sub-pixels (such as any RGB) constituting one pixel. This can correspond to a light-emitting element array with a higher PPI (Pixels Per Inch) to a light-emitting element array with a lower PPI. The single piece 12A can be arranged to correspond to a plurality of light-emitting elements, the single piece 12A can be arranged to correspond to each light-emitting element, and the single piece 21 can also be arranged to correspond to each electrode of the light-emitting element. Alternatively, the individual chips 12A may be separately provided on the electrodes on the substrate 31 side one by one, and the electrodes of the micro-LEDs serving as the light-emitting element array may be connected using the separate individual chips 12A.

Moreover, in the transfer step (B1), it is preferable to arrange the single piece 12A of the film adhered in units of one pixel or a plurality of pixels. For example, in the case of RGB, the light-emitting element arranges 3 pixels as a group, or a total of 6 pixels including 3 pixels of the RGB redundant circuit are arranged as a group. Therefore, the adhesive film can be transferred to 1 By grouping 6 pixels, you can transfer in units of 1 pixel, and you can also arrange them in units of electrodes. On the other hand, in order to improve productivity, the adhesive film can be transferred within a range that does not impair transparency, such as a range of 1 mm × 1 mm.

In addition, the average transmittance of visible light after the single chip 12A is placed (arranged) on the substrate 31 is preferably 20% or more, more preferably 35% or more, and further preferably 50% or more. Thereby, a display device with excellent light transmittance and beautiful appearance can be obtained. Even in the case of a transparent substrate, a single piece can be attached to the base glass or the transparent substrate for evaluation and used as a reference (Ref) to determine the average transmittance. The average transmittance of visible light provided with light-emitting elements is even lower. When the light-emitting element is installed, the measurement is performed in the unlit state. The average transmittance of visible light can be measured, for example, using a UV-visible spectrophotometer.

[Installation steps (C1)] In the mounting step (C1), electronic components are mounted on the single piece 12A of the adhesive film transferred to the substrate 31. Examples of electronic components include chip components such as semiconductor wafers and LED wafers. In particular, micro-sized LED wafers are preferably used.

The LED chip can be a so-called flip-chip type, that is, it has a main body, a first conductive type electrode, and a second conductive type electrode 2, and has the first conductive type electrode and the second conductive type electrode arranged horizontally on the same surface. structure. The body has a first conductivity type cladding layer, for example, made of n-GaN, an active layer, for example, made of an In _{x Aly} Ga _1-xy N layer, and a second conductivity type cladding layer, for example, made of p-GaN. And has a so-called double heterostructure. The first conductive type electrode is formed on a part of the first conductive type cladding layer through the passivation layer, and the second conductive type electrode is formed on a part of the second conductive type cladding layer. When a voltage is applied between the first conductive type electrode and the second conductive type electrode, carriers are concentrated in the active layer and combined again to produce light. Furthermore, when an adhesive film (NCF: Non Conductive Film) is used as the adhesive film, it is preferable that the first conductive type electrode and the second conductive type electrode have a bump shape.

In the mounting step (C1), first, electronic components are mounted on the single chip 12A of the substrate 31. The method of mounting the electronic component on the substrate 31 is not particularly limited. When the electronic component is a light-emitting element, for example, the following method can be used: removing the light-emitting element from the wafer by a laser lift-off method (LLO method). The substrate is directly transferred and arranged on the substrate 31; or a transfer substrate with a light-emitting element closely connected in advance is used, and the light-emitting element is transferred from the transfer substrate and arranged on the substrate 31.

Then, the single piece 12A of the adhesive film is cured, and the electronic components arranged at specific positions on the substrate 31 are fixed. For example, when the adhesive film contains a thermosetting adhesive, the electronic components are thermocompression-bonded through the single piece 12A of the adhesive film. As a method of thermocompression bonding the electronic component to the substrate 31, a thermocompression bonding method used for a known curable resin film can be appropriately selected and used. The thermocompression bonding conditions are, for example, a temperature of 150°C to 260°C, a pressure of 1 MPa to 60 MPa, and a time of 5 seconds to 300 seconds. A cured resin film is formed by curing the thermosetting adhesive.

