CN109385623B - Film deposition method and deposited film - Google Patents
Film deposition method and deposited film Download PDFInfo
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- CN109385623B CN109385623B CN201710662220.4A CN201710662220A CN109385623B CN 109385623 B CN109385623 B CN 109385623B CN 201710662220 A CN201710662220 A CN 201710662220A CN 109385623 B CN109385623 B CN 109385623B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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Abstract
The invention provides a film deposition method, which comprises the following steps: loading a wafer boat carrying wafers into a low-pressure chemical vapor deposition furnace; preheating a wafer, carrying out first temperature rise operation on the low-pressure chemical vapor deposition furnace, and reaching a first reaction temperature under the preheating temperature rise slope; forming a film on the wafer, wherein the forming comprises introducing reaction gas into a low-pressure chemical vapor deposition furnace, carrying out chemical reaction, and depositing the reaction gas on the surface of the substrate of the wafer, and during the deposition process, carrying out L/F reaction operation of which the temperature in the low-pressure chemical vapor deposition furnace is at least one section under L/F slope so as to ensure that the film has the same deposition thickness in the central area and the peripheral area on the wafer; and cooling the wafer under the cooling gradient. The invention can change the film thickness difference of the wafer from the central area to the peripheral area by controlling the gradual rising/cooling slope in the deposition process, and improve the flatness and uniformity of the surface of the wafer, thereby forming a deposited film with good flatness and uniformity.
Description
Technical Field
The invention belongs to the field of integrated circuit manufacturing, and relates to a film deposition method and a deposited film.
Background
The basic principle of LPCVD (Low Pressure Chemical Vapor Deposition) is to activate one or more gaseous substances with heat energy under a relatively Low Pressure to cause thermal decomposition or Chemical reaction, and deposit the substances on the surface of the substrate to form a desired thin film. Different materials are deposited using different gases, and the deposition process is performed in a low pressure chemical vapor deposition furnace (LPCVD).
FIG. 1 is a schematic view of a Low Pressure Chemical Vapor Deposition (LPCVD) furnace used in the prior art, hereinafter referred to as "furnace tube". The Wafer boat 20 carrying wafers (wafers) 30 is placed in a furnace tube, around which a heating device 10 is installed, and reaction gas enters from 40. In the prior art, the furnace is kept at a constant temperature during deposition, and fig. 2 shows the time-temperature line of the furnace, and gas deposition occurs in a time period T1. Since the gas is introduced from the periphery 32 of the wafer 3, if the reaction gas deposited on the wafer 30 is less and less from the periphery to the center under the constant temperature condition, a bowl-shaped thin film 50 having a low center and a high periphery is formed on the surface of the substrate 31 of the wafer 30, as shown in fig. 3, which increases the workload and difficulty of the subsequent Etching (EH) and exposure (PH) processes. As shown in fig. 4, in the case where the surface of the substrate 31 'has grooves, the deposition of the bowl-shaped thin film 50' on the surface of the substrate 31 'is worse because more reaction gas is required due to the larger surface area of the substrate 31'.
Disclosure of Invention
Accordingly, the present invention is directed to a thin film deposition method and a deposited thin film, which at least solve the above problems in the prior art.
As an aspect of the present invention, there is provided a thin film deposition method including:
loading a wafer boat carrying wafers into a low pressure chemical vapor deposition furnace (LPCVD);
preheating the wafer, and carrying out first temperature rise operation on the low-pressure chemical vapor deposition furnace to reach a first reaction temperature under a preheating temperature rise slope;
forming a thin film on the wafer, comprising: introducing reaction gas into the low-pressure chemical vapor deposition furnace, carrying out chemical reaction, and depositing on the substrate surface of the wafer, and during the deposition process, carrying out L/F reaction operation of at least one section under L/F slope on the temperature in the low-pressure chemical vapor deposition furnace so as to enable the central area and the peripheral area of the film on the wafer to have consistent deposition thickness; and
cooling the wafer at a cooling ramp rate,
wherein the upper and lower limits of the ramp-up/ramp-down slope are controlled so that the ramp-up/ramp-down reaction operation is performed between the highest limit temperature and the lowest limit temperature of the thin film deposition, and the positive number of the ramp-up/ramp-down slope is smaller than the positive number of the preheating ramp-up slope.
