CN107523828B - A kind of preparation method of GaN and diamond composite radiating structure - Google Patents
A kind of preparation method of GaN and diamond composite radiating structure Download PDFInfo
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
- C23C14/0652—Silicon nitride
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/274—Diamond only using microwave discharges
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Abstract
A kind of preparation method of GaN and diamond composite radiating structure, the present invention relates to the preparation method for the radiator structure that diamond film layer is connect with GaN, it is for the heat dissipation performance for solving the problem of existing GaN device GaN to be improved easy fragmentation during the growth process.Preparation method: one, it is cleaned by ultrasonic GaN wafer；Two, Si is coated in clean GaN wafer3N4Transition zone；Three, continue magnetron sputtering and be coated with Si transition zone；Four, it is cleaned by ultrasonic；Five, auxiliary nucleation point is established on surface；Six, it is placed in depositing diamond layer in MPCVD device.The thermal conductivity of the diamond layer on the surface GaN of the present invention can achieve 1260 ± 120W/ (mK), prepare Si3N4Transition zone is non-conductive, effective protection GaN device performance, and GaN can be protected from plasma attack.
Description
Technical field
The present invention relates to the preparation methods for the radiator structure that diamond film layer is connect with GaN.
Background technique
Due to quickly growing for present device, the frequency and integrated level of electronic device are higher and higher, therefore the concentration of heat production
Property is also higher and higher, and device heat production can not be ignored the stability of work.Therefore, how efficiently, quickly by heat derives,
Emphasis as industry research.Requirement for Heat Conduction Material, it is just more urgent.Thermal conductivity (thermal conductivity)
It is the key parameter for describing thermal conductivity of material, the preparation of high thermal conductivity material is essential in electronic device anterior approach
A ring.
Representative of the GaN as third generation semiconductor material, is present and many main of semiconductor devices prepare material in the future
Material.But the thermal conductivity of GaN only has 220W/ (mK), and amount of heat generation is had in the use process of semiconductor devices,
And with the promotion of electronic device frequency, the problem of heat gathers, can especially be highlighted, and therefore, how solve the heat dissipation of GaN device
Problem, preparing the novel radiator structure of one kind is the most important thing.
And diamond possesses numerous excellent properties: thermal conductivity at room temperature is high, reaches 2200W/ (mK) and resistance
Rate is higher, stability is good, is the fabulous selection as heat sink material, but how to connect it with GaN is urgently to be resolved ask
Topic.GaN electronic device is generally prepared by GaN wafer, and the method for existing bonding is to connect GaN wafer with diamond, but pass
System bonding method is being polished on one side in GaN and diamond, and needs to reach the roughness of Nano grade, but many institute's weeks
Know, diamond is very difficult due to its extreme hardness, its polishing；In addition, traditional bonding method will also on burnishing surface
It is coated with metal layer (generally Au etc.), since metal is conductive layer, having for the performance of GaN device centainly influences, institute
With traditional bonding method has the disadvantage in that
1, raw material preparation is difficult, and surface roughness requirements are high；
2, bonded layer is metal, influences GaN device performance；
3, less economical.
Microwave plasma enhanced chemical vapor deposition (MPCVD) method prepares diamond phase compared with hot-wire chemical gas-phase deposition
(HFCVD) method has no filament material for the pollution in diamond preparation process, prepares diamond purity is high；Equipment operation
The advantages that stabilization, favorable repeatability.
Summary of the invention
The purpose of the present invention is to solve the heat dissipation performance of existing GaN device is to be improved, GaN is easy during the growth process
The problem of fragmentation, and the preparation method of a kind of GaN and diamond composite radiating structure are provided.
The preparation method of GaN of the present invention and diamond composite radiating structure are realized according to the following steps:
One, GaN wafer is sequentially placed into dehydrated alcohol and deionized water and is cleaned by ultrasonic, it is brilliant to obtain clean GaN
Piece；
Two, the GaN wafer after cleaning is placed in magnetic control sputtering device, controls 20~100sccm of flow of Ar gas, penetrates
Frequency 30~60W of power, 0.3~2Pa of deposition pressure are coated with Si in clean GaN wafer3N4Transition zone obtains being coated with Si3N4
The GaN wafer of transition zone；
Three, it is being coated with Si3N4The GaN wafer of transition zone continues magnetron sputtering and is coated with Si transition zone, controls Ar gas flow 20
~100sccm, 30~60W of radio-frequency power, 0.3~2Pa of deposition pressure obtain the GaN wafer for being coated with two layers of transition zone；
Four, the GaN wafer for being coated with two layers of transition zone is sequentially placed into dehydrated alcohol and deionized water and is cleaned by ultrasonic,
The GaN wafer of transition zone is had after being cleaned；
Five, after cleaning the surface spin coating nanodiamond suspension of GaN wafer with transition zone, bortz powder or
Diamond paste establishes auxiliary nucleation point on surface, obtains the GaN wafer for establishing auxiliary nucleation point；
Six, the GaN wafer for the foundation auxiliary nucleation point that step 5 obtains is placed in depositing diamond layer in MPCVD device,
It is passed through hydrogen and methane gas, controls 100~300sccm of hydrogen flowing quantity, 5~30sccm of methane flow, deposition pressure 100~
300mBar, completes the preparation of GaN and diamond composite radiating structure by 700~900 DEG C of depositing temperature.
