CN108728898A - A kind of epitaxial furnace silicon chip pedestal - Google Patents
A kind of epitaxial furnace silicon chip pedestal Download PDFInfo
- Publication number
- CN108728898A CN108728898A CN201710272642.0A CN201710272642A CN108728898A CN 108728898 A CN108728898 A CN 108728898A CN 201710272642 A CN201710272642 A CN 201710272642A CN 108728898 A CN108728898 A CN 108728898A
- Authority
- CN
- China
- Prior art keywords
- silicon chip
- heat
- base plate
- conducting block
- edge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Abstract
The present invention provides a kind of epitaxial furnace silicon chip pedestal, including base plate and heat-conducting block, for reducing the temperature with adjustment base plate edge.When there is extra raised areas at base plate back, what corresponding position temperature can be therewith where the silicon chip of base plate front is lower, with the reduction of temperature, the marginal position epitaxial deposition rate of silicon chip edge (110) crystal orientation also accordingly reduces, in this way, the epitaxial growth speed at bulk silicon piece edge can be made to tend to be identical, the ESFQR (Edge Site Rrontsurface referenced least sQuares/Range, edge front benchmark least square/range) of silicon chip is lessened in this way.Heat-conducting block can be separately machined, in this way during testing adjustment, haves no need to change base plate, it is only necessary to design different types of heat-conducting block, you can changes experiment condition, finds best process window.
Description
Technical field
The invention belongs to field of semiconductor manufacture, are related to a kind of epitaxial furnace silicon chip pedestal.
Background technology
Currently, the production technology of semiconductor has physical vaporous deposition (PVD) and chemical vapour deposition technique (CVD), most often
With being chemical vapour deposition technique (CVD), i.e.,：Hydrogen (H2) gas carrying silicon tetrachloride (SiCl4), trichlorosilane (SiHCl3) enter
It is equipped with the high temperature epitaxy stove of silicon substrate, high-temperature chemical reaction is carried out in epitaxial furnace, siliceous reaction gas is made to restore or thermally decompose,
The epitaxial growth on silicon chip surface of generated silicon atom.
With the development of science and technology and the continuous promotion of people's living standard, need of the people to high-performance semiconductor device
Ask increasing, require it is higher and higher.More chips are needed in single-wafer, however the serious edge decline phenomenon of silicon chip will be led
Cause the loss of single-wafer edge devices.Recently, DRAM (deposit by Dynamic Random Access Memory, dynamic randon access
Reservoir) etc. the manufacturers of devices have become increasingly aware of the importance of silicon chip edge drawdown parameter, such as flatness index ESFQR
(Edge Site Rrontsurface referenced least sQuares/Range, edge front benchmark minimum two
Multiply/range) and Curvature varying index ZDD (Z-Height Double Differentiation, the dual differential of Z height).Work as nothing
When the size of effect marginal zone reaches 0.5mm, the crystal face ESFQR values close to (110) are more much bigger than other regions.
Prior art discloses a kind of pedestals reducing ESFQR, and the circumferential place of susceptor edges is provided with one group of through-hole, and one
Determine to reduce the ESFQR of silicon chip edge in degree.However, this method may cause the unstable of air-flow, and then cause silicon chip thick
The problems such as degree is uneven.
Invention content
The purpose of the present invention is to provide a kind of epitaxial furnace silicon chip pedestals, to reduce the silicon in existing semiconductor epitaxial process
The ESFQR at piece edge.
In order to achieve the above object, the present invention provides a kind of epitaxial furnace silicon chip pedestals, including：Base plate, for holding
Carry silicon chip；The "T"-shaped slot being equally spaced there are four being set at the maximum outside diameter of the base plate bottom；Each "T"-shaped slot
It is equipped with the heat-conducting block that shape therewith matches.The heat distribution that heat-conducting block region is effectively adjusted using this design, because
The epitaxial growth speed of this monoblock silicon chip edge tends to be identical, and then achievees the purpose that reduce silicon chip edge ESFQR.
A kind of epitaxial furnace silicon chip pedestal as described above, it is preferable that the fluting of the "T"-shaped slot is along the base plate diameter
To direction open up.
