CN107204290B - A kind of school temperature method of LED wafer quick anneal oven - Google Patents
A kind of school temperature method of LED wafer quick anneal oven Download PDFInfo
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- CN107204290B CN107204290B CN201710220395.XA CN201710220395A CN107204290B CN 107204290 B CN107204290 B CN 107204290B CN 201710220395 A CN201710220395 A CN 201710220395A CN 107204290 B CN107204290 B CN 107204290B
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- led wafer
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- thermocouples
- anneal oven
- quick anneal
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
Abstract
A kind of school temperature method of LED wafer quick anneal oven, belong to the production technical field of semiconductor material, in addition the present invention increases the calibration of longitudinal thermal field after the calibration of lateral thermal field, to guarantee that LED wafer plane and warped surface temperature during short annealing are almost the same, to ensure the effect annealed, the problem for causing thermal field inconsistent because of warpage is well solved, make LED wafer that can form good Ohmic contact in plane and warped surface, to improve the short annealing qualification rate of LED wafer, especially 4 cun and the above LED wafer.
Description
Technical field
The invention belongs to the production technical fields of semiconductor material, in particular to LED wafer rta technique.
Background technique
LED wafer short annealing refers in a short time, after the wafer of processing to be annealed to be increased to required temperature, into
Row annealing, to achieve the purpose that lattice defect annealing, crystal regeneration and the activation and diffusion of ion implantation doping atom.?
Ion implanting using upper, rapid temperature rise and drop heat treatment processing procedure can make the foreign atom activation of injection, since its heating rate is fast
And the time of heat treatment is short, can effectively reduce junction depth and effective channel length, rapid temperature rise and drop is heat-treated in semiconductor skill
It is more and more important in art.
LED wafer short annealing be will be formed by thermal diffusion between the electrode material and wafer material of LED wafer vapor deposition it is good
Good Ohmic contact, to reduce the positive operating voltage of LED.
LED wafer quick anneal oven recycles framework using warm wall type water, using halogen lamp tube as heating source, heat by it is upper,
Under, the halogen lamp tube of side wall be transmitted in furnace on positive way graphite wafer-supporting platform, can be fast since graphite has preferable conductive performance
Speed absorbs heat and increases own temperature, and high temperature is passed to the LED wafer being placed on it, and LED wafer, which absorbs, comes from halogen
Plain fluorescent tube direct irradiation and graphite wafer-supporting platform two parts heat cooperate 10~15 groups of temperature-controlled zones and 2 groups of thermocouples to carry out
Actual temperature in furnace is monitored and compared, chip to be processed is placed in quartz chamber body, quick anneal oven heating rate is about
40~50 DEG C/S, with the N of 5~10sccm in annealing process2It is protected, annealing time is 10~60 seconds, and treatment temperature is
Between 400~550 DEG C, to achieve the effect that be rapidly heated.
It is known that the temperature uniformity in annealing furnace cavity has a major impact the annealing effect of wafer, and due to halogen
Fluorescent tube, with using the increase heating efficiency of time to reduce, can need to carry out in some cycles the PID amendment and calibration of temperature control,
Current school temperature mode is the lateral thermal field measured on wafer wafer-supporting platform using 8 thermocouple temperature measurers, is stuck up when LED wafer does not have
Qu Shi can satisfy the requirement of temperature uniformity, but when wafer size increases to 4 cun or more, because wafer area is larger
It will appear warpage, this is because laterally and longitudinally larger difference occurs in staggered integrated temperature field for appearance, need at this time a kind of new
School temperature method could ensure the uniform of crystal column surface thermal field.
Summary of the invention
To solve the above problems, the present invention provides a kind of suitable quick anneal oven schools for processing 4 cun and the above LED wafer
Warm method.
Technical solution of the present invention the following steps are included:
1) eight thermocouples are placed on the square graphite wafer-supporting platform of quick anneal oven, eight thermocouples are divided to two groups
Arrangement, every group four, first group of four thermocouples are arranged in 4 angles of wafer-supporting platform, second group of four thermocouples point
It is not arranged in the center of wafer-supporting platform, and eight thermocouples are in same level；
2) by adjusting the pid value of the heating source of different location in quick anneal oven, so that times of eight thermocouple sensings
Deviation between two temperature of anticipating is less than ± 5 DEG C；
3) first group of four thermocouples difference is padded at away from graphite wafer-supporting platform 2.5mm, then by adjusting quickly moving back
The pid value of the heating source of different location in stove, so that the deviation between any two temperature of eight thermocouples sensing is less than
±5℃。
Step 2 is to hold the lateral thermal field above piece to graphite in quick anneal oven to calibrate；And step 3) is then to fast
Graphite holds longitudinal thermal field above piece and is calibrated in fast annealing furnace.
In addition the present invention increases the calibration of longitudinal thermal field after the calibration of lateral thermal field, to guarantee LED wafer in short annealing
Plane and warped surface temperature are almost the same in the process, to ensure the effect annealed, have well solved because warpage leads to thermal field not
Consistent problem makes LED wafer can form good Ohmic contact in plane and warped surface, to improve LED wafer, especially
It is the short annealing qualification rate of 4 cun and the above LED wafer.
Further, in order to ensure the accuracy of measurement, it is capable of measuring the temperature field to around outer ring, of the present invention first
Adjacent center spacing is 1100mm in four thermocouples of group.
Similarly, adjacent center spacing is 5~10mm in described second group of four thermocouples.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of LED wafer quick anneal oven in the present invention.
Fig. 2 is that thermocouple placement position is bowed to schematic diagram above quick anneal oven wafer-supporting platform in the present invention.
