CN106128935A - A kind of method improving nickel annealing machine bench wafer homogeneity - Google Patents
A kind of method improving nickel annealing machine bench wafer homogeneity Download PDFInfo
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- CN106128935A CN106128935A CN201610510479.2A CN201610510479A CN106128935A CN 106128935 A CN106128935 A CN 106128935A CN 201610510479 A CN201610510479 A CN 201610510479A CN 106128935 A CN106128935 A CN 106128935A
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- machine bench
- annealing machine
- annealing
- nickel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02697—Forming conducting materials on a substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
The invention provides a kind of method improving nickel annealing machine bench wafer homogeneity, including: first step: at silicon chip surface growth nickel metal deposit to manufacture nickel metal control wafer；Second step: carried out annealing for the first time to nickel metal control wafer by annealing machine bench to be monitored；Third step: measure the resistance value after the annealing for the first time of nickel metal control wafer to check the degree of transformation of nickel metal control wafer；4th step: obtain value of feedback according to the degree of transformation that described resistance value verifies, and use described value of feedback to optimize the tool parameters of annealing machine bench；5th step: after optimizing the tool parameters of annealing machine bench, is carried out second time by annealing machine bench to be monitored to nickel metal control wafer and anneals, to obtain final metal silicide.
Description
Technical field
The present invention relates to field of semiconductor manufacture, it is more particularly related to one improves nickel annealing machine bench wafer
The method of homogeneity.
Background technology
Nickel annealing process is conventional semiconductor process technique, applies quite varied.The purpose of nickel annealing process is to utilize
Heat energy promotes the nickel metal reaction of silicon and front layer deposition, generates the metal silicide that resistance is lower.Wherein, as the gold of product
The quality belonging to silicide is the most relevant to temperature.
In nickel makes technical process, first, the heat that the zones of different of wafer annealing homogeneity and board chamber gives
Difference has much relations；Secondly, wafer annealing homogeneity also suffers from the impact of front layer metal film deposition homogeneity.
In the prior art, the process for metal silicide phase transformation lacks effective monitoring, it is impossible to control board in time long
The fluctuation of phase heating efficiency.Therefore, making technique for nickel, the more actually active temperature monitoring method of one seems the heaviest
Want.
Summary of the invention
The technical problem to be solved is for there is drawbacks described above in prior art, it is provided that one can be improved
The method of nickel annealing machine bench wafer homogeneity.
In order to realize above-mentioned technical purpose, according to the present invention, it is provided that a kind of nickel annealing machine bench wafer homogeneity improved
Method, including:
First step: at silicon chip surface growth nickel metal deposit to manufacture nickel metal control wafer；
Second step: carried out annealing for the first time to nickel metal control wafer by annealing machine bench to be monitored；
Third step: measure the resistance value after the annealing for the first time of nickel metal control wafer to check the phase range of nickel metal control wafer
Degree；
4th step: the degree of transformation verified according to described resistance value obtains value of feedback, and uses described value of feedback
Optimize the tool parameters of annealing machine bench；
5th step: after optimizing the tool parameters of annealing machine bench, by annealing machine bench to be monitored to nickel metal control wafer
Carry out second time to anneal, to obtain final metal silicide.
Preferably, in the first step, physical vapour deposition (PVD) board is utilized to grow nickel metal deposit at silicon chip surface.
Preferably, in the first step, the native oxide of silicon chip surface is first removed, then at silicon chip surface growth nickel gold
Belong to layer.
Preferably, in the second step, nickel metal deposit produces phase transformation with silicon in reaction.
Preferably, in the second step, within the waiting time set, by annealing machine bench to be monitored to nickel metal control wafer
Carry out annealing for the first time.
Preferably, in the second step, nickel metal control wafer is carried out moving back for the first time at 300 DEG C by annealing machine bench to be monitored
Fire.
Preferably, annealing machine bench is fast bench heat treater.
Preferably, in the 4th step, optimize the tool parameters of annealing machine bench for optimizing the board temperature of annealing machine bench
Compensate.
Preferably, described metal silicide is NiSi.
The present invention mainly checks its degree of transformation by the resistance value after measuring the annealing of nickel metal deposit control wafer, thus real
Now the purpose of the heating uniformity of monitoring annealing machine bench, thus improves metal deposit homogeneous with what wafer during pasc reaction was heated
Property, and reduce the excess diffusion problem of nickel, reduce the defect problem such as leakage current and follow-up spike.
Accompanying drawing explanation
In conjunction with accompanying drawing, and by with reference to detailed description below, it will more easily the present invention is had more complete understanding
And its adjoint advantage and feature is more easily understood, wherein:
Fig. 1 schematically shows the method improving nickel annealing machine bench wafer homogeneity according to the preferred embodiment of the invention
Flow chart.
