五、發明說明α) 發明領域 本發明係有關於快速升溫备 , 疋w /皿糸統，特別有關於建立快速 升溫糸統溫度穩定性規格，以及莊 Α 度穩定性之方法。 發明背景 Μ及猎以監控快速升溫系統溫 在超大型積體電路的製造中，快速升溫製程（Rapid Thermal Processing，RTP)由於可達到快速升溫的效果， 已逐漸取代咼溫爐管。快速加熱製程的應用範圍極廣，包 含超薄氧化層成長、氮氧化氧層成長，回火 〃 (annealing)、擴散（diffusi〇n)、金屬矽化物（saHcide) 形成、佈植離子（implant)活化與淺接面形成等等。 金屬矽化物的形成，通常是利用快速升溫系統進行兩 階段的回火。以矽化鈷（C〇s卜）的金屬矽化層為例，一般 在矽基板上沈積一層鈷後，利用快速升溫系統將溫度提"升 ^ 50 0 °C，使得鈷與矽進行第一階段中低溫回火，反&應為 高電阻之CoSi，接著將溫度提升到7〇〇艽以上，再進g第 二階段高溫回火，形成高導性的(^〇3丨2，而片電阻降低。 而在生成矽化鈷金屬矽化層的快速升溫製程中，一般 監控中溫區段的方式較為複雜。為了監控中溫區段的溫度 狀況，必須先進行試片的製作。一般先在控片上（m〇n=^ wafer)上生成一熱氧化層（thermal 〇xide)作為緩衝層， 接著於其上沈積一多晶矽（Poly — Si )層。控片經過氫氟酸 蒸氣（HF-vapor )洗淨後，才能錢鍵形成始金屬層，以作為 中溫回火的鈷試片，進行第一階段的快速升溫回火，模擬 530328 五、發明說明（2)----- 產品片的阻值結果。 ^為了確切掌握快速升溫系統的溫度變化，測試溫度通 吊凋1在丨夬速升，里系統的靈敏度（s e n s丨七丨v丨七乂）較強的溫 f ’以。上述鈷試片為例，雖然-般產品片i常的反應溫度 二50 0 C，然而鈷試片的測試溫度卻設於快速升溫系統靈 敏度較大的470 °C左右。 上述快速升溫系統的中温區段的測試方法有兩個主要 的缺點。第一，鈷試片的製作步驟太過繁瑣而複雜。第 鈷試片在470 °C下進行熱回火的阻值變異度相當大， 當試片處理的鈷金屬層的厚度均勻度控制不是非常穩定時 ’則造成銘試片的測試阻值產生很大的變異。因此即使快 速升溫系統的溫度控制正常，仍然有可能因為試片的問 題’產生過高雜訊（noise)而無法確認快速升溫系統是否 穩定正常。 發明簡述 為了解決上述姑试片的問題’本發明的一個目的在於 提供一種建立快速升溫系統之溫度穩定性規格之方法，用 以大幅簡化監測快速升溫系統溫度的流程與提升監測溫度 的方便性。 本發明的另一個目的在藉由快速升溫系統的溫度穩定 性規格的建立’以監控快速升溫系統之溫度穩定度，可以 簡便並快速的確認快速升溫系統的溫度穩定度。 根據本發明的一種建立快速升溫系統之溫度穩定性規 格之方法，係包含下列步驟：先將複數第一晶圓進行一離V. Description of the invention α) Field of the invention The present invention relates to the rapid heating system, the 疋 w / ware system, and in particular to the method for establishing the temperature stability specification of the rapid heating system and the stability of the degree. BACKGROUND OF THE INVENTION In the manufacture of ultra-large integrated circuits, rapid thermal processing (RTP) has been gradually replaced by high temperature heating system temperature monitoring. The rapid heating process has a wide range of applications, including the growth of ultra-thin oxide layers, the growth of nitrogen oxide oxide layers, annealing (diffusion), formation of metal silicide (saHcide), and implantation of ions (implant) Activation and shallow junction formation and so on. Metal silicides are usually formed in a two-stage tempering process using a rapid heating system. Taking the metal silicide layer of cobalt silicide (Cosb) as an example, generally after depositing a layer of cobalt on a silicon substrate, the temperature is raised by using a rapid heating system to raise ^ 50 0 ° C, so that cobalt and silicon undergo the first stage Tempering at low and medium temperatures, the reverse & should be high resistance CoSi, then raise the temperature to above 700 艽, and then enter the second stage of high temperature tempering to form a highly conductive (^ 〇3 丨 2, and The resistance is reduced. In the rapid heating process of generating the cobalt silicide layer, the method of generally monitoring the middle temperature section is more complicated. In order to monitor the temperature condition of the middle temperature section, a test piece must be produced first. Generally, the control is first controlled. A thermal oxide layer (a thermal oxide layer) is formed on the wafer (m〇n = ^ wafer) as a buffer layer, and then a poly-Si layer is deposited thereon. The wafer is subjected to hydrofluoric acid vapor (HF-vapor). After washing, the key metal layer can be formed to serve as the medium temperature tempered cobalt test piece, and the first stage of