CN111816594A - Rapid thermal annealing equipment - Google Patents
Rapid thermal annealing equipment Download PDFInfo
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- CN111816594A CN111816594A CN202010884966.1A CN202010884966A CN111816594A CN 111816594 A CN111816594 A CN 111816594A CN 202010884966 A CN202010884966 A CN 202010884966A CN 111816594 A CN111816594 A CN 111816594A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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Abstract
The invention provides a rapid thermal annealing device, which comprises: a reaction chamber; the preheating lamp source is arranged at the top of the reaction chamber; the wafer temperature detector is arranged in the reaction chamber to measure the temperature of the wafer in real time; the cavity wall temperature detector is arranged in the reaction chamber to measure the temperature of the reaction chamber in real time; the heating coil is arranged on the wall of the reaction chamber; and the control module is arranged on the cavity wall of the reaction chamber and used for controlling the switch or the power of the preheating lamp source and the heating coil according to the temperature acquired by the cavity wall temperature detector and/or the wafer temperature detector. The invention solves the problem of quality reduction caused by uneven heating of the wafer in the prior art.
Description
Technical Field
The invention relates to the technical field of semiconductor equipment, in particular to rapid thermal annealing equipment.
Background
The rapid thermal annealing is one of semiconductor processing technologies, and aims to place a wafer in a required temperature and environmental condition for a certain time, and promote atoms in the wafer to rearrange lattice positions by using thermal energy so as to reduce lattice defects and activate doping elements.
The rapid thermal annealing is based on the thermal radiation principle, the heat source for heating generally adopts a bulb set, however, because the reaction chamber space for the rapid thermal annealing is large, the bulb set which undertakes the main heating task has no time to consider all the areas in the reaction chamber, such as the edge area in the reaction chamber, the air inlet and the air outlet of the reaction chamber, the temperature of the areas is relatively low, the wafer is heated unevenly, and the wafer quality is finally reduced. Therefore, there is a need for an accurate and efficient rapid thermal annealing preheating and temperature compensation system.
Disclosure of Invention
The invention aims to provide rapid thermal annealing equipment to solve the problem of quality reduction caused by uneven heating of a wafer.
In order to achieve the above object, the present invention provides a rapid thermal annealing apparatus, comprising: a reaction chamber;
the preheating lamp source is arranged at the top of the reaction chamber;
the wafer temperature detector is arranged in the reaction chamber to measure the temperature of the wafer in real time;
the cavity wall temperature detector is arranged in the reaction chamber to measure the temperature of the reaction chamber in real time;
the heating coil is arranged on the wall of the reaction chamber;
and the control module is arranged on the cavity wall of the reaction chamber and used for controlling the switch and the power of the preheating lamp source and the heating coil according to the temperature acquired by the cavity wall temperature detector and/or the wafer temperature detector.
Optionally, when the temperature obtained by the cavity wall temperature detector is less than a preheating threshold, the control module starts the preheating lamp source and the heating coil to preheat; when the temperature acquired by the cavity wall temperature detector is less than a preheating threshold value and the temperature acquired by the wafer temperature detector, the control module controls the heating coil to increase power for thermal compensation; when the temperature acquired by the cavity wall temperature measurer is greater than a preheating threshold value, the control module controls the preheating lamp source and the heating coil to increase power for annealing; and when the temperature acquired by the cavity wall temperature detector is greater than a preheating threshold value and less than the temperature acquired by the wafer temperature detector, the control module controls the heating coil to increase power for thermal compensation.
Optionally, the heating coil is an electromagnetic induction heating coil, and the electromagnetic induction heating coil is embedded in the cavity wall of the reaction chamber.
Optionally, the electromagnetic induction heating coil is arranged around the cavity of the reaction chamber.
Optionally, the cavity wall temperature detector comprises a plurality of radiation temperature detectors, and the radiation temperature detectors are arranged on the cavity wall of the reaction chamber.
Optionally, the radiation thermometers are uniformly distributed along the circumferential direction of the cavity wall of the reaction chamber.
