CN109385623A - A kind of membrane deposition method and deposition film - Google Patents
A kind of membrane deposition method and deposition film Download PDFInfo
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- CN109385623A CN109385623A CN201710662220.4A CN201710662220A CN109385623A CN 109385623 A CN109385623 A CN 109385623A CN 201710662220 A CN201710662220 A CN 201710662220A CN 109385623 A CN109385623 A CN 109385623A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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Abstract
The present invention provides a kind of membrane deposition methods, comprising: is loaded into the cassette to low-pressure chemical vapor deposition furnace for carrying wafer；Heating wafer in advance carries out the first heating operation to low-pressure chemical vapor deposition furnace, the first reaction temperature is reached under pre-heating temperature elevation slope；Film is formed on wafer, it include the substrate surface for importing reaction gas in low-pressure chemical vapor deposition furnace, being chemically reacted and being deposited on wafer, in deposition process, at least one section of the slow lifting/lowering temperature operation under slow lifting/lowering temperature slope is carried out to the temperature in low-pressure chemical vapor deposition furnace, so that middle section of the film on wafer and neighboring area have consistent deposition thickness；And the cool wafers under the slope that cools.For the present invention by delaying lifting/lowering temperature slope in control deposition process, changeable film thickness of the wafer from middle section to neighboring area is poor, improves the flatness and the uniformity of crystal column surface, to form the deposition film with good flatness and the uniformity.
Description
Technical field
The invention belongs to IC manufacturing field, it is related to a kind of membrane deposition method and deposition film.
Background technique
LPCVD (Low Pressure Chemical Vapor Deposition, Low Pressure Chemical Vapor Deposition) technique
Basic principle be at low pressures, to activate one or several kinds of gaseous materials with thermal energy, bring it about thermal decomposition or chemistry
Reaction, is deposited on substrate surface and forms required film.Different material deposits use different gas, and deposition process is in low pressure
It is executed in chemical vapor deposition stove (LPCVD).
Fig. 1 show used low-pressure chemical vapor deposition furnace (LPCVD) schematic diagram in the prior art, hereinafter referred to as
" boiler tube ".The cassette 20 of carrying wafer (Wafer) 30 is placed in boiler tube, and boiler tube surrounding is heating device 10, and reaction gas is from 40
Place enters.In the prior art, boiler tube will keep constant temperature during the deposition process, and Fig. 2 shows the time-temperature line of boiler tube, gases
Deposition occurred in the T1 period.Since gas is entered from the surrounding 32 of wafer 3, if under constant temperature conditions, in wafer
The reaction gas deposited on 30 is in trend less and less from four circumferential centers, therefore be will form on 31 surface of the substrate of wafer 30
The high bowl-type film 50 of intermediate low surrounding, as shown in figure 3, this etches (EH) after will increase and exposes the workload of (PH) technique
And difficulty.Being illustrated in figure 4 31 ' surface of substrate has the case where groove, required anti-since 31 ' surface area of substrate is bigger
Answer gas more, therefore can be even worse the case where 31 ' surface of substrate deposits bowl-type film 50 '.
Summary of the invention
In view of this, the present invention provides a kind of membrane deposition method and deposition film, it is in the prior art at least to solve
The above technical problem.
As one aspect of the present invention, a kind of membrane deposition method is provided, comprising:
It is loaded into cassette to the low-pressure chemical vapor deposition furnace (LPCVD) for carrying wafer；
The wafer is heated in advance, the first heating operation is carried out to the low-pressure chemical vapor deposition furnace, in pre-heating temperature elevation
Reach the first reaction temperature under slope；
Film is formed on the wafer, includes: importing reaction gas in the low-pressure chemical vapor deposition furnace, carry out
The substrate surface for chemically reacting and being deposited on the wafer, in deposition process, in the low-pressure chemical vapor deposition furnace
Temperature carries out at least one section of the slow lifting/lowering temperature operation under slow lifting/lowering temperature slope, so that the film is on the wafer
Middle section and neighboring area have consistent deposition thickness；And
The cooling wafer under the slope that cools,
Wherein the control of point of accumulation up and down of the slow lifting/lowering temperature slope keeps the slow lifting/lowering temperature operation heavy in film
It is carried out between long-pending maximum limit temperature and minimum limit temperature, and the positive number of the slow lifting/lowering temperature slope is less than described pre-
The positive number of heat heating slope.