rapid heating and tempering is simulated to simulate 530328 V. Description of the invention (2) ----- Resistance results. ^ In order to accurately grasp the temperature change of the rapid heating system The test temperature rises quickly in the temperature range, and the sensitivity of the system (sens 丨 七 丨 v 丨 七 乂) is stronger than the temperature f '. The above cobalt test strip is taken as an example, although- The reaction temperature is 250 ° C. However, the test temperature of the cobalt test strip is set at about 470 ° C, which is the sensitivity of the rapid heating system. There are two main disadvantages to the test method of the middle temperature section of the above rapid heating system. First, The manufacturing steps of cobalt test strips are too tedious and complicated. The resistance variation of the cobalt test strip at 470 ° C is quite large. When the thickness uniformity control of the cobalt metal layer processed by the test strip is not very stable 'It will cause a great variation in the test resistance of the Ming test strip. Therefore, even if the temperature control of the rapid heating system is normal, there may still be a problem with the test strip.' There is too much noise to confirm whether the rapid heating system is Stable and normal. Brief description of the invention In order to solve the problem of the above-mentioned test piece, an object of the present invention is to provide a method for establishing a temperature stability specification of a rapid heating system to greatly simplify monitoring. The process of heating system temperature and the convenience of improving the monitoring temperature. Another object of the present invention is to monitor the temperature stability of the rapid heating system by establishing the temperature stability specification of the rapid heating system. Temperature stability of the heating system. A method for establishing a temperature stability specification of a rapid heating system according to the present invention includes the following steps: firstly separating a plurality of first wafers
^3〇328 五、發明說明（3) 子植入；測量該 將該等第一晶圓 度下進行回火； 建立該等第一晶 火溫度之一相關 既定之溫度區間 溫系統之溫度穩 而根據上述 規袼之方法，可 列步驟：以一第 圓於離子植入後 /益糸統中進行回 ’以得到該第二 該第二晶圓之該 的偏差值，藉以 在上述方法 化物層。晶圓的 離子植入檢測儀 Wave值。而晶圓 較佳情況中，既 土 3 0 °c 。而利用 性，可用以在溫 之特性值差值區 值。 等第一晶圓於離子植入後之第一特性值； ，该快速升溫系統中之複數個既定回火溫 ，測該等第一晶圓回火後之第二特性值； 圓之第一與第二特性值差值與其對應之回 性；以及以該相關性建立一快速升溫製程 所對應的特性值差值區間，作為該快速升 定性規格。 ^發明之建立快速升溫系統之溫度穩定性 監控快速升溫系統之溫度穩定度，包含下 二晶圓重複進行離子植入後，測量第二晶 之第一特性值；將該第二晶圓在該快速升 火；量測該第二晶圓回火後之第二特性值 晶圓的一第一與第二特性差值；以及評估 第一與第二特性差值與該特性值差值區間 監控該快速升溫製程之溫度穩定性。 中’該等晶圓在離子植入前可先形成一氧 第 與弟一特性值可以利用Thermal Wave 器量測晶圓在進行回火前後的Thermal 的離子植入可利用中電流植入磷離子。在 定回火溫度可介於4〇〇 — 6〇〇間，如：500 °C 特定值差值所建立的與回火溫度間的相關 度區間5 0 0 °C ± 1 〇 的區間中，建立對應 間的上下限值與一介於上下限值間的理想^ 3〇328 V. Description of the invention (3) Sub-implantation; Measure the tempering at the first wafer level; Establish one of the first crystallizing temperatures related to the temperature stability of the predetermined temperature interval temperature system According to the method described above, the steps can be listed as follows: a first round is performed in the post-ion implantation / benefit system to obtain the deviation value of the second and second wafers, so as to form the above method. Floor. Wave value of wafer ion