TW202336445A - Method for adjusting temperature of chip - Google Patents

Abstract

The present disclosure provides a method for adjusting a temperature of a chip. The method includes: detecting temperature data of a reference chip with a temperature sensor for a plurality of times, when the temperature data of the reference chip is not in a preset temperature region, a first temperature compensation value and a second temperature compensation value can be ensured according to the temperature data of the reference chip and a preset temperature, wherein the first temperature compensation value is configured to adjust a temperature of an adapter, and the second temperature compensation value is configured to adjust a temperature of a test bench; and while testing a chip to be tested, a temperature of the adapter is adjusted with a first temperature adjusting unit, and a temperature of the test bench is adjusted with a second temperature adjusting unit.

Description

A kind of wafer temperature adjustment method

This application relates to the field of wafer testing, and in particular to a wafer temperature adjustment method.

When testing the wafer to be tested, the temperature of the wafer to be tested needs to be adjusted to a preset test temperature range, and then the test is performed.

In the temperature control method of testing equipment in the related art, the testing equipment is provided with at least one joint on the machine platform. The temperature control device of the joint includes a heating plate and a temperature sensor provided on the joint block, and is provided on the joint block. There is a cooling chip above the heating chip, and a radiator is provided above the cooling chip; when the joint block contacts the electronic component for testing, not only the heating chip can be used to heat the electronic component to the test temperature, but also when the temperature of the electronic component exceeds When testing the temperature, the cold end under the cooling chip can also be used to quickly cool down the electronic components, so that the electronic components can be tested within the preset test temperature range, thereby ensuring the test pass rate of the product. In the above technical solution, the heating plate and the cold end are used to adjust the temperature of the connector, and then the temperature of the test equipment is adjusted. However, the temperature sensor provided on the connector can only obtain the surface temperature of the electronic components and is easily affected by the environment. Due to the influence of temperature changes, the accuracy of this temperature control method is low.

According to various embodiments of the present application, a wafer temperature adjustment method for use in a test equipment is provided. The test equipment includes a jointer, a test seat arranged in cooperation with the jointer, and the jointer and the test seat are cooperatively configured for placement. A test chamber for the wafer to be tested. A temperature sensor is provided in the test chamber. The test equipment also includes a first temperature adjustment unit for adjusting the temperature of the jointer and a first temperature adjustment unit for adjusting the temperature of the test socket. Second temperature adjustment unit, the method includes: using the temperature sensor to obtain temperature data of a reference wafer multiple times, wherein the reference wafer is selected from the same batch of wafers to be tested; when the temperature data of the reference wafer When it is not within the preset temperature interval, based on the temperature data of the reference wafer and the preset temperature value of the reference wafer, a first temperature compensation value for adjusting the temperature of the jointer and a first temperature compensation value for adjusting the temperature of the jointer are determined. a second temperature compensation value for adjusting the temperature of the test seat; when the wafer to be tested is tested, controlling the first temperature adjustment unit to adjust the temperature of the jointer based on the first temperature compensation value, and The second temperature adjustment unit is controlled to adjust the temperature of the test seat based on the second temperature compensation value so that the temperature of the wafer to be tested is within a preset temperature interval.

In some embodiments, determining the first temperature compensation value for adjusting the temperature of the jointer based on the temperature data of the reference wafer and the preset temperature value of the reference wafer includes: based on the Referring to the temperature data of the wafer, obtain the corresponding temperature data curve; based on the temperature data curve, obtain the starting temperature value of the wafer to be tested; and based on the starting temperature value and the preset temperature value, determine the first Temperature compensation value.

In some embodiments, determining the first temperature compensation value based on the starting temperature value and the preset temperature value includes: based on the difference between the starting temperature value and the preset temperature value and the corresponding first temperature value. A proportional coefficient determines the first temperature compensation value.

In some embodiments, determining the first temperature compensation value based on the difference between the starting temperature value and the preset temperature value and the corresponding first proportional coefficient includes: assuming the starting temperature value is T ₁ , the preset temperature value is P, the difference between the starting temperature value and the preset temperature value is X, and the first proportional coefficient is M, then the X, the P and the T ₁ satisfy The following relational expression: X=PT ₁ , the first temperature compensation value A satisfies the following relational expression: A=X*M

In some embodiments, determining the second temperature compensation value for adjusting the temperature of the test socket based on the temperature data of the reference wafer and the preset temperature value of the reference wafer includes: based on the Referring to the temperature data of the wafer, obtain the corresponding temperature data curve; based on the temperature data curve, obtain the average temperature value after the temperature of the wafer to be tested reaches stability; and based on the average temperature value and the preset temperature value, determine Second temperature compensation value.

