TW202341284A - 混成鍵結絕緣膜形成材料、半導體裝置的製造方法以及半導體裝置 - Google Patents

混成鍵結絕緣膜形成材料、半導體裝置的製造方法以及半導體裝置 Download PDF

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Publication number
TW202341284A
TW202341284A TW111147927A TW111147927A TW202341284A TW 202341284 A TW202341284 A TW 202341284A TW 111147927 A TW111147927 A TW 111147927A TW 111147927 A TW111147927 A TW 111147927A TW 202341284 A TW202341284 A TW 202341284A
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TW
Taiwan
Prior art keywords
insulating film
group
acid
organic insulating
semiconductor
Prior art date
Application number
TW111147927A
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English (en)
Chinese (zh)
Inventor
米田聡
足立憲哉
小林香織
松川大作
Original Assignee
日商艾曲迪微系統股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Application filed by 日商艾曲迪微系統股份有限公司 filed Critical 日商艾曲迪微系統股份有限公司
Publication of TW202341284A publication Critical patent/TW202341284A/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/037—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polyamides or polyimides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Formation Of Insulating Films (AREA)
  • Adhesives Or Adhesive Processes (AREA)
TW111147927A 2022-04-06 2022-12-14 混成鍵結絕緣膜形成材料、半導體裝置的製造方法以及半導體裝置 TW202341284A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022063655 2022-04-06
JP2022-063655 2022-04-06

Publications (1)

Publication Number Publication Date
TW202341284A true TW202341284A (zh) 2023-10-16

Family

ID=88242644

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111147927A TW202341284A (zh) 2022-04-06 2022-12-14 混成鍵結絕緣膜形成材料、半導體裝置的製造方法以及半導體裝置

Country Status (3)

Country Link
JP (1) JP7845459B2 (https=)
TW (1) TW202341284A (https=)
WO (1) WO2023195202A1 (https=)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4840014B2 (ja) * 2006-07-31 2011-12-21 日立化成デュポンマイクロシステムズ株式会社 ポジ型感光性樹脂組成物、パターン硬化膜の製造方法および電子部品
JP5169446B2 (ja) * 2008-04-28 2013-03-27 日立化成デュポンマイクロシステムズ株式会社 感光性樹脂組成物、該樹脂組成物を用いたポリベンゾオキサゾール膜、パターン硬化膜の製造方法及び電子部品
JP2012188633A (ja) * 2011-03-14 2012-10-04 Panasonic Corp 熱硬化性樹脂組成物、金属箔付き樹脂シート、及びフレキシブルプリント配線板
JP6085920B2 (ja) * 2012-09-10 2017-03-01 日立化成株式会社 感光性樹脂組成物、フィルム状接着剤、接着シート、接着剤パターン、接着剤層付半導体ウェハ及び半導体装置
JP2016009159A (ja) * 2014-06-26 2016-01-18 日立化成株式会社 ポジ型感光性接着剤組成物、接着剤パターン、接着剤層付半導体ウェハ及び半導体装置
EP3165554A4 (en) * 2014-07-02 2018-02-28 Toyo Ink SC Holdings Co., Ltd. Heat-curable resin composition, polyamide, adhesive sheet, cured article, and printed wiring board
JP2020094194A (ja) * 2018-11-30 2020-06-18 東レ株式会社 樹脂組成物、樹脂シート、硬化膜、硬化膜のレリーフパターンの製造方法、保護膜、絶縁膜、電子部品および表示装置
JP7543712B2 (ja) * 2020-06-12 2024-09-03 株式会社レゾナック 半導体装置の製造方法

Also Published As

Publication number Publication date
JP7845459B2 (ja) 2026-04-14
JPWO2023195202A1 (https=) 2023-10-12
WO2023195202A1 (ja) 2023-10-12

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