Preferably, the base plate upper surface is equipped with concentric circular shape slot, high in epitaxial furnace due to working as silicon chip
Lower edge can be bent upwards in warm environment, the silicon chip of bending can be made fully to be placed on circle using the design of this circular shape slot
In the central channel of stepped groove.
Preferably, the heat-conducting block is inserted into the "T"-shaped slot, and the heat-conducting block detachably connects with the "T"-shaped slot
It connects.Using this design, the heat-conducting block can be effectively prevented and fallen from the "T"-shaped slot, the heat-conducting block is compared to described
Base plate can be separately machined, in this way during testing adjustment, haves no need to change base plate, it is only necessary to design different types of
Heat-conducting block, you can change experiment condition, find best process window.
Preferably, the heat-conducting block is inserted into the "T"-shaped slot and can be slided in the "T"-shaped slot, is set using this
Meter, can by the case where not changing base plate and heat-conducting block, only by change heat-conducting block in "T"-shaped slot into
The temperature that silicon chip edge is placed on base plate is corrected to amount.
Preferably, the depth that each heat-conducting block is inserted into the corresponding "T"-shaped slot is consistent, is set using this
Meter, ensure that the heat conductive equilibrium of four (110) crystal faces of the silicon chip, and silicon chip is made to have better flatness.
Preferably, side of the heat-conducting block far from the base plate is equipped with heat conduction boss, described to lead using this design
Heat block has the thermal mass of bigger, more conducively conducts the heat of the silicon chip and the base plate edge, and then reduce pedestal
Front surface temperature.
Preferably, the heat conduction boss is set to the one end of the heat-conducting block far from the base plate edge, using this
Design, the thermal mass of the heat-conducting block are relatively concentrated in the edge of the base plate, more conducively conduct the silicon chip and institute
State the heat of base plate.
Preferably, the cross-sectional shape of the heat conduction boss is semicircle or rectangle, using this design, is reduced described
The difficulty of processing of heat-conducting block and the heat conduction boss.
Preferably, the material of the base plate and the heat-conducting block is graphite (the SiC coated of coat of silicon carbide
Graphite) or carbon fiber (carbon fiber), using this design, the base plate and the heat-conducting block have good
Heat resistance and thermal conductivity, not only prevent the temperature distortion of pedestal and heat-conducting block, and be conducive to the silicon chip extension life
It is long.
In the pedestal of the present invention, set that there are four the "T"-shaped slot that is equally spaced, institutes at the maximum outside diameter of the base plate bottom
It states "T"-shaped slot and is equipped with shape therewith and match heat-conducting block.Therefore, silicon chip (110) crystal face is placed during epitaxial growth
In the "T"-shaped slot and the heat-conducting block corresponding region, the temperature of silicon chip edge is reduced, base where effectively adjusting heat-conducting block
The heat distribution in seat chassis region, tends to be identical, and then reached reduction silicon to the epitaxial growth speed of monoblock silicon chip edge
The purpose of piece edge ESFQR.
Description of the drawings
Fig. 1 is a kind of structural schematic diagram of epitaxial furnace silicon chip pedestal of the present invention；
Fig. 2 is floor map on a kind of base plate of epitaxial furnace silicon chip pedestal of the present invention；
Fig. 3 is a kind of base plate lower plane schematic diagram of epitaxial furnace silicon chip pedestal of the present invention；
Fig. 4 is silicon chip (110) crystal plane structure schematic diagram；
Fig. 5 is a kind of structural schematic diagram of the first embodiment of the heat-conducting block of epitaxial furnace silicon chip pedestal of the present invention；
Fig. 6 is a kind of structural schematic diagram of second of embodiment of heat-conducting block of epitaxial furnace silicon chip pedestal of the present invention；
Fig. 7 is a kind of structural schematic diagram of the third embodiment of the heat-conducting block of epitaxial furnace silicon chip pedestal of the present invention.
Wherein, 1- base plates；111,112,113, the "T"-shaped slots of 114-；121,122,123,124- heat-conducting blocks；131,
132,133,134- heat conduction boss；2- base supports；3- motors；4- silicon chips.