Preferably, the ramp-up/ramp-down slope is 1-10 ℃/min, inclusive.
Preferably, the positive number of the gradual rising/cooling slope is smaller than the positive number of the cooling slope, and the cooling slope is 1-10 ℃/min, including the end point value.
Preferably, the slow heating/cooling reaction operation is a multi-stage operation, the low-pressure chemical vapor deposition furnace is slowly heated to a second reaction temperature between upper and lower limit points of the slow heating/cooling slope, and then slowly heated to the second reaction temperature after being cooled.
Preferably, the second reaction temperature is a maximum limiting temperature for thin film deposition.
Preferably, the gradual heating/cooling reaction operation is a multi-stage operation, cooling is performed on the low-pressure chemical vapor deposition furnace between the upper limit point and the lower limit point of the gradual heating/cooling slope to a third reaction temperature, and then cooling is performed to the third reaction temperature after the temperature is raised.
Preferably, the third reaction temperature is a minimum limiting temperature for thin film deposition.
Preferably, before performing the film deposition in the mass production mode, a wafer control wafer is used for performing the film deposition, a plurality of slow heating/cooling slopes and slow heating/cooling reaction operations are preset, and then the film thickness difference between the edge and the center of the wafer corresponding to the wafer control wafer is measured, so as to select or calculate the optimized slow heating/cooling slope and slow heating/cooling reaction operations.
Preferably, the substrate surface of the wafer is smooth planar or has grooves.
As another aspect of the present invention, there is also provided a deposited film formed on a wafer, the film having a uniform deposition thickness in a central region and a peripheral region on the wafer, the film being formed in a Low Pressure Chemical Vapor Deposition (LPCVD) furnace under at least one ramp-up/ramp-down reaction operation with a ramp-up/ramp-down slope.
By adopting the technical scheme, the thickness difference of the film from the central area to the peripheral area of the wafer can be changed by controlling the gradual rising/cooling slope in the deposition process, and the flatness and the uniformity of the surface of the wafer are improved, so that the deposited film with good flatness and uniformity is formed.
The foregoing summary is provided for the purpose of description only and is not intended to be limiting in any way. In addition to the illustrative aspects, embodiments, and features described above, further aspects, embodiments, and features of the present invention will be readily apparent by reference to the drawings and following detailed description.
Drawings
In the drawings, like reference numerals refer to the same or similar parts or elements throughout the several views unless otherwise specified. The figures are not necessarily to scale. It is appreciated that these drawings depict only some embodiments in accordance with the disclosure and are therefore not to be considered limiting of its scope.
FIG. 1 is a schematic view of a furnace used in an LPCVD process.
FIG. 2 is a time-temperature plot of a furnace tube of the prior art.
FIG. 3 is a schematic diagram of a prior art deposited film (wafer substrate surface is smooth and flat).
FIG. 4 is a diagram illustrating a prior art deposited film (wafer substrate having a recess on its surface).
FIG. 5 is a time-temperature curve of a furnace tube according to the first embodiment.
FIG. 6 is a schematic diagram of a film deposited according to the first embodiment.
FIG. 7 is a time-temperature curve of a furnace with temperature limitations in accordance with the first embodiment.
FIG. 8 is a schematic diagram of a thin film deposited according to the first embodiment (with a groove on the surface of the substrate).
FIG. 9 is a schematic view of a mountain shaped membrane according to a second embodiment.
FIG. 10 is a time-temperature plot for the furnace tube of example two.
FIG. 11 is a schematic view of a film deposited in the second embodiment.