Preferably, the slow lifting/lowering temperature slope is 1~10 DEG C/minute of kind, including endpoint value.
Preferably, the positive number of the slow lifting/lowering temperature slope is less than the positive number of the slope that cools, described to cool
Slope is 1~10 DEG C/minute of kind, including endpoint value.
Preferably, the slow lifting/lowering temperature operation is multi-stage operation, in the point of accumulation up and down of the slow lifting/lowering temperature slope
Between to the low-pressure chemical vapor deposition furnace carry out it is slow be warming up to the second reaction temperature, delay again after then cooling down and be warming up to second
Reaction temperature.
Preferably, second reaction temperature is the maximum limit temperature of film deposition.
Preferably, the slow lifting/lowering temperature operation is multi-stage operation, in the point of accumulation up and down of the slow lifting/lowering temperature slope
Between to the low-pressure chemical vapor deposition furnace carry out it is slow be cooled to third reaction temperature, delay again after then heating up and be cooled to third
Reaction temperature.
Preferably, the third reaction temperature is the minimum limit temperature of film deposition.
Preferably, before carrying out volume production mode depositing thin film, film deposition is first carried out using wafer control slice, if default
Dry slow lifting/lowering temperature slope and slow lifting/lowering temperature operation, measure thereafter the corresponding crystal round fringes of the wafer control slice and center
Film thickness it is poor, select or extrapolate according to this optimization slow lifting/lowering temperature slope and slow lifting/lowering temperature operation.
Preferably, the substrate surface of wafer for smooth flat or has groove.
As another point of aspect of the invention, a kind of deposition film is also provided, is formed on wafer, the film is described
Middle section and neighboring area on wafer have consistent deposition thickness, and the film is in low-pressure chemical vapor deposition furnace
(LPCVD) it is formed in and under slow lifting/lowering temperature slope under at least one section of slow lifting/lowering temperature operation.
By adopting the above technical scheme, by delaying lifting/lowering temperature slope in control deposition process, wafer can be changed therefrom in the present invention
It entreats the film thickness of region to neighboring area poor, improves the flatness and the uniformity of crystal column surface, so that being formed has good put down
The deposition film of smooth degree and the uniformity.
Above-mentioned general introduction is merely to illustrate that the purpose of book, it is not intended to be limited in any way.Except foregoing description
Schematical aspect, except embodiment and feature, by reference to attached drawing and the following detailed description, the present invention is further
Aspect, embodiment and feature, which will be, to be readily apparent that.
Detailed description of the invention
In the accompanying drawings, unless specified otherwise herein, otherwise indicate the same or similar through the identical appended drawing reference of multiple attached drawings
Component or element.What these attached drawings were not necessarily to scale.It should be understood that these attached drawings depict only according to the present invention
Disclosed some embodiments, and should not serve to limit the scope of the present invention.
Fig. 1 is boiler tube schematic diagram used in LPCVD technique.
Fig. 2 is the time-temperature line of boiler tube in the prior art.
Fig. 3 is the film schematic diagram deposited in the prior art (wafer substrate surface is smooth flat).
Fig. 4 is the film schematic diagram deposited in the prior art (wafer substrate surface has groove).
Fig. 5 is the time-temperature line of boiler tube in embodiment one.
Fig. 6 is the film schematic diagram deposited in embodiment one.
Fig. 7 is the time-temperature line of boiler tube when having temperature limiting in embodiment one.
Fig. 8 is the film schematic diagram deposited in embodiment one (substrate surface is fluted).
Fig. 9 is chevron film schematic diagram in embodiment two.
Figure 10 is the time-temperature line of boiler tube in embodiment two.
Figure 11 is the film schematic diagram deposited in embodiment two.
Figure 12 is the time-temperature line of boiler tube when having temperature limiting in embodiment two.
