CN107204290A - A kind of school temperature method of LED wafer quick anneal oven - Google Patents
A kind of school temperature method of LED wafer quick anneal oven Download PDFInfo
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- CN107204290A CN107204290A CN201710220395.XA CN201710220395A CN107204290A CN 107204290 A CN107204290 A CN 107204290A CN 201710220395 A CN201710220395 A CN 201710220395A CN 107204290 A CN107204290 A CN 107204290A
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- wafer
- led wafer
- thermocouples
- anneal oven
- quick anneal
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
Abstract
A kind of school temperature method of LED wafer quick anneal oven, belong to the production technical field of semi-conducting material, present invention calibration of the longitudinal thermal field of increase in addition after the calibration of horizontal thermal field, to ensure that LED wafer is basically identical in short annealing process midplane and warped surface temperature, to ensure the effect of annealing, solve well because warpage causes the problem of thermal field is inconsistent, LED wafer can be formed good Ohmic contact in plane and warped surface, so as to improve the short annealing qualification rate of LED wafer, particularly 4 cun and above LED wafer.
Description
Technical field
The invention belongs to the production technical field of semi-conducting material, more particularly to LED wafer rta technique.
Background technology
LED wafer short annealing refers in a short time, the wafer of processing to be annealed is increased to after required temperature, entered
Row annealing, to reach the purpose of lattice defect annealing, crystal regeneration and activation and the diffusion of ion implantation doping atom.
In the application of ion implanting, rapid temperature rise and drop heat treatment processing procedure can activate the foreign atom of injection, because its heating rate is fast
And the time of heat treatment is short, junction depth and effective channel length can be effectively reduced, rapid temperature rise and drop is heat-treated in semiconductor skill
It is more and more important in art.
LED wafer short annealing is to form good by thermal diffusion between the electrode material and wafer material that LED wafer is deposited
Good Ohmic contact, to reduce LED positive operating voltage.
LED wafer quick anneal oven is using warm wall type water circulation framework, using halogen lamp tube as heating source, heat by it is upper,
Under, the halogen lamp tube of side wall be delivered in stove on positive way graphite wafer-supporting platform, can be fast because graphite has a preferable conductive performance
Speed absorbs heat and raises own temperature, and high temperature is passed to the LED wafer being placed on it, and LED wafer, which absorbs, comes from halogen
Plain fluorescent tube direct irradiation and graphite wafer-supporting platform two parts heat, coordinate 10~15 groups of temperature-controlled zones and 2 groups of thermocouples to carry out
Actual temperature in stove is monitored and compared, pending chip is placed in quartz chamber body, quick anneal oven heating rate is about
40~50 DEG C/S, with 5~10sccm N in annealing process2It is protected by, annealing time is 10~60 seconds, treatment temperature is
Between 400~550 DEG C, to reach the effect being rapidly heated.
It is known that the temperature homogeneity in annealing furnace cavity has a major impact to the annealing effect of wafer, and due to halogen
Fluorescent tube can be reduced with the increase heating efficiency of use time, needed to carry out the PID amendments of temperature control in some cycles and calibrated,
Current school temperature mode is that the horizontal thermal field on wafer wafer-supporting platform is measured using 8 thermocouple temperature measurers, is stuck up when LED wafer does not have
Qu Shi, can meet the requirement of temperature homogeneity, but when wafer size increases to 4 cun and the above, because wafer area is larger
Warpage occurs, this is due to that the integrated temperature occurred laterally and longitudinally staggeredly larger difference occurs, is now needed a kind of new
School temperature method could ensure the uniform of crystal column surface thermal field.
The content of the invention
To solve the above problems, the invention provides a kind of suitable quick anneal oven school for processing 4 cun and above LED wafer
Warm method.
