TW202304014A - Method for manufacturing connection structure and connection film - Google Patents

Abstract

Provided are a manufacturing method for a connection structure and connection film that make it possible to attain an excellent deposition quality and continuity of a chip component by emitting a laser beam. This manufacturing method for a connection structure comprises: a deposition step in which a chip component, which is disposed on a base material that is transparent to laser light, is caused to face a wiring board, and laser light is emitted from the base material side to deposit the chip component onto the wiring substrate side; and a connection step for connecting the chip component to the wiring board via a connection film. The connection film has a rubber layer and a bonding layer. In the deposition step, the connection film is disposed on an electrode surface of the wiring board, and the rubber layer is brought into contact with the electrode surface of the chip component.

Description

Manufacturing method of bonded structure and bonded film

The technology relates to a method of manufacturing a connection structure for connecting a chip component to a substrate and a connection film. This application claims priority based on Japanese Patent Application No. Japanese Patent Application No. 2021-081171 filed in Japan on May 12, 2021, and this application is incorporated by reference in this application.

In recent years, as the next-generation displays of LCD (Liquid Crystal Display) and OLED (Organic Light Emitting Diode), the development of micro LEDs has been active. As a subject of micro-LEDs, a technology called mass transfer for mounting micro-sized LEDs on panel substrates is required, and this technology is being researched in various places.

As the current main method of mass transfer, a method of transferring LEDs to the panel substrate side using a stamping material can be cited. Fig. 11 is a diagram schematically showing mass transfer in the imprint method. In the embossing method, as shown in Figure 11A and Figure 11B, the LED101 is transferred from the transfer material 102 to the imprint material 103 to pick it up, and as shown in Figure 11C and Figure 11D, the LED101 is attached to the connection of the panel substrate 104 film 105 on. However, since the distance between LEDs 101 depends on the pattern of the embossing material 103, the method of using the embossing material is not suitable for mass production because the design freedom is low, the chip transfer rate is also low, and it is very time-consuming.

Therefore, currently, wafer placement methods using lasers (for example, refer to Patent Documents 1 to 4) are attracting attention. Fig. 12 is a diagram schematically showing mass transfer in a laser system. In the laser method, as shown in FIGS. 12A and 12B , the LED 111 is transferred from the transfer material 112 to the release material 113 to be picked up, and as shown in FIG. 12C , the laser light is irradiated to the release material 113 to make the LED 111 land on on the connection film 115 of the panel substrate 114 . Compared with imprinted materials, the design freedom of wafer transfer using laser method is higher, and the wafer transfer takt is very fast.

However, in the chip placement method using laser, the LED is splashed and landed on the panel substrate side at a very fast speed, so, for example, as shown in FIG. etc., causing bad situation. prior art literature patent documents

Patent Document 1: Japanese Patent Laid-Open No. 2020-096144 Patent Document 2: Japanese Patent Laid-Open No. 2020-145243 Patent Document 3: Japanese Patent Laid-Open No. 2019-176154 Patent Document 4: Japanese Patent Laid-Open No. 2020-053558

[Problem to be Solved by the Invention]

This technology is proposed in view of such conventional circumstances, and provides a method of manufacturing a connection structure and a connection film capable of obtaining excellent landing properties and conductivity of chip parts by irradiation of laser light. [Technical means to solve the problem]

The manufacturing method of the bonded structure according to the present technology has the following steps: a landing step, which makes the chip part and the wiring board provided on the base material having permeability to laser light face each other, and irradiates the laser light from the side of the above-mentioned base material. The above-mentioned chip component is landed on the side of the above-mentioned wiring board; and a connecting step of connecting the above-mentioned chip component and the above-mentioned wiring board through a connection film; On the electrode surface of the above-mentioned wiring board, the above-mentioned rubber layer is made to collide with the electrode surface of the above-mentioned chip component.

The manufacturing method of the bonded structure according to the present technology has the following steps: a landing step, which makes the chip part and the wiring board provided on the base material having permeability to laser light face each other, and irradiates the laser light from the side of the above-mentioned base material. The above-mentioned chip part is landed on the side of the above-mentioned wiring board; and a connecting step of connecting the above-mentioned chip part and the above-mentioned wiring board through a connection film; the above-mentioned connection film has an adhesive layer, the above-mentioned chip part has a rubber layer on the electrode surface, and In the step, the connection film is disposed on the electrode surface of the wiring substrate, so that the adhesive layer collides with the rubber layer of the chip component.

The manufacturing method of the bonded structure according to the present technology has the following steps: a landing step, which makes the chip part and the wiring board provided on the base material having permeability to laser light face each other, and irradiates the laser light from the side of the above-mentioned base material. The above-mentioned chip component is landed on the side of the above-mentioned wiring board; and a connecting step of connecting the above-mentioned chip component and the above-mentioned wiring board through a connection film; On the electrode surface of the above-mentioned chip component, the above-mentioned rubber layer is made to collide with the electrode surface of the above-mentioned wiring board.

The manufacturing method of the bonded structure according to the present technology has the following steps: a landing step, which makes the chip part and the wiring board provided on the base material having permeability to laser light face each other, and irradiates the laser light from the side of the above-mentioned base material. The above-mentioned chip component is landed on the above-mentioned wiring board side; and a connecting step of connecting the above-mentioned chip component and the above-mentioned wiring board through a connection film; the above-mentioned connection film has an adhesive layer, the above-mentioned wiring board has a rubber layer on the electrode surface, and In the step, the connection film is disposed on the electrode surface of the chip component, so that the bonding layer collides with the rubber layer of the wiring substrate.

The connection film of this technique has a rubber layer and an adhesive layer, and the thickness of the rubber layer is not less than 0.5 μm and not more than 3.0 μm. [Effect of Invention]

According to the present technology, excellent shock absorbing property can be obtained, and thus excellent landing property of chip parts can be obtained, and excellent electrical conductivity can be obtained.

Hereinafter, embodiments of the present technology will be described in detail in the following order with reference to the drawings. 1. Manufacturing method of connected structure 2. Connecting Membrane 3. Example

＜1. Manufacturing method of bonded structure＞ [First Embodiment] The method of manufacturing the bonded structure according to the first embodiment has the following steps: a step of landing, which makes the chip component provided on the base material transparent to laser light and the wiring board face each other, and irradiates the laser light from the base material side. Landing the chip component on the above-mentioned wiring substrate side; and a connecting step of connecting the chip component and the above-mentioned wiring substrate through a connection film; the connection film has a rubber layer and an adhesive layer, and in the landing step, the connection film is arranged on the wiring substrate On the electrode surface, the rubber layer collides with the electrode surface of the chip part. Thereby, in the landing step, defects such as deviation, deformation, cracking, and falling off of the chip parts can be suppressed, and the chip parts can be transferred and arranged with high precision and high efficiency. In the connecting step, the chip parts can be worn through. The rubber layer is broken to obtain excellent conductivity, so the takt time can be shortened.

The adhesive layer in the connection film is preferably an anisotropic conductive adhesive layer containing conductive particles. Thereby, even in the case where a connection site such as eutectic solder bump is not provided in the chip component, the chip component and the wiring board can be connected. Moreover, when the electrode of a chip component becomes a protrusion shape, etc., and the wiring of a wiring board is electrically connected, the adhesive layer does not need to contain conductive particle.

As chip components, semiconductor chips, LED chips, etc. can be exemplified, and there is no particular limitation. The method of manufacturing the connection structure of this technology is suitable for mass transfer of mounting a large number of micro-sized LED chips on a wiring substrate, that is, a panel substrate.

Hereinafter, the method of manufacturing the bonded structure will be described as a method of manufacturing a display device in which a plurality of LED chips, that is, light-emitting elements, are arranged on a panel substrate, that is, a wiring substrate, to form a light-emitting element array.

As a light emitting element, a so-called flip-chip LED having a first conductivity type electrode and a second conductivity type electrode on one surface can be used. The light-emitting elements are arranged on the substrate corresponding to the sub-pixels constituting one pixel to form a light-emitting element array. For example, 1 pixel can be composed of 3 sub-pixels, R (red), G (green), B (blue), or 4 sub-pixels, RGBW (white), RGBY (yellow), or 2 sub-pixels, RG, GB constituted.

As an arrangement method of the sub-pixels, for example, in the case of RGB, a stripe arrangement, a mosaic arrangement, a triangle arrangement, and the like can be exemplified. The stripe arrangement is formed by arranging RGB into vertical stripes, which can achieve high definition. Also, the mosaic arrangement is obtained by diagonally arranging the same color of RGB, and a more natural image can be obtained than the strip arrangement. In addition, the triangular arrangement is formed by arranging RGB into a triangle and shifting each point by half a pitch according to the field, so that natural image display can be obtained.

Table 1 shows the estimated lateral pitch between RGB, estimated chip size, and estimated electrode size with respect to PPI (Pixels Per Inch) when RGB chips are arranged laterally. Assuming that the minimum distance between chips is 5 μm, it is estimated that the distance between RGB is the largest when the arrangement is at equal intervals. This is calculated as a reference value for researching this technology for specific purposes.

[Table 1] size ppi Pixel pitch (μm) Estimated horizontal spacing between RGB (μm) Estimated Die Size Estimated electrode size use inches Horizontal (mm) Longitudinal (mm) Horizontal (μm) Longitudinal (μm) Minimum (μm) Maximum (μm) Minimum (μm) Maximum (μm) Minimum (μm) Maximum (μm) large monitor 120 2657 1494 40 635 635 15 212 10×20 207×417 7×7 150×150 2657 1494 100 254 254 15 85 10×20 80×160 7×7 60×60 Large TV 80 1771 996 80 318 318 15 106 10×20 101×202 7×7 70×70 1771 996 120 212 212 15 71 10×20 66×132 7×7 45×45 medium monitor 20 443 249 100 254 254 15 85 10×20 80×160 7×7 55×55 443 249 200 127 127 15 42 10×20 37×74 7×7 25×25 flat 10 221 125 200 127 127 15 42 10×20 37×74 7×7 25×25 221 125 400 64 64 15 twenty one 10×20 16×32 7×7 10×10 SMP 6 13.26 7.47 300 85 85 15 28 10×20 23×46 7×7 15×15 13.26 7.47 500 51 51 15 17 10×20 12×24 7×7 8×8 watch 2 3.59 3.59 300 85 85 15 28 10×20 23×46 7×7 15×15 3.59 3.59 500 51 51 15 17 10×20 12×24 7×7 8×8 VR 1 1.80 1.80 500 51 51 15 17 10×20 12×24 7×7 8×8 1.80 1.80 1000 26 26 9 9 7×14 7×14 5×5 5×5 1.80 1.80 2000 13 13 4 4 - - - -

As shown in Table 1, it can be seen that by setting the wafer size to 10×20 μm, it is possible to correspond to 500 PPI. Also, by setting the wafer size to 7×14 μm, it is possible to correspond to 1000 PPI, and by further reducing the wafer size, it is possible to realize 1000 PPI or more. Furthermore, the chip does not have to be rectangular, and it can also be square.

1 to 4, the landing step (A1) of irradiating the light-emitting element to the wiring board side by irradiating laser light and the connecting step (B1) of connecting the light-emitting element to the wiring board will be described.

[Landing Step (A1)] Fig. 1 is a cross-sectional view schematically showing a state where a light-emitting element disposed on a substrate faces a connection film on a wiring substrate, and Fig. 2 is an enlarged view showing the facing light-emitting element and a connection film on a wiring substrate. As shown in FIGS. 1 and 2 , first, in the landing step ( A1 ), the wafer component substrate 10 and the wiring substrate 30 are made to face each other.

The chip component substrate 10 includes a base material 11 , a release material 12 and a light emitting element 20 , and the light emitting element 20 is attached on the surface of the release material 12 . The base material 11 only needs to be transparent to laser light, and among them, quartz glass having high light transmittance over all wavelengths is preferable.

The release material 12 is only required to have absorption properties for the wavelength of laser light, and shock waves are generated by irradiation of laser light to cause the light-emitting element 20 to splash toward the wiring board 30 side. As the release material 12, polyimide is mentioned, for example. The thickness T12 of the release material 12 is, for example, 0.5 μm or more.

The light emitting element 20 includes a body 21 , a first conductivity type electrode 22 and a second conductivity type electrode 23 , and the first conductivity type electrode 22 and the second conductivity type electrode 23 have a horizontal structure arranged on the same side. The body 21 has a cladding layer of the first conductivity _type made of, for example, n-GaN, an active layer made of, for example, an _{InxAlyGa1 -xyN} layer, and a second conductivity type of, for example, made of p-GaN The cladding layer has a so-called double heterostructure. The first conductivity type electrode 22 is formed on a part of the first conductivity type coating layer through a passivation layer, and the second conductivity type electrode 23 is formed on a part of the second conductivity type coating layer. When a voltage is applied between the first conductivity type electrode 22 and the second conductivity type electrode 23 , carriers gather in the active layer and recombine to generate light emission.

The width W20 of the light-emitting element 20 is, for example, 1-100 μm, and the thickness T20 of the light-emitting element 20 is, for example, 1-20 μm.

The wiring board 30 is provided with a circuit pattern for the first conductivity type and a circuit pattern for the second conductivity type on the base material 31, and the light-emitting elements are arranged in units of sub-pixels (sub-pixels) constituting one pixel, for example, corresponding to p There are first electrodes 32 and second electrodes 33 at the positions of the electrodes of the first conductivity type on the n side and the electrodes of the second conductivity type on the n side, respectively. In addition, circuit patterns such as data lines and address lines of matrix wiring are formed on the wiring board 30 , and light emitting elements corresponding to each sub-pixel constituting one pixel can be turned on-off. Furthermore, the wiring substrate 30 is preferably a light-transmitting substrate, the substrate 31 is preferably a transparent substrate such as glass, PET (Polyethylene Terephthalate), polyimide, and the circuit pattern, the first electrode 32 and the second electrode 33 are preferably ITO (Indium-Tin-Oxide), IZO (Indium-Zinc-Oxide), ZnO (Zinc-Oxide), IGZO (Indium-Gallium-Zinc-Oxide) and other transparent conductive films.

The connecting film 40 has a rubber layer 41 and an anisotropic conductive adhesive layer 42 as described below, and is attached to the wiring board 30 so that the side of the rubber layer 41 faces the light emitting element 20 . The rubber layer 41 is preferably one or more selected from silicone rubber and acrylic rubber. The thickness of the rubber layer 41 is preferably from 0.5 μm to 3.0 μm, more preferably from 0.5 μm to 2.0 μm, and still more preferably from 0.5 μm to 1.5 μm. Also, the rubber layer 41 preferably has voids inside, and is preferably in a shape such as a mesh shape or a protrusion shape. Thereby, the cushioning property can be improved in the landing step, and the penetration property of the light-emitting element 20 can be improved in the connecting step. The anisotropic conductive adhesive layer 42 preferably contains conductive particles 43 in a thermosetting adhesive.

The thickness T40 of the connection film 40 is, for example, 20 μm or less. Also, the distance D between the light emitting element 20 and the connecting film 40 is preferably 10-1000 μm, more preferably 50-500 μm, and still more preferably 80-200 μm.

3 is a cross-sectional view schematically showing a state where laser light is irradiated from the substrate side, and light-emitting elements are transferred to specific positions on the wiring substrate and arranged. As shown in FIGS. 2 and 3 , in the landing step ( A1 ), laser light 50 is irradiated from the substrate 11 side to transfer the light emitting element 20 to a specific position on the wiring substrate 30 and arrange it on the connection film 40 .

For the transfer of the light-emitting element 20 , for example, a laser-induced forward transfer (LIFT: Laser Induced Forward Transfer) device can be used. The laser-induced forward transfer device includes, for example: a telescope, which makes the pulsed laser light emitted from the laser device into parallel light; a shaping optical system, which shapes the spatial intensity distribution of the pulsed laser light passing through the telescope into a uniform distribution; A mask, which makes the pulsed laser light shaped by the shaping optical system pass through in a specific pattern; a field lens, which is located between the shaping optical system and the mask; and a projection lens, which reduces and projects the laser light passing through the pattern of the mask to Donor substrate: Hold the wafer component substrate 10 as the donor substrate on the donor stage, and hold the wiring substrate 30 as the receptor substrate on the receptor stage.

As a laser device, for example, an excimer laser that oscillates laser light having a wavelength of 180 nm to 360 nm can be used. The oscillation wavelength of the excimer laser is, for example, 193, 248, 308, and 351 nm, and can be appropriately selected from these oscillation wavelengths according to the light absorption of the release material 12 .

The photomask uses a pattern that forms an array of windows of a specific size at a specific pitch in such a way that the projection on the interface between the substrate 11 and the release material 12 becomes the desired array of laser light. For the photomask, the substrate 11 is patterned by, for example, chrome plating, the part of the window that is not chrome-plated penetrates the laser light, and the part that is chrome-plated blocks the laser light.

The outgoing light from the laser device enters the telescope optical system and propagates to the shaping optical system in front of it. Since the following adjustments are made to the laser light just before it is incident on the shaping optical system, that is, by means of the telescope optical system, "at any position of the laser light within the X-axis movement range of the donor stage is approximately Therefore, the laser light is always incident to the shaping optical system at approximately the same size and at the same angle (perpendicular).

The laser light that has passed through the shaping optical system enters the mask through the field lens that constitutes the telecentric reduction projection optical system on the image side in combination with the projection lens. The propagation direction of the laser light that has passed through the mask pattern becomes vertically downward through the falling mirror, and enters the projection lens. The laser light emitted from the projection lens enters from the side of the substrate 11 and is accurately projected to a specific position of the release material 12 formed on the surface (lower surface) of the mask pattern in a reduced size.

The pulse energy of the imaging laser light irradiated to the interface of the substrate 11 and the release material 12 is preferably 0.001-2 J, more preferably 0.01-1.5 J, and still more preferably 0.1-1 J. The flux (fluence) is preferably 0.001-2 J/cm ² , more preferably 0.01-1 J/cm ² , and still more preferably 0.05-0.5 J/cm ² . The pulse width (irradiation time) is preferably 0.01 to 1×10 ⁹ picoseconds, more preferably 0.1 to 1×10 ⁷ picoseconds, and still more preferably 1 to 1×10 ⁵ picoseconds. The pulse frequency is preferably from 0.1 to 10000 Hz, more preferably from 1 to 1000 Hz, further preferably from 1 to 100 Hz. The number of irradiation pulses is preferably from 1 to 30,000,000.

By using such a laser-induced forward transfer device, the release material 12 irradiated with laser light at the interface between the base material 11 and the release material 12 can generate shock waves, and the plurality of light-emitting elements 20 can be peeled off from the base material 11 and directed toward The laser-induced forward transfer of the wiring substrate 30 enables the plurality of light emitting elements 20 to land on specific positions of the wiring substrate 30 through the connection film 40 .

The connection film 40 is provided with a rubber layer 41 on the side of a plurality of light emitting elements 20, so that the impact of the light emitting element 20 ejected at an ultra-high speed when it lands can be alleviated, and defects such as deviation, deformation, cracking, and falling off of the light emitting element 20 can be suppressed, and the obtained Higher landing success rate.

[Connection procedure (B1)] Fig. 4 is a cross-sectional view schematically showing a state in which a light emitting element is mounted on a wiring board. As shown in FIG. 4 , in the connecting step ( B1 ), the light emitting elements 20 arranged at specific positions on the wiring board 30 are mounted.

As a method of thermocompression-bonding the light-emitting element 20 to the wiring board 30, a connection method used in a known anisotropic conductive film can be appropriately selected and used. As thermocompression bonding conditions, for example, the temperature is 150° C. to 260° C., the pressure is 5 MPa to 60 MPa, and the time is 5 seconds to 300 seconds.

The rubber layer 41 of the connecting film 40 is pierced by the first conductive type electrode 22 and the second conductive type electrode 23 of the light emitting element 20 during thermocompression bonding. Then, the conductive particles 43 of the anisotropic conductive adhesive layer 42 are sandwiched between the first conductive type electrode 22 and the second conductive type electrode 23 of the light emitting element 20 and the first electrode 32 and the second electrode 33 of the wiring substrate 30, The anisotropic conductive film is formed by hardening the adhesive of the anisotropic conductive adhesive layer 42 .

According to the method of manufacturing a bonded structure according to the first embodiment, the connection film having the rubber layer and the adhesive layer is disposed on the electrode surface of the wiring board, and the rubber layer collides with the electrode surface of the chip component, whereby, in the landing step, it is possible to Inhibit chip parts from deflecting, deforming, cracking, falling off, etc., and transfer and arrange chip parts with high precision and high efficiency, and in the connecting step, chip parts can be pierced through the rubber layer to obtain excellent results Continuity.

In the first embodiment, the connection film is attached to the entire surface on the wiring board, but for example, a mass transfer technique may be used to transfer a single piece of the connection film to the electrode position on the wiring board. By selectively attaching the connection film only to the position where the chip components fly instead of attaching the entire surface, for example, the transparency of the light-emitting element array can be improved.

[Second Embodiment] In the first embodiment, the connection film having the rubber layer and the adhesive layer was placed on the wiring board, but the rubber layer may be placed on the electrode surface of the chip component and the adhesive layer may be placed on the wiring board.

That is, the method of manufacturing the bonded structure according to the second embodiment has the following steps: a landing step, which makes the chip component provided on the base material having transparency to laser light and the wiring board face each other, and irradiates from the side of the base material The chip part is landed on the wiring board side by laser light; and a connection step is performed to connect the chip part and the wiring board via a connection film; the connection film has an adhesive layer, the chip part has a rubber layer on the electrode surface, and in the landing step, The connection film is arranged on the electrode surface of the wiring board, so that the adhesive layer collides with the rubber layer of the chip part.

Hereinafter, similarly to the first embodiment, regarding the method of manufacturing the bonded structure, a landing step in a method of manufacturing a display device in which a plurality of LED chips, that is, light-emitting elements are arranged on a panel substrate, that is, a wiring substrate, to form a light-emitting element array ( A2) and connection steps (B2) will be described. In addition, the same code|symbol is attached|subjected to the same structure as 1st Embodiment, and description is abbreviate|omitted.

[Landing Step (A2)] 5 is a cross-sectional view schematically showing a state in which a light-emitting element provided on a substrate and having a rubber layer on an electrode surface faces an anisotropic conductive adhesive layer on a wiring substrate. As shown in FIG. 5 , first, in the landing step ( A2 ), the wafer component substrate 10 and the wiring substrate 30 are made to face each other.

The chip component substrate 10 includes a base material 11 , a release material 12 and a light emitting element 20 , and the light emitting element 20 is attached on the surface of the release material 12 . In addition, a rubber layer 51 is attached to the electrode surface of the light emitting element 20 . The rubber layer 51 is the same as the rubber layer 41 in the first embodiment, so description thereof will be omitted.

The connection film 50 is composed of an anisotropic conductive adhesive layer 52 , and is pasted on the first electrode 32 and the second electrode 33 of the wiring substrate 30 . The anisotropic conductive adhesive layer 22 is the same as the anisotropic conductive adhesive layer 42 in the first embodiment, so description thereof is omitted.

In the landing step (A2), the rubber layer 51 attached to the light-emitting element 20 can alleviate the impact of the light-emitting element 20 ejected at ultra-high speed when it lands on the anisotropic conductive adhesive layer 52, and suppress the deviation and deformation of the light-emitting element 20 , cracking, falling off and other defects, and obtain a higher success rate of landing.

[Connection procedure (B2)] In the connection step (B2), the light emitting elements 20 arranged at specific positions on the wiring board 30 are mounted. The method of thermocompression bonding the light emitting element 20 to the wiring board 30 is the same as that of the first embodiment. The rubber layer 51 attached to the light emitting element 20 is pierced by the first conductive type electrode 22 and the second conductive type electrode 23 of the light emitting element 20 during thermocompression bonding. Then, the conductive particles 53 of the anisotropic conductive adhesive layer 52 are sandwiched between the first conductive type electrode 22 and the second conductive type electrode 23 of the light emitting element 20 and the first electrode 32 and the second electrode 33 of the wiring substrate 30, By curing the adhesive of the anisotropic conductive adhesive layer 52, an anisotropic conductive film is formed.

According to the method of manufacturing the bonded structure of the second embodiment, the rubber layer is disposed on the electrode surface of the chip component, the connection film composed of the adhesive layer is disposed on the electrode surface of the wiring board, and the rubber layer collides with the connection film, thereby, In the landing step, defects such as deviation, deformation, cracking, and falling off of the chip parts can be suppressed, and the chip parts can be transferred and arranged with high precision and high efficiency, and in the connecting step, the chip parts can be pierced through the rubber layer to obtain excellent conductivity.

[third embodiment] In the first embodiment, the connection film having the rubber layer and the adhesive layer was disposed on the wiring board, but the connection film may also be disposed on the electrode surface of the chip component.

That is, the manufacturing method of the bonded structure according to the third embodiment has the following steps: a step of landing, which makes the chip component provided on the base material transparent to laser light and the wiring board face each other, and irradiates the laser beam from the base material side. irradiating light to make the chip part land on the wiring board side; and a connecting step of connecting the chip part and the wiring board through a connection film; the connection film has a rubber layer and an adhesive layer, and in the landing step, the connection film is arranged on the chip part On the electrode surface, the rubber layer collides with the electrode surface of the wiring board.

Hereinafter, similarly to the first embodiment, regarding the method of manufacturing the bonded structure, a landing step in a method of manufacturing a display device in which a plurality of LED chips, that is, light-emitting elements are arranged on a panel substrate, that is, a wiring substrate, to form a light-emitting element array ( A3) and connection steps (B3) will be described. In addition, the same code|symbol is attached|subjected to the same structure as 1st Embodiment, and description is abbreviate|omitted.

[Landing Step (A3)] 6 is a cross-sectional view schematically showing a state in which a light-emitting element provided on a substrate and having a connection film on an electrode surface faces a wiring board. As shown in FIG. 6 , first, in the landing step ( A2 ), the wafer component substrate 10 and the wiring substrate 30 are made to face each other.

The chip component substrate 10 includes a base material 11 , a release material 12 and a light emitting element 20 , and the light emitting element 20 is attached on the surface of the release material 12 . Moreover, the connection film 60 is attached to the electrode surface of the light emitting element 20 .

The connection film 60 has a rubber layer 61 and an anisotropic conductive adhesive layer 62 , and the side of the rubber layer 61 faces the wiring board 30 . The rubber layer 61 and the anisotropic conductive adhesive layer 62 are the same as those of the rubber layer 41 and the anisotropic conductive adhesive layer 42 in the first embodiment, and thus description thereof will be omitted.

In the landing step (A3), the rubber layer 61 attached to the light-emitting element 20 can relieve the impact of the light-emitting element 20 ejected at ultra-high speed when it lands on the electrode surface of the wiring board 30, and suppress the light-emitting element 20 from shifting, deforming, Cracking, shedding and other defects, and a higher landing success rate.

[Connection procedure (B3)] In the connection step ( B3 ), the light emitting elements 20 arranged at specific positions on the wiring board 30 are mounted. The method of thermocompression bonding the light emitting element 20 to the wiring board 30 is the same as that of the first embodiment. The rubber layer 61 attached to the light emitting element 20 is pierced by the conductive particles 63 of the anisotropic conductive adhesive layer 62 during thermocompression bonding. Then, the conductive particles 63 of the anisotropic conductive adhesive layer 62 are sandwiched between the first conductive type electrode 22 and the second conductive type electrode 23 of the light emitting element 20 and the first electrode 32 and the second electrode 33 of the wiring substrate 30, By curing the adhesive of the anisotropic conductive adhesive layer 62, an anisotropic conductive film is formed.

According to the method of manufacturing a bonded structure according to the third embodiment, the connection film having the rubber layer and the adhesive layer is arranged on the electrode surface of the chip component, and the rubber layer collides with the electrode surface of the wiring board, whereby, in the landing step, it is possible to Suppressing chip components from deflecting, deforming, cracking, falling off, etc., transferring and arranging chip components with high precision and high efficiency, and obtaining excellent conductivity during the connection step.

[Fourth Embodiment] In the first embodiment, the connection film having the rubber layer and the adhesive layer was arranged on the wiring board, but it is also possible to arrange the adhesive layer on the electrode surface of the chip component and arrange the rubber layer on the wiring board.

That is, the manufacturing method of the bonded structure according to the fourth embodiment has the following steps: a landing step, which makes the chip component provided on the base material transparent to laser light and the wiring board face each other, and irradiates the laser beam from the base material side. irradiating light to make the chip parts land on the wiring board side; and a connecting step, which connects the chip parts and the wiring board through a connecting film; the connecting film has an adhesive layer, and the wiring board has a rubber layer on the electrode surface, and in the landing step, connecting The film is placed on the electrode surface of the chip component, so that the adhesive layer collides with the rubber layer of the wiring board.

Hereinafter, similarly to the first embodiment, regarding the method of manufacturing the bonded structure, a landing step in a method of manufacturing a display device in which a plurality of LED chips, that is, light-emitting elements are arranged on a panel substrate, that is, a wiring substrate, to form a light-emitting element array ( A4) and connection steps (B4) will be described. In addition, the same code|symbol is attached|subjected to the same structure as 1st Embodiment, and description is abbreviate|omitted.

[Landing Step (A4)] 7 is a cross-sectional view schematically showing a state in which a light-emitting element provided on a substrate and having an anisotropic conductive adhesive layer on an electrode surface faces a rubber layer on a wiring board. As shown in FIG. 7 , first, in the landing step ( A4 ), the wafer component substrate 10 and the wiring substrate 30 are made to face each other.

The chip component substrate 10 includes a base material 11 , a release material 12 and a light emitting element 20 , and the light emitting element 20 is attached on the surface of the release material 12 . In addition, a connection film 70 composed of an anisotropic conductive adhesive layer 72 is attached to the electrode surface of the light emitting element 20 . The anisotropic conductive adhesive layer 72 is the same as the anisotropic conductive adhesive layer 42 in the first embodiment, so description thereof is omitted.

Furthermore, rubber layers 71 are attached to positions on the first electrode 32 and the second electrode 33 of the wiring board 30 . The rubber layer 71 is the same as the rubber layer 41 in the first embodiment, so description thereof will be omitted.

In the landing step (A4), the rubber layer 71 attached to the wiring substrate 30 can alleviate the impact of the light-emitting element 20 ejected at ultra-high speed when it lands, and suppress the light-emitting element 20 from causing defects such as deviation, deformation, cracking, and falling off. Obtain a higher landing success rate.

[Connection procedure (B4)] In the connection step ( B4 ), the light emitting elements 20 arranged at specific positions on the wiring board 30 are mounted. The method of thermocompression bonding the light emitting element 20 to the wiring board 30 is the same as that of the first embodiment. The rubber layer 71 attached to the wiring substrate 30 is pierced by the conductive particles 73 of the anisotropic conductive adhesive layer 72 during thermocompression bonding. Then, the conductive particles 73 of the anisotropic conductive adhesive layer 72 are sandwiched between the first conductive type electrode 22 and the second conductive type electrode 23 of the light emitting element 20 and the first electrode 32 and the second electrode 33 of the wiring substrate 30, By curing the adhesive of the anisotropic conductive adhesive layer 72, an anisotropic conductive film is formed.

According to the method of manufacturing a bonded structure according to the fourth embodiment, a connection film composed of an adhesive layer is arranged on the electrode surface of the chip component, a rubber layer is arranged on the electrode surface of the wiring board, and the adhesive layer collides with the rubber layer, thereby, In the landing step, defects such as deviation, deformation, cracking, and falling off of the chip parts can be suppressed, and the chip parts can be transferred and arranged with high precision and high efficiency, and excellent conductivity can be obtained in the connecting step.

＜2. Connecting membrane＞ The connecting film of this embodiment has a rubber layer and an adhesive layer, and the thickness of the rubber layer is not less than 0.5 μm and not more than 3.0 μm. Thereby, it is possible to improve the landing rate when using, for example, a case where a chip component is dropped on a wiring board by mass transfer of laser light, and excellent conductivity can be obtained.

The adhesive layer is preferably an anisotropic conductive adhesive layer containing conductive particles. Thereby, even in the case where the connection part, such as a solder bump, is not provided in a chip part, it becomes possible to connect a chip part and a wiring board. In addition, the anisotropic conductive adhesive layer is preferably constituted so that conductive particles are aligned in one direction, and the conductive particles are preferably distributed on the side of the wiring board in the thickness direction. Thereby, the capture property of the conductive particle between the electrode of a chip component and the electrode of a wiring board can be improved. Furthermore, in the case where the electrode of the chip component becomes a protruding shape and is electrically connected to the wiring of the wiring board, the adhesive layer may not contain conductive particles.

Fig. 8 is a cross-sectional view schematically showing a first configuration example of the connecting film. As shown in FIG. 8 , the connection film 40 has a rubber layer 41 and an anisotropic conductive adhesive layer 42 containing conductive particles 43 .

The rubber layer 41 is not particularly limited, as long as it is an elastic body with high cushioning properties (impact absorption). As specific examples, for example, silicone rubber, acrylic rubber, butadiene rubber, polyurethane (polyurethane ) resin (polyurethane elastomer), etc. Among them, the rubber layer 41 is preferably one or more selected from silicone rubber and acrylic rubber.

The thickness of the rubber layer 41 is preferably from 0.5 μm to 3.0 μm, more preferably from 0.5 μm to 2.0 μm, and still more preferably from 0.5 μm to 1.5 μm. If the thickness of the rubber layer 41 is too small, it tends to be difficult to obtain shock absorption, and if the thickness of the rubber layer 41 is too large, it tends to be difficult to obtain conductivity.

The durometer A (durometer A) hardness of the rubber layer 41 is preferably 20-40, more preferably 20-35, and still more preferably 20-30. When the hardness of the durometer A is too high, the rubber layer is too hard, and the chip parts are prone to deformation, cracking and other defects. When the hardness of the durometer A is too low, the rubber layer 41 is too soft, and the chip parts It is easy to produce bad tendency such as offset. The durometer A hardness of the rubber layer 41 can be measured according to JIS K 6253 and using the durometer A as rubber hardness (Japanese Industrial Standard JIS-A hardness).

The storage modulus of the rubber layer 41 in the dynamic viscoelasticity test using an indentation test device at a temperature of 30°C and a frequency of 200 Hz is preferably 60 MPa or less, more preferably 40 MPa or less, and still more preferably 30 MPa or less. When the storage modulus is too high at a temperature of 30°C and a frequency of 200 Hz, it cannot absorb the impact of the chip parts ejected at high speed by laser irradiation, and the transfer rate of the chip parts tends to decrease. For the storage modulus of the rubber layer 41 at a temperature of 30°C and a frequency of 200 Hz, an indentation test device can be used, and for example, a flat punch with a diameter of 100 μm is used, and the target indentation depth is set to 1 μm. The measurement is performed by sweeping in the range of 1 to 200 Hz.

The anisotropic conductive adhesive layer 42 may also be a so-called anisotropic conductive film (ACF: Anisotropic Conductive Film) containing conductive particles 43 . As the conductive particles, those used in known anisotropic conductive films can be appropriately selected and used. For example, metal particles such as nickel, copper, silver, gold, palladium, and solder; metal-coated resin particles obtained by coating the surface of resin particles such as polyamide and polybenzoguanamine with metals such as nickel and gold, and the like. Thereby, even in the case where no connecting portion such as a solder bump is provided in the chip component, conduction can be achieved.

In addition, the anisotropic conductive adhesive layer 42 is preferably configured so that the conductive particles 43 are aligned in the plane direction. Constructed by aligning conductive particles in the plane direction, the surface density of the particles can be made uniform, and very excellent conductivity can be obtained. In addition, the anisotropic conductive adhesive layer 42 is preferably such that the conductive particles 43 are segregated on the wiring board side in the thickness direction. For example, in the above-mentioned first embodiment, the conductive particles 43 in the anisotropic conductive adhesive layer 42 may be distributed on the side opposite to the surface of the rubber layer 41, and in the above-mentioned third embodiment, each The conductive particles 43 in the anisotropic conductive adhesive layer 42 are located on the surface side of the rubber layer 41 . Thereby, the capture property of the conductive particle between the electrode of a chip component and the electrode of a wiring board can be improved.

The particle size of the conductive particles 43 is not particularly limited, but the lower limit of the particle size is preferably 1 μm or more. For example, from the viewpoint of the capture efficiency of the conductive particles in the bonded structure, the upper limit of the particle size is preferably 50 μm, for example. Below, more preferably below 20 μm. In addition, the particle diameter of an electrically-conductive particle can be made into the value measured with the image type particle size distribution analyzer (FPIA-3000: Malvern company make as an example). The number is 1000 or more, preferably 2000 or more. Also, the surface density of the conductive particles can be determined according to the electrode area of the chip component, etc., and can be set in the range of 500 to 140000 pcs/mm ² , for example.

The anisotropic conductive adhesive layer 42 is preferably composed of a thermosetting adhesive containing a film-forming resin, a thermosetting resin, and a curing agent. The thermosetting adhesive is not particularly limited, for example, thermal anionic polymer resin composition containing epoxy compound and thermal anionic polymerization initiator, thermal anionic polymer resin composition containing epoxy compound and thermal cationic polymerization initiator Cationic polymerizable resin composition, thermal radical polymerizable resin composition containing (meth)acrylate compound and thermal radical polymerization initiator, etc. In addition, a (meth)acrylate compound means including both an acrylic monomer (oligomer) and a methacrylic monomer (oligomer).

Among the thermosetting adhesives, it is preferable that the thermosetting resin contains epoxy compound and the curing agent is a thermal cationic polymerization initiator. Thereby, the hardening reaction by laser light can be suppressed, and it can harden rapidly by heat. Hereinafter, as a specific example, a thermal cationic polymerizable resin composition containing a film-forming resin, an epoxy compound, and a thermal cationic polymerizable initiator will be described as an example.

The film-forming resin is, for example, a high-molecular-weight resin corresponding to an average molecular weight of 10,000 or more, and preferably has an average molecular weight of about 10,000 to 80,000 from the viewpoint of film-forming properties. As the film forming resin, various resins such as phenoxy resins, polyester resins, polyurethane resins, polyester urethane resins, acrylic resins, polyimide resins, butyral resins, etc. may be used alone or Can be used in combination of 2 or more. Among these, it is preferable to use a phenoxy resin from the viewpoint of the film formation state, connection reliability, and the like. The content of the film-forming resin in the anisotropic conductive adhesive layer is preferably 20-50 wt%, more preferably 25-45 wt%, and still more preferably 30-40 wt%.

The epoxy compound is not particularly limited, as long as it is an epoxy compound having more than one epoxy group in the molecule, for example, it can be bisphenol A type epoxy resin, bisphenol F type epoxy resin, etc., or it can be Polyurethane modified epoxy resin. Among them, high-purity bisphenol A type epoxy resin can be preferably used. As a specific example of the high-purity bisphenol A type epoxy resin, the product called "YL980" by Mitsubishi Chemical Corporation is mentioned, for example. The content of the epoxy compound in the anisotropic conductive adhesive layer is preferably 10-55 wt%, more preferably 15-50 wt%, and still more preferably 20-45 wt%.

As the thermal cationic polymerization initiator, those known as thermal cationic polymerization initiators of epoxy compounds can be used, for example, known salts of iodonium and cerium that generate acids capable of cationic polymerizing cationic polymerizable compounds by heat can be used. Salts, phosphonium salts, ferrocenes, etc. Among them, aromatic cobaltium salts showing good potential to temperature can be preferably used. As a specific example of the polymerization initiator of the aromatic cobaltium salt system, for example, a product named "SI-60L" manufactured by Sanshin Chemical Industry Co., Ltd. may be mentioned. The content of the thermal cationic polymerization initiator in the anisotropic conductive adhesive layer is preferably 1-20 wt%, more preferably 2-15 wt%, further preferably 3-12 wt%.

Furthermore, inorganic fillers, silane coupling agents, diluting monomers, fillers, softeners, colorants, flame retardants, thixotropic agents, etc. can also be blended as other additions in thermosetting adhesives. thing.

As the inorganic filler, silica, talc, titanium oxide, calcium carbonate, magnesium oxide, and the like can be used. The inorganic fillers may be used alone or in combination of two or more. The content of the inorganic filler in the anisotropic conductive adhesive layer is preferably 1-30 wt%, more preferably 5-25 wt%, even more preferably 10-20 wt%. When two or more inorganic fillers are used in combination, it is preferable that the total content of the inorganic fillers in the thermosetting adhesive be within the above-mentioned range.

The lower limit of the thickness of the anisotropic conductive adhesive layer 42 can be the same as the particle diameter of the conductive particles, for example, preferably it can be set at 1.3 times or more than the diameter of the conductive particles or at least 3 μm. In addition, the upper limit of the thickness of the connection film can be set to, for example, 20 μm or less or twice the particle diameter of the conductive particles or less. In addition, the connection film may be laminated with an adhesive layer or an adhesive layer not containing conductive particles, and the number of layers or laminated layers may be appropriately selected according to the object or purpose. Moreover, as an insulating resin of an adhesive layer or an adhesive layer, the thing similar to that of a connection film can be used. The film thickness can be measured using a known micrometer or digital thickness gauge. The film thickness may be obtained by measuring, for example, at 10 or more locations and averaging them.

[modified example] In the first configuration example, the rubber layer preferably has voids inside, and is preferably in a shape such as a mesh shape or a protrusion shape. Thereby, the shock absorbability is improved by the air layer, so that the dropping rate of the chip parts can be improved. In addition, when chip parts are connected, the chip parts are easy to break through the rubber layer, so excellent on-resistance can be obtained.

FIG. 9(A) is a plan view showing two rubber layers having voids inside by processing, and FIG. 9(B) is a cross-sectional view schematically showing a second configuration example of the connecting film. As shown in FIG. 9 , a connection film 80 as a second configuration example has a rubber layer 81 and an anisotropic conductive adhesive layer 82 containing conductive particles 83 . The rubber layer 81 is formed by laminating the first rubber layer 81A and the second rubber layer 81B, and is formed, for example, in a mesh shape (mesh shape). The first rubber layer 81A and the second rubber layer 81B have a plurality of holes formed on the surface, for example, by using a plurality of convex molds to harden the rubber. In addition, the rubber layer 81 can also be, for example, a porous layer instead of a mesh type. In addition, the anisotropic conductive adhesive layer 82 is the same as the anisotropic conductive adhesive layer 42 , so description thereof is omitted.

Fig. 10 is a cross-sectional view schematically showing a third configuration example of the connecting film. As shown in FIG. 10 , a connection film 90 as a third configuration example has a rubber layer 91 and an anisotropic conductive adhesive layer 92 containing conductive particles 93 . The rubber layer 91 has, for example, a protrusion shape (protrusion type), and for example, a plurality of holes are formed on the surface by hardening the rubber using a plurality of convex molds. In addition, the anisotropic conductive adhesive layer 92 is the same as the anisotropic conductive adhesive layer 42 , so description thereof is omitted.

Since the rubber layer has voids inside as in the modified example, the impact absorption property is improved, and the dropping rate of the chip parts can be improved. In addition, the penetration property of the rubber layer is improved, so that excellent conduction resistance can be obtained. Example

<3. Example> In the examples, a wafer part provided on quartz glass was opposed to a bonding film provided on a glass substrate, and laser light was irradiated from the base material side to land the chip part on the bonding film to evaluate landing performance. Moreover, the connection structure was produced, and the conductivity was evaluated. Furthermore, the present technology is not limited to these embodiments.

[Production of anisotropic conductive adhesive layer] Prepare the following materials. Phenoxy resin (trade name: PKHH, manufactured by Pakistan Chemical Industry Co., Ltd.) High-purity bisphenol A type epoxy resin (trade name: YL-980, manufactured by Mitsubishi Chemical Corporation) Hydrophobic silica (trade name: RY200, manufactured by NIPPON AEROSIL CO., LTD.) Cationic polymerization initiator (trade name: SI-60L, manufactured by Sanshin Chemical Industry Co., Ltd.) Conductive particles (average particle size 3 μm, resin core metal-coated fine particles, Ni-plated thickness 0.2 μm, manufactured by Sekisui Chemical Co., Ltd.)

As shown in Table 2, specific mass parts of each material were mixed to form an anisotropic conductive adhesive layer with a thickness of 6 μm on a glass substrate with a thickness of 0.5 mm. The anisotropic conductive adhesive layer is formed, for example, by the method described in Japanese Patent No. 6187665, by aligning conductive particles on one side of the adhesive layer so that the surface density of the particles becomes 58000 pcs/mm ² .

[Table 2] Material Blending amount [parts by mass] Phenoxy resin 35 High Purity Bisphenol A Type Epoxy Resin 40 Hydrophobic silica 15 cationic polymerization initiator 10

[Evaluation of landing performance of chip parts] Using a laser-induced forward transfer device (MT-30C200), the wafer parts set on the quartz glass are dropped to the connecting film on the glass substrate. The chip part (30×50 μm in shape, 5 μm in thickness, and 2 μm in electrode thickness) uses TEG (Test Element Group), and a release material (polyimide) is set between the quartz glass and the chip part.

As mentioned above, the laser-induced forward transfer device includes: a telescope, which makes the pulsed laser light emitted from the laser device into parallel light; and a shaping optical system, which shapes the spatial intensity distribution of the pulsed laser light passing through the telescope to be uniform. distribution; a photomask, which passes the pulsed laser light shaped by the shaping optical system in a specific pattern; a field lens, which is located between the shaping optical system and the photomask; and a projection lens, which passes the laser light passing through the pattern of the photomask Reduce the projection to the donor substrate; hold the quartz substrate with the wafer parts held by the release material as the donor substrate on the donor stage, and hold the glass substrate attached with the connection film as the acceptor substrate on the acceptor stage , set the distance between the chip part and the connection film to 100 μm.

The laser device uses an excimer laser whose oscillation wavelength is set to 248 nm. The pulse energy of the laser light is set to 600 J, the flux (fluence) is set to 150 J/cm ² , the pulse width (irradiation time) is set to 30000 picoseconds, the pulse frequency is set to 0.01 kHz, and the number of irradiation pulses is set to each ACF 1 small piece is 1 pulse. The pulse energy of the imaging laser light irradiated to the interface between the anisotropic conductive adhesive layer and the substrate is 0.001-2 J, the flux (fluence) is 0.001-2 J/cm ² , and the pulse width (irradiation time) is 0.01 ~1×10 ⁹ picoseconds, the pulse frequency is 0.1~10000 Hz, and the number of irradiation pulses is 1~30,000,000.

The photomask uses a pattern in which windows of a specific size are arranged at a specific pitch in such a way that the projection on the interface between the quartz glass as the donor substrate and the release material becomes the outline of the wafer part 30×50 μm.

A total of 100 chip components were transferred to the bonding film, and the number of chip components that normally landed on the bonding film was counted by a microscope. The ratio of normal landing chip parts is more than 90%.

[Creation of connection structure] The chip parts were dropped on the connection film of the wiring board, and thermocompression bonding was carried out under the conditions of temperature of 170°C, pressure of 10 MPa, and time of 30 sec to produce a connection structure. Chip parts (outline 50 μm×50 μm, thickness 150 μm) use TEG (Test Element Group). A glass substrate (thickness 0.5 mm, Ti/Al/Ti pattern (Ti/Al/Ti pattern) 12 μm×12 μm) was used as the wiring substrate.

[Evaluation of Continuity] The conduction resistance of the connection structure was measured using the conduction wiring on the wiring board side. The evaluation of continuity is based on the resistance value to make the following judgments from A to D. Desirably, it is judged to be C or higher. A: 50Ω or less B: More than 50 Ω and less than 100 Ω C: More than 100 Ω and less than 200 Ω D: more than 200Ω

[Example 1] After coating polysiloxane (trade name: STP-106T-UV, manufactured by Shin-Etsu Chemical Co., Ltd.), UV (ultraviolet) curing was performed to form a polysiloxane rubber layer with a thickness of 1 μm. Then, a polysiloxane rubber layer with a thickness of 1 μm was pasted on the surface of the anisotropic conductive adhesive layer with a thickness of 6 μm to form a connection film.

In addition, the silicone rubber was measured in accordance with JIS K 6253 using a durometer A for rubber hardness (Japanese Industrial Standard JIS-A hardness). As a result, the rubber hardness was 30. Also, a dynamic viscoelasticity test was performed on the polysiloxane rubber using an indentation tester (iMicro-type nanoindenter manufactured by KLA Corporation). Use a flat punch with a diameter of 100 μm, set the target indentation depth to 1 μm, scan the frequency range from 1 to 200 Hz, and measure the storage modulus at a temperature of 30°C and a frequency of 200 Hz. The Poisson's ratio of the sample was set to 0.5, and the average value of 12 measurement points of each sample was calculated. As a result, the storage modulus was 27 MPa.

As shown in Table 3, the chip landing rate when the chip parts were dropped on the silicone rubber layer of the bonding film was 98%. Moreover, the evaluation of the conduction resistance of the connection structure which thermocompression-bonded the chip component and the wiring board via the connection film was "B".

[Example 2] A connecting film was produced in the same manner as in Example 1 except that a silicone rubber layer having a thickness of 0.5 μm was produced.

As shown in Table 3, the chip landing rate when the chip parts were dropped on the silicone rubber layer of the bonding film was 90%. Moreover, the evaluation of the conduction resistance of the connection structure which thermocompression-bonded the chip component and the wiring board via the connection film was "A".

[Example 3] A connecting film was produced in the same manner as in Example 1 except that a silicone rubber layer having a thickness of 2.0 μm was produced.

As shown in Table 3, the drop rate of the chip when the chip part was dropped on the silicone rubber layer of the tie film was 100%. Also, the evaluation of the on-resistance of the bonded structure in which the chip component and the wiring board were bonded by thermocompression through the bond film was "C".

[Example 4] After coating polysiloxane (trade name: STP-106T-UV, manufactured by Shin-Etsu Chemical Co., Ltd.) in a thickness of 1 μm, a plurality of holes with a diameter of 1 μm were processed by convex embossing, and UV (Ultraviolet) hardened to make a silicone rubber layer. Then, two silicone rubber layers were adjusted so that the total thickness became 2 μm, and they were bonded to the surface of the anisotropic conductive adhesive layer with a thickness of 6 μm (grid type) to form a connection film.

As shown in Table 3, the drop rate of the chip when the chip part was dropped on the silicone rubber layer of the tie film was 100%. Moreover, the evaluation of the conduction resistance of the connection structure which thermocompression-bonded the chip component and the wiring board via the connection film was "A".

[Example 5] Polysiloxane (trade name: STP-106T-UV, manufactured by Shin-Etsu Chemical Co., Ltd.) is coated to a specific thickness, and a plurality of holes with a diameter of 1 μm are processed by convex embossing, and UV is performed (ultraviolet) hardening to produce a silicone rubber layer with a protrusion height of 1 μm or more and a total thickness of 2 μm. Then, the polysiloxane rubber layer was pasted on the surface of the anisotropic conductive adhesive layer (protrusion type) with a thickness of 6 μm to form a connection film.

As shown in Table 3, the drop rate of the chip when the chip part was dropped on the silicone rubber layer of the tie film was 100%. Moreover, the evaluation of the conduction resistance of the connection structure which thermocompression-bonded the chip component and the wiring board via the connection film was "A".

[Comparative example 1] The polysiloxane rubber layer was not pasted on the surface of the anisotropic conductive adhesive layer, but only the anisotropic conductive adhesive layer with a thickness of 6 μm was used as a connecting film.

As shown in Table 3, the wafer landing rate when the wafer components were dropped on the anisotropic conductive adhesive layer was 20%. Moreover, the evaluation of the conduction resistance of the connection structure which thermocompression-bonded the chip component and the wiring board via the connection film was "A".

[Comparative example 2] With respect to 80 parts by mass of polysiloxane (trade name: STP-106T-UV, manufactured by Shin-Etsu Chemical Co., Ltd.), conductive particles (average particle size 3 μm, resin core metal-coated fine particles, Ni plating thickness 0.2 μm) were mixed , manufactured by Sekisui Chemical Industry Co., Ltd.) 20 parts by mass, coated on a glass substrate with a thickness of 0.5 mm and subjected to UV curing to make a polysiloxane rubber layer containing conductive particles with a thickness of 6 μm, and use it as a connection membrane.

As shown in Table 3, the drop rate of the chip when the chip component was dropped on the silicone rubber layer containing conductive particles was 100%. Also, the evaluation of the on-resistance of the bonded structure in which the chip component and the wiring board were bonded by thermocompression through the bond film was "D".

[table 3] Example 1 Example 2 Example 3 Example 4 Example 5 Comparative example 1 Comparative example 2 membrane morphology Anisotropic conductive adhesive layer + rubber layer Anisotropic conductive adhesive layer + rubber layer Anisotropic conductive adhesive layer + rubber layer Anisotropic conductive adhesive layer + rubber layer (grid type) Anisotropic conductive adhesive layer + rubber layer (protrusion type) Anisotropic conductive adhesive layer Rubber layer containing conductive particles Rubber layer thickness [μm] 1.0 0.5 2.0 2.0 2.0 0 0 Wafer landing rate[%] 98 90 100 100 100 20 100 Evaluation of on-resistance B A C A A A D.

As shown in Table 3, in Comparative Example 1, no polysiloxane rubber layer was provided on the anisotropic conductive adhesive layer, so the drop rate of the wafer was low. In Comparative Example 2, the connection film is a polysiloxane rubber layer containing conductive particles, so the evaluation of the on-resistance is not good.

On the other hand, in Examples 1-5, the polysiloxane rubber layer is provided on the anisotropic conductive adhesive layer, so a higher chip landing rate can be obtained. Also, in Examples 4 and 5, the polysiloxane rubber layer is grid-shaped, protruding, etc., and has voids inside, so chip parts can easily penetrate the polysiloxane rubber layer, and good evaluation of on-resistance can be obtained .

10: Chip parts substrate 11: Substrate 12: release material 20: Light emitting element 21: Ontology 22: The first conductivity type electrode 23: The second conductivity type electrode 30: Wiring substrate 31: Substrate 32: 1st electrode 33: 2nd electrode 40: Connecting Membrane 41: rubber layer 42: Anisotropic conductive adhesive layer 50: connecting membrane 51: rubber layer 52: Anisotropic conductive adhesive layer 60: Connecting membrane 61: rubber layer 62: Anisotropic conductive adhesive layer 70: Connecting Membrane 71: rubber layer 72: Anisotropic conductive adhesive layer 80: Connecting membrane 81: rubber layer 82: Anisotropic conductive adhesive layer 83: Conductive particles 90: Connecting Membrane 91: rubber layer 92: Anisotropic conductive adhesive layer 93: Conductive particles 101:LED 102: transfer printing material 103: Embossed material 104:Panel substrate 105: Connecting membrane 111:LED 112: transfer printing material 113: release material 114: Panel substrate 115: connecting membrane

[ Fig. 1 ] is a cross-sectional view schematically showing a state where a light-emitting element provided on a base and a connection film on a wiring board face each other. [FIG. 2] It is an enlarged view showing the connection film on the facing light-emitting element and the wiring board. [ Fig. 3 ] is a cross-sectional view schematically showing a state where laser light is irradiated from the substrate side, and light-emitting elements are transferred to specific positions on the wiring board and arranged. [ Fig. 4 ] is a cross-sectional view schematically showing a state in which a light-emitting element is mounted on a wiring board. [ Fig. 5 ] is a cross-sectional view schematically showing a state in which a light-emitting element provided on a base material and having a rubber layer on an electrode surface and an anisotropic conductive adhesive layer on a wiring board face each other. [ Fig. 6] Fig. 6 is a cross-sectional view schematically showing a state in which a light-emitting element provided on a substrate and having a connection film on an electrode surface faces a wiring board. [ Fig. 7 ] is a cross-sectional view schematically showing a state in which a light-emitting element provided on a substrate and having an anisotropic conductive adhesive layer on an electrode surface faces a rubber layer on a wiring board. [ Fig. 8 ] is a cross-sectional view schematically showing a first configuration example of a connecting film. [ Fig. 9 ] (A) is a plan view showing two rubber layers having voids inside by processing, and (B) is a cross-sectional view schematically showing a second configuration example of the connecting film. [ Fig. 10 ] is a cross-sectional view schematically showing a third configuration example of the connecting film. [ Fig. 11 ] is a diagram schematically showing mass transfer in the imprint method. [ Fig. 12 ] is a diagram schematically showing mass transfer by a laser method.

10: Chip parts substrate

11: Substrate

12: release material

20: Light emitting element

21: Ontology

22: The first conductivity type electrode

23: The second conductivity type electrode

30: Wiring substrate

31: Substrate

32: 1st electrode

33: 2nd electrode

40: Connecting Membrane

41: rubber layer

42: Anisotropic conductive adhesive layer

43: Conductive particles

Claims (19)

A method for manufacturing a bonded structure, comprising the following steps: a landing step, which makes a chip component provided on a base material transparent to laser light and a wiring board face each other, and irradiates laser light from the side of the base material. The above-mentioned chip component lands on the above-mentioned wiring board side; and a connecting step of connecting the above-mentioned chip component and the above-mentioned wiring board via a connection film; The connecting film has a rubber layer and an adhesive layer, and In the landing step, the connection film is arranged on the electrode surface of the wiring board so that the rubber layer collides with the electrode surface of the chip component. A method for manufacturing a bonded structure, comprising the following steps: a landing step, which makes a chip component provided on a base material transparent to laser light and a wiring board face each other, and irradiates laser light from the side of the base material. The above-mentioned chip component is landed on the above-mentioned wiring substrate side; and a connecting step of connecting the above-mentioned chip component and the above-mentioned wiring substrate via a connection film; The above connecting film has an adhesive layer, The above chip part has a rubber layer on the electrode surface, and In the landing step, the connection film is arranged on the electrode surface of the wiring board so that the adhesive layer collides with the rubber layer of the chip component. A method for manufacturing a bonded structure, comprising the following steps: a landing step, which makes a chip component provided on a base material transparent to laser light and a wiring board face each other, and irradiates laser light from the side of the base material. The above-mentioned chip component lands on the above-mentioned wiring board side; and a connecting step of connecting the above-mentioned chip component and the above-mentioned wiring board via a connection film; The connecting film has a rubber layer and an adhesive layer, and In the landing step, the connection film is arranged on the electrode surface of the chip component so that the rubber layer collides with the electrode surface of the wiring board. A method for manufacturing a bonded structure, comprising the following steps: a landing step, which makes a chip component provided on a base material transparent to laser light and a wiring board face each other, and irradiates laser light from the side of the base material. The above-mentioned chip component lands on the above-mentioned wiring board side; and a connecting step of connecting the above-mentioned chip component and the above-mentioned wiring board via a connection film; The above connecting film has an adhesive layer, The above wiring board has a rubber layer on the electrode surface, and In the landing step, the connection film is arranged on the electrode surface of the chip component so that the adhesive layer collides with the rubber layer of the wiring board. The method for manufacturing a bonded structure according to any one of claims 1 to 4, wherein the rubber layer is one or more selected from acrylic rubber and silicone rubber. The method for manufacturing a bonded structure according to any one of claims 1 to 5, wherein the rubber layer has a thickness of not less than 0.5 μm and not more than 3.0 μm. The method for manufacturing a bonded structure according to any one of claims 1 to 6, wherein the rubber layer has voids inside. The method for manufacturing a connected structure according to any one of Claims 1 to 7, wherein the durometer A hardness of the above-mentioned rubber layer is 20 to 40, and the temperature and frequency of the dynamic viscoelasticity test using an indentation test device are 30°C The storage modulus at 200 Hz is below 60 MPa. The method of manufacturing a bonded structure according to any one of claims 1 to 8, wherein the adhesive layer contains a film-forming resin, a thermosetting resin, and a curing agent. The method of manufacturing a bonded structure according to any one of claims 1 to 9, wherein the adhesive layer contains conductive particles. The method of manufacturing a bonded structure according to claim 10, wherein the bonding layer is formed by aligning the conductive particles in a plane direction. The method of manufacturing a bonded structure according to any one of Claims 1 to 11, wherein the chip component is a light emitting element. A connecting film having a rubber layer and an adhesive layer, and The thickness of the rubber layer is not less than 0.5 μm and not more than 3.0 μm. The connecting film according to claim 13, wherein the rubber layer is one or more selected from acrylic rubber and polysiloxane rubber. The connecting film according to claim 13 or 14, wherein the rubber layer has voids inside. The connecting film according to any one of claims 13 to 15, wherein the durometer A hardness of the rubber layer is 20 to 40, and the temperature of the dynamic viscoelasticity test using the intrusion test device is 30°C and the frequency is 200 Hz. The modulus is below 60 MPa. The connecting film according to any one of claims 13 to 16, wherein the adhesive layer contains a film-forming resin, a thermosetting resin, and a curing agent. The connection film according to any one of claims 13 to 17, wherein the adhesive layer contains conductive particles. The connection film according to claim 18, wherein the above-mentioned adhesive layer is formed by aligning the above-mentioned conductive particles in the plane direction.

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