FIG. 12 is a time-temperature curve of the furnace tube with temperature limitation in example two.
FIG. 13 is a schematic view of a thin film deposited in the second embodiment (with grooves on the surface of the substrate)
Reference numerals
10 heating device 20 wafer boat 30 wafer 40 gas inlet
50 thin film 31 substrate 32 wafer periphery
31 'substrate 50' film
110 preheating temperature rising slope 111 slow cooling slope 112 cooling temperature falling slope
130 wafer 131 substrate 150 film
130 ' wafer 131 ' substrate 150 ' film
230 wafer 231 substrates 250A, 250B films
230 ' wafer 231 ' substrate 250 ' film
210 preheating temperature rising slope 211 slow cooling temperature rising slope 212 cooling temperature falling slope
Detailed Description
In the following, only certain exemplary embodiments are briefly described. As those skilled in the art will recognize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention. Accordingly, the drawings and description are to be regarded as illustrative in nature, and not as restrictive.
The film deposition method of the following embodiments is based on LPCVD process, and the applied furnace tube is a low-pressure chemical vapor deposition furnace of the prior art, hereinafter referred to as "furnace tube", as shown in fig. 1, the heating device 10 is arranged around the furnace tube, and the reaction gas enters from 40.
Example one
As shown in fig. 5, the thin film deposition method of the present embodiment is divided into three periods:
time period T0: loading the wafer boat 20 carrying the wafer 130 into the furnace tube; pre-heating the wafer 130: the heating device 10 is controlled to perform a first temperature-raising operation on the furnace tube, and the temperature in the furnace tube reaches a first reaction temperature of 520 ℃ under the preheating temperature-raising slope 110.
Time period T1: forming a film 150 on the surface of the substrate 131 of the wafer 130: reaction gas is introduced into the furnace, and a chemical reaction is performed to deposit on the surface of the substrate 131 of the wafer 130. In this time period, the heating apparatus 10 is controlled to operate the furnace tube with a slow cooling slope 111, the positive number of the slow cooling slope 111 is smaller than the preheating slope 110, and the slow cooling slope 111 of the present embodiment is 2 ℃/min.
Time period T2: the wafer 130 is cooled down under the cool down ramp 112.
It should be noted that the slow cooling slope 111 should be controlled between an upper limit and a lower limit, preferably between 1 ℃ and 10 ℃, so that the slow cooling reaction operation in the time period T1 is performed between the maximum limit temperature and the minimum limit temperature of the film deposition, thereby ensuring that the film can be deposited within the temperature range required by the process.
As shown in fig. 6, which is a schematic view of a thin film 150 formed on the surface of the substrate 131 of the wafer 130 after the deposition process is finished, the thin film 150 has a uniform deposition thickness in the central region and the peripheral region of the wafer 130.
Preferably, the slow cooling slope 111 can be 1-10 ℃/min, and the cooling slope 112 can be 1-10 ℃/min, but the positive number of the slow cooling slope is less than that of the cooling slope.
Preferably, in a mass production mode, before film deposition, a wafer control wafer may be used to perform a film deposition experiment, a plurality of slow cooling slopes are preset, a plurality of groups of slow cooling reaction operations are performed, and then a film thickness difference between a center and an edge of a wafer corresponding to the wafer control wafer under each slow cooling slope is measured, so as to select or calculate a slow cooling slope used in a time period T1.
It should be noted that the LPCVD process limits the reaction temperature or causes the furnace tube to slowly cool at a constant speed in the time period T1, so that it is difficult to achieve a flat film, and a multi-stage slow cooling reaction operation can be performed in the time period T1: is carried out on the furnace tube to reduce the temperature to 500 ℃ at the upper limit point of the slow cooling slope of 10 ℃/min, then the temperature is reduced to 520 ℃ at the first reaction temperature, then the temperature is reduced to 500 ℃ at ℃ at the slow cooling slope of 10 ℃/min, and the 500 ℃ at the third reaction temperature is the lowest limit temperature of the film deposition, as shown in figure 7.