Specific embodiment
One, the structure explanation of LED wafer quick anneal oven:
In Fig. 1,100 be the chamber of quick anneal oven, and 101 be the chamber door being connected on front side of chamber, and 102 be to be arranged in chamber
Wafer-supporting platform support frame in 100,103 be the square wafer wafer-supporting platform made of graphite material, and wafer-supporting platform 103, which is fixed on, holds piece
On platform support frame 102.104 be upper wall heating lamp (totally 5 groups are respectively SCR1 ~ SCR5, every group of 3 filaments), and 105 heat for side wall
Lamp (totally 2 groups are respectively SCR9 ~ SCR10, every group of 2 filaments), 106 be that (totally 3 groups are respectively SCR6 ~ SCR8 to lower wall heating lamp, often
4 ~ 5 filaments of group).
Two, school temperature:
As shown in Fig. 2, placing eight thermocouples 200 of 1-8 serial number on wafer-supporting platform 103, eight thermocouples are in same
Horizontal plane；Eight thermocouples 200 are divided to two groups of arrangements, and first group is 1,4,5 and 8 four thermocouples, are arranged in wafer-supporting platform
103 4 angles, adjacent center spacing are 1100mm；Second group is 2,3,6 and 7 four thermocouples, is arranged in wafer-supporting platform
103 center, and adjacent center spacing is 5~10mm.
The sensing output line of each thermocouple 200 is connected on silicon substrate thermocouple temperature measurer.
Chamber door 101 is closed, LED wafer annealing temperature is set in 450 DEG C, by adjusting 5 groups of upper wall heating lamps 104
Pid value (or K value), temperature adjustmemt measured by above eight thermocouples for showing silicon substrate thermocouple temperature measurer is consistent, is
450±5℃.The calibration for the lateral thermal field that graphite is held above piece is completed at this time.
First group of four thermocouples difference is padded at away from graphite wafer-supporting platform 2.5mm, chamber door 101 is closed, by LED crystalline substance
Circle annealing temperature is set in 450 DEG C, mainly adjusts 3 groups of lower wall heating lamps 106, secondary adjustment 5 groups of upper wall heating lamps 104, side walls
The pid value (or K value) of heating lamp 105, temperature measured by above eight thermocouples for showing silicon substrate thermocouple temperature measurer are repaired
Just it is being consistent, is being 450 ± 5 DEG C.The calibration for longitudinal thermal field that graphite is held above piece is completed at this time.
Three, it applies:
After calibration by the above vertical, horizontal thermal field, LED wafer is placed on graphite wafer-supporting platform 103 and carries out short annealing
10~60 seconds.
Test proves: this rta technique can make the temperature of LED wafer plane and warped surface almost the same, can shape
At good Ohmic contact.
Claims (3)
1. a kind of school temperature method of LED wafer quick anneal oven, it is characterised in that the following steps are included:
1) eight thermocouples are placed on the square graphite wafer-supporting platform of quick anneal oven, eight thermocouples are divided to two groups of cloth
It sets, every group four, first group of four thermocouples are arranged in 4 angles of wafer-supporting platform, second group of four thermocouples difference
It is arranged in the center of wafer-supporting platform, and eight thermocouples are in same level；
2) by adjusting the pid value of the heating source of different location in quick anneal oven, so that any the two of eight thermocouples sensing
Deviation between a temperature is less than ± 5 DEG C；
3) first group of four thermocouples difference is padded at away from graphite wafer-supporting platform 2.5mm, then by adjusting quick anneal oven
The pid value of the heating source of interior different location, so that the deviation between any two temperature of eight thermocouples sensing is less than ± 5
℃。
2. the school temperature method of LED wafer quick anneal oven according to claim 1, it is characterised in that four of described first group
Adjacent center spacing is 1100mm in thermocouple.
3. the school temperature method of LED wafer quick anneal oven according to claim 2, it is characterised in that four of described second group
Adjacent center spacing is 5~10mm in thermocouple.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710220395.XA CN107204290B (en) | 2017-04-06 | 2017-04-06 | A kind of school temperature method of LED wafer quick anneal oven |
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| CN201710220395.XA CN107204290B (en) | 2017-04-06 | 2017-04-06 | A kind of school temperature method of LED wafer quick anneal oven |
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| CN107204290B true CN107204290B (en) | 2019-08-27 |
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| CN109506813B (en) * | 2018-12-10 | 2020-12-29 | 中国航发四川燃气涡轮研究院 | Annealing method in calibration process of temperature measurement crystal sensor |
| CN111816594B (en) * | 2020-08-28 | 2022-12-02 | 上海华力微电子有限公司 | Rapid thermal annealing equipment |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101173874A (en) * | 2006-10-31 | 2008-05-07 | 佛山市顺德区顺达电脑厂有限公司 | Thermocouple type thermometer testing apparatus |
| US7727910B2 (en) * | 2007-02-13 | 2010-06-01 | Micron Technology, Inc. | Zirconium-doped zinc oxide structures and methods |
| CN106012026A (en) * | 2016-08-04 | 2016-10-12 | 汪锐 | Annealing apparatus used for making LED wafers |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9034103B2 (en) * | 2006-03-30 | 2015-05-19 | Crystal Is, Inc. | Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them |
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- 2017-04-06 CN CN201710220395.XA patent/CN107204290B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101173874A (en) * | 2006-10-31 | 2008-05-07 | 佛山市顺德区顺达电脑厂有限公司 | Thermocouple type thermometer testing apparatus |
| US7727910B2 (en) * | 2007-02-13 | 2010-06-01 | Micron Technology, Inc. | Zirconium-doped zinc oxide structures and methods |
| CN106012026A (en) * | 2016-08-04 | 2016-10-12 | 汪锐 | Annealing apparatus used for making LED wafers |
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