Specific implementation mode
The specific implementation mode of the present invention is described in more detail below in conjunction with schematic diagram.According to following description and
Claims, advantages and features of the invention will become apparent from.It should be noted that attached drawing is all made of very simplified form and
Using non-accurate ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
It please refers to Fig.1, Fig. 2 and Fig. 3, a kind of epitaxial furnace silicon chip pedestal disclosed by the invention includes：Base plate 1, is used for
Carry silicon chip 4；Base supports 2 are used to support base plate 1；Motor 3 for connecting base supports 2, and drives base supports 2
It is rotated with base plate 1.In existing epitaxial furnace, the temperature at 1 edge of base plate is higher, therefore 4 epitaxial growth of silicon chip
It will appear edge in journey and decline phenomenon, cause the ESFQR higher of silicon chip edge.It is discovered by experiment that when 1 back of base plate has
When extra raised areas, corresponding position temperature where 1 front silicon chip of base plate can be lower accordingly, with the drop of temperature
Low, the marginal position epitaxial deposition rate of 4 edge of silicon chip (110) crystal orientation also accordingly reduces, and in this way, can make monoblock
The epitaxial growth speed at 4 edge of silicon chip tends to be identical.Therefore, the present invention is equipped with equidistant at 1 bottom maximum outside diameter of base plate
Distribution "T"-shaped slot 111,112,113 and 114, while "T"-shaped slot be equipped with shape therewith match heat-conducting block 121,122,
123 and 124.
Referring to Fig. 4, Fig. 4 is silicon chip (110) crystal plane structure schematic diagram, due to silicon chip 4 (110) crystal face there are four, and
Adjacent (110) crystal face is to be mutually perpendicular to.Therefore four are devised at 1 bottom maximum outside diameter of base plate to be equally spaced
"T"-shaped slot 111,112,113 and 114, and the heat-conducting block 121,122,123 and 124 that matches with "T"-shaped groove shape.
Before epitaxial furnace start-up operation, the main shaft of base supports 2 is mounted on motor 3, is then kept flat base plate 1
In base supports 2, larger centrifugal force is generated in order to reduce the rotation of base plate 1 during extension furnaceman makees, to draw
The base plate 1 risen is unstable, adjusts the position of base plate 1, base plate 1 is adjusted to concentric with 2 main shaft of base supports
Position；Silicon chip 4 is placed in 1 positive circular concentric stepped groove 101 and 102 of base plate, in order to prevent silicon chip 4 with
The inconsistent caused uneven heating of the 4 edge linear velocity of silicon chip in rotary course of base plate 1, and then influences the outer of silicon chip 4
Epitaxial growth adjusts the position of silicon chip 4, make the center of circle of silicon chip 4 respectively with 3 main shaft of concentric circles stepped groove 101,102 and base supports
With one heart；There are four (110) crystal faces at 4 edge of silicon chip, and is mutually perpendicular to two-by-two, therefore adjusts the position of silicon chip 4, makes silicon chip 4
(110) crystal face is vertical with the fluting direction of "T"-shaped slot 111,112,113 and 114 respectively, using such design, base plate 1
The distribution of back side protrusion is more uniform, and then the heat dissipation of edge (110) crystal face of silicon chip 4 is more balanced.