Optionally, the apparatus further comprises a bearing table for bearing the wafer, the bearing table is arranged in the reaction chamber, and the wafer temperature detector is arranged below the bearing table.
Optionally, the number of the wafer thermometers is a plurality, and the plurality of wafer thermometers are distributed along the radial direction of the bearing table.
Optionally, the reaction chamber further comprises a reflector, the reflector is arranged in the reaction chamber, and the wafer temperature detector is embedded in the reflector.
Optionally, the preheat lamp source comprises a plurality of heating bulbs.
In the rapid thermal annealing equipment provided by the invention, a preheating lamp source is arranged at the top of a reaction chamber to preheat the reaction chamber; the temperature of the wafer can be obtained through the wafer temperature detector, the temperature of the wafer can be obtained, the temperature of the edge area of the reaction chamber can be accurately obtained by arranging the cavity wall temperature detector on the cavity wall of the reaction chamber, and the temperature obtained by the wafer temperature detector and the cavity wall temperature detector is controlled by the control module to switch or power of the preheating lamp source and the heating coil; the heating coil can perform thermal compensation on the area which is not positioned right below the preheating lamp source, and the compensation temperature can be adjusted by adjusting the power of the heating coil, so that the whole area in the reaction chamber can be fully preheated, the temperature balance of the reaction chamber is realized, and the uniformity of the operation environment is improved; and the first effect caused by insufficient preheating is reduced, the problem of poor uniformity of the wafer caused by uneven heating is solved, and the product quality problems such as warping and deformation of the wafer are effectively reduced.
Drawings
Fig. 1 is a schematic front view of a structure according to an embodiment of the present invention;
FIG. 2 is a schematic top view of a structure according to an embodiment of the present invention;
in the drawings: 11-preheating the lamp source; 12-a reaction chamber; 13-radiation temperature detector; 14-a wafer; 15-wafer temperature detector; 16-a reflector panel; 17-a carrier table; 21-cavity wall; 22-electromagnetic induction heating coil.
Detailed Description
The following describes in more detail embodiments of the present invention with reference to the schematic drawings. The advantages and features of the present invention will become more apparent from the following description. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
Fig. 1 is a schematic front structure diagram provided in the present embodiment, and fig. 2 is a schematic top structure diagram provided in the present embodiment. Referring to fig. 1 and 2, the present invention provides a rapid thermal annealing apparatus for preheating and temperature compensation of a reaction chamber, including a reaction chamber 12, a preheating lamp source 11, a heating coil, a wafer temperature detector 15, a chamber wall temperature detector, a control module, and a susceptor 17.
In the embodiment, the reaction chamber 12 is cylindrical, a cavity wall of the reaction chamber 12 is provided with a gas inlet and a gas outlet, the gas inlet and the gas outlet are arranged opposite to each other with a horizontal central axis of the reaction chamber 12, so that the gas can rapidly flow and be discharged through the gas outlet after the gas is introduced into the gas inlet, and a horizontal arrow direction in fig. 1 is a flow direction of the gas. The gas introduced may be an inert gas used to exhaust oxygen from the reaction chamber 12 to prevent further oxidation during rapid thermal annealing of the wafer 14, or other gases as desired.
The bearing table 17 is arranged at the bottom of the reaction chamber 12, and the bearing table 17 is annular and used for placing and fixing the wafer 14, so that the wafer 14 cannot move in the preheating and annealing processes.
The wafer temperature detector 15 is disposed in the reaction chamber 12 and is used for measuring the temperature of the wafer 14 in real time. The temperature measuring device is specifically arranged under the bearing platform 17, when the wafer 14 is placed on the bearing platform 17, the distance between the wafer temperature measuring device 15 and the wafer 14 is very short, and the temperature can be accurately measured. The number of the wafer temperature detectors 15 is several, the plurality of wafer temperature detectors 15 are distributed along the radial direction from the center to the edge of the bearing table 17, and the plurality of wafer temperature detectors 15 can respectively detect the temperature from the center to the edge of the wafer 14. In this embodiment, the number of the example wafer thermometers 15 is 8, the temperature measuring range of the 8 wafer thermometers 15 is from the center of the wafer 14 to the edge of the wafer, and the 8 wafer thermometers 15 can measure the temperature of the corresponding position to obtain the temperature difference between different positions of the wafer 14.