Figure 13 is the film schematic diagram deposited in embodiment two (substrate surface is fluted)
Appended drawing reference
10 heating device, 20 cassette, 30 wafer, 40 gas enters place
50 film, 31 substrate, 32 wafer surrounding
31 ' substrate, 50 ' film
110 pre-heating temperature elevation slopes 111 delay descending temperature ramp back down 112 and cool slope
130 wafer, 131 substrate, 150 film
130 ' wafer, 131 ' substrate, 150 ' film
230 wafer, 231 substrate 250A, 250B film
230 ' wafer, 231 ' substrate, 250 ' film
210 pre-heating temperature elevation slopes 211 delay descending temperature ramp back down 212 and cool slope
Specific embodiment
Hereinafter, certain exemplary embodiments are simply just described.As one skilled in the art will recognize that
Like that, without departing from the spirit or scope of the present invention, described embodiment can be modified by various different modes.
Therefore, attached drawing and description are considered essentially illustrative rather than restrictive.
The membrane deposition method of following embodiment is based on LPCVD technique, and applied boiler tube is the low pressure of the prior art
Chemical vapor deposition stove, hereinafter referred to as " boiler tube ", as shown in Figure 1, boiler tube surrounding be heating device 10, reaction gas from 40 into
Enter.
Embodiment one
As shown in figure 5, the membrane deposition method of the present embodiment is divided into three periods:
The T0 period: it is loaded into cassette 20 to the boiler tube for carrying wafer 130；Wafer 130 is heated in advance: control heating dress
It sets 10 pairs of boiler tubes and carries out the first heating operation, make to reach 520 DEG C of the first reaction temperature in boiler tube under pre-heating temperature elevation slope 110.
The T1 period: film 150 is formed in 131 surface of substrate of wafer 130: importing reaction gas in boiler tube, carry out
Chemically react and be deposited on 131 surface of substrate of wafer 130.Within the time period, control heating device 10 makes boiler tube in slow drop
Warm slope 111 is lower to carry out, and the positive number for delaying descending temperature ramp back down 111 is less than pre-heating temperature elevation slope 110, the slow descending temperature ramp back down of the present embodiment
111 be 2 DEG C/min.
The T2 period: the cool wafers 130 under the slope 112 that cools.
It should be noted that slow descending temperature ramp back down 111 should control between upper and lower point of accumulation, it is preferable that for 1 DEG C and 10 DEG C it
Between, it operates the slow hypothermic response of T1 period and is carried out between the maximum limit temperature and minimum limit temperature that film deposits,
To guarantee that film can be deposited within the temperature range of technique requires.
After being illustrated in figure 6 deposition process, the signal of film 150 is formed by 131 surface of substrate of wafer 130
Figure, film 150 have consistent deposition thickness in the middle section of wafer 130 and neighboring area.
Preferably, delay descending temperature ramp back down 111 can be 1~10 DEG C/min, cool slope 112 can for 1~10 DEG C/
Minute, but to guarantee that the positive number of slow descending temperature ramp back down is less than the positive number for the slope that cools.
Preferably, in the case where carrying out volume production mode, film deposition first can be carried out using wafer control slice before film deposition
Experiment presets several slow descending temperature ramp back downs, and progress several groups delay hypothermic response operation, and then descending temperature ramp back down is each delayed in measurement
The film thickness at crystal circle center corresponding to lower wafer control slice and edge is poor, is used with this to select or extrapolate the T1 period
Slow descending temperature ramp back down.
It should be noted that LPCVD technique is restricted to its reaction temperature or other reasons make boiler tube in the T1 period
Interior at the uniform velocity slow cooling is difficult to realize flat film, and multistage can be carried out within the T1 period and delays hypothermic response operation: in slow drop
Boiler tube delay under 10 DEG C/min of upper change point of warm slope and is cooled to 500 DEG C of third reaction temperature, it is anti-to then heat to first
After answering 520 DEG C of temperature, then is delayed with 10 DEG C/min of slow descending temperature ramp back down and be cooled to 500 DEG C of third reaction temperature, third reaction temperature
500 DEG C be film deposition minimum limit temperature, as shown in Figure 7.
As shown in figure 8, the method for the present embodiment, which applies also for 131 ' surface of substrate, has reeded wafer 130 ', root is needed
The first reaction temperature and the slow descending temperature ramp back down of T1 period are reset according to actual conditions, to be formed in wafer 130 '
Entreat region that there is the film 150 ' of consistent deposition thickness with neighboring area.