Referring to Fig. 5, Fig. 5 is a kind of structural representation of the first embodiment of epitaxial furnace silicon chip pedestal heat-conducting block of the invention
Figure, heat-conducting block 121,122,123 and 124 match with "T"-shaped slot 111,112,113 and 114 respectively.Due to heat-conducting block 121,
122,123 is identical with 124 size and shapes, by taking heat-conducting block 121 as an example, heat-conducting block 121 can be plugged into "T"-shaped slot 111 and with
The inner wall clearance fit of "T"-shaped slot 111 defines that heat-conducting block 121 exists since the section of the outer profile of heat-conducting block 121 is "T"-shaped
The activity of vertical direction, the degree of freedom there is no restriction heat-conducting block 121 in the fluting direction of "T"-shaped slot 111, therefore in outer masterpiece
It is slided along the fluting direction of "T"-shaped slot 111 with the mode that lower heat-conducting block 121 can translate.During extension furnaceman makees, electricity
Machine 3 can drive base supports 2 and base plate 1 slowly to rotate, under normal conditions for 25 turns per minute hereinafter, heat-conducting block 121 with
The stiction traverse furrow that 111 clearance fit of "T"-shaped slot generates provides enough centrifugal force, therefore heat-conducting block 121 is along "T"-shaped slot
111 fluting direction will not produce relative sliding and shift.Heat-conducting block can be determined according to specific production and experiment condition
121,122,123 and 124 depth for being inserted into "T"-shaped slot 111,112,113 and 114, in order to ensure base plate 1 and silicon chip 4
Edge heating condition is consistent, therefore enables heat-conducting block 121,122,123 and 124 be inserted into "T"-shaped slot 111,112,113 and 114 and slot
The depth in direction is identical.In order to which the thermal mass for making heat-conducting block have bigger is set by taking heat-conducting block 121 as an example in 121 bottom of heat-conducting block
A heat conduction boss 131 is counted, heat conduction boss 131 can be designed to semicircle, 131 semicircle of heat conduction boss in order to reduce difficulty of processing
The equivalent width of the diameter and 121 bottom of heat-conducting block of shape.In actual use, heat-conducting block 121 is inserted into "T"-shaped slot
In 111, and by one end with heat conduction boss 131 close to the edge of 1 bottom of base plate.
Fig. 6 please be participate in, Fig. 6 is that a kind of structure of second of embodiment of heat-conducting block of epitaxial furnace silicon chip pedestal of the present invention is shown
It is intended to.When needing to produce larger sized silicon chip 4, the base plate 1 of mating larger size specification is generally required to dispose
Silicon chip 4.Therefore, the heat-conducting block and heat conduction boss of bigger thermal mass are not only needed；And base plate edge in actual production
Linear velocity can be promoted, the displacement of the heat-conducting block that is inserted into order to prevent in "T"-shaped slot or even throws away phenomenon, needs more static friction
Power provides centrifugal force.By taking heat-conducting block 122 as an example, present embodiment devises larger sized semicircle heat conduction boss 132, leads
132 semicircular diameter of hot boss is more than heat-conducting block bottom width.Not only make the thermal mass of heat-conducting block 122 using such design
Increase, and even closer with the clearance fit of "T"-shaped slot 112, is capable of providing more centrifugal force, and then prevent heat-conducting block
It 122 slidings in rotary course and throws away.
Referring to Fig. 7, the structure that Fig. 7 is a kind of heat-conducting block of epitaxial furnace silicon chip pedestal of the present invention the third embodiment is shown
It is intended to.Before putting into large batch of 4 actual production of silicon chip, debugging production technology such as heating temperature, extension furnace gas are generally required
Pressure, heating time etc. seek a good process window, since the cost of base plate 1 is high, in base plate 1
In the case of constant, the heat-conducting block for replacing different sizes and shapes heat conduction boss is an at low cost, quick approach.To lead
For heat block 123, present embodiment devises asymmetrical heat conduction boss 133, and heat conduction boss 133 is cuboid, and heat conduction is convex
The width of platform 133 is more than 113 bottom width of "T"-shaped slot.Using such design, on the one hand, similar second can be obtained in fact
Apply the effect of mode such as：Coordinate between the thermal mass of bigger, better thermal diffusivity and even closer slot；On the other hand, use is non-
Symmetrical 133 design of heat conduction boss changes thermal mass distribution and the heat dissipation region at 1 back of base plate, to correct experiment condition
Condition is provided with the process window for finding best.
Heat-conducting block 121,122,123,124 and base plate 1 in summary be all made of coat of silicon carbide graphite or
Carbon fiber, to use the graphite of coat of silicon carbide as preferred embodiment.Heat-conducting block 121,122,123,124 and base plate 1 use
The graphite of coat of silicon carbide has good heat resistance, thermal conductivity and corrosion resistance, meets in epitaxial furnace high temperature, highly corrosive
Environmental condition working condition.
In the pedestal of the present invention, set that there are four the "T"-shaped slot that is equally spaced, institutes at the maximum outside diameter of the base plate bottom
It states "T"-shaped slot and is equipped with shape therewith and match heat-conducting block.Therefore, silicon chip (110) crystal face is placed during epitaxial growth
In the "T"-shaped slot and the heat-conducting block corresponding region, the temperature of silicon chip edge is reduced, base where effectively adjusting heat-conducting block
The heat distribution in seat chassis region, tends to be identical, and then reached reduction silicon to the epitaxial growth speed of monoblock silicon chip edge
The purpose of piece edge ESFQR.