In some embodiments, determining the second temperature compensation value based on the average temperature value and the preset temperature value includes: based on the difference between the average temperature value and the preset temperature value and the corresponding second ratio coefficient to determine the second temperature compensation value.

In some embodiments, determining the second temperature compensation value based on the difference between the average temperature value and the preset temperature value and the corresponding second proportional coefficient includes: assuming the average temperature value is T ₂ , the preset temperature value is P, the difference between the average temperature value and the preset temperature value is Y, and the second proportional coefficient is N, then the Y, the P and the T ₂ satisfy the following Relational expression: Y=PT ₂ , then the second temperature compensation value B satisfies the following relational expression: B=Y*N

In some embodiments, the temperature sensor includes a first temperature sensor disposed on the bonder and a second temperature sensor disposed on the test seat. The first temperature sensor is used to obtain the first temperature of the reference wafer multiple times. data, the second temperature sensor is used to obtain the second temperature data of the reference wafer multiple times; based on the temperature data of the reference wafer and the preset temperature value of the reference wafer, it is determined to determine the temperature of the reference wafer. The first temperature compensation value for adjusting the temperature of the bonder and the second temperature compensation value for adjusting the temperature of the test socket include: first based on the first temperature data of the reference wafer and the preset temperature value, Determine the first temperature compensation value, and then determine the second temperature compensation value based on the second temperature data of the reference wafer and the preset temperature value.

In some embodiments, the first temperature compensation value is determined based on the first temperature data of the reference wafer and a preset temperature value, and then the first temperature compensation value is determined based on the second temperature data of the reference wafer and the preset temperature value. The temperature value determines the second temperature compensation value including: using the bonder to absorb the reference wafer, using the first temperature sensor to obtain the first temperature data of the reference wafer multiple times, based on the temperature of the reference wafer The data and the preset temperature value of the reference wafer are used to determine the first temperature compensation value; after the reference wafer is placed on the test seat using the splicer, the second temperature sensor is used to obtain the data multiple times. The second temperature compensation value is determined based on the second temperature data of the reference wafer and the preset temperature value.

In some embodiments, the temperature sensor includes a first temperature sensor disposed on the bonder and a second temperature sensor disposed on the test seat. The first temperature sensor is used to obtain the first temperature of the reference wafer multiple times. data, the second temperature sensor is used to obtain the second temperature data of the reference wafer multiple times; based on the temperature data of the reference wafer and the preset temperature value of the reference wafer, it is determined to determine the temperature of the reference wafer. The first temperature compensation value for adjusting the temperature of the bonder and the second temperature compensation value for adjusting the temperature of the test seat include: determining based on the first temperature data of the reference wafer and a preset temperature value. The first temperature compensation value determines the second temperature compensation value based on the second temperature data of the reference wafer and the preset temperature value.

In some embodiments, the temperature sensor includes a first temperature sensor disposed on the bonder and a second temperature sensor disposed on the test seat. The first temperature sensor is used to obtain the first temperature of the reference wafer multiple times. data, the second temperature sensor is used to obtain the second temperature data of the reference wafer multiple times, and based on the temperature data of the reference wafer and the preset temperature value of the reference wafer, it is determined to determine the temperature of the reference wafer. The first temperature compensation value for adjusting the temperature of the bonder and the second temperature compensation value for adjusting the temperature of the test socket include: first based on the second temperature data of the reference wafer and the preset temperature value, Determine the second temperature compensation value, and then determine the first temperature compensation value based on the first temperature data of the reference wafer and a preset temperature value.

The details of one or more embodiments of the application are set forth in the drawings and description below. Other features, objects, and advantages of the present application will become apparent from the specification, drawings, and claims.

In order to make the purpose, technical solutions and advantages of the present application clearer, the present application will be further described in detail below in conjunction with the drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present application and are not used to limit the present application.

It should be noted that the terms "first", "second", etc. in the description and patent scope of this application and the above drawings are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence.