It should be noted that accompanying drawing is used for illustrating the present invention, and the unrestricted present invention.Note, represent that the accompanying drawing of structure can
Can be not necessarily drawn to scale.Further, in accompanying drawing, same or like element indicates same or like label.
Detailed description of the invention
In order to make present disclosure more clear and understandable, below in conjunction with specific embodiments and the drawings in the present invention
Appearance is described in detail.
In view of the problems referred to above mentioned in background technology, the present invention proposes the control wafer using deposit nickel metal, in nickel heat
Anneal on technique board, grasp the effective of nickel thermal process board temperature control in real time by the resistance feedback measuring annealing wafer
Property.
Specifically, the present invention mainly checks its phase range by the resistance value after measuring the annealing of nickel metal deposit control wafer
Degree, thus realize monitoring the purpose of the heating uniformity of annealing machine bench, thus improve metal deposit and be subject to wafer during pasc reaction
The homogeneity of heat, and reduce the excess diffusion problem of nickel, reduce the defect problem such as leakage current and follow-up spike.
Will be detailed below the preferred embodiments of the present invention.
Fig. 1 schematically shows the method improving nickel annealing machine bench wafer homogeneity according to the preferred embodiment of the invention
Flow chart.
Specifically, as it is shown in figure 1, the method improving nickel annealing machine bench wafer homogeneity according to the preferred embodiment of the invention
Including:
First step S1: at silicon chip surface growth nickel metal deposit to manufacture nickel metal control wafer；
Preferably, in first step S1, utilize PVD (Physical Vapor Deposition, physical vapour deposition (PVD))
Board grows nickel metal deposit at silicon chip surface.
Preferably, in first step S1, first remove the native oxide of silicon chip surface, then grow nickel at silicon chip surface
Metal level.
Second step S2: carried out annealing for the first time to nickel metal control wafer by annealing machine bench to be monitored；
In second step S2, nickel metal deposit produces phase transformation (being partly formed metal silicide) with silicon in reaction,
Make the phase-change product resistance rapid drawdown that reaction obtains.
Preferably, in second step S2, within the waiting time (Q-time, queue time) set, by be monitored
Annealing machine bench carry out nickel metal control wafer annealing for the first time.
For instance, it is preferred that in second step S2, nickel metal control wafer is carried out at 300 DEG C by annealing machine bench to be monitored
Annealing for the first time.
Such as, annealing machine bench is fast bench heat treater.
Third step S3: measure the resistance value after the annealing for the first time of nickel metal control wafer to check the phase range of nickel metal control wafer
Degree；
4th step S4: obtain value of feedback according to the degree of transformation that described resistance value verifies, and use described value of feedback
Optimize the tool parameters of annealing machine bench；
Preferably, in the fourth step s 4, the tool parameters of annealing machine bench is optimized for optimizing the board temperature of annealing machine bench
Degree compensates.
5th step S5: after optimizing the tool parameters of annealing machine bench, by annealing machine bench to be monitored to nickel metal control
Sheet carries out second time and anneals, to obtain final metal silicide.
Specifically, described metal silicide is NiSi.
The present invention measures the resistance value of phase-change product, and draws annealing machine bench (such as, rapid thermal treatment from data feedback
Board) ability that heats and uniformity, and optimize tool parameters according to this, give temperature in time according to the sensitivity of wafer reaction temperature
Degree compensates, and reaches to improve the homogeneity of annealing machine bench wafer.The method has ageing and reliability.
The present invention combines front layer process characteristic, uses metal silicide wafer to monitor the heating efficiency of nickel annealing machine bench in real time
The reasonability set with temperature, gives temperature-compensating in time according to the sensitivity of wafer reaction temperature, reaches to promote wafer homogeneous
Property, reduce defective workmanship, improve the purpose of product yield.
Furthermore, it is necessary to explanation, unless stated otherwise or point out, otherwise the term in description " first ", " the
Two ", " the 3rd " etc. describe be used only for distinguishing in description each assembly, element, step etc. rather than for representing each
Logical relation between assembly, element, step or ordering relation etc..
Although it is understood that the present invention discloses as above with preferred embodiment, but above-described embodiment being not used to
Limit the present invention.For any those of ordinary skill in the art, without departing under technical solution of the present invention ambit,
Technical solution of the present invention is made many possible variations and modification by the technology contents that all may utilize the disclosure above, or is revised as
Equivalent embodiments with change.Therefore, every content without departing from technical solution of the present invention, according to the technical spirit pair of the present invention
Any simple modification made for any of the above embodiments, equivalent variations and modification, all still fall within the scope of technical solution of the present invention protection
In.
Claims (9)
1. the method improving nickel annealing machine bench wafer homogeneity, it is characterised in that including:
First step: at silicon chip surface growth nickel metal deposit to manufacture nickel metal control wafer；
Second step: carried out annealing for the first time to nickel metal control wafer by annealing machine bench to be monitored；
Third step: measure the resistance value after the annealing for the first time of nickel metal control wafer to check the degree of transformation of nickel metal control wafer；
4th step: obtain value of feedback according to the degree of transformation that described resistance value verifies, and use described value of feedback to optimize
The tool parameters of annealing machine bench；
5th step: after optimizing the tool parameters of annealing machine bench, annealing machine bench to be monitored nickel metal control wafer is carried out
Second time annealing, to obtain final metal silicide.
The method improving nickel annealing machine bench wafer homogeneity the most according to claim 1, it is characterised in that at first step
In, utilize physical vapour deposition (PVD) board to grow nickel metal deposit at silicon chip surface.
The method improving nickel annealing machine bench wafer homogeneity the most according to claim 1 and 2, it is characterised in that first
In step, first remove the native oxide of silicon chip surface, then grow nickel metal layer at silicon chip surface.
The method improving nickel annealing machine bench wafer homogeneity the most according to claim 1 and 2, it is characterised in that second
In step, nickel metal deposit produces phase transformation with silicon in reaction.
The method improving nickel annealing machine bench wafer homogeneity the most according to claim 1 and 2, it is characterised in that second
In step, within the waiting time set, annealing machine bench to be monitored carry out annealing for the first time to nickel metal control wafer.
The method improving nickel annealing machine bench wafer homogeneity the most according to claim 1 and 2, it is characterised in that second
In step, nickel metal control wafer is carried out annealing for the first time at 300 DEG C by annealing machine bench to be monitored.
The method improving nickel annealing machine bench wafer homogeneity the most according to claim 1 and 2, it is characterised in that annealing machine
Platform is fast bench heat treater.
The method improving nickel annealing machine bench wafer homogeneity the most according to claim 1 and 2, it is characterised in that the 4th
In step, optimize the tool parameters of annealing machine bench for optimizing the board temperature-compensating of annealing machine bench.
The method improving nickel annealing machine bench wafer homogeneity the most according to claim 1 and 2, it is characterised in that described gold
Belonging to silicide is NiSi.
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| CN201610510479.2A CN106128935A (en) | 2016-06-30 | 2016-06-30 | A kind of method improving nickel annealing machine bench wafer homogeneity |
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| CN201610510479.2A CN106128935A (en) | 2016-06-30 | 2016-06-30 | A kind of method improving nickel annealing machine bench wafer homogeneity |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110310900A (en) * | 2019-07-22 | 2019-10-08 | 上海华力集成电路制造有限公司 | Nickel metal silicide generates monitoring method |
| CN117410215A (en) * | 2023-12-15 | 2024-01-16 | 合肥晶合集成电路股份有限公司 | Method for determining machine parameters, control method, control system and device thereof |
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| JPH07294569A (en) * | 1994-04-22 | 1995-11-10 | Nkk Corp | Apparatus and method for heat treatment |
| US20020191668A1 (en) * | 2001-05-31 | 2002-12-19 | Zhong-Yun Zhu | Using refractory metal silicidation phase transition temperature points to control and/or calibrate rtp low temperature operation |
| CN103165485A (en) * | 2011-12-08 | 2013-06-19 | 中芯国际集成电路制造(上海)有限公司 | Monitoring method of millisecond annealing process stability |
-
2016
- 2016-06-30 CN CN201610510479.2A patent/CN106128935A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07294569A (en) * | 1994-04-22 | 1995-11-10 | Nkk Corp | Apparatus and method for heat treatment |
| US20020191668A1 (en) * | 2001-05-31 | 2002-12-19 | Zhong-Yun Zhu | Using refractory metal silicidation phase transition temperature points to control and/or calibrate rtp low temperature operation |
| CN103165485A (en) * | 2011-12-08 | 2013-06-19 | 中芯国际集成电路制造(上海)有限公司 | Monitoring method of millisecond annealing process stability |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110310900A (en) * | 2019-07-22 | 2019-10-08 | 上海华力集成电路制造有限公司 | Nickel metal silicide generates monitoring method |
| CN110310900B (en) * | 2019-07-22 | 2021-12-07 | 上海华力集成电路制造有限公司 | Nickel metal silicide generation monitoring method |
| CN117410215A (en) * | 2023-12-15 | 2024-01-16 | 合肥晶合集成电路股份有限公司 | Method for determining machine parameters, control method, control system and device thereof |
| CN117410215B (en) * | 2023-12-15 | 2024-04-09 | 合肥晶合集成电路股份有限公司 | Method for determining machine parameters, control method, control system and device thereof |
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Application publication date: 20161116 |