The preferred embodiment of the present invention is above are only, does not play the role of any restrictions to the present invention.Belonging to any
Those skilled in the art, in the range of not departing from technical scheme of the present invention, to the invention discloses technical solution and
Technology contents make the variations such as any type of equivalent replacement or modification, belong to the content without departing from technical scheme of the present invention, still
Within belonging to the scope of protection of the present invention.
Claims (10)
1. a kind of epitaxial furnace silicon chip pedestal, which is characterized in that including：
Base plate, for carrying silicon chip；
Set at the maximum outside diameter of the base plate bottom there are four the "T"-shaped slot that is equally spaced, be equipped in the "T"-shaped slot with
The heat-conducting block that matches of shape.
2. a kind of epitaxial furnace silicon chip pedestal as described in claim 1, which is characterized in that the fluting of the "T"-shaped slot is along described
The radial direction of base plate opens up.
3. a kind of epitaxial furnace silicon chip pedestal as described in claim 1, which is characterized in that the base plate upper surface is equipped with same
The circular shape slot of the heart.
4. a kind of epitaxial furnace silicon chip pedestal as described in claim 1, which is characterized in that the heat-conducting block and the "T"-shaped slot
It is detachably connected.
5. a kind of epitaxial furnace silicon chip pedestal as claimed in claim 4, which is characterized in that the heat-conducting block is inserted into described "T"-shaped
It can slide in slot and in the "T"-shaped slot.
6. a kind of epitaxial furnace silicon chip pedestal as claimed in claim 5, which is characterized in that each heat-conducting block is inserted into accordingly
The "T"-shaped slot in depth it is consistent.
7. a kind of epitaxial furnace silicon chip pedestal as claimed in claim 6, which is characterized in that the heat-conducting block is far from the pedestal bottom
The side of disk is equipped with heat conduction boss.
8. a kind of epitaxial furnace silicon chip pedestal as claimed in claim 7, which is characterized in that the heat conduction boss is set to described lead
The one end of heat block far from the base plate edge.
9. a kind of epitaxial furnace silicon chip pedestal as claimed in claim 8, which is characterized in that the cross-sectional shape of the heat conduction boss
For semicircle or rectangle.
10. a kind of epitaxial furnace silicon chip pedestal as described in claim 1, which is characterized in that the base plate and the heat conduction
The material of block is the graphite or carbon fiber of coat of silicon carbide.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710272642.0A CN108728898A (en) | 2017-04-24 | 2017-04-24 | A kind of epitaxial furnace silicon chip pedestal |
| TW106128616A TWI633199B (en) | 2017-04-24 | 2017-08-23 | An epitaxy wafer susceptor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710272642.0A CN108728898A (en) | 2017-04-24 | 2017-04-24 | A kind of epitaxial furnace silicon chip pedestal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108728898A true CN108728898A (en) | 2018-11-02 |
Family
ID=63934452
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710272642.0A Pending CN108728898A (en) | 2017-04-24 | 2017-04-24 | A kind of epitaxial furnace silicon chip pedestal |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN108728898A (en) |
| TW (1) | TWI633199B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114686975A (en) * | 2020-12-31 | 2022-07-01 | 上海新昇半导体科技有限公司 | Epitaxial base and epitaxial equipment |
| CN115094515A (en) * | 2022-06-01 | 2022-09-23 | 中环领先半导体材料有限公司 | Process for improving local flatness of logic epitaxial product |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114686975A (en) * | 2020-12-31 | 2022-07-01 | 上海新昇半导体科技有限公司 | Epitaxial base and epitaxial equipment |
| CN115094515A (en) * | 2022-06-01 | 2022-09-23 | 中环领先半导体材料有限公司 | Process for improving local flatness of logic epitaxial product |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201839161A (en) | 2018-11-01 |
| TWI633199B (en) | 2018-08-21 |
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Application publication date: 20181102 |