The present invention prepares diamond radiator structure using MPCVD method on GaN, and the heat dissipation to solve GaN device is asked
Topic, and solve stability problem of the GaN in MPCVD equipment using the method that transition zone is protected, while improving diamond
With the associativity of substrate.
The preparation method of GaN of the present invention and diamond composite radiating structure include it is following the utility model has the advantages that
1, the purity is high of diamond is prepared, thermal conductivity is higher, and the thermal conductivity of GaN surface diamond can achieve 1260 ±
120W/(mK)；
2, Si is prepared3N4Transition zone is non-conductive, effective protection GaN device performance, and GaN can be protected to invade from plasma
Erosion；
3, it prepares Si transition zone and diamond phase capacitive is good, be easy to grow diamond；
4, each interlayer gapless is grown, is combined compared with each layer of bonding method even closer.
Detailed description of the invention
Fig. 1 is the scanning electron microscope diagram of the GaN that embodiment obtains and diamond composite radiating structure；
Fig. 2 is the scanning electron microscope diagram of the diamond layer deposited in embodiment；
Fig. 3 is the laser Raman spectroscopy figure of the diamond layer deposited in embodiment.
Specific embodiment
Specific embodiment 1: the preparation method of present embodiment GaN and diamond composite radiating structure is according to the following steps
Implement:
One, GaN wafer is sequentially placed into dehydrated alcohol and deionized water and is cleaned by ultrasonic, it is brilliant to obtain clean GaN
Piece；
Two, the GaN wafer after cleaning is placed in magnetic control sputtering device, controls 20~100sccm of flow of Ar gas, penetrates
Frequency 30~60W of power, 0.3~2Pa of deposition pressure are coated with Si in clean GaN wafer3N4Transition zone obtains being coated with Si3N4
The GaN wafer of transition zone；
Three, it is being coated with Si3N4The GaN wafer of transition zone continues magnetron sputtering and is coated with Si transition zone, controls Ar gas flow 20
~100sccm, 30~60W of radio-frequency power, 0.3~2Pa of deposition pressure obtain the GaN wafer for being coated with two layers of transition zone；
Four, the GaN wafer for being coated with two layers of transition zone is sequentially placed into dehydrated alcohol and deionized water and is cleaned by ultrasonic,
The GaN wafer of transition zone is had after being cleaned；
Five, after cleaning the surface spin coating nanodiamond suspension of GaN wafer with transition zone, bortz powder or
Diamond paste establishes auxiliary nucleation point on surface, obtains the GaN wafer for establishing auxiliary nucleation point；
Six, the GaN wafer for the foundation auxiliary nucleation point that step 5 obtains is placed in depositing diamond layer in MPCVD device,
It is passed through hydrogen and methane gas, controls 100~300sccm of hydrogen flowing quantity, 5~30sccm of methane flow, deposition pressure 100~
300mBar, completes the preparation of GaN and diamond composite radiating structure by 700~900 DEG C of depositing temperature.
Etching phenomenon is generated since GaN can react in high temperature with hydrogen plasma, and in present embodiment, preparation
Si3N4Transition zone was both non-conductive, just will not influence characteristic of the GaN as semiconductor, and do not react with hydrogen plasma, then can
Enough preferable protection GaN base bottoms.But pass through many experiments, Si3N4Forming core substrate as diamond can not but generate enough
Forming core growing point, can not preferably support the forming core of diamond to grow, therefore, in present embodiment again utilize Si and Si3N4's
Compatibility is preferable, and is compatible with diamond fabulous this characteristic of forming core substrate again, in Si3N4Surface carry out Si mistake
The preparation for crossing layer in this, as the forming core face of diamond, and achieves fabulous effect.If GaN was being grown without transition zone
Easily fragmentation in journey.
Specific embodiment 2: the present embodiment is different from the first embodiment in that step 1 by GaN wafer successively
It is placed in dehydrated alcohol and deionized water and is respectively cleaned by ultrasonic 15min.Other steps and parameter are same as the specific embodiment one.