[Modification] In the first embodiment, a part of the adhesive film 12 is removed by laser ablation and a single piece 12A of the adhesive film 12 is arranged on the translucent base material 11. However, the formation method of the single piece is not particularly limited. For example, the following can also be used: Methods of forming by removing a part of the adhesive film 12 by laser, cutting, etc.; methods of forming by printing, inkjet, etc., etc. In addition, when forming a single piece by printing method, inkjet method, etc., as the translucent base material 11, PET (Polyethylene Terephthalate), PC (Polycarbonate), polyimide, etc. can be used.

Furthermore, for example, if the electronic component is an LED and the unlit LED is removed by laser after the LED is installed, there may be unevenness in the removed area. However, by using the elastic resin layer 22, it is formed above the height of the electronic component. The transfer material with one protrusion can reliably transfer the single piece 12A of the adhesive film 12 to the removal site.

The manufacturing method of this type of connection structure includes: a removal step, which uses laser to remove the light-emitting elements at specific positions of the connection structure in which the light-emitting elements are arranged; and a transfer step, which uses an elastic resin layer to form the light-emitting elements. The transfer material with protrusions above the height is attached to the protrusions with a single piece of adhesive film, so that the single piece is transferred to a specific position that is removed by laser; and the installation step is based on the transfer to the specific position. Then the light-emitting element is installed on the single piece of film. By using a transfer material in which protrusions above the height of the light-emitting element are formed on the elastic resin layer, even if there are unevenness in the removed area, pressure can be followed to follow the unevenness, thereby achieving extremely excellent transferability.

Furthermore, in the first embodiment, the case where the electronic components are thermocompression-bonded via a single piece of the adhesive film is exemplified. However, for example, when the adhesive film contains solder particles, the electronic components may be temporarily fixed on the adhesive film. For example, reflow is performed at a temperature of 200 to 300°C and a time of 30 sec or more.

Furthermore, in the first embodiment, an LED chip with a horizontal structure is exemplified as the electronic component. However, an LED chip with a vertical structure in which the first conductive type electrode and the second conductive type electrode are arranged to face each other via an epitaxial layer may also be used. In this case, a single piece of the adhesive film can be used to connect one of the first conductive type electrode or the second conductive type electrode to the electrode of the substrate, and the other electrode can be made a transparent electrode to form, for example, a matrix wiring. Pattern of data lines or address lines.

<Second Embodiment> Hereinafter, the arrangement step (A2), the transfer step (B2), and the mounting step (C2) in the manufacturing method of the connected structure of the second embodiment will be described with reference to FIGS. 4 and 5 .

[Arrangement step (A2)] Fig. 4 is a diagram showing the arrangement steps of the second embodiment. As shown in FIG. 4 , in the arrangement step (A2), the adhesive film 42 formed on the translucent base material 41 that is translucent to laser light is opposed to the elastic resin 52 on the base material 51 . The single piece 42A of the adhesive film 42 is transferred to the elastic resin 52 by the laser peeling method and aligned. The base material 51 and the elastic resin layer 52 constitute a transfer material, and the transfer material transfers the single piece 42A of the adhesive film 42 from the translucent base material 41 .

The size of the individual pieces 42A, the arrangement of the individual pieces 42A, and the distance between the individual pieces 42A are respectively the same as the size of the individual pieces 12A, the arrangement of the individual pieces 12A, and the distance between the individual pieces 12A in the first embodiment, so here Omit description. In addition, the translucent base material 41, the adhesive film 42, the base material 51, and the elastic resin 52 are also the same as the translucent base material 11, the adhesive film 12, the base material 21, and the elastic resin 22 in the first embodiment. , so the description is omitted here. In addition, a release material may be provided between the translucent base material 41 and the adhesive film 42 .

As shown in FIG. 4 , laser light is irradiated from the translucent base material 41 side, and the single piece 42A is peeled off from the translucent base material 41 and dropped to the elastic resin 52 , leaving the removed portion 42B on the translucent base material. 41. The subsequent transfer of the single piece 42A of the film 42 may use, for example, the same laser-induced forward transfer device as described above.

The translucent base material 41 on which the adhesive film 42 is formed as the donor substrate is held on the donor stage, and the base material 51 on which the elastic resin 52 is formed as the receptor substrate is held on the receptor stage. Next, the distance between the film 42 and the elastic resin 52 is, for example, 10 to 100 μm. The oscillation wavelength of the laser device is, for example, 193, 248, 308, and 351 nm, and can be appropriately selected from these oscillation wavelengths according to the light absorption of the material of the adhesive film 42 or the release material. The mask uses a pattern in which windows of specific sizes are formed at specific intervals so that the projection on the boundary surface of the translucent base material 41 and the adhesive film 42 becomes a desired arrangement of laser light.

