CN206210757U - Contactless wafer annealing device - Google Patents
Contactless wafer annealing device Download PDFInfo
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- CN206210757U CN206210757U CN201621164041.5U CN201621164041U CN206210757U CN 206210757 U CN206210757 U CN 206210757U CN 201621164041 U CN201621164041 U CN 201621164041U CN 206210757 U CN206210757 U CN 206210757U
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- wafer
- annealing device
- microscope carrier
- air supporting
- contactless
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Abstract
The utility model discloses a kind of contactless wafer annealing device, the annealing device includes wafer, air supporting microscope carrier, light source, infrared temperature probe and controller, wherein, air supporting microscope carrier uniformly gather multiple stomatas, gas is passed through from the stomata, forms air cushion, supports the wafer；Light source is arranged on the surface of wafer, and wafer is heated by radiating；Infrared temperature probe is arranged on immediately below air supporting microscope carrier, by the thermometric hole measurement wafer temperature being arranged at air supporting microscope carrier diameter；Controller is connected with infrared temperature probe.Easy to operate using the utility model, annealing temperature is uniform, and certainty of measurement is high, wafer can be avoided to damage and can be annealed to wafer rear while wafer molded front and edge is not damaged, and from realizing automation mechanized operation.
Description
Technical field
The utility model is related to a kind of wafer annealing device, more particularly to a kind of contactless wafer annealing device.
Background technology
With the development of science and technology semiconductor chip has been applied to the every field of social life, chip is generally by wafer
It is made, all silicon in this way of the wafer or other wafers of semiconductor material.In manufacturing process, according to different manufacturing process, for example
Alloy, oxidation or nitridation, ion implanting annealing, dopant activation and gettering etc., generally require to carry out wafer multiple step anneal heat
Treatment, is repaired the damage of crystal, and eliminate dislocation and grown-in defects.
Prior art is generally placed on wafer on the quartzy frame in process cavity, and is heated with the radiation of light source of high intensity brilliant
Circle.Light source is typically the fluorescent tube of array arrangement, the different position of different fluorescent tube irradiation crystal column surfaces.Usually using thermocouple measurement
The temperature of shady face, the contact type measurement of thermocouple is clearly have limitation, crystal column surface may be caused to damage, and survey
Accuracy of measurement is general.Quartzy frame can influence the transmission of crystal column surface heat with wafer contacts；Because the irradiation of different fluorescent tubes is with poor
The opposite sex, if to the irradiation centralized Control of fluorescent tube, this will result in the uneven of wafer annealing temperature.In some techniques, wafer
Front produced integrated circuit, also need to anneal its back side, then the front of wafer is not suitable for and quartz contact,
If contact, easily causes the damage of front-side integrated circuit and wafer heating-up temperature is uneven；If only using bracket support crystal round fringes,
Carry out back side heating anneal, then because thermal stress can cause wafer distortion again in annealing process, especially large scale wafer.
Annealing temperature is uneven, and crystal column surface damage phenomenon can directly affect the electric property of semiconductor chip, so, such as
What avoid above mentioned problem appearance be association area at present it is urgently to be resolved hurrily.
The content of the invention
For the drawbacks described above of prior art, the purpose of this utility model is to provide a kind of easy to operate, annealing temperature
Uniformly, certainty of measurement is high, can avoid wafer damage and can be while wafer frontside and edge not be damaged to wafer rear
The supermatic contactless wafer annealing device annealed.
The utility model provides a kind of contactless wafer annealing device, including wafer, air supporting microscope carrier, light source, infrared survey
Temperature probe and controller, wherein：
Air supporting microscope carrier uniformly gathers multiple stomatas, and gas is passed through from the stomata, air cushion is formed, for supporting the crystalline substance
Circle, sets thermometer hole at the air supporting microscope carrier diameter；
Light source is arranged on the surface of wafer, and wafer is heated by radiating；
Infrared temperature probe is arranged on immediately below air supporting microscope carrier, by the thermometric hole measurement wafer temperature；
Controller is connected with the infrared temperature probe, controls light irradiation power and then controls wafer temperature.
One kind is annealed with contactless wafer annealing device, is comprised the following steps：
Air supporting microscope carrier is passed through first gas, forms air cushion, and then wafer is placed on air cushion；
Airtight chamber is purged to second gas are passed through in device；
Purging stops being passed through second gas after finishing, and starts to be passed through third gas, while open light source heated, it is infrared
Temperature probe infrared light is by thermometric hole measurement wafer shady face temperature, measurement data control of the controller according to infrared temperature probe
Light irradiation power processed, and then control heating rate；
Heat up and stop heating after a period of time, stopping is passed through third gas, is changed to be passed through second gas and airtight chamber is entered
Row purging cooling, takes out wafer when cooling to 500 DEG C, continue to cool down at room temperature, is cooled to room temperature, and then device shutdown, stops
Only all gas are passed through.
Relative to the annealing device of prior art, there is contactless annealing device of the present utility model following technology to imitate
Really：
1) contactless wafer annealing device of the present utility model, makes wafer suspend and anneals, can drop using air supporting microscope carrier
It is low because contact is touched and caused by wafer damage situation.
2) contactless wafer annealing device of the present utility model, makes wafer suspend and anneals, if wafer using air supporting microscope carrier
Front has been molded, in the case where wafer frontside is not damaged, it is also possible to which the back side is annealed, homogeneous heating.
3) contactless wafer annealing device of the present utility model, the situation of wafer is not being contacted using infrared temperature probe
Under wafer is measured, it is to avoid crystal column surface is caused to damage, and certainty of measurement is high, detection rates are fast.
4) contactless wafer annealing device of the present utility model, Power Control is carried out using controller to temperature measuring device,
Make wafer annealing temperature more uniform.
5) annealed using the utility model wafer annealing device, it is easy to operate, adapt to various annealing process.
6) annealed using the utility model wafer annealing device, be capable of achieving supermatic continuous productive process.
Brief description of the drawings
Fig. 1 is the contactless wafer annealing device structural representation of the utility model.
Fig. 2 is air supporting stage structure schematic diagram in the contactless wafer annealing device of the utility model.
Specific embodiment
Below in conjunction with the accompanying drawing in the utility model embodiment, the technical scheme in the utility model embodiment is carried out
Clearly and completely describe：
As shown in Figure 1, 2, a kind of contactless wafer annealing device, including wafer 2, air supporting microscope carrier 3, light source, infrared survey
Temperature probe 5 and controller 6, wherein：
Light source is array arrangement fluorescent tube 1, the diverse location on the irradiation wafer 2 of different fluorescent tubes 1 surface；
The section of air supporting microscope carrier 3 is circle, and its middle setting thermometer hole 4, the thermometer hole 4 is straight positioned at the air supporting microscope carrier 3
At path position, and thermometer hole 4 length more than or equal to wafer 2 diameter length.The width of thermometer hole 4 is according to infrared temperature probe
5 size determination, and it is more narrow better, but infrared measurement of temperature can not be blocked.The porous ceramics of the preferred high-quality of air supporting microscope carrier 3, thereon
The uniform multiple stomata that gathers, gas sprays to form air cushion from stomata, for supporting wafer 2, wafer 2 is suspended in device, real
Existing zero frictionally heats annealing.The gas being wherein passed through is argon gas, and nitrogen, hydrogen etc. can also be selected according to technique needs.
Fluorescent tube 1 is arranged on the surface of wafer 2, and wafer 2 is heated by heat radiation；
The array arrangement of infrared temperature probe 5 is arranged on immediately below air supporting microscope carrier 3, and the shady face of wafer 2 is measured by thermometer hole 4
Temperature.Controller 6 is connected with infrared temperature probe 5, and controller 6 is controlled according to the measurement data that infrared temperature probe 5 is transmitted
The irradiation power of fluorescent tube 1, uniformity heating is carried out to wafer 2.Wherein, a region of the heating wafer 2 of fluorescent tube 1, one
Infrared temperature probe 5 corresponds to a fluorescent tube 1 and monitors the temperature of the heating region of fluorescent tube 1.
One kind is annealed with contactless wafer annealing device, is comprised the following steps：
Before wafer 2 is put into, air supporting microscope carrier 3 is passed through normal temperature argon gas, forms air cushion, and then wafer 2 is placed on air cushion；
Be passed through 15000sccm nitrogen to device carries out 1min purgings to airtight chamber, wherein, closed airtight chamber two ends point
Lian Jie not air inlet and gas outlet；
Purging stops being passed through nitrogen after finishing, by 1：1 ratio, argon gas and hydrogen are passed through with 2600sccm flows, while opening
Open fluorescent tube 1 to begin to warm up, control 40 DEG C/min of heating rate, be warmed up to 1100 DEG C, kept for 1 hour, period, infrared temperature probe
5 measure the shady face temperature of wafer 2 by thermometer hole 4, and controller controls the spoke of fluorescent tube 1 according to the measurement data of infrared temperature probe 5
According to power, and then control heating rate；
Stop heating, stopping is passed through argon gas and hydrogen, and be changed to be passed through 15000sccm nitrogen carries out purging drop to airtight chamber
Temperature, takes out wafer 2, and be cooled to room temperature at room temperature when cooling to 500 DEG C using manipulator；Device shutdown afterwards, stops institute
There is gas to be passed through.