The cavity wall temperature detector is arranged in the reaction chamber and is used for measuring the temperature of the reaction chamber in real time, in particular the temperature of the edge of the bearing platform 17 in the reaction chamber. Because the wafer temperature detector 15 can accurately measure the temperature of the wafer, it is difficult to accurately obtain the temperature of the edge of the susceptor 17, and in order to obtain the temperature of the edge of the susceptor 17, a chamber wall temperature detector is provided, and the temperature measured by the chamber wall temperature detector is compared with the temperature measured by the wafer temperature detector 15, so as to further obtain the difference between the temperature near the edge of the wafer 14 and the central temperature of the wafer 14. In this embodiment, the cavity wall temperature detector includes a plurality of radiation temperature detectors 13, and a plurality of radiation temperature detectors 13 set up on the cavity wall of reaction chamber, and a plurality of radiation temperature detectors 13 are evenly distributed along the cavity wall circumference of reaction chamber, and every radiation temperature detector 13 is the same to the distance of plummer 17, measures plummer 17 edge and the temperature of wafer 14 edge through every radiation temperature detector 13, can accurately learn the temperature at plummer 17 edge and wafer 14 edge. In this embodiment, the number of radiation thermometers 13 is 4, and 4 radiation thermometers 13 encircle the plummer and arrange, can detect the temperature of corresponding edge from 4 faces to obtain the accurate temperature of edge, the number of radiation thermometers 13 can also be 5, 6 etc..
The preheating lamp source 11 is arranged at the top of the reaction chamber 12, the preheating lamp source 11 and the reaction chamber 12 are hermetically separated by transparent glass, and the on-off or power of the preheating lamp source 11 is controlled by the control module. In the present embodiment, the preheating lamp source 11 comprises a plurality of heating bulbs, the plurality of heating bulbs are arranged at the center of the top of the reaction chamber 12, and the light radiated from the plurality of heating bulbs is radiated onto the susceptor 17 through the transparent glass for heating the reaction chamber 12.
Because the preheating lamp source 11 is the main heating source, the preheating lamp source 11 is located at the top center position of the reaction chamber 12, namely, the position right above the bearing table 17, the area right below the preheating lamp source 11 can be fully preheated, the vertical arrow direction of the preheating lamp source 11 in fig. 1 is the light radiation direction of the preheating lamp source 11, but other special areas not located right below the preheating lamp source 11 cannot be fully preheated, other special areas not located right below the preheating lamp source 11 include the circumferential edge of the bearing table 17, the air inlet position and the air outlet position, if the reaction chamber 12 is unevenly preheated, the wafer 14 is unevenly heated, so that the process parameters are unqualified, and even the wafer 14 is warped and deformed, and other product quality problems are caused.
To solve this problem, further, a heating coil is provided on the chamber wall of the reaction chamber 12 for thermally compensating a specific region not directly under the preheating lamp source 11, thereby uniformly preheating the reaction chamber 12. In this embodiment, the heating coil is an electromagnetic induction heating coil 22, and the operating principle of the electromagnetic induction heating coil 22 is that when an alternating current is applied to the electromagnetic induction heating coil 22, an alternating magnetic field is generated around the electromagnetic induction heating coil 22, and the alternating magnetic field causes the electromagnetic induction heating coil 22 to generate an induced current, which causes atoms inside the electromagnetic induction heating coil to move randomly at a high speed, and the atoms collide with each other and rub to generate heat energy, thereby achieving the heating effect.
In the present embodiment, the electromagnetic induction heating coil 22 is embedded in the wall of the reaction chamber 12, or may be provided on the inner wall of the reaction chamber 12. And the electromagnetic induction heating coil 22 is arranged around the cavity of the reaction chamber, and preferably, the electromagnetic induction heating coil 22 is arranged around the circumferential edge of the carrying table 17 by 360 degrees, so that the circumferential edge of the carrying table 17 can be heated more, and the thermal compensation is more effective. The heat energy of the electromagnetic induction heating coil 22 is dissipated into the reaction chamber 12 through the chamber wall of the reaction chamber 12, and the edge of the carrying table 17 close to the electromagnetic induction heating coil 22 can receive more heat energy, so that the effect of compensating the heat energy of other special areas which are not positioned under the preheating lamp source 11 is achieved, and the preheating in the reaction chamber 12 is uniform. An alternating current power supply with adjustable output power is arranged on an external machine table of the reaction chamber 12, alternating current is provided for the electromagnetic induction heating coil 22, the electromagnetic induction heating coil 22 is in a heating state, the heating temperature of the electromagnetic induction heating coil 22 is related to the power of the provided alternating current, and the heating temperature is changed, namely the output power of the alternating current power supply is changed.
Furthermore, the invention also comprises a reflector which is arranged below the bearing table 17 and used for reflecting light irradiated by the bulb and transmitted through the wafer 14 to the wafer 14, so that the wafer 14 can be heated more completely. In this embodiment, the plurality of wafer thermometers 15 are embedded in the reflector, which facilitates the fixing and temperature measurement of the plurality of wafer thermometers 15.
The control module is arranged on the cavity wall of the reaction chamber 12, and is used for controlling the switches of the preheating lamp source 11 and the heating coil according to the temperature obtained by the cavity wall temperature detector, and controlling the power of the preheating lamp source 11 and the heating coil according to the temperature obtained by the cavity wall temperature detector and the wafer temperature detector 15.
In this embodiment, when the conditions such as discontinuous operation occur, the reaction chamber 12 is in a cold chamber state, the chamber wall temperature detector measures the temperature in the reaction chamber 12 in real time, the measured temperature is sent to the control module, the control module compares the measured temperature with a set threshold value, and when the temperature obtained by the chamber wall temperature detector is less than the set preheating threshold value, the control module sends a control signal to the preheating lamp source 11 and the heating coil to turn on the preheating lamp source 11 and the heating coil for preheating, and at this time, the preheating lamp source 11 is preheated by low-power operation.
In the preheating process, the wafer temperature detector 15 and the cavity wall temperature detector are in a real-time measuring state to obtain the temperatures of the edge areas of the wafer 14 and the bearing table 17, the measured temperatures are sent to the control module, the control module compares the temperature of the wafer 14 with the temperature of the edge of the bearing table 17, and when the temperature obtained by the cavity wall temperature detector is lower than the temperature obtained by the wafer temperature detector 15, the control module controls the heating coil to increase the power so as to realize the thermal compensation of the edge area of the bearing table 17.
When the temperature acquired by the cavity wall temperature measurer is greater than the preheating threshold value, the preheating is finished, the main annealing stage is started, and the control module sends control signals to the preheating lamp source 11 and the heating coil to control the preheating lamp source and the heating coil to increase power for annealing.
In the annealing process, the wafer temperature detector 15 and the cavity wall temperature detector obtain the temperatures of the edge areas of the wafer 14 and the bearing table 17, the measured temperatures are sent to the control module, the control module compares the temperature of the wafer 14 with the temperature of the edge of the bearing table 17, and when the temperature obtained by the cavity wall temperature detector is lower than the temperature obtained by the wafer temperature detector 15, the control module controls the heating coil to increase the power so as to realize the thermal compensation of the edge area of the bearing table 17.
In summary, in the rapid thermal annealing apparatus provided by the present invention, the preheating lamp source 11 is disposed at the top of the reaction chamber 12 to preheat the reaction chamber 12; the temperatures of different positions of the wafer 14 are obtained through the wafer temperature detector 15, the temperature difference between the central position of the wafer 14 and the edge position of the bearing table 15 can be accurately obtained, the cavity wall temperature detector is arranged on the cavity wall of the reaction chamber 12, the temperature of the edge of the bearing table 17 can be accurately obtained, the temperatures obtained by the wafer temperature detector 15 and the cavity wall temperature detector are compared through the control module, and the switch or the power of the preheating lamp source 11 and the heating coil is controlled; the heating coil is embedded in the cavity wall of the reaction chamber 12, the heating coil performs thermal compensation on the area which is not positioned under the preheating lamp source 11, and the power of the heating coil is adjusted to adjust the compensation temperature, so that the area which is positioned under the preheating lamp source 11 and is not positioned under the preheating lamp source 11 can be fully preheated, the temperature balance of the reaction chamber is realized, and the uniformity of the operation environment is improved; and the first effect caused by insufficient preheating is reduced, the problem of poor uniformity of the wafer 14 caused by uneven heating is solved, and the product quality problems such as warping and deformation of the wafer 14 are effectively reduced.
The above description is only a preferred embodiment of the present invention, and does not limit the present invention in any way. It will be understood by those skilled in the art that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (10)
1. A rapid thermal annealing apparatus, comprising:
a reaction chamber;
the preheating lamp source is arranged at the top of the reaction chamber;
the wafer temperature detector is arranged in the reaction chamber to measure the temperature of the wafer in real time;
the cavity wall temperature detector is arranged in the reaction chamber to measure the temperature of the reaction chamber in real time;
the heating coil is arranged on the wall of the reaction chamber;
and the control module is arranged on the cavity wall of the reaction chamber and used for controlling the switch and the power of the preheating lamp source and the heating coil according to the temperature acquired by the cavity wall temperature detector and/or the wafer temperature detector.
2. The express thermal annealing device of claim 1, wherein the control module turns on the preheat lamp source and the heating coil for preheating when the temperature obtained by the chamber wall temperature detector is less than a preheat threshold; when the temperature acquired by the cavity wall temperature detector is less than a preheating threshold value and the temperature acquired by the wafer temperature detector, the control module controls the heating coil to increase power for thermal compensation; when the temperature acquired by the cavity wall temperature measurer is greater than a preheating threshold value, the control module controls the preheating lamp source and the heating coil to increase power for annealing; and when the temperature acquired by the cavity wall temperature detector is greater than a preheating threshold value and less than the temperature acquired by the wafer temperature detector, the control module controls the heating coil to increase power for thermal compensation.
3. The rapid thermal annealing apparatus according to claim 1, wherein the heating coil is an electromagnetic induction heating coil embedded in a wall of the reaction chamber.
4. The rapid thermal annealing apparatus of claim 3, wherein the electromagnetic induction heating coil is disposed around a cavity of the reaction chamber.
5. The rapid thermal annealing apparatus according to claim 1, wherein the chamber wall temperature detector comprises a plurality of radiation temperature detectors disposed on the chamber wall of the reaction chamber.
6. The rapid thermal annealing apparatus of claim 5, wherein the radiation thermometers are evenly distributed circumferentially along the chamber wall of the reaction chamber.
7. The rapid thermal annealing apparatus according to claim 1, further comprising a susceptor for supporting a wafer, wherein the susceptor is disposed in the reaction chamber, and the wafer temperature detector is disposed below the susceptor.
8. The rapid thermal annealing apparatus according to claim 7, wherein the number of the wafer thermometers is several, and several wafer thermometers are distributed along a radial direction of the susceptor.
9. The rapid thermal annealing apparatus according to claim 1, further comprising a reflector disposed in the reaction chamber, wherein the wafer temperature detector is embedded in the reflector.
10. The rapid thermal annealing apparatus according to claim 1, wherein the preheating lamp source comprises a plurality of heating bulbs.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010884966.1A CN111816594B (en) | 2020-08-28 | 2020-08-28 | Rapid thermal annealing equipment |
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| CN202010884966.1A CN111816594B (en) | 2020-08-28 | 2020-08-28 | Rapid thermal annealing equipment |
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| CN111816594B CN111816594B (en) | 2022-12-02 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112947634A (en) * | 2021-02-01 | 2021-06-11 | 泉芯集成电路制造(济南)有限公司 | Hot plate temperature adjusting method and hot plate device |
| CN113670448A (en) * | 2021-08-16 | 2021-11-19 | 季华实验室 | Reaction chamber temperature measuring system, method and device and temperature adjusting method |
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| Publication number | Publication date |
|---|---|
| CN111816594B (en) | 2022-12-02 |
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