By using a laser-induced forward transfer device, the adhesive film 42 that is irradiated with laser light can generate a shock wave at the interface between the translucent base material 41 and the adhesive film 42, thereby transferring a plurality of single pieces 42A from the translucent base material. The material 41 is peeled off and laser-induced forward transfer toward the base material 51 , so that the plurality of single pieces 42A are dropped to specific positions on the base material 51 through the elastic resin 52 . Thereby, the single piece 42A of the adhesive film 42 can be transferred and arranged on the base material 51 with high precision and efficiency, and the working time can be shortened.

In addition, the reaction rate of the single piece 42A of the adhesive film transferred using the laser-induced forward transfer device is the same as when the single piece is produced using the laser-induced forward transfer device, preferably 25% or less, more preferably 20% or less. , and preferably less than 15%. With the reaction rate of the single chip 42A being less than 25%, electronic components can be thermocompressed in the mounting step (C2). The reaction rate can be measured using, for example, FT-IR in the same manner as described above.

[Transfer step (B2)] FIG. 5 is a diagram for explaining the transfer step of the second embodiment. As shown in FIG. 5 , in the transfer step (B2), the base material 51 is pressed against the substrate 61 , and the single piece 42A of the adhesive film arranged in the elastic resin layer 52 is transferred to the substrate 61 . By pressing the transfer material against the substrate 61, the single sheet 42A of the adhesive film is transferred from the transfer material to the substrate 61, so that good transferability can be obtained. In particular, by using a marking material with protrusions in the elastic resin layer 52, the marking material can be pressed according to the step, and very excellent transferability can be obtained. The substrate 61 is the same as the substrate 31 in the first embodiment, so the description is omitted here.

[Installation steps (C2)] In the mounting step (C2), electronic components are mounted on the single piece 42A of the adhesive film transferred to the substrate 61. The installation step (C2) is the same as the installation step (C1) in the first embodiment, so the description is omitted here.

＜3.Single-piece adhesive film＞ The monolithic adhesive film of this embodiment is formed by arranging individual pieces of the adhesive film on a base material. The following is exemplified: as shown in FIG. A part of the adhesive film 12 on the light-transmissive base material 11 is removed, and the single piece 12A of the adhesive film 12 is arranged on the light-transmissive base material 11 .

In addition, the single-piece adhesive film of this embodiment is formed by arranging individual pieces of the adhesive film on a base material through an elastic resin layer. As an example, as shown in FIG. 2, the individual pieces of the adhesive film are arranged on a translucent base material. The single piece 12A of the adhesive film 12 on the base material 21 is transferred to the elastic resin layer 22 on the base material 21; or, as shown in FIG. 4, laser light is irradiated from the side of the light-transmitting base material 41 to make the single piece 42A self-transparent. The elastic base material 41 is peeled off and allowed to fall onto the elastic resin 52 .

The size of the individual pieces 12A and 42A, the arrangement of the individual pieces 12A and 42A, and the distance between the individual pieces 12A and 42A are the same as those described in the first embodiment, so the description is omitted here.

The subsequent film is not particularly limited as long as it can be cured by energy such as heat or light. For example, it can be appropriately selected from a thermally curable adhesive, a photocurable adhesive, a heat-light combined curable adhesive, and the like. As a specific example, a thermosetting adhesive containing a film-forming resin, a thermosetting resin, and a curing agent will be described. The thermosetting adhesive is not particularly limited, and examples thereof include a thermal anionic polymerization resin composition containing an epoxy compound and a thermal anionic polymerization initiator, and a thermal cationic polymerization containing an epoxy compound and a thermal cationic polymerization initiator. type resin composition, a thermal radical polymerization type resin composition containing a (meth)acrylate compound and a thermal radical polymerization initiator, etc. In addition, the (meth)acrylate compound refers to any one including an acrylic monomer (oligomer) and a methacrylic monomer (oligomer).

Among these thermosetting adhesives, it is preferable that the thermosetting resin contains an epoxy compound and the hardening agent is a thermal cationic polymerization initiator. Thereby, the hardening reaction when forming a single piece by laser light can be suppressed, and the hardening reaction can be quickly hardened by heat during thermocompression bonding. Hereinafter, a thermal cationic polymerization-type resin composition containing a film-forming resin, an epoxy compound, and a thermal cationic polymerization initiator will be described as a specific example.