The method embodiments provided in the embodiments of this application can be applied to the testing equipment 100 . Figure 1 is a schematic structural diagram of the test equipment 100 in the embodiment of the present application. As shown in Figure 1, the test equipment 100 includes a connector 101 and a test seat 102 arranged in cooperation with the connector 101. The connector 101 and the test seat 102 cooperate to form a test chamber 103 for placing the wafer 1031 to be tested. In the test chamber 103 A temperature sensor 1032 is provided inside, and it also includes a first temperature adjustment unit 104 for adjusting the temperature of the adapter 101 and a second temperature adjustment unit 105 for adjusting the temperature of the test seat 102 .

In some embodiments, the first temperature adjustment unit 104 includes a heating rod disposed on the adapter 101 and a low-temperature flow channel for inputting low-temperature gas, and the second temperature adjustment unit 105 includes a flow channel for inputting high-temperature or low-temperature gas. . It should be noted that the first temperature adjustment unit 104 and the second temperature adjustment unit 105 may also adopt other temperature adjustment structures, which are not limited in this embodiment.

In some embodiments, as shown in FIG. 2 , a wafer temperature adjustment method is provided. This method is explained by taking the method applied to the test equipment 100 in FIG. 1 as an example, and includes the following steps.

S201: Use the temperature sensor 1032 to obtain temperature data of the reference wafer 1031a multiple times.

Among them, the reference wafer 1031a is selected from the same batch of wafers 1031 to be tested, and the temperatures of the wafers 1031 to be tested in the same batch are basically the same.

S202: When the temperature data of the reference wafer 1031a is not within the preset temperature range, based on the temperature data of the reference wafer 1031a and the preset temperature value, determine the first temperature compensation value for adjusting the temperature of the bonder 101 and The second temperature compensation value is used to adjust the temperature of the test seat 102 .

When the wafer to be tested 1031 is tested, the temperature of the wafer to be tested 1031 needs to be adjusted to a preset temperature range. In this embodiment, the reference wafer 1031a is used as a reference. If the temperature of the reference wafer 1031a is within the preset temperature range, there is no need to adjust the temperature of the wafer to be tested 1031; if the temperature of the reference wafer 1031a is not within the preset temperature range, Within the interval, it is necessary to determine the first temperature compensation value for adjusting the temperature of the adapter 101 and the second temperature compensation value for adjusting the temperature of the test seat 102. Through the first temperature compensation value and the second temperature compensation value, the The temperature of the reference wafer 1031a is adjusted to a preset temperature range. It should be noted that the preset temperature range can be set according to actual needs.

S203: When testing the wafer 1031 to be tested, control the first temperature adjustment unit 104 to adjust the temperature of the bonder 101 based on the first temperature compensation value, and control the second temperature adjustment unit 105 to adjust the test socket based on the second temperature compensation value. The temperature of the wafer 102 is adjusted so that the temperature of the wafer 1031 to be tested is within a preset temperature range.

In the related art, the temperature of the wafer to be tested is adjusted only through the bonder 101 . In this embodiment, when the wafer to be tested is tested, the first temperature adjustment unit 104 is controlled to adjust the temperature of the bonder 101 based on the first temperature compensation value and the second temperature adjustment unit 105 is controlled to adjust the test temperature based on the second temperature compensation value. The temperature of the seat 102 is adjusted, that is, by adjusting the temperature of the jointer 101 and the test seat 102. In addition to using the jointer 101 to adjust the temperature of the wafer 1031 to be tested, the test seat 102 is also used to adjust the location of the wafer 1031 to be tested. Since the ambient temperature is closer to the actual temperature of the wafer to be tested 1031, compared to the related art of only adjusting the temperature of the wafer to be tested through the jointer 101, the accuracy of the temperature adjustment of the wafer to be tested in this embodiment is higher. .