implantation detector. In the preferred case, the wafer is 30 ° c. And the availability can be used in the temperature difference between the characteristic values. Wait for the first characteristic value of the first wafer after ion implantation; Measure the second characteristic value of the first wafer after tempering in the rapid heating system; round the first Responsiveness corresponding to the second characteristic value difference; and using the correlation to establish a characteristic value difference interval corresponding to a rapid temperature rise process as the rapid ascending qualitative specification. ^ Invention of establishing temperature stability monitoring of the rapid heating system The temperature stability of the rapid heating system includes the following two wafers after repeated ion implantation, measuring the first characteristic value of the second crystal; Rapid fire; measuring the second characteristic value of the second wafer after the tempering of the first and second characteristic differences of the wafer; and monitoring the interval between the first and second characteristic differences and the characteristic value difference monitoring Temperature stability of the rapid temperature rise process. Medium 'These wafers can form first oxygen first and second characteristic values before ion implantation. The Thermal Wave device can be used to measure the thermal ion implantation of the wafer before and after tempering. Phosphorus ions can be implanted using a medium current. . The fixed tempering temperature can be between 400-600, such as the correlation range between 500 ° C and the tempering temperature established by a specific value difference of 500 ° C. Establish correspondence between the upper and lower limits and an ideal between the upper and lower limits
0503-7152TW(N) ； TSMC2001-0802 ； Peggy.ptd 第8頁 530328 五、發明說明（4) 實施例 接者參見弟1圖’詳細說明根據本發明之一實施例之 一種建立快速升溫系統之溫度穩定性規格之方法流程。以 快速升溫系統的中溫（ 400-60 0 °C)監控為例，根據快速升 溫的製程之要求，如進行金屬矽化物第一階段退火，其製 私/JHL度要求介於一既定區間範圍中。為了確認快速升溫系 統的溫度正確’因此本發明係利用離子植入後以快速升溫 系統進行回火，利用回火前後的離子植入特性值的變化， 以對應快速升溫系統的溫度監控。 首先進行步驟102 :複數第一晶圓進行一離子植入。 在較佳情況中’晶圓上可先形成一氧化層（〇xide)，以防 止通道效應（channel ing effect)，接續進行中電流的磷 離子（P31)植入。 接著進行步驟1 04 :測量第一晶圓於離子植入後之第 一特性值。離子植入後的特性分佈，可以藉由 Therma-Wave公司的Thermal -Wave離子植入曰檢測工且以量 測晶圓的TW值。 ’、 以Thermal-Wave離子植入檢測工具量測得晶圓離子植 入後的tw前值之後，接著進行步驟1〇6 :將第一晶圓在快 速升溫系統中之複數個既定回火溫度下進行回火。在/較 佳實施例中，在47(TC、50(rc、53代中，各以3片鱗離子 (PS1)植入之第一晶圓進行快速加溫後回火3〇秒。 接著進行步驟108 :量測第一晶圓回火後之第二特性 值。當第一晶圓回火後，可消除因離子植入所造成之晶格0503-7152TW (N); TSMC2001-0802; Peggy.ptd Page 8 530328 V. Description of the invention (4) Example of the embodiment Refer to Figure 1 for detailed description of a method for establishing a rapid heating system according to an embodiment of the invention Method of temperature stability specification. Taking the monitoring of the medium temperature (400-60 0 ° C) of the rapid temperature rise system as an example, according to the requirements of the rapid temperature rise process, if the first stage annealing of the metal silicide is performed, the private / JHL degree requirement is within a predetermined range. in. In order to confirm that the temperature of the rapid heating system is correct, the present invention uses the rapid heating system after ion implantation for tempering, and