CN206052204U - Silicon chip extension pedestal with coat of silicon carbide - Google Patents
Silicon chip extension pedestal with coat of silicon carbide Download PDFInfo
- Publication number
- CN206052204U CN206052204U CN201620918487.6U CN201620918487U CN206052204U CN 206052204 U CN206052204 U CN 206052204U CN 201620918487 U CN201620918487 U CN 201620918487U CN 206052204 U CN206052204 U CN 206052204U
- Authority
- CN
- China
- Prior art keywords
- pedestal
- silicon chip
- silicon
- graphite
- chip extension
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
The utility model discloses a kind of silicon chip extension pedestal with coat of silicon carbide, including graphite-based pedestal and the multiple silicon chip extension grooves being arranged on the graphite-based pedestal, the graphite-based pedestal and silicon chip extension groove surfaces are coated with coat of silicon carbide.Silicon chip extension pedestal of the present utility model is by graphite-based pedestal and silicon chip extension groove surfaces coating silicon carbide coating, the carbon and other impurity that effectively prevent in graphite is polluted to silicon chip, and then can produce high cleanliness, high-quality silicon epitaxial wafer.
Description
Technical field
This utility model is related to semiconductor production equipment field, more particularly to a kind of silicon chip extension with coat of silicon carbide
Pedestal.
Background technology
Silicon epitaxial wafer is the silicon chip for one layer of monocrystal silicon (epitaxial layer) being grown in substrate silicon and being formed, and enterprise is extensive
During production silicon epitaxial wafer, easily polluted by the graphite base of directly contact, so as to pure silicon epitaxial wafer cannot be obtained.
Solution to the problems described above is to carry out corrosion treatmentCorrosion Science to graphite base surface with chromic acid solution at present, more pure so as to obtain
Surface, but this method complex process, and excessive erosion is caused to graphite base easily so as to crack, so as to damage
Graphite base.
Utility model content
To solve above-mentioned technical problem, the utility model discloses a kind of silicon chip extension pedestal with coat of silicon carbide,
Including graphite-based pedestal and the multiple silicon chip extension grooves being arranged on the graphite-based pedestal, the graphite-based pedestal and silicon
Piece extension groove surfaces are coated with coat of silicon carbide.
As further improvement of the utility model, if on the graphite-based pedestal and being provided with dry gas in silicon chip extension groove
Hole.
Used as further improvement of the utility model, the graphite-based pedestal is provided with multiple locating pieces.
As further improvement of the utility model, on the graphite-based pedestal, some screwed holes are additionally provided with.
The beneficial effects of the utility model are：
Silicon chip extension pedestal of the present utility model is by graphite-based pedestal and silicon chip extension groove surfaces coating silicon carbide
Coating, the carbon and other impurity that effectively prevent in graphite are polluted to silicon chip, and then can produce high cleanliness, height
The silicon epitaxial wafer of quality.
Description of the drawings
For the technical scheme being illustrated more clearly that in this utility model embodiment, below will be to making needed for embodiment
Accompanying drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the present utility model,
For those of ordinary skill in the art, without having to pay creative labor, can be being obtained according to these accompanying drawings
Obtain other accompanying drawings.
Fig. 1 is structural representation of the present utility model.
Labelling in figure：1- graphite-based pedestals；2- silicon chip extension grooves；3- pores；4- locating pieces；5- screwed holes.
Specific embodiment
Below in conjunction with the accompanying drawing in this utility model embodiment, the technical scheme in this utility model embodiment is carried out
Clearly and completely describe, it is clear that described embodiment is only this utility model a part of embodiment, rather than whole
Embodiment.
As shown in figure 1, a kind of silicon chip extension pedestal with coat of silicon carbide, including graphite-based pedestal 1 and it is arranged on
Multiple silicon chip extension grooves 2 on graphite-based pedestal 1, graphite-based pedestal 1 and 2 surface of silicon chip extension groove are coated with carborundum
Coating.
Some pores 3 are provided with graphite-based pedestal 1 and in silicon chip extension groove 2；It is multiple fixed to be additionally provided with graphite-based pedestal 1
Position block 4 and some screwed holes 5.
Silicon chip extension pedestal of the present utility model is by being carbonized in graphite-based pedestal 1 and 2 surface-coated of silicon chip extension groove
Silicon coating, effectively prevent carbon in graphite and other impurity are polluted to silicon chip, so can produce high cleanliness,
High-quality silicon epitaxial wafer.
Preferred embodiment of the present utility model is the foregoing is only, it is not to limit this utility model, all at this
Within the spirit and principle of utility model, any modification, equivalent substitution and improvements made etc. should be included in this utility model
Protection domain within.
Claims (4)
1. a kind of silicon chip extension pedestal with coat of silicon carbide, it is characterised in that including graphite-based pedestal and be arranged on institute
The multiple silicon chip extension grooves on graphite-based pedestal are stated, the graphite-based pedestal and silicon chip extension groove surfaces are coated with carbonization
Silicon coating.
2. the silicon chip extension pedestal with coat of silicon carbide according to claim 1, it is characterised in that the graphite base
On body and some pores are provided with silicon chip extension groove.
3. the silicon chip extension pedestal with coat of silicon carbide according to claim 2, it is characterised in that the graphite base
Body is provided with multiple locating pieces.
4. the silicon chip extension pedestal with coat of silicon carbide according to claim 3, it is characterised in that the graphite base
Some screwed holes are additionally provided with body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620918487.6U CN206052204U (en) | 2016-08-22 | 2016-08-22 | Silicon chip extension pedestal with coat of silicon carbide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620918487.6U CN206052204U (en) | 2016-08-22 | 2016-08-22 | Silicon chip extension pedestal with coat of silicon carbide |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206052204U true CN206052204U (en) | 2017-03-29 |
Family
ID=58384896
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620918487.6U Expired - Fee Related CN206052204U (en) | 2016-08-22 | 2016-08-22 | Silicon chip extension pedestal with coat of silicon carbide |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206052204U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108728898A (en) * | 2017-04-24 | 2018-11-02 | 上海新昇半导体科技有限公司 | A kind of epitaxial furnace silicon chip pedestal |
| CN108987539A (en) * | 2018-05-31 | 2018-12-11 | 华灿光电（浙江）有限公司 | A kind of graphite base suitable for LED epitaxial slice growth |
| CN111441086A (en) * | 2020-05-11 | 2020-07-24 | 东莞市志橙半导体材料有限公司 | Silicon carbide graphite base suitable for development process |
| CN116516473A (en) * | 2023-06-09 | 2023-08-01 | 中电科先进材料技术创新有限公司 | Support piece for supporting silicon epitaxial wafer for monolithic epitaxial furnace and monolithic epitaxial furnace |
-
2016
- 2016-08-22 CN CN201620918487.6U patent/CN206052204U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108728898A (en) * | 2017-04-24 | 2018-11-02 | 上海新昇半导体科技有限公司 | A kind of epitaxial furnace silicon chip pedestal |
| CN108987539A (en) * | 2018-05-31 | 2018-12-11 | 华灿光电（浙江）有限公司 | A kind of graphite base suitable for LED epitaxial slice growth |
| CN111441086A (en) * | 2020-05-11 | 2020-07-24 | 东莞市志橙半导体材料有限公司 | Silicon carbide graphite base suitable for development process |
| CN116516473A (en) * | 2023-06-09 | 2023-08-01 | 中电科先进材料技术创新有限公司 | Support piece for supporting silicon epitaxial wafer for monolithic epitaxial furnace and monolithic epitaxial furnace |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170329 Termination date: 20200822 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |