TW202342834A - Iii-v族化合物半導體單晶基板及其製造方法 - Google Patents

Iii-v族化合物半導體單晶基板及其製造方法 Download PDF

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Publication number
TW202342834A
TW202342834A TW112107773A TW112107773A TW202342834A TW 202342834 A TW202342834 A TW 202342834A TW 112107773 A TW112107773 A TW 112107773A TW 112107773 A TW112107773 A TW 112107773A TW 202342834 A TW202342834 A TW 202342834A
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Taiwan
Prior art keywords
mentioned
single crystal
main surface
iii
compound semiconductor
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TW112107773A
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English (en)
Chinese (zh)
Inventor
佐田野正崇
鴻池一暁
柳澤拓弥
橋尾克司
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日商住友電氣工業股份有限公司
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Publication of TW202342834A publication Critical patent/TW202342834A/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02609—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02634—Homoepitaxy

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Weting (AREA)
TW112107773A 2022-04-27 2023-03-03 Iii-v族化合物半導體單晶基板及其製造方法 TW202342834A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PCT/JP2022/019084 WO2023209867A1 (ja) 2022-04-27 2022-04-27 Ｉｉｉ－ｖ族化合物半導体単結晶基板およびその製造方法
WOPCT/JP2022/019084 2022-04-27

Publications (1)

Publication Number Publication Date
TW202342834A true TW202342834A (zh) 2023-11-01

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TW112107773A TW202342834A (zh) 2022-04-27 2023-03-03 Iii-v族化合物半導體單晶基板及其製造方法

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Country Link
US (1) US20250201555A1 (enrdf_load_stackoverflow)
EP (1) EP4516975A1 (enrdf_load_stackoverflow)
JP (1) JPWO2023209867A1 (enrdf_load_stackoverflow)
CN (1) CN119053733A (enrdf_load_stackoverflow)
TW (1) TW202342834A (enrdf_load_stackoverflow)
WO (1) WO2023209867A1 (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI875626B (zh) * 2023-11-13 2025-03-01 日商Ｊｘ金屬股份有限公司 磷化銦基板及半導體磊晶晶圓
TWI875627B (zh) * 2023-11-13 2025-03-01 日商Ｊｘ金屬股份有限公司 磷化銦基板及半導體磊晶晶圓

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025126448A1 (ja) * 2023-12-15 2025-06-19 住友電気工業株式会社 リン化インジウム単結晶基板、リン化インジウム単結晶、およびリン化インジウム単結晶の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0742191B2 (ja) * 1986-05-12 1995-05-10 住友電気工業株式会社 化合物半導体単結晶の製造方法及び装置
JPH01139223A (ja) * 1987-11-26 1989-05-31 Sumitomo Electric Ind Ltd 化合物半導体単結晶の円形ウエハの製造方法
JPH0710678A (ja) * 1993-06-25 1995-01-13 Asahi Glass Co Ltd 化合物半導体単結晶ウエハ及びその製造方法並びにエピタキシャル成長方法
CN101307500B (zh) 2003-05-07 2013-02-13 住友电气工业株式会社 含有掺杂剂的磷化铟单晶及其制造方法
WO2011043777A1 (en) * 2009-10-08 2011-04-14 Axt, Inc. Crystal growth apparatus and method
EP2891731A4 (en) * 2012-08-29 2015-09-23 Toyota Motor Co Ltd FESTELECTROLYTEIN CRYSTAL WITH A PEROVSKITE STRUCTURE AND METHOD OF MANUFACTURING THEREOF
JP6969230B2 (ja) 2017-08-30 2021-11-24 住友金属鉱山株式会社 単結晶育成方法及び単結晶育成装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI875626B (zh) * 2023-11-13 2025-03-01 日商Ｊｘ金屬股份有限公司 磷化銦基板及半導體磊晶晶圓
TWI875627B (zh) * 2023-11-13 2025-03-01 日商Ｊｘ金屬股份有限公司 磷化銦基板及半導體磊晶晶圓

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JPWO2023209867A1 (enrdf_load_stackoverflow) 2023-11-02
EP4516975A1 (en) 2025-03-05
WO2023209867A1 (ja) 2023-11-02
US20250201555A1 (en) 2025-06-19
CN119053733A (zh) 2024-11-29

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