In the T1 period, furnace tube temperature is gradually decreased, and wafer peripheral is closer apart from boiler tube heating device, this part is first
Cooling, and wafer center apart from heating device farther out, it is slower to the reaction of cooling, therefore, the received heat of wafer from periphery to
Center is in increasing trend, then the rate (i.e. film formed rate) of gas aggradation from periphery to center be in increasing trend, from
And it avoids and deposits bowl-type film due to reaction gas is wafer surrounding concentration larger (because reaction gas is from the entrance of wafer surrounding)
The phenomenon that, improve the flatness of crystal column surface film.
Embodiment two
As shown in figure 9, wafer 230 is before entering boiler tube, 231 surface of substrate is deposited with chevron film 250A.
As shown in Figure 10, the membrane deposition method of the present embodiment is divided into three periods:
The T0 period: it is loaded into cassette 20 to the boiler tube for carrying wafer 230；Wafer 230 is heated in advance: control heating dress
It sets 10 pairs of boiler tubes and carries out the first heating operation, make to reach 520 DEG C of the first reaction temperature in boiler tube under pre-heating temperature elevation slope 200.
The T1 period: film 250B is formed in 231 surface of substrate of wafer 230: importing reaction gas in boiler tube, carry out
Chemically react and be deposited on 231 surface of substrate of wafer 230.Within the time period, control heating device 10 rises boiler tube slow
Warm slope 211 is lower to carry out, and the positive number for delaying heating slope 211 is less than pre-heating temperature elevation slope 210, the slow heating slope of the present embodiment
211 be 2 DEG C/min.
The T2 period: the cool wafers 230 under the slope 212 that cools.
It should be noted that slow heating slope 211 should control between upper and lower point of accumulation, it is preferable that for 1 DEG C and 10 DEG C it
Between, it operates the slow temperature reaction of T1 period and is carried out between the maximum limit temperature and minimum limit temperature that film deposits,
To guarantee that film can be deposited within the temperature range of technique requires.
After being deposition process as shown in figure 11, showing for film 250B is formed by 231 surface of substrate of wafer 230
It is intended to, film 250B has consistent deposition thickness in the middle section of wafer 230 and neighboring area.
Preferably, delay heating slope 211 can be 1~10 DEG C/min, cool slope 212 can for 1~10 DEG C/
Minute, but to guarantee that the positive number of slow heating slope is less than the positive number for the slope that cools.
Preferably, in the case where carrying out volume production mode, film deposition first can be carried out using wafer control slice before film deposition
Experiment presets several slow heating slopes, carries out several groups and delay temperature reaction operation, then each slow heating slope of measurement
The film thickness at crystal circle center corresponding to lower wafer control slice and edge is poor, is used with this to select or extrapolate the T1 period
Slow heating slope.
It should be noted that LPCVD technique is restricted to its reaction temperature or other reasons make boiler tube in the T1 period
Interior at the uniform velocity slow heating is difficult to realize flat film, and multistage can be carried out within the T1 period and delays temperature reaction operation: being risen slow
Boiler tube delay under 10 DEG C/min of warm slope upper change point and is warming up to 540 DEG C of the second reaction temperature, is then cooled to the first reaction
After 520 DEG C of temperature, then is delayed with 10 DEG C/min of slope of slow heating and be warming up to 540 DEG C of the second reaction temperature, the second reaction temperature 540
DEG C be film deposition maximum limit temperature, as shown in figure 12.
As shown in figure 13, the method for the present embodiment applies also for the reeded wafer 230 ' of 231 ' surface of substrate tool, needs
The slow heating slope for resetting the first reaction temperature and T1 period according to the actual situation, to be formed in wafer 230 '
Middle section has the film 250 ' of consistent deposition thickness with neighboring area.
In the T1 period, furnace tube temperature is gradually warmed up, and wafer surrounding is closer apart from boiler tube heating device, this part is first
Heating, and wafer center apart from heating device farther out, it is slower to the reaction of heating, therefore, the received heat of wafer from periphery to
Center tapers off trend, then the rate (i.e. film formed rate) of gas aggradation tapers off trend from periphery to center, from
And formed and compensated with mountain row film before, so that crystal column surface is deposited as the film of uniform flat.