The film-forming resin is, for example, a high molecular weight resin having an average molecular weight of 10,000 or more. From the viewpoint of film-forming properties, an average molecular weight of about 10,000 to 80,000 is preferred. Examples of the film-forming resin include various resins such as butyral resin, phenoxy resin, polyester resin, polyurethane resin, polyester-type polyurethane resin, acrylic resin, and polyimide resin. These resins may be used alone or in combination. Use two or more types. Among these resins, butyral resin is preferably used from the viewpoint of film formation state, connection reliability, and the like. Specific examples of the butyral resin include "KS-10", a product of Sekisui Chemical Industry Co., Ltd. under the trade name. The content of the film-forming resin is preferably 20 to 70 parts by mass, more preferably 30 to 60 parts by mass or less, and still more preferably 45 to 55 parts by mass based on 100 parts by mass of the thermosetting adhesive.

The epoxy compound is not particularly limited as long as it has one or more epoxy groups in the molecule. For example, it may be bisphenol A type epoxy resin, bisphenol F type epoxy resin, etc., or it may be urethane. Modified epoxy resin. Among them, for example, hydrogenated bisphenol A type glycidyl ether can be preferably used from the viewpoint of forming an adhesive film having a maximum absorption wavelength in the wavelength range of 180 nm to 360 nm. Specific examples of hydrogenated bisphenol A type glycidyl ether include "YX8000", a trade name manufactured by Mitsubishi Chemical Corporation. The content of the epoxy compound is preferably 30 to 60 parts by mass based on 100 parts by mass of the thermosetting adhesive, more preferably 35 to 55 parts by mass or less, and still more preferably 35 to 45 parts by mass.

As the thermal cationic polymerization initiator, those known as thermal cationic polymerization initiators for epoxy compounds can be used. For example, those that generate an acid by heat that can cationically polymerize a cationically polymerizable compound can use well-known ion salts. , sulfur salt, phosphonium salt, ferrocene, etc. Among these, aromatic sulfonium salts that exhibit good latent properties with respect to temperature can be preferably used. Specific examples of the aromatic sulfonium salt-based polymerization initiator include, for example, the trade name "SI-60L" manufactured by Sanshin Chemical Industry Co., Ltd. The content of the thermal cationic polymerization initiator is preferably 1 to 20 parts by mass, more preferably 5 to 15 parts by mass or less, and still more preferably 8 to 12 parts by mass based on 100 parts by mass of the thermosetting adhesive.

In addition, as other additives blended into the thermosetting adhesive, rubber components, inorganic fillers, silane coupling agents, diluting monomers, fillers, softeners, colorants, flame retardants, etc. may also be blended as necessary. Thixotropic agents, etc.

The rubber component is not particularly limited as long as it is an elastomer with high cushioning properties (impact absorbing properties). Specific examples include acrylic rubber, silicone rubber, butadiene rubber, polyurethane resin (polyurethane elastomer), etc. . As the inorganic filler, silica, talc, titanium oxide, calcium carbonate, magnesium oxide, etc. can be used. The inorganic filler may be used alone, or two or more types may be used in combination. As the silane coupling agent, an epoxy silane coupling agent, an acrylic silane coupling agent, etc. can be used.

Then, the hardness A of the film is 20 to 40, preferably 20 to 35, more preferably 20 to 30. When the hardness of the durometer A is too high, the adhesive film is too hard, and it is easy to cause deformation and damage of the chip parts. When the hardness of the durometer A is too low, the adhesive film is too soft and it is easy to cause chip parts. The tendency of parts to misalign, such as misalignment. Then the durometer A hardness of the film can be measured according to JIS K 6253, using durometer A as the rubber hardness (Japanese Industrial Standard JIS-A hardness).

Then, the storage elastic modulus of the film is preferably 60 MPa or less, more preferably 30 MPa or less, and further preferably 10 MPa or less at a temperature of 30°C and a frequency of 200 Hz in a dynamic viscoelasticity test using a press-in test device. When the storage elastic modulus at a temperature of 30°C and a frequency of 200 Hz is too high, it may not be able to absorb the impact of a chip component that is ejected at high speed due to laser irradiation, resulting in a tendency for the transfer rate of the chip component to decrease. The storage elastic modulus at a temperature of 30°C and a frequency of 200 Hz can be measured using an indentation test device. For example, use a flat punch with a diameter of 100 μm, set the target intrusion depth to 1 μm, and sweep within the frequency range of 1 to 200 Hz. And measure.

In addition, the storage elastic modulus of the hardened adhesive film at a temperature of 30°C measured in accordance with JIS K 7244 in the tensile mode is preferably 100 MPa or more, and more preferably 2000 MPa or more. When the storage elastic modulus at a temperature of 30°C is too low, good conductivity will not be obtained and connection reliability will tend to decrease. The storage elastic modulus at a temperature of 30°C can be measured in accordance with JIS K 7244 using a viscoelastic testing machine (Vibration) in the tensile mode, for example, with a frequency of 11 Hz and a temperature rise rate of 3°C/min.

Moreover, the adhesive film is preferably a conductive film further containing conductive particles or an anisotropic conductive film (ACF: Anisotropic Conductive Film). As the conductive particles, those used in known anisotropic conductive films can be appropriately selected and used. Examples include metal particles such as nickel, copper, silver, gold, palladium, and solder, and metal-coated resin particles obtained by coating the surfaces of resin particles such as polyamide and polybenzoguanamine with metals such as nickel and gold. Thereby, conduction can be achieved even when the chip component is not provided with connection parts such as solder bumps.

From the viewpoint of laser transferability, the anisotropic conductive film is preferably a particle alignment film in which conductive particles are aligned in the plane direction. As long as the arrangement is repeated and regular, the shape is not particularly limited, and examples thereof include grid arrangements such as square grids, hexagonal grids, rhombus grids, and rectangular grids. By arranging the conductive particles in the surface direction, the capture of the counter electrode can be easily stabilized, and conductivity and insulation can be improved.

Furthermore, the anisotropic conductive film may be configured to have a region where conductive particles are agglomerated at positions corresponding to the electrodes, and to have regions where conductive particles do not exist at other positions. The area where partial concentration exists is preferably in the following range: from the perspective of trapping, it is 0.8 times or more of the electrode size, preferably 1.0 times or more, and from the perspective of reducing conductive particles, it is preferably 1.2 times or less the size of the electrode. is less than 1.5 times. The removed parts can be used for quality control, inspection purposes, etc.

In addition, the particle surface density of the anisotropic conductive film can be appropriately designed according to the electrode size of the wafer component in the same way as the cured film. The lower limit of the particle surface density can be set to 500 particles/mm ² or more, 20,000 particles/mm ² or more, More than 40,000 particles/ ^mm2 , more than 50,000 particles/ ^mm2 , the upper limit of particle surface density can be set to less than 1,500,000 particles/ ^mm2 , less than 1,000,000 particles/ ^mm2 , less than 500,000 particles/ ^mm2 , and less than 100,000 particles/ ^mm2 . Thereby, even when the electrode size of the chip component is small, excellent conductivity and insulation can be obtained. The particle area density of the cured film of the anisotropic conductive film is the particle area density of the arranged portion of the conductive particles when the film is formed during production. When the particle number density is determined from a plurality of single pieces, the particle surface density can be calculated based on the area and the number of particles. The area is the area including the single piece and the space, excluding the space between the single pieces. The resulting area.

The particle size of the conductive particles is not particularly limited. The lower limit of the particle size is preferably 1 μm or more. For example, from the viewpoint of the capture efficiency of the conductive particles in the connecting structure, the upper limit of the particle size is preferably 50 μm or less. , more preferably 20 μm or less. Depending on the size of the electrode, it is sometimes required to be less than 3 μm, preferably less than 2.5 μm. Furthermore, the particle size of the conductive particles can be a value measured by an image-type particle size distribution meter (one example is FPIA-3000: manufactured by Malvern Instruments). The number should be more than 1,000, preferably more than 2,000.

The lower limit of the thickness of the anisotropic conductive film can be, for example, more than 60% of the particle diameter of the conductive particles, or more than 90% to correspond to relatively small particle sizes, but is preferably more than 1.3 times the diameter of the conductive particles or more. is above 3 μm. Furthermore, the upper limit of the thickness of the anisotropic conductive film can be, for example, 20 μm or less or 3 times or less the particle diameter of the conductive particles, preferably 2 times or less. In addition, the anisotropic conductive film may be laminated with an adhesive layer or adhesive layer that does not contain conductive particles. The number of layers and lamination layers can be appropriately selected depending on the object or purpose. In addition, as the insulating resin of the adhesive layer or adhesive layer, the same resin as that of the anisotropic conductive film can be used. The film thickness can be measured using a known side micrometer or digital thickness gauge. The film thickness may be measured at, for example, 10 or more locations and the average value may be obtained. [Example]

<4.Example> Hereinafter, examples using this technology will be described. Furthermore, the present technology is not limited to these embodiments.

[Preparation of particle alignment film] Polyethylene butyral resin (trade name: KS-10, manufactured by Sekisui Chemical Co., Ltd.) 50 wt%, hydrogenated bisphenol A type glycidyl ether (trade name: YX8000, manufactured by Mitsubishi Chemical Co., Ltd.) 40 wt% , and cationic polymerization initiator (trade name: SI-60L, manufactured by Sanxin Chemical Industry Co., Ltd.) are mixed in a manner of 10 wt%.

The mixed resin was applied to a glass plate with a thickness of 0.5 mm that had been peeled off with polysiloxane and dried (60°C-3 min) to obtain a resin film with a thickness of 4 μm. The resin film was bonded to a substrate in which conductive particles (average particle diameter: 2.2 μm, manufactured by Sekisui Chemical Industry Co., Ltd.) were arranged in a hexagonal grid pattern, and the conductive particles were transferred to the resin film to obtain a particle surface with a thickness of 4.0 μm. Particle array film with a density of 58,000 particles/ ^mm2 . Arrangement of conductive particles and transfer to the resin film are performed in accordance with the description of Japanese Patent No. 6187665.

[Preparation of monolithic particle array film] A part of the particle alignment film on the prepared glass plate was removed by laser ablation, so that a single piece of the particle alignment film with a thickness of 4.0 μm and 15 μm × 30 μm was arranged in a grid with a distance between center points of 200 μm. arranged on the glass plate. Laser irradiation conditions are as follows. Laser type: YAG Laser Laser wavelength: 266 nm Laser energy intensity: 10% Number of laser irradiations: 1 time

[Measurement of Peeling Force of Particle Alignment Film] (1) Measure the peeling force of the particle array film on a glass plate (the support base material of the particle array film) that has been peeled off with polysiloxane. A PP (Poly Propylene) tape with a width of 1 mm is adhered to the side of the particle alignment film, and a 90° peeling test is performed using a tensile testing machine in accordance with JIS K 6854-1: 1999 (ISO 8510-1: 1990). The result was that the peeling force in the 90° peel test was 20 mN/5 cm. (2) Measure the peeling force of the particle array film to the transfer material made of polysiloxane (the base material of the marking material). At a temperature of 50°C and a pressure of 1 MPa, attach the particle alignment film to the transfer material, and stick a 1 mm wide PP (Poly Propylene) tape on the side of the particle alignment film, in accordance with JIS K 6854-1: 1999 (ISO 8510- 1:1990) A 90° peel test was performed using a tensile testing machine. As a result, the peeling force in the 90° peeling test was 100 mN/5 cm. (3) Measure the peeling force of the particle array film on the adherend A (thickness 0.5 mm, flat quartz glass plate). At a temperature of 50°C and a pressure of 1 MPa, attach the particle alignment film to the adherend A. Paste a PP (Poly Propylene) tape with a width of 1 mm on the side of the particle alignment film, in accordance with JIS K 6854-1: 1999 (ISO 8510-1: 1990) A 90° peel test was performed using a tensile testing machine. As a result, the peeling force in the 90° peeling test was 150 mN/5 cm or more. (4) Measure the peeling force of the particle array film on adherend B (Al pattern with thickness 0.5mm, 200 μmP, width 100 μm, pattern thickness 1 μm). At a temperature of 50°C and a pressure of 1 MPa, attach the particle alignment film to the adherend B. Paste a PP (Poly Propylene) tape with a width of 1 mm on the side of the particle alignment film, in accordance with JIS K 6854-1: 1999 (ISO 8510-1: 1990) A 90° peel test was performed using a tensile testing machine. As a result, the peeling force in the 90° peeling test was 170 mN/5 cm or more.

[Evaluation of transferability of single piece of particle array film] Transfer a single piece of the particle array film with a thickness of 4.0 μm and 15 μm × 30 μm to adherend A or adherend B. The individual wafers are arranged in a grid pattern of 50×50 pcs so that the distance between center points becomes 200 μm.