As shown in fig. 8, the method of the present embodiment is also applicable to a wafer 130 'having a groove on the surface of the substrate 131', and the first reaction temperature and the slow cooling slope of the time period T1 are reset according to actual conditions, so as to form a thin film 150 'having a uniform deposition thickness in the central region and the peripheral region of the wafer 130'.
In the period of T1, the temperature of the furnace tube is gradually reduced, the periphery of the wafer is closer to the heating device of the furnace tube, the temperature of the wafer is firstly reduced, the center of the wafer is farther from the heating device, and the reaction to the temperature reduction is slower, therefore, the heat received by the wafer is gradually increased from the periphery to the center, and the deposition rate of the gas (namely the rate of film formation) is gradually increased from the periphery to the center, thereby avoiding the phenomenon of depositing a bowl-shaped film due to the higher concentration of the reaction gas at the periphery of the wafer (due to the reaction gas entering from the periphery of the wafer), and improving the flatness of the film on the surface of the wafer.
Example two
As shown in FIG. 9, before the wafer 230 enters the furnace, a mountain-shaped film 250A is deposited on the surface of the substrate 231.
As shown in fig. 10, the thin film deposition method of the present embodiment is divided into three periods:
time period T0: loading the wafer boat 20 carrying the wafer 230 into the furnace; pre-heating the wafer 230: the heating device 10 is controlled to perform a first temperature-raising operation on the furnace tube, and the temperature in the furnace tube reaches a first reaction temperature of 520 ℃ under a preheating temperature-raising slope of 200.
Time period T1: forming a film 250B on the substrate 231 surface of the wafer 230: the reaction gas is introduced into the furnace, and the reaction gas is chemically reacted and deposited on the surface of the substrate 231 of the wafer 230. In this time period, the heating apparatus 10 is controlled so that the furnace tube is operated at the slow temperature rise slope 211, the positive number of the slow temperature rise slope 211 is smaller than the preheating temperature rise slope 210, and the slow temperature rise slope 211 of the present embodiment is 2 ℃/min.
Time period T2: the wafer 230 is cooled under the cool down ramp 212.
It should be noted that the ramp-up slope 211 should be controlled between an upper limit and a lower limit, preferably between 1 ℃ and 10 ℃, so that the ramp-up reaction operation in the time period T1 is performed between the maximum limit temperature and the minimum limit temperature for the deposition of the thin film, thereby ensuring that the thin film can be deposited within the temperature range required by the process.
As shown in fig. 11, which is a schematic view of a thin film 250B formed on the surface of the substrate 231 of the wafer 230 after the deposition process is finished, the thin film 250B has a uniform deposition thickness in the central region and the peripheral region of the wafer 230.
Preferably, the gradual temperature rise slope 211 can be 1-10 ℃/min, and the cooling slope 212 can be 1-10 ℃/min, but the positive number of the gradual temperature rise slope is ensured to be smaller than that of the cooling slope.
Preferably, in a mass production mode, before film deposition, a wafer control wafer may be used to perform a film deposition experiment, a plurality of slow temperature rise slopes are preset, a plurality of groups of slow temperature rise reaction operations are performed, and then a film thickness difference between a center and an edge of a wafer corresponding to the wafer control wafer under each slow temperature rise slope is measured, so as to select or calculate a slow temperature rise slope used in a time period T1.
It should be noted that the LPCVD process limits the reaction temperature or causes the furnace tube to slowly increase the temperature at a constant speed in the time period T1, which makes it difficult to achieve a flat film, and the LPCVD process may perform a multi-stage slow temperature increase reaction operation in the time period T1: is carried out on the furnace tube at the upper limit point of the slow heating slope of 10 ℃/min to raise the temperature to the second reaction temperature of 540 ℃, then the temperature is lowered to the first reaction temperature of 520 ℃, then the temperature is raised to the second reaction temperature of 540 ℃ at the slow heating slope of 10 ℃/min , and the second reaction temperature of 540 ℃ is the highest limit temperature of the film deposition, as shown in figure 12.
As shown in fig. 13, the method of the present embodiment is also applicable to a wafer 230 'having a groove on the surface of the substrate 231', and the first reaction temperature and the ramp-up slope of the time period T1 are required to be reset according to actual conditions, so as to form a thin film 250 'having a uniform deposition thickness in the central region and the peripheral region of the wafer 230'.
In the period T1, the temperature of the furnace is gradually increased, the periphery of the wafer is closer to the furnace heating device, the temperature is increased first, and the center of the wafer is farther from the heating device and reacts slower to the temperature increase, so that the heat received by the wafer is gradually decreased from the periphery to the center, and the deposition rate of the gas (i.e., the film formation rate) is gradually decreased from the periphery to the center, thereby compensating the previous mountain-line film and depositing the surface of the wafer as a uniform and flat film.
EXAMPLE III
Since the reaction gas enters from the bottom, the degree of forming the bowl-shaped thin film on the substrate surface of the wafer located at different positions (top/middle/bottom) in the furnace tube may be different, and the bottom of the wafer may be more serious, so that different ramp-up/ramp-down slopes can be set in different regions of the furnace tube, and the thin film uniformity of the wafers in the same batch is consistent.
As shown in FIG. 1, the furnace tube is divided into five regions from Z1 to Z5 from top to bottom.
Before the film deposition, the slow cooling slopes for two T1 time periods (gas reaction and deposition process) are set, and the corresponding film thickness difference between the edge and the center of the wafer is measured, as shown in tables 1 and 2:
TABLE 1
TABLE 2
According to tables 1 and 2, it can be calculated that the slow cooling slope of Table 3 should be selected in different regions of the furnace tube during the time T1.
TABLE 3
The thin film deposition method of the present embodiment is performed according to the above slow cooling slope, and is divided into three time periods:
time period T0: loading a wafer boat 20 carrying wafers into the furnace tube; preheating a wafer: controlling the heating device 10 to perform a first temperature-raising operation on the furnace tube, and respectively bringing the regions Z1-Z5 of the furnace tube to respective first reaction temperatures: the Z1 region was 537 deg.C, the Z2 region was 533 deg.C, the Z3 region was 530 deg.C, the Z4 region was 526 deg.C, and the Z5 region was 521 deg.C.
Time period T1: forming a thin film on the substrate surface of the wafer: introducing reaction gas into the furnace tube, carrying out chemical reaction, depositing on the surface of the substrate of the wafer to form a film, and controlling the heating device 10 to cool the Z1-Z5 regions of the furnace tube at slow cooling slopes of 1 ℃/min, 1.25 ℃/min, 1.5 ℃/min, 2.33 ℃/min and 3 ℃/min respectively in the time period.
Time period T2: and cooling the wafer under the cooling gradient.
The method of the embodiment is suitable for wafers with flat or grooved substrate surfaces.
As can be seen from Table 3, by setting different cooling rates for different regions of the furnace tube, the flatness of the wafers in different regions of the furnace tube can be improved, and the uniformity of the wafers in the same batch can be consistent.
The above technical solution is adopted in the present invention, and the ramp-up/ramp-down slope is controlled during the deposition process, so that the thickness difference of the thin film from the central region to the peripheral region of the wafer can be changed, and the flatness and uniformity of the surface of the wafer can be improved, thereby forming a deposited thin film with good flatness and uniformity.
The above description is only for the specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive various changes or substitutions within the technical scope of the present invention, and these should be covered by the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (9)
1. A thin film deposition method comprising:
carrying out preset film deposition by adopting a wafer control wafer, presetting a plurality of preset slow rising/cooling slopes and preset slow rising/cooling reaction operations, then measuring the film thickness difference between the edge and the center of a wafer corresponding to the wafer control wafer, and selecting or calculating the optimized slow rising/cooling slope and the slow rising/cooling reaction operations according to the film thickness difference;
loading a wafer boat carrying wafers into a low-pressure chemical vapor deposition furnace;
preheating the wafer, and carrying out first temperature rise operation on the low-pressure chemical vapor deposition furnace to reach a first reaction temperature under a preheating temperature rise slope;
forming a thin film on the wafer, comprising: introducing reaction gas into the low-pressure chemical vapor deposition furnace, carrying out chemical reaction, and depositing the reaction gas on the surface of the substrate of the wafer, and carrying out at least one section of slow-rising/cooling reaction operation under the slow-rising/cooling slope on the temperature in the low-pressure chemical vapor deposition furnace during the deposition process so as to ensure that the central area and the peripheral area of the film on the wafer have the same deposition thickness; and
cooling the wafer at a cooling ramp rate,
wherein the upper and lower limits of the ramp-up/ramp-down slope are controlled so that the ramp-up/ramp-down reaction operation is performed between the highest limit temperature and the lowest limit temperature of the thin film deposition, and the positive number of the ramp-up/ramp-down slope is smaller than the positive number of the preheating ramp-up slope.
2. The thin film deposition method of claim 1, wherein the ramp-up/ramp-down slope is between 1 and 10 ℃/min, inclusive.
3. The thin film deposition method of claim 1, wherein a positive number of the ramp-up/ramp-down slope is less than a positive number of the cool-down slope, and the cool-down slope is 1-10 ℃/min inclusive.
4. The method of claim 1, wherein the ramp-up/ramp-down reaction is a multi-stage reaction, and wherein the low pressure chemical vapor deposition furnace is ramped up to a second reaction temperature between upper and lower limits of the ramp-up/ramp-down slope, and then ramped up to the second reaction temperature after being ramped down.
5. The thin film deposition method of claim 4, wherein the second reaction temperature is a maximum limiting temperature of thin film deposition.
6. The method of claim 1, wherein the ramp-up/ramp-down reaction is a multi-stage reaction, and wherein the low pressure chemical vapor deposition furnace is ramped down to a third reaction temperature between upper and lower limits of the ramp-up/ramp-down slope, and then ramped down to the third reaction temperature after the temperature is raised.
7. The thin film deposition method of claim 6, wherein the third reaction temperature is a minimum limiting temperature for thin film deposition.
8. The thin film deposition method of claim 1, wherein the substrate surface of the wafer is smooth planar or has grooves.
9. A deposited film formed on a wafer by the thin film deposition method according to any one of claims 1 to 8, the film having a uniform deposition thickness in a central region and a peripheral region on the wafer, the film being formed in a low pressure chemical vapor deposition furnace under at least one stage of ramp-up/ramp-down reaction operation under a ramp-up/ramp-down slope.
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| CN111309070A (en) * | 2019-12-27 | 2020-06-19 | 清华大学无锡应用技术研究院 | Method for uniformly controlling temperature of chemical vapor deposition equipment |
| TWI750749B (en) * | 2020-07-28 | 2021-12-21 | 華邦電子股份有限公司 | Chemical vapor deposition process and methof of forming film |
| CN111763929A (en) * | 2020-08-27 | 2020-10-13 | 泉芯集成电路制造(济南)有限公司 | Method, device and equipment for preparing chemical vapor deposition layer with controlled surface morphology |
| CN112941489A (en) * | 2021-01-27 | 2021-06-11 | 长鑫存储技术有限公司 | Thin film deposition method and thin film deposition apparatus |
| CN115478260A (en) * | 2021-05-31 | 2022-12-16 | 中芯国际集成电路制造(上海)有限公司 | Method for depositing film by low pressure chemical vapor deposition process |
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