Specific embodiment 3: the present embodiment is different from the first and the second embodiment in that step 2 controls Ar gas
Flow 50sccm, radio-frequency power 40W, deposition pressure 0.5Pa.Other steps and parameter and specific embodiment one or two-phase
Together.
Specific embodiment 4: step 2 is in cleaning unlike one of present embodiment and specific embodiment one to three
GaN wafer on be coated with Si with a thickness of 10~100nm3N4Transition zone.Other steps and parameter and specific embodiment one to three
One of it is identical.
Specific embodiment 5: step 3 unlike one of present embodiment and specific embodiment one to four is being coated with
Si3N4The GaN wafer of transition zone continues magnetron sputtering and is coated with the Si transition zone with a thickness of 10~100nm.Other steps and parameter with
One of specific embodiment one to four is identical.
Specific embodiment 6: step 3 controls Ar unlike one of present embodiment and specific embodiment one to five
Gas flow 50sccm, radio-frequency power 50W, deposition pressure 0.5Pa.Other steps and parameter and specific embodiment one to five it
One is identical.
Specific embodiment 7: step 4 unlike one of present embodiment and specific embodiment one to six is coated with two
The GaN wafer of layer transition zone, which is sequentially placed into dehydrated alcohol and deionized water, is respectively cleaned by ultrasonic 10~30min.Other steps and ginseng
Number is identical as one of specific embodiment one to six.
The effect of present embodiment is to remove the impurity for crossing layer surface in GaN wafer.
Specific embodiment 8: described in step 5 unlike one of present embodiment and specific embodiment one to seven
The granularity of Nano diamond is 10~50nm in nanodiamond suspension.Other steps and parameter and specific embodiment one to
One of seven is identical.
Specific embodiment 9: step 6 unlike one of present embodiment and specific embodiment one to eight is passed through hydrogen
Gas and methane gas control hydrogen flowing quantity 150sccm, methane flow 5sccm, deposition pressure 150mBar.Other steps and parameter
It is identical as one of specific embodiment one to eight.
Specific embodiment 10: step 6 control is heavy unlike one of present embodiment and specific embodiment one to nine
Accumulated temperature degree is 750 DEG C.Other steps and parameter are identical as one of specific embodiment one to nine.
Embodiment: the present embodiment GaN and the preparation method of diamond composite radiating structure are implemented according to the following steps:
One, GaN wafer is sequentially placed into dehydrated alcohol and deionized water and is respectively cleaned by ultrasonic 15min, remove surface impurity,
Obtain clean GaN wafer；
Two, the GaN wafer after cleaning is placed in magnetic control sputtering device, controls the flow 50sccm of Ar gas, radio frequency function
Rate 40W, deposition pressure 0.5Pa are coated with the Si with a thickness of 50nm in clean GaN wafer3N4Transition zone obtains being coated with Si3N4
The GaN wafer of transition zone；
Three, it is being coated with Si3N4The GaN wafer of transition zone continues magnetron sputtering and is coated with the Si transition zone with a thickness of 50nm, controls
Ar gas flow 50sccm, radio-frequency power 40W, deposition pressure 0.5Pa, obtain the GaN wafer for being coated with two layers of transition zone；
Four, the GaN wafer for being coated with two layers of transition zone is sequentially placed into dehydrated alcohol and deionized water and is respectively cleaned by ultrasonic
15min has the GaN wafer of transition zone after being cleaned；
Five, the surface spin coating nanodiamond suspension for having the GaN wafer of transition zone after cleaning, is established auxiliary on surface
Nucleation point is helped, the GaN wafer for establishing auxiliary nucleation point is obtained；
Six, the GaN wafer for the foundation auxiliary nucleation point that step 5 obtains is placed in depositing diamond layer in MPCVD device,
It is passed through hydrogen and methane gas, controls hydrogen flowing quantity 150sccm, methane flow 5sccm, deposition pressure 150mBar, depositing temperature
750 DEG C, complete the preparation of GaN and diamond composite radiating structure.
Nanodiamond suspension described in step 5 is purchased from Beijing company, RISESUN, state, model DND- in the present embodiment
30-W。
The present embodiment carries out the multilayer GaN and diamond composite radiating structure that are prepared using scanning electron microscope
Observation, as depicted in figs. 1 and 2, diamond growth thickness is uniform, and transition zone preferably protects GaN base bottom, as without transition zone
GaN is during the growth process due to the etching of hydrogen plasma easily fragmentation, and the present embodiment preparation process GaN base piece is stablized, and does not have
There is generation fragmentation, associativity is good；It is tested using diamond of the laser Raman spectrometer to preparation, such as Fig. 3, diamond peak
Position is obvious, shows that diamond purity is higher, and halfwidth reaches 8cm-1, show that diamond crystalline is good, can reach using mark
It is quasi-.