In sum, the air supporting microscope carrier and infrared temperature probe of the contactless wafer annealing device of the utility model can be with
The temperature homogeneity of wafer annealing is reached, crystal column surface damaged condition is reduced；Annealed with the device, it is simple to operate,
It is capable of achieving increasingly automated continuous productive process.
The utility model preferred embodiment is described above in association with accompanying drawing, but the utility model is not limited to
The specific embodiment stated, above-mentioned specific embodiment is only schematical, be not it is restricted, this area it is common
Technical staff is not departing from the utility model objective and scope of the claimed protection situation under enlightenment of the present utility model
Under, many forms can also be made, these are belonged within the utility model protection domain.
Claims (7)
1. a kind of contactless wafer annealing device, it is characterised in that：Including wafer, air supporting microscope carrier, light source, infrared temperature probe
And controller, wherein：
The air supporting microscope carrier uniformly gathers multiple stomatas, and gas is passed through from the stomata, air cushion is formed, for supporting the crystalline substance
Circle, sets thermometer hole at the air supporting microscope carrier diameter；
The light source is arranged on the surface of wafer, and wafer is heated by radiating；
The infrared temperature probe is arranged on immediately below air supporting microscope carrier, by the thermometric hole measurement wafer temperature；
The controller is connected with the infrared temperature probe, controls light irradiation power and then controls wafer temperature.
2. contactless wafer annealing device according to claim 1, it is characterised in that：The light source and the infrared survey
Temperature probe is array arrangement.
3. contactless wafer annealing device according to claim 2, it is characterised in that：One light source heating wafer
A region, infrared temperature probe one light source of correspondence simultaneously monitors the temperature of the light source heating region.
4. contactless wafer annealing device according to claim 1, it is characterised in that：The thermometric hole length more than etc.
In diameter wafer.
5. contactless wafer annealing device according to claim 1, it is characterised in that：The air supporting microscope carrier cross section is
Circle, has a diameter larger than equal to diameter wafer.
6. contactless wafer annealing device according to claim 1, it is characterised in that：The infrared temperature probe is infrared
Light passes through thermometric hole measurement wafer shady face temperature.
7. contactless wafer annealing device according to claim 1, it is characterised in that：The air supporting microscope carrier is porous pottery
Porcelain.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621164041.5U CN206210757U (en) | 2016-10-25 | 2016-10-25 | Contactless wafer annealing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621164041.5U CN206210757U (en) | 2016-10-25 | 2016-10-25 | Contactless wafer annealing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206210757U true CN206210757U (en) | 2017-05-31 |
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ID=58757624
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621164041.5U Active CN206210757U (en) | 2016-10-25 | 2016-10-25 | Contactless wafer annealing device |
Country Status (1)
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| CN (1) | CN206210757U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106409730A (en) * | 2016-10-25 | 2017-02-15 | 北京鼎泰芯源科技发展有限公司 | Non-contact wafer annealing device and method |
| CN113732525A (en) * | 2021-09-03 | 2021-12-03 | 湖北三维半导体集成创新中心有限责任公司 | Wafer cutting method |
| CN114318547A (en) * | 2021-12-24 | 2022-04-12 | 武汉嘉仪通科技有限公司 | Infrared fast annealing furnace |
-
2016
- 2016-10-25 CN CN201621164041.5U patent/CN206210757U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106409730A (en) * | 2016-10-25 | 2017-02-15 | 北京鼎泰芯源科技发展有限公司 | Non-contact wafer annealing device and method |
| CN106409730B (en) * | 2016-10-25 | 2024-06-04 | 珠海鼎泰芯源晶体有限公司 | Non-contact wafer annealing device and annealing method thereof |
| CN113732525A (en) * | 2021-09-03 | 2021-12-03 | 湖北三维半导体集成创新中心有限责任公司 | Wafer cutting method |
| CN114318547A (en) * | 2021-12-24 | 2022-04-12 | 武汉嘉仪通科技有限公司 | Infrared fast annealing furnace |
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| Date | Code | Title | Description |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20170807 Address after: 100080 Haidian District street, Haidian, building B, block 10, level 340, level 3, Patentee after: Beijing Ding Tai Xinyuan Technology Development Co. Ltd. Address before: 519085 Guangdong province Zhuhai city road two Jinding Industrial Area high-tech zone on the south side of A1 building, Rui Patentee before: Zhuhai Ding Tai Xinyuan crystal Ltd |
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| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20170824 Address after: 519085 Guangdong province Zhuhai city road two Jinding Industrial Area high-tech zone on the south side of A1 building, Rui Patentee after: Zhuhai Ding Tai Xinyuan crystal Ltd Address before: 100080 Haidian District street, Haidian, building B, block 10, level 340, level 3, Patentee before: Beijing Ding Tai Xinyuan Technology Development Co. Ltd. |
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| TR01 | Transfer of patent right |