Fig. 6 is a diagram showing the arrangement of a single piece of the particle array film with respect to the adherend B. As shown in FIG. 6 , the particle array film was placed on the adherend B71 so that a half width of 7.5 μm of the single piece 81A overlapped with the Al pattern 72 , and the step difference was evaluated.

Furthermore, the number of individual pieces of the particle array film transferred to the adherend A or the adherend B was counted and evaluated by the following index. When the evaluation is C (when the transfer rate is less than 99.0%), productivity may be reduced. A: The transfer rate is over 99.9% B: The transfer rate is more than 99.0% and less than 99.9% C: Transfer rate is less than 99.0%

[Example 1] A marking material with protrusions is used to transfer a single piece of particle alignment film. The marking material is composed of a polysiloxane layer on a supporting base material and protrusions formed on the polysiloxane layer. The protrusions of the marking material are arranged in a grid shape of 50 × 50 pcs in the same manner as the single piece so that the distance between the center points is 200 μm. The shape of the front end of the protrusion is a rectangle of 15 μm × 30 μm. The height of the protrusion is 20 μm.

Align the protrusions of the marking material with the single piece of particle alignment film arranged on the glass plate, and press the protrusions of the marking material against the single piece of particle alignment film under the conditions of temperature 50°C and pressure 1 MPa to align the particles. A single piece of film is transferred to the marking material side.

Then, press the single piece of particle alignment film transferred to the marking material side against adherend A or adherend B under the conditions of temperature 50°C and pressure 1 MPa, so that the single piece of particle alignment film is transferred to Adherent A or adherent B. Table 1 shows the evaluation results of the transferability of a single piece of the particle array film.

[Example 2] The particle alignment film and the polysiloxane transfer material are opposed to each other, and a single piece of the particle alignment film with a thickness of 4.0 μm and 15 μm × 30 μm is formed into a grid shape such that the distance between the center points becomes 200 μm by laser lift-off. Arrange on silicone transfer material. The polysilicone transfer material has a polysilicone layer on the supporting base material, and the surface of the polysilicone layer is flat. In addition, the laser irradiation conditions are as follows. Laser type: YAG Laser Laser wavelength: 266 nm Laser energy intensity: 10% Number of laser irradiations: 1 time

Then, press the single piece of particle alignment film transferred to the polysiloxane transfer material side against adherend A or adherend B under the conditions of temperature 50°C and pressure 1 MPa, so that the single piece of particle alignment film Transfer to adherend A or adherend B. Table 1 shows the evaluation results of the transferability of a single piece of the particle array film.

[Reference example 1] Make the particle alignment film face adherend A or adherend B, and use laser peeling method to make a single piece of particle alignment film with a thickness of 4.0 μm and 15 μm × 30 μm so that the distance between the center points becomes 200 μm. Arranged in a grid pattern on adherend A or adherend B. In addition, the laser irradiation conditions are the same as those in Example 2. Table 1 shows the evaluation results of the transferability of a single piece of the particle array film.

[Table 1] Example 1 Example 2 Reference example 1 Transfer method Marking material LLO+transfer material LLO Transferability Adhered body A A A A Adhered body B (with step difference) A B C

As shown in Table 1, it can be seen that in Reference Example 1, a single piece of the particle alignment film is placed on the substrate side and transferred by the laser lift-off method. Therefore, if the adherend B is used, there are wiring and wiring surfaces on the substrate. When the insulating film contains step-like unevenness, the transfer rate of a single piece of the particle alignment film may be reduced and productivity may be reduced.

On the other hand, it can be seen that in Examples 1 and 2, the silicone layer of the marking material and the transfer material is pressed against each other and a single piece of the particle alignment film is attached. Therefore, even if there are wiring and wiring surfaces like the adherend B, For substrates such as insulating films that contain stepped unevenness, good transferability of a single piece of particle-aligned film can be obtained, which can improve productivity. In particular, in Example 1, the single piece of particle alignment film is not scattered by the laser peeling method, but the protrusions of the polysiloxane layer of the marking material are pressed against each other to adhere the single piece of particle alignment film. Therefore, it is possible to follow By applying pressure at different levels, excellent transferability can be obtained.