It should also be noted that the related technology needs to obtain the temperature compensation value of the wafer to be tested during each test process, and then adjust the temperature. Therefore, the temperature adjustment efficiency of the wafer to be tested is low. In this embodiment, the reference wafer 1031a is selected from the same batch of wafers 1031 to be tested. Since the temperatures of the wafers 1031 to be tested in the same batch are basically the same, the first temperature compensation value for adjusting the temperature of the bonder 101 and the first temperature compensation value for adjusting the temperature of the bonder 101 can be determined based on the temperature data of the reference wafer 1031a and the preset temperature value. A second temperature compensation value for adjusting the temperature of the test seat 102 . Then the first temperature compensation value and the second temperature compensation value are used as the temperature adjustment compensation value of the wafer to be tested 1031, without the need to re-obtain the temperature adjustment compensation value of the wafer to be tested 1031 during each test process, thereby improving the efficiency of the test. The temperature adjustment efficiency of the wafer 1031 also improves the testing efficiency of the wafer 1031 to be tested.

In some embodiments, as shown in FIG. 3 , based on the temperature data of the reference wafer 1031a and the preset temperature value, determining the first temperature compensation value for adjusting the temperature of the bonder 101 includes the following steps.

S301: Based on the temperature data of the reference wafer 1031a, obtain the corresponding temperature data curve.

The collected temperature data is discrete data and cannot be directly analyzed. Therefore, the temperature data is processed with a smoothing algorithm to make it have curve characteristics and the temperature data curve is obtained.

S302: Based on the temperature data curve, obtain the starting temperature value of the chip 1031 to be tested.

S303: Determine the first temperature compensation value based on the starting temperature value and the preset temperature value.

The first temperature compensation value is determined based on the difference between the starting temperature value and the preset temperature value and the corresponding first proportional coefficient. Among them, the first proportional coefficient is set according to the actual adjustment demand.

Specifically, as shown in Figure 4, assume that the starting temperature value is defined as T ₁ , the preset temperature value is defined as P, and the difference between the starting temperature value and the preset temperature value is defined as X. The first The proportional coefficient is defined as M, then the X, the P and the T ₁ satisfy the following relationship: X=PT ₁ , and the first temperature compensation value is defined as A and satisfies the following relationship: A=X*M .

The first temperature compensation value is obtained by multiplying the difference between the initial temperature value and the preset temperature value by the first proportional coefficient, and the first temperature compensation value is used to adjust the temperature of the adapter 101 .

In some embodiments, as shown in FIG. 5 , based on the temperature data of the reference wafer 1031a and the preset temperature value, determining the second temperature compensation value for adjusting the temperature of the test seat 102 includes the following steps.

S401: Based on the temperature data of the reference wafer 1031a, obtain the corresponding temperature data curve.

The collected temperature data is discrete data and cannot be directly analyzed. Therefore, the temperature data is processed with a smoothing algorithm to make it have curve characteristics and the temperature data curve is obtained.

S402: Based on the temperature data curve, obtain the average temperature value after the temperature of the chip 1031 to be tested reaches stability.

S403: Determine the second temperature compensation value based on the average temperature value and the preset temperature value.

The second temperature compensation value is determined based on the difference between the average temperature value and the preset temperature value and the corresponding second proportional coefficient. Among them, the second proportional coefficient is set according to the actual adjustment demand.

Specifically, as shown in Figure 6, assume that the average temperature value after the temperature of the wafer to be tested 1031 reaches a stable state is defined as T ₂ , the preset temperature value is defined as P, and the difference between the average temperature value and the preset temperature value The value is defined as Y, the second proportional coefficient is defined as N, then the Y, the P and the T ₂ satisfy the following relationship: Y=PT ₂ , then the second temperature compensation value is defined as B and satisfies The following relationship: B=Y*N.

The second temperature compensation value is determined by multiplying the difference between the average temperature value and the preset temperature value by the second proportional coefficient, and the second temperature compensation value is used to adjust the temperature of the test seat 102 .

In some embodiments, the temperature sensor 1032 includes a first temperature sensor 1032a disposed on the bonder 101 and a second temperature sensor 1032b disposed on the test seat 102. The first temperature sensor 1032a is used to acquire the first temperature of the reference wafer 1031a multiple times. Temperature data, the second temperature sensor 1032b is used to obtain the second temperature data of the reference wafer 1031a multiple times. Method for determining a first temperature compensation value for adjusting the temperature of the bonder 101 and a second temperature compensation value for adjusting the temperature of the test socket 102 based on the temperature data of the reference wafer 1031a and the preset temperature value The method is: first determine the first temperature compensation value based on the first temperature data of the reference wafer 1031a and the preset temperature value, and then determine the second temperature compensation value based on the second temperature data of the reference wafer 1031a and the preset temperature value.

Specifically, the splicer 101 sucks the reference wafer 1031a, and uses the first temperature sensor 1032a to acquire the first temperature data of the reference wafer 1031a multiple times during the sucking process. Based on the first temperature data of the reference wafer 1031a and the preset temperature value, A first temperature compensation value is determined, and the temperature of the adapter 101 is adjusted using the first temperature compensation value. The method of determining the first temperature compensation value has been described in the above embodiments and will not be described again here. After the splicer 101 places the reference wafer 1031a on the test seat 102, it uses the second temperature sensor 1032b to acquire the second temperature data of the reference wafer 1031a multiple times, and determines the second temperature data of the reference wafer 1031a based on the second temperature data of the reference wafer 1031a and the preset temperature value. second temperature compensation value, and then use the second temperature compensation value to adjust the temperature of the test seat 102 . The method of determining the second temperature compensation value has been described in the above embodiment and will not be described again here.

In the above embodiment, the bonder 101 uses the first temperature compensation value to adjust the temperature of the bonder 101 during the process of absorbing the reference wafer 1031a, and then uses the second temperature compensation after the wafer 1031 to be tested is placed in the test chamber 103. By adjusting the temperature of the test seat 102, the temperature of the wafer to be tested 1031 can be adjusted more quickly than adjusting the temperature of the splicer 101 and the test seat 102 after the wafer 1031 is placed in the test chamber 103. Secondly, the first temperature compensation value is used to initially adjust the temperature of the adapter 101, and then the second temperature compensation value is used to finely adjust the temperature of the test seat 102, thereby making the temperature adjustment more accurate.

In some embodiments, the temperature sensor 1032 includes a first temperature sensor 1032a disposed on the bonder 101 and a second temperature sensor 1032b disposed on the test seat 102. The first temperature sensor 1032a is used to acquire the first temperature of the reference wafer 1031a multiple times. Temperature data, the second temperature sensor 1032b is used to obtain the second temperature data of the reference wafer 1031a multiple times. Method for determining a first temperature compensation value for adjusting the temperature of the bonder 101 and a second temperature compensation value for adjusting the temperature of the test socket 102 based on the temperature data of the reference wafer 1031a and the preset temperature value The steps are: determining the first temperature compensation value based on the first temperature data of the reference wafer 1031a and the preset temperature value, and determining the second temperature compensation value based on the second temperature data of the reference wafer 1031a and the preset temperature value.

In the above embodiment, after the bonder 101 puts the reference wafer 1031a into the test seat 102, the first temperature data is acquired, and at the same time, the test seat 102 acquires the second temperature data. Since the first temperature compensation value and the second temperature compensation value are simultaneously used to adjust the temperatures of the adapter 101 and the test seat 102 respectively, the adjustment time is shorter.

In some embodiments, the temperature sensor 1032 includes a first temperature sensor 1032a disposed on the bonder 101 and a second temperature sensor 1032b disposed on the test seat 102. The first temperature sensor 1032a is used to acquire the first temperature of the reference wafer 1031a multiple times. Temperature data, the second temperature sensor 1032b is used to obtain the second temperature data of the reference wafer 1031a multiple times. Method for determining a first temperature compensation value for adjusting the temperature of the bonder 101 and a second temperature compensation value for adjusting the temperature of the test socket 102 based on the temperature data of the reference wafer 1031a and the preset temperature value The method is: first determine the second temperature compensation value based on the second temperature data of the reference wafer 1031a and the preset temperature value, and then determine the first temperature compensation value based on the first temperature data of the reference wafer 1031a and the preset temperature value.

In the above embodiment, by placing the reference wafer 1031a into the test chamber 103, determining the second temperature compensation value according to the second temperature data of the reference wafer 1031a, using the second temperature compensation value to adjust the temperature of the test socket 102, and then bonding The device 101 is pressed down to obtain the first temperature data to determine the first temperature compensation value, and the temperature of the bonder 101 is adjusted using the first temperature compensation value, so that the temperature of the wafer to be tested 1031 can be accurately adjusted.

It should be understood that although each step in the above flowchart is shown in sequence as indicated by the arrows, these steps are not necessarily executed in the order indicated by the arrows. Unless explicitly stated in the application, the execution order of these steps is not strictly limited, and these steps can be executed in other orders. Moreover, at least part of the steps in the above flow chart may include multiple steps or multiple stages. These steps or stages are not necessarily executed at the same time, but may be executed at different times. The execution order of these steps or stages is also It does not necessarily need to be performed sequentially, but may be performed in turn or alternately with other steps or at least part of steps or stages in other steps.

The technical features of the above embodiments can be combined in any way. To simplify the description, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, all possible combinations should be used. It is considered to be within the scope of this manual.

The above-described embodiments only express several implementation modes of the present application, and their descriptions are relatively specific and detailed, but they should not be construed as limiting the scope of the invention patent. It should be noted that, for those with ordinary knowledge in the technical field to which the present invention belongs, several modifications and improvements can be made without departing from the concept of the present application, and these all fall within the protection scope of the present application. Therefore, the scope of protection of this patent application shall be subject to the scope of the attached patent application.

100: test equipment 101: splicer 102: test seat 103: test chamber 104: first temperature adjustment unit 105: second temperature adjustment unit 1031: wafer to be tested 1031a: reference wafer 1032: temperature sensor 1032a: first temperature sensor 1032b : Second temperature sensor S201 ~ S203: Steps S301 ~ S303: Steps S401 ~ S403: Step T ₁ : Starting temperature value T ₂ : Average temperature value

To better describe and illustrate embodiments and/or examples of those applications disclosed herein, reference may be made to one or more of the drawings. The additional details or examples used to describe the drawings should not be construed as limiting the scope of any of the disclosed applications, the embodiments and/or examples presently described, and the best mode currently understood of these applications. Figure 1 is a schematic structural diagram of a test device according to one or more embodiments. FIG. 2 is a schematic flowchart of a wafer temperature adjustment method according to one or more embodiments. FIG. 3 is a schematic flowchart of determining a first temperature compensation value according to one or more embodiments. Figure 4 is a schematic diagram of starting temperature values in a temperature data curve according to one or more embodiments. FIG. 5 is a schematic flowchart of determining a second temperature compensation value according to one or more embodiments. FIG. 6 is a schematic diagram of a stabilized average temperature value in a temperature data curve according to one or more embodiments.

S201~S203: steps

Claims (11)

A wafer temperature adjustment method for testing equipment. The testing equipment includes an adapter, a test seat arranged in cooperation with the adapter, a test chamber formed by the adapter and the test seat for placing the wafer to be tested. A first temperature adjustment unit for adjusting the temperature of the adapter and a second temperature adjustment unit for adjusting the temperature of the test seat, wherein a temperature sensor is provided in the test chamber, characterized in that: The methods include: Using the temperature sensor to obtain temperature data of a reference wafer multiple times, wherein the reference wafer is selected from the wafers to be tested in the same batch; When the temperature data of the reference wafer is not within the preset temperature interval, a third step for adjusting the temperature of the bonder is determined based on the temperature data of the reference wafer and the preset temperature value of the reference wafer. a temperature compensation value and a second temperature compensation value used to adjust the temperature of the test socket; and When testing the wafer to be tested, the first temperature adjustment unit is controlled to adjust the temperature of the bonder based on the first temperature compensation value, and the second temperature adjustment unit is controlled to adjust the temperature of the bonder based on the first temperature compensation value. The two temperature compensation values adjust the temperature of the test seat so that the temperature of the wafer to be tested is within the preset temperature interval. The method of claim 1, wherein the first temperature compensation value for adjusting the temperature of the bonder is determined based on the temperature data of the reference wafer and the preset temperature value of the reference wafer. include: Based on the temperature data of the reference wafer, obtain the corresponding temperature data curve; Based on the temperature data curve, obtain the starting temperature value of the wafer to be tested; and A first temperature compensation value is determined based on the starting temperature value and the preset temperature value. The method of claim 2, wherein determining the first temperature compensation value based on the starting temperature value and the preset temperature value includes: The first temperature compensation value is determined based on the difference between the starting temperature value and the preset temperature value and the corresponding first proportional coefficient. The method of claim 3, wherein determining the first temperature compensation value based on the difference between the starting temperature value and the preset temperature value and the corresponding first proportional coefficient includes: assuming The starting temperature value is T ₁ , the preset temperature value is P, the difference between the starting temperature value and the preset temperature value is X, and the first proportional coefficient is M, then the X, the P and the T ₁ satisfy the following relationship: X=PT ₁ , and the first temperature compensation value A satisfies the following relationship: A=X*M. The method of claim 1, wherein the second temperature compensation value for adjusting the temperature of the test socket is determined based on the temperature data of the reference wafer and the preset temperature value of the reference wafer. include: Based on the temperature data of the reference wafer, obtain the corresponding temperature data curve; Based on the temperature data curve, obtain the average temperature value after the temperature of the wafer to be tested reaches a stable state; and Based on the average temperature value and the preset temperature value, a second temperature compensation value is determined. The method of claim 5, wherein determining the second temperature compensation value based on the average temperature value and the preset temperature value includes: The second temperature compensation value is determined based on the difference between the average temperature value and the preset temperature value and the corresponding second proportional coefficient. The method of claim 6, wherein determining the second temperature compensation value based on the difference between the average temperature value and the preset temperature value and the corresponding second proportional coefficient includes: assuming The average temperature value is T ₂ , the preset temperature value is P, the difference between the average temperature value and the preset temperature value is Y, and the second proportional coefficient is N, then Y, the If P and T ₂ satisfy the following relational expression: Y=PT ₂ , then the second temperature compensation value B satisfies the following relational expression: B=Y*N. The method according to any one of claims 1 to 7, wherein the temperature sensor includes a first temperature sensor provided on the adapter and a second temperature sensor provided on the test seat, and the first temperature sensor The sensor is used to obtain the first temperature data of the reference wafer multiple times, and the second temperature sensor is used to obtain the second temperature data of the reference wafer multiple times; the temperature data based on the reference wafer and the Determining the first temperature compensation value used to adjust the temperature of the bonder and the second temperature compensation value used to adjust the temperature of the test seat with reference to the preset temperature value of the wafer includes: The first temperature compensation value is first determined based on the first temperature data of the reference wafer and the preset temperature value, and then the first temperature compensation value is determined based on the second temperature data of the reference wafer and the preset temperature value. the second temperature compensation value. The method of claim 8, wherein the first temperature compensation value is determined based on the first temperature data of the reference wafer and the preset temperature value, and then the first temperature compensation value is determined based on the first temperature data of the reference wafer. Determining the second temperature compensation value from the two temperature data and the preset temperature value includes: Use the splicer to absorb the reference wafer, use the first temperature sensor to obtain the first temperature data of the reference wafer multiple times, based on the first temperature data of the reference wafer and the preset temperature value, determining the first temperature compensation value; and After using the splicer to place the reference wafer on the test seat, the second temperature sensor is used to obtain the second temperature data of the reference wafer multiple times. Based on the second temperature data of the reference wafer and the The preset temperature value is used to determine the second temperature compensation value. The method according to any one of claims 1 to 7, wherein the temperature sensor includes a first temperature sensor provided on the adapter and a second temperature sensor provided on the test seat, and the first temperature sensor The sensor is used to obtain the first temperature data of the reference wafer multiple times, and the second temperature sensor is used to obtain the second temperature data of the reference wafer multiple times; the temperature data based on the reference wafer and the Referring to the preset temperature value of the wafer, determining the first temperature compensation value used to adjust the temperature of the bonder and the second temperature compensation value used to adjust the temperature of the test seat includes: The first temperature compensation value is determined based on the first temperature data of the reference wafer and the preset temperature value, and the second temperature is determined based on the second temperature data of the reference wafer and the preset temperature value. compensation value. The method according to any one of claims 1 to 7, wherein the temperature sensor includes a first temperature sensor provided on the adapter and a second temperature sensor provided on the test seat, and the first temperature sensor The sensor is used to obtain the first temperature data of the reference wafer multiple times, the second temperature sensor is used to obtain the second temperature data of the reference wafer multiple times, the temperature data based on the reference wafer and the Referring to the preset temperature value of the wafer, determining the first temperature compensation value used to adjust the temperature of the bonder and the second temperature compensation value used to adjust the temperature of the test seat includes: The second temperature compensation value is first determined based on the second temperature data of the reference wafer and the preset temperature value, and then the first temperature compensation value is determined based on the first temperature data of the reference wafer and the preset temperature value. Temperature compensation value.

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