uses the change of the ion implantation characteristic value before and after tempering to correspond to the temperature monitoring of the rapid heating system. First, step 102 is performed: performing ion implantation on a plurality of first wafers. In a preferred case, an oxide layer (Oxide) may be formed on the wafer first to prevent the channeling effect, and then the P31 implantation of current is continued. Then proceed to step 104: measuring the first characteristic value of the first wafer after the ion implantation. The characteristic distribution after ion implantation can be measured by the Thermal-Wave ion implantation company of Therma-Wave Company and the TW value of the wafer can be measured. '. After measuring the pre-tw value of the wafer after ion implantation with the Thermal-Wave ion implantation detection tool, proceed to step 106: the plurality of predetermined tempering temperatures of the first wafer in the rapid heating system. Tempering. In a preferred embodiment, the first wafers implanted with 3 scale ions (PS1) in the 47 (TC, 50 (rc, and 53 generations) are each rapidly heated and then tempered for 30 seconds. The next step is 108: Measure the second characteristic value of the first wafer after tempering. When the first wafer is tempered, the lattice caused by ion implantation can be eliminated.
0503-7152TWF(N) ； TSMC2001O802 ； Peggy.ptd 第9頁 530328 五、發明說明（5) °'褒’並且達到穩疋的電性。此時再藉由T h e r m a 1 - W a v e離 子植入檢測工具量測得第一晶圓回火後的TW後值。而上述 ，片在不同溫度下進行回火的第一晶圓，其第一與第二特 性值與特性值差值如下列第一表所示。 第一表 酬 溫度(°c) Π刖値 Ί1後値 W差値 1 470 711.7 358.76 352.94 2 470 713 360.12 352.88 3 470 717 365.2 351.8 4 500 714 334.4 376.6 5 500 714 334.2 376.8 6 500 717.1 338.5 378.6 7 530 713.9 308.6 405.3 8 530 714 309.7 405.3 9 530 715.8 1 311.5 404.3 —曰由第一表中可以看出，9片經磷離子中電流植入之第 曰曰圓，在三種溫度下回火30秒，各溫度下的三 接近二顯驗rmal-Wave針對離子植入晶圓的特性 /則里的穩定度向，具有良好的再現性。 接著進行步驟11 0 :建立第一晶圓之第一與第二特座 =值與其對2之回火溫度之一相關性。“的9 片弟一晶圓與其對應的回火溫度建立一相關性，直結 第2圖所示。#第2圖可以看出，第一晶圓的”特：；： 回火溫度之間的線性關係佳，其線性相關方程气為 、 5303280503-7152TWF (N); TSMC2001O802; Peggy.ptd page 9 530328 5. Description of the invention (5) ° '褒' and achieve stable electrical properties. At this time, the value of the post-TW after the tempering of the first wafer is measured by the T h e r m a 1-Wa ve ion implantation detection tool. For the first wafer tempered at different temperatures, the difference between the first and second characteristic values and the characteristic values is shown in the first table below. First table temperature (° c) Π 刖 値 Ί 1 値 値 W 値 1 470 711.7 358.76 352.94 2 470 713 360.12 352.88 3 470 717 365.2 351.8 4 500 714 334.4 376.6 5 500 714 334.2 376.8 6 500 717.1 338.5 378.6 7 530 713.9 308.6 405.3 8 530 714 309.7 405.3 9 530 715.8 1 311.5 404.3 — As can be seen from the first table, 9 tablets were implanted with the first circle of phosphorus ion current, tempered at three temperatures for 30 seconds, each The three-close-to-two display test at temperature, rmal-Wave, has good reproducibility for the characteristics / stability of ion implantation wafers. Then proceed to step 110: establishing a correlation between the first and second pedestal = values of the first wafer and the tempering temperature of the pair. "The 9 siblings and one wafer establish a correlation with their corresponding tempering temperatures, as shown in Figure 2. #Picture 2 can be seen that the first wafer" special :; between the tempering temperature Good linear relationship, the linear correlation equation is 530328
Ρ〇·8682χ-55·276，其R2值為〇·9992，顯示回火溫度與^ 特性差值的相關度高。 因此可繼續步驟丨丨2 :以該相關性建立一快速升溫製 程既定之溫度區間所對應的特性值差值區間，作為該快~速 :，系統之溫度穩定性規格。當一快速升溫製程的所要求 口口 f ✓皿度區間為5 〇 〇 〇c ± 5 〇C時，則將4 9 5、5 0 0與5 0 5 〇C帶 入該線性相關式中，建立UTW特性值差值監控的規格為上 限（UCL) 383.8、理想值 379.5 與下限（LCL) 357.3。 參見第3圖’所示為根據上述實施例之數據所建立， 以TW特性值差值作為快速加熱製程溫度穩定性的 格。圖中所示為以_ 作為線上生產監控區^而 以5 0 0 C ± 7 °C做為產品的品管規格區間。亦即在一 5 〇 〇。〇 的快速升溫製程中，線上生產的溫度穩定性應介於5〇()它 ± 5 C，而其對應的TW特性值差值監控的規格為上限（ucl) 3^83.8、理想值3 79·5與下限（LCL) 3 57 3。而產品規格所容 許的溫度變化為500 °C ± 7 °C，其對應的TW特性值差值於枰 的規格上下限為（USL)388e0與（LSL)371〇。當離子植^二 片的特性值差值偏離規格表中的上下限時，則表示快速升 ✓J1L糸統的溫度出現問題，必須加以調整。 、 當特性差值規格與回火溫度間的關係建立後，可 步驟114 :將一第二晶圓重複進行步驟1〇2至丨“，以 該第二晶圓的一第一與第二特性差值。測試用的第二曰 圓’同樣經過與第-晶圓相同條件的離子植入後，在 的回火溫度前後量測其TW前後值，而其差值則代表目前快Po · 8682χ-55 · 276, the R2 value of which is 0.9992, showing that the correlation between the tempering temperature and the difference in ^ characteristics is high. Therefore, it is possible to proceed to step 丨 2: Use this correlation to establish a characteristic value difference interval corresponding to a predetermined temperature interval of the rapid heating process, as the fast-to-fast :, system temperature stability specification. When the required mouth f of a rapid temperature rise process is in the range of 500 ° C ± 5 ° C, then 495, 500, and 5500 ° C are brought into the linear correlation, The specifications for establishing UTW characteristic value difference monitoring are upper limit (UCL) 383.8, ideal value 379.5 and lower limit (LCL) 357.3. Referring to Fig. 3 ', it is established based on the data of the above embodiment, and the difference in TW characteristic value is used as the grid for the temperature stability of the rapid heating process. The figure shows the quality control range of the product with _ as the online production monitoring area ^ and 500 C ± 7 ° C. That is at 500. In the rapid heating-up process of 〇, the temperature stability of on-line production should be between 50 ℃ and ± 5 C, and the corresponding TW characteristic value difference monitoring specifications are upper limit (ucl) 3 ^ 83.8, ideal value 3 79 5 and lower limit (LCL) 3 57 3. The permissible temperature change of the product specification is 500 ° C ± 7 ° C, and the corresponding upper and lower limits of the difference in TW characteristic values between 枰 are (USL) 388e0 and (LSL) 371 °. When the difference between the characteristic values of the ion implanted two tablets deviates from the upper and lower limits in the specification table, it means a rapid rise ✓ The temperature of the J1L system has a problem and must be adjusted. When the relationship between the characteristic difference specification and the tempering temperature is established, step 114 may be repeated: repeating steps 102 to 丨 "for a second wafer to use the first and second characteristics of the second wafer The difference is that the second circle of the circle used for the test was also subjected to ion implantation under the same conditions as the first wafer, and the values of the TW before and after the tempering temperature were measured, and the difference represents the current speed.
530328 五、發明說明（7) 速升溫系統的溫度控制狀況。 穩定性 溫系統 穩定性 離子植 段的穩 速升溫 繁瑣的 雖 定本發 和範圍 圍當視 不佳的 的溫度 高，操 入方式 定性。 系統的 步驟， 然本發 明，任 内，當 後附之 姑試片 監控試 作方便 ，可以 再者， 溫度， 可降低 明以較 何熟悉 可做些 申請專 而藉由上述所得之第二晶圓的特性值差值，可進行步 驟11 6 :評估第二晶圓的第一與第二特性差值與該特性值 差值區間的偏差。評估第二晶圓的特性值差值在特性值差 值區間内的落點，可得知溫度控制是否落於品管要求的區 間中，可以得知快速升溫系統的溫度穩定性。 因此，藉由本發明，完全取代製作步驟繁複且對溫度 片。而檢 ，且試片 快速測試 利用離子 更可節省 檢控溫度 佳實施例 此項技藝 許更動與 利範圍所 測離子植 的再現性 快速升溫 植入的特 製作鈷試 所耗費的 揭露如上 者，在不 潤飾，因 界定者為 曰曰圓的 入的特性 良好。另 系統的多 性值變化 片的南昂 成本。 ’然其並 脫離本發 此本發明 準。 的方式， 外，藉由 個溫度區 來監控快 成本以及 非用以限 明之精神 之保護範530328 V. Description of the invention (7) Temperature control status of the rapid heating system. Stability Temperature system stability Stability of the ion implantation section, rapid temperature increase, tedious. Although the temperature and the range of the hair are poor, the operating temperature is qualitative. The steps of the system, of the present invention, however, the attached test strip is easy to monitor and test during the period. In addition, the temperature can be lowered, and the second wafer obtained by the above can be applied for the application. The characteristic value difference can be performed in step 11 6: evaluating the deviation between the first and second characteristic difference values of the second wafer and the characteristic value difference interval. By evaluating the drop point of the difference in the characteristic value of the second wafer within the characteristic value difference range, it can be known whether the temperature control falls within the required range of the quality control, and the temperature stability of the rapid temperature rise system can be obtained. Therefore, the present invention completely replaces the complicated and complicated manufacturing steps for the temperature tablet. The test, and the rapid test of the test strip can use ions to save the temperature of the prosecution. This embodiment of the technology allows the reproducibility of the measured ion implantation to rapidly increase the temperature of the implant. It does not polish, because the definer is good for entering. Another system's polymorphic value changes the cost of Nanang. However, it does not depart from the present invention. In addition, the use of temperature zones to monitor fast costs and non-limiting spirit of protection
530328 圖式簡單說明 為了讓本發明之μ n Μ > ατ 上述目的、特徵、及優點能更明顯易 ί董以下配合所附圖 <，作詳細說明如下： 升Λ所Λ為根據本發明之一實施例之一種建立快速 度穩定性規格’以及藉以監控快速升溫系統 之/孤度穩疋性之方法流程。 枯伽第t圖所不根據本發明之一實施例之晶圓TW特性值差 值/、回火溫度之間的線性關係。 第3圖所不為根據本發明之一實施例中，以TW特性值 差值作為快速加熱製程溫度穩定性的監控規格 符號說明 1 0 2〜11 6〜步驟流程。530328 The diagram briefly illustrates that in order to make the μ n Μ > ατ of the present invention more obvious, the following objectives, features, and advantages can be easily understood. The following is described in detail with the accompanying drawings < One embodiment is a method and flow for establishing a fastness stability specification 'and a method for monitoring the fastness / solarity stability of a rapid heating system. There is a linear relationship between the difference between the TW characteristic value of the wafer / tempering temperature and the tempering temperature according to one embodiment of the kamma diagram t. Fig. 3 is not an embodiment according to the present invention, and the difference between the TW characteristic value is used as the monitoring specification for the temperature stability of the rapid heating process. Symbol Description 1 0 2 to 11 6 to step flow.
0503-7152TWF(N) ； TSMC2001-0802 ； Peggy.ptd 第13頁0503-7152TWF (N); TSMC2001-0802; Peggy.ptd page 13