11: Translucent base material 12:Add film 12A:Single chip 12B:Single chip 21:Substrate 22: Elastic resin layer 22A:Protrusion 31:Substrate 41: Transparent substrate 42:Add film 42A:Single chip 51:Substrate 52: Elastic resin layer 61:Substrate 71:Adhered body B 72: Al pattern 81A:Single chip

[Fig. 1] Fig. 1 is a diagram showing the steps of forming an adhesive film on a single piece by laser ablation. [Fig. 2] Fig. 2 is a diagram showing the steps of arranging individual pieces of the adhesive film on the elastic resin layer. [Fig. 3] Fig. 3 is a diagram for explaining the transfer step of the first embodiment. [Fig. 4] Fig. 4 is a diagram showing the arrangement steps of the second embodiment. [Fig. 5] Fig. 5 is a diagram for explaining the transfer step of the second embodiment. [Fig. 6] Fig. 6 is a diagram showing the arrangement of a single piece of the particle array film with respect to the adherend B. [Fig.

11: Translucent base material

12A:Single chip

21:Substrate

22: Elastic resin layer

22A:Protrusion

Claims (13)

A method of manufacturing a connected structure, which has: The arrangement step is to arrange the single pieces of the adhesive film on the base material through the elastic resin layer; The transfer step is to press the above-mentioned base material against the substrate and transfer a single piece of the adhesive film arranged on the above-mentioned elastic resin layer to the above-mentioned substrate; and The installation step is to install electronic components on a single piece of adhesive film transferred to the above-mentioned substrate; and The size of the above-mentioned single chip is less than 200 μm, The peeling force of the adhesive film to the elastic resin layer is smaller than the peeling force of the adhesive film to the substrate. The manufacturing method of a connected structure according to claim 1, wherein in the above arrangement step, a part of the adhesive film formed on the translucent base material that is translucent to laser light is removed by laser ablation, and A single piece of adhesive film is arranged on the above-mentioned translucent base material, and the single piece of adhesive film arranged on the above-mentioned translucent base material is transferred to the above-mentioned elastic resin layer. The manufacturing method of a connected structure according to claim 1, wherein in the above-mentioned arranging step, the adhesive film formed on the translucent base material that is translucent to laser light is opposed to the elastic resin on the above-mentioned base material. In the direction, a single piece of the above-mentioned adhesive film is transferred to the above-mentioned elastic resin by a laser peeling method and arranged. The method for manufacturing a connected structure according to any one of claims 1 to 3, wherein the reaction rate of a single piece of the adhesive film is 25% or less. The manufacturing method of a connected structure according to any one of claims 1 to 3, wherein the peeling force of the adhesive film to the elastic resin layer is 90 in accordance with JIS K 6854-1: 1999 (ISO 8510-1: 1990) °50～500 mN/5 cm in peel test. The manufacturing method of a connected structure according to any one of claims 1 to 3, wherein the elastic resin layer has protrusions arranged in the single piece. The method of manufacturing a connection structure according to claim 6, wherein the height of the protrusion is greater than the wiring height of the substrate. The method for manufacturing a connected structure according to any one of claims 1 to 3, wherein the adhesive film is a conductive film or an anisotropic conductive film. The method for manufacturing a connected structure according to any one of claims 1 to 3, wherein the adhesive film is a particle array film in which conductive particles are arranged in a plane direction. The manufacturing method of a connected structure according to any one of claims 1 to 3, wherein the elastic resin layer is a polysiloxy resin layer. The method for manufacturing a connected structure according to any one of claims 1 to 3, wherein the electronic component is a light-emitting element. A transfer printing method for single-piece adhesive film, which has: The arrangement step is to arrange the individual pieces of the adhesive film on the base material through the elastic resin layer; and The transfer step is to press the above-mentioned base material against the substrate and transfer a single piece of the adhesive film arranged on the above-mentioned elastic resin layer to the above-mentioned substrate; and The size of the above-mentioned single chip is less than 200 μm, The peeling force of the adhesive film to the elastic resin layer is smaller than the peeling force of the adhesive film to the substrate. A method of manufacturing a connected structure, which has: The removal step is to use laser to remove the light-emitting elements at specific positions of the connection structure in which the light-emitting elements are arranged; The transfer step is to use a transfer material with protrusions above the height of the light-emitting element formed on the elastic resin layer, attach a single piece of the adhesive film to the protrusions, and transfer the single piece to the above-mentioned strips removed by the laser. a specific location; and The installation step is to install the light-emitting element on a single piece of the adhesive film that has been transferred to the above-mentioned specific position.