Technical solution of the present invention comprises the following steps：
1）Eight thermocouples are placed on the square graphite wafer-supporting platform of quick anneal oven, eight thermocouples are divided to two groups of cloth
Put, four thermocouples of every group four, first group are arranged in 4 angles of wafer-supporting platform, second group of four thermocouples difference
The center of wafer-supporting platform is arranged in, and eight thermocouples are in same level；
2）By the pid value for adjusting the heating source of diverse location in quick anneal oven so that any the two of eight thermocouple sensings
Deviation between individual temperature is less than ± 5 DEG C；
3）First group of four thermocouples difference is padded at away from graphite wafer-supporting platform 2.5mm, then by adjusting quick anneal oven
The pid value of the heating source of interior diverse location so that the deviation between any two temperature of eight thermocouple sensings is less than ± 5
℃。
Step 2）Calibrated to hold the horizontal thermal field above piece to graphite in quick anneal oven；And step 3）It is then to fast
Longitudinal thermal field that graphite is held above piece in fast annealing stove is calibrated.
Present invention calibration of the longitudinal thermal field of increase in addition after the calibration of horizontal thermal field, to ensure LED wafer in short annealing
Process midplane and warped surface temperature are basically identical, to ensure the effect of annealing, solve well because warpage causes thermal field not
Consistent the problem of, LED wafer can be formed good Ohmic contact in plane and warped surface, so as to improve LED wafer, especially
It is the short annealing qualification rate of 4 cun and above LED wafer.
Further, in order to ensure the accuracy of measurement, the temperature field around outer ring, of the present invention first can be measured
Adjacent center spacing is 1100mm in four thermocouples of group.
Similarly, adjacent center spacing is 5~10mm in described second group of four thermocouples.
Brief description of the drawings
Fig. 1 is the structural representation of LED wafer quick anneal oven in the present invention.
Fig. 2 is thermocouple putting position is bowed to schematic diagram above quick anneal oven wafer-supporting platform in the present invention.
Embodiment
First, the structure explanation of LED wafer quick anneal oven：
In Fig. 1,100 be the chamber of quick anneal oven, and 101 is are connected to the chamber door on front side of chamber, and 102 be to be arranged in chamber 100
Interior wafer-supporting platform support frame, the 103 square wafer wafer-supporting platform to be made up of graphite material, wafer-supporting platform 103 is fixed on wafer-supporting platform
On support frame 102.104 be upper wall heating lamp（Totally 5 groups are respectively SCR1 ~ SCR5, every group of 3 filaments）, 105 be side wall heating lamp
（Totally 2 groups are respectively SCR9 ~ SCR10, every group of 2 filaments）, 106 be lower wall heating lamp（Totally 3 groups are respectively SCR6 ~ SCR8, every group
4 ~ 5 filaments）.
2nd, school temperature：
As shown in Fig. 2 placing eight thermocouples 200 of 1-8 sequence numbers on wafer-supporting platform 103, eight thermocouples are in same level
Face；Eight thermocouples 200 point, two groups of arrangements, first group is 1,4,5 and 8 four thermocouples, is arranged in wafer-supporting platform 103
4 angles, adjacent center spacing is 1100mm；Second group is 2,3,6 and 7 four thermocouples, is arranged in wafer-supporting platform 103
Center, and adjacent center spacing is 5~10mm.
The sensing output line of each thermocouple 200 is connected on silicon substrate thermocouple temperature measurer.
Chamber door 101 is closed, LED wafer annealing temperature is set in 450 DEG C, passes through 5 groups of upper wall heating lamps 104 of adjustment
Pid value（Or K values）, it is consistent to make the temperature adjustmemt above measured by eight thermocouples that silicon substrate thermocouple temperature measurer is shown, is
450±5℃.Now complete the calibration that graphite holds the horizontal thermal field above piece.
First group of four thermocouples difference is padded at away from graphite wafer-supporting platform 2.5mm, chamber door 101 is closed, LED is brilliant
Circle annealing temperature is set in 450 DEG C, mainly 3 groups of lower wall heating lamps 106 of adjustment, secondary 5 groups of upper wall heating lamps 104 of adjustment, side wall
The pid value of heating lamp 105（Or K values）, repair the temperature above measured by eight thermocouples that silicon substrate thermocouple temperature measurer is shown
Just it is being consistent, is being 450 ± 5 DEG C.Now complete the calibration that graphite holds longitudinal thermal field above piece.
3rd, apply：
After calibration by above vertical, horizontal thermal field, by LED wafer be placed on graphite wafer-supporting platform 103 carry out short annealing 10~
60 seconds.
Experiment is proved：This rta technique can make the temperature of LED wafer plane and warped surface basically identical, can shape
Into good Ohmic contact.
Claims (3)
1. a kind of school temperature method of LED wafer quick anneal oven, it is characterised in that comprise the following steps：
1）Eight thermocouples are placed on the square graphite wafer-supporting platform of quick anneal oven, eight thermocouples are divided to two groups of cloth
Put, four thermocouples of every group four, first group are arranged in 4 angles of wafer-supporting platform, second group of four thermocouples difference
The center of wafer-supporting platform is arranged in, and eight thermocouples are in same level；
2）By the pid value for adjusting the heating source of diverse location in quick anneal oven so that any the two of eight thermocouple sensings
Deviation between individual temperature is less than ± 5 DEG C；
3）First group of four thermocouples difference is padded at away from graphite wafer-supporting platform 2.5mm, then by adjusting quick anneal oven
The pid value of the heating source of interior diverse location so that the deviation between any two temperature of eight thermocouple sensings is less than ± 5
℃。
2. the school temperature method of LED wafer quick anneal oven according to claim 1, it is characterised in that four of described first group
Adjacent center spacing is 1100mm in thermocouple.
3. the school temperature method of LED wafer quick anneal oven according to claim 2, it is characterised in that four of described second group
Adjacent center spacing is 5~10mm in thermocouple.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710220395.XA CN107204290B (en) | 2017-04-06 | 2017-04-06 | A kind of school temperature method of LED wafer quick anneal oven |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710220395.XA CN107204290B (en) | 2017-04-06 | 2017-04-06 | A kind of school temperature method of LED wafer quick anneal oven |
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| CN107204290A true CN107204290A (en) | 2017-09-26 |
| CN107204290B CN107204290B (en) | 2019-08-27 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109506813A (en) * | 2018-12-10 | 2019-03-22 | 中国航发四川燃气涡轮研究院 | A kind of method for annealing in thermometric crystal probe calibration process |
| CN111816594A (en) * | 2020-08-28 | 2020-10-23 | 上海华力微电子有限公司 | Rapid thermal annealing equipment |
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| CN101173874A (en) * | 2006-10-31 | 2008-05-07 | 佛山市顺德区顺达电脑厂有限公司 | Thermocouple type thermometer testing apparatus |
| US7727910B2 (en) * | 2007-02-13 | 2010-06-01 | Micron Technology, Inc. | Zirconium-doped zinc oxide structures and methods |
| US20110008621A1 (en) * | 2006-03-30 | 2011-01-13 | Schujman Sandra B | Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them |
| CN106012026A (en) * | 2016-08-04 | 2016-10-12 | 汪锐 | Annealing apparatus used for making LED wafers |
-
2017
- 2017-04-06 CN CN201710220395.XA patent/CN107204290B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110008621A1 (en) * | 2006-03-30 | 2011-01-13 | Schujman Sandra B | Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them |
| CN101173874A (en) * | 2006-10-31 | 2008-05-07 | 佛山市顺德区顺达电脑厂有限公司 | Thermocouple type thermometer testing apparatus |
| US7727910B2 (en) * | 2007-02-13 | 2010-06-01 | Micron Technology, Inc. | Zirconium-doped zinc oxide structures and methods |
| CN106012026A (en) * | 2016-08-04 | 2016-10-12 | 汪锐 | Annealing apparatus used for making LED wafers |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109506813A (en) * | 2018-12-10 | 2019-03-22 | 中国航发四川燃气涡轮研究院 | A kind of method for annealing in thermometric crystal probe calibration process |
| CN109506813B (en) * | 2018-12-10 | 2020-12-29 | 中国航发四川燃气涡轮研究院 | Annealing method in calibration process of temperature measurement crystal sensor |
| CN111816594A (en) * | 2020-08-28 | 2020-10-23 | 上海华力微电子有限公司 | Rapid thermal annealing equipment |
| CN111816594B (en) * | 2020-08-28 | 2022-12-02 | 上海华力微电子有限公司 | Rapid thermal annealing equipment |
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| CN107204290B (en) | 2019-08-27 |
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