Embodiment three
Since reaction gas is entered from bottom, it is located at the wafer in boiler tube on different location (top/middle section/bottom),
The degree that its substrate surface forms bowl-type film may be different, and the meeting of bottom is more serious, therefore can be arranged in boiler tube different zones
Different slow lifting/lowering temperature slopes, keeps the uniformity of film of same batch wafer consistent.
As shown in Figure 1, boiler tube is divided into five regions Z1~Z5 from top to bottom.
Before carrying out film deposition, slow cooling used in two groups of T1 periods (gas reaction and deposition process) is first set
Slope, and the film thickness for measuring its corresponding crystal round fringes and center is poor, as shown in Table 1 and Table 2:
Table 1
Table 2
Can be extrapolated in the T1 time according to Tables 1 and 2 should select the slow descending temperature ramp back down of table 3 in boiler tube different zones.
Table 3
The membrane deposition method that the present embodiment is carried out according to the above slow descending temperature ramp back down, is divided into three periods:
The T0 period: it is loaded into cassette 20 to the boiler tube for carrying wafer；Heat wafer in advance: control heating device 10 is right
Boiler tube carries out the first heating operation, and the region Z1~Z5 of boiler tube is made to respectively reach respective first reaction under pre-heating temperature elevation slope
Temperature: the region Z1 is 537 DEG C, and the region Z2 is 533 DEG C, and the region Z3 is 530 DEG C, and the region Z4 is 526 DEG C, and the region Z5 is 521 DEG C.
The T1 period: film is formed in the substrate surface of wafer: importing reaction gas in boiler tube, chemically reacted simultaneously
The substrate surface for being deposited on wafer forms film, and within the time period, control heating device 10 makes the region Z1~Z5 point of boiler tube
It is not dropped with 1 DEG C/min, 1.25 DEG C/min, 1.5 DEG C/min, 2.33 DEG C/min and 3 DEG C/min of slow descending temperature ramp back down
Temperature.
The T2 period: the cool wafers under the slope that cools.
It is plane or the reeded wafer of tool that the method for the present embodiment, which is suitable for substrate surface,.
As can be seen from Table 3, by setting boiler tube different zones different rate of temperature fall, can make to be located at boiler tube not same district
The wafer planarization degree in domain is improved, and the wafer uniform degree of same batch can be made consistent.
Explanation through the foregoing embodiment it is available the present invention by adopting the above technical scheme, by control deposition process in
Slow lifting/lowering temperature slope, changeable film thickness of the wafer from middle section to neighboring area is poor, improves the flatness of crystal column surface
And the uniformity, to form the deposition film with good flatness and the uniformity.
The above description is merely a specific embodiment, but scope of protection of the present invention is not limited thereto, any
Those familiar with the art in the technical scope disclosed by the present invention, can readily occur in its various change or replacement,
These should be covered by the protection scope of the present invention.Therefore, protection scope of the present invention should be with the guarantor of the claim
It protects subject to range.
Claims (10)
1. a kind of membrane deposition method, comprising:
It is loaded into cassette to the low-pressure chemical vapor deposition furnace (LPCVD) for carrying wafer；
The wafer is heated in advance, the first heating operation is carried out to the low-pressure chemical vapor deposition furnace, in pre-heating temperature elevation slope
Under reach the first reaction temperature；
Film is formed on the wafer, includes: importing reaction gas in the low-pressure chemical vapor deposition furnace, carry out chemistry
The substrate surface for reacting and being deposited on the wafer, in deposition process, to the temperature in the low-pressure chemical vapor deposition furnace
Carry out at least one section of the slow lifting/lowering temperature operation under slow lifting/lowering temperature slope so that the film on the wafer in
Entreat region and neighboring area that there is consistent deposition thickness；And
The cooling wafer under the slope that cools,
Wherein the control of point of accumulation up and down of the slow lifting/lowering temperature slope deposits the slow lifting/lowering temperature operation in film
It is carried out between maximum limit temperature and minimum limit temperature, and the positive number of the slow lifting/lowering temperature slope rises less than the preheating
The positive number of warm slope.
2. membrane deposition method according to claim 1, which is characterized in that the slow lifting/lowering temperature slope be 1~10 DEG C/
Divide kind, including endpoint value.
3. membrane deposition method according to claim 1, which is characterized in that the positive number of the slow lifting/lowering temperature slope is less than
The positive number of the slope that cools, the slope that cools is 1~10 DEG C/minute of kind, including endpoint value.
4. membrane deposition method according to claim 1, which is characterized in that the slow lifting/lowering temperature operation is multistage
Operation carries out the low-pressure chemical vapor deposition furnace between the point of accumulation up and down of the slow lifting/lowering temperature slope slow to be warming up to the
Two reaction temperatures are delayed again after then cooling down and are warming up to the second reaction temperature.
5. membrane deposition method according to claim 4, which is characterized in that second reaction temperature is film deposition
Maximum limit temperature.
6. membrane deposition method according to claim 1, which is characterized in that the slow lifting/lowering temperature operation is multistage
Operation carries out the low-pressure chemical vapor deposition furnace between the point of accumulation up and down of the slow lifting/lowering temperature slope slow to be cooled to the
Three reaction temperatures are delayed again after then heating up and are cooled to third reaction temperature.
7. membrane deposition method according to claim 6, which is characterized in that the third reaction temperature is film deposition
Minimum limit temperature.
8. membrane deposition method according to claim 1, which is characterized in that carry out volume production mode depositing thin film it
Before, film deposition is first carried out using wafer control slice, presets several slow lifting/lowering temperature slopes and slow lifting/lowering temperature operation, thereafter
The film thickness for measuring the corresponding crystal round fringes of the wafer control slice and center is poor, select or extrapolate according to this slow liter of optimization/
Descending temperature ramp back down and slow lifting/lowering temperature operation.
9. membrane deposition method according to claim 1, which is characterized in that the substrate surface of wafer is smooth flat or tool
It is fluted.
10. a kind of deposition film, is formed on wafer, middle section of the film on the wafer has with neighboring area
Consistent deposition thickness, the film is in low-pressure chemical vapor deposition furnace (LPCVD) and at least one under slow lifting/lowering temperature slope
It is formed under the slow lifting/lowering temperature operation of section.
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| CN110331387A (en) * | 2019-08-05 | 2019-10-15 | 德淮半导体有限公司 | A kind of chemical vapor deposition process |
| CN111309070A (en) * | 2019-12-27 | 2020-06-19 | 清华大学无锡应用技术研究院 | Method for uniformly controlling temperature of chemical vapor deposition equipment |
| CN111763929A (en) * | 2020-08-27 | 2020-10-13 | 泉芯集成电路制造(济南)有限公司 | Method, device and equipment for preparing chemical vapor deposition layer with controlled surface morphology |
| CN114000124A (en) * | 2020-07-28 | 2022-02-01 | 华邦电子股份有限公司 | Chemical vapor deposition process and film forming method |
| WO2022160595A1 (en) * | 2021-01-27 | 2022-08-04 | 长鑫存储技术有限公司 | Thin film deposition method and thin film deposition device |
| CN115478260A (en) * | 2021-05-31 | 2022-12-16 | 中芯国际集成电路制造(上海)有限公司 | Method for depositing film by low pressure chemical vapor deposition process |
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| JP2004273633A (en) * | 2003-03-06 | 2004-09-30 | Seiko Epson Corp | Semiconductor manufacturing apparatus, substrate temperature adjustment method, and semiconductor device |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110331387A (en) * | 2019-08-05 | 2019-10-15 | 德淮半导体有限公司 | A kind of chemical vapor deposition process |
| CN111309070A (en) * | 2019-12-27 | 2020-06-19 | 清华大学无锡应用技术研究院 | Method for uniformly controlling temperature of chemical vapor deposition equipment |
| CN114000124A (en) * | 2020-07-28 | 2022-02-01 | 华邦电子股份有限公司 | Chemical vapor deposition process and film forming method |
| CN111763929A (en) * | 2020-08-27 | 2020-10-13 | 泉芯集成电路制造(济南)有限公司 | Method, device and equipment for preparing chemical vapor deposition layer with controlled surface morphology |
| WO2022160595A1 (en) * | 2021-01-27 | 2022-08-04 | 长鑫存储技术有限公司 | Thin film deposition method and thin film deposition device |
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| CN115478260A (en) * | 2021-05-31 | 2022-12-16 | 中芯国际集成电路制造(上海)有限公司 | Method for depositing film by low pressure chemical vapor deposition process |
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