Claims (9)
1. the preparation method of a kind of GaN and diamond composite radiating structure, it is characterised in that this method is to realize according to the following steps:
One, GaN wafer is sequentially placed into dehydrated alcohol and deionized water and is cleaned by ultrasonic, obtain clean GaN wafer；
Two, the GaN wafer after cleaning is placed in magnetic control sputtering device, controls 20~100sccm of flow of Ar gas, radio frequency function
30~60W of rate, 0.3~2Pa of deposition pressure are coated with Si in clean GaN wafer3N4Transition zone obtains being coated with Si3N4Transition
The GaN wafer of layer；
Three, it is being coated with Si3N4The GaN wafer of transition zone continues magnetron sputtering and is coated with Si transition zone, and control Ar gas flow 20~
100sccm, 30~60W of radio-frequency power, 0.3~2Pa of deposition pressure obtain the GaN wafer for being coated with two layers of transition zone；
Four, the GaN wafer for being coated with two layers of transition zone is sequentially placed into dehydrated alcohol and deionized water and is cleaned by ultrasonic, obtained
The GaN wafer of transition zone is had after cleaning；
Five, surface spin coating nanodiamond suspension, bortz powder or the Buddha's warrior attendant of the GaN wafer of transition zone are had after cleaning
Stone abrasive pastes establish auxiliary nucleation point on surface, obtain the GaN wafer for establishing auxiliary nucleation point；
Six, the GaN wafer for the foundation auxiliary nucleation point that step 5 obtains is placed in depositing diamond layer in MPCVD device, be passed through
Hydrogen and methane gas, control 100~300sccm of hydrogen flowing quantity, 5~30sccm of methane flow, deposition pressure 100~
300mbar, completes the preparation of GaN and diamond composite radiating structure by 750~900 DEG C of depositing temperature.
2. the preparation method of a kind of GaN and diamond composite radiating structure according to claim 1, it is characterised in that step
GaN wafer is sequentially placed into dehydrated alcohol and deionized water and is respectively cleaned by ultrasonic 15min by one.
3. the preparation method of a kind of GaN and diamond composite radiating structure according to claim 1, it is characterised in that step
The flow 50sccm, radio-frequency power 40W, deposition pressure 0.5Pa of two control Ar gases.
4. the preparation method of a kind of GaN and diamond composite radiating structure according to claim 1, it is characterised in that step
Two Si being coated in clean GaN wafer with a thickness of 10~100nm3N4Transition zone.
5. the preparation method of a kind of GaN and diamond composite radiating structure according to claim 1, it is characterised in that step
Three are being coated with Si3N4The GaN wafer of transition zone continues magnetron sputtering and is coated with the Si transition zone with a thickness of 10~100nm.
6. the preparation method of a kind of GaN and diamond composite radiating structure according to claim 1, it is characterised in that step
Three control Ar gas flow 50sccm, radio-frequency power 50W, deposition pressure 0.5Pa.
7. the preparation method of a kind of GaN and diamond composite radiating structure according to claim 1, it is characterised in that step
Four GaN wafers for being coated with two layers of transition zone, which are sequentially placed into dehydrated alcohol and deionized water, is respectively cleaned by ultrasonic 10~30min.
8. the preparation method of a kind of GaN and diamond composite radiating structure according to claim 1, it is characterised in that step
The granularity of Nano diamond is 10~50nm in nanodiamond suspension described in five.
9. the preparation method of a kind of GaN and diamond composite radiating structure according to claim 1, it is characterised in that step
Six are passed through hydrogen and methane gas, control hydrogen flowing quantity 150sccm, methane flow 5sccm, deposition pressure 150mbar.
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| CN111129184A (en) * | 2019-12-30 | 2020-05-08 | 长春理工大学 | High-efficiency heat-dissipation semiconductor substrate and preparation method thereof |
| CN114334854A (en) | 2020-09-30 | 2022-04-12 | 华为技术有限公司 | Chip, manufacturing method thereof and electronic device |
| CN113564520A (en) * | 2021-07-08 | 2021-10-29 | 哈工大机器人(中山)无人装备与人工智能研究院 | Preparation method of GaAs and diamond composite heat dissipation structure |
| CN113782505B (en) * | 2021-09-24 | 2022-11-01 | 哈尔滨工业大学 | Surface smoothing and connecting method of diamond radiating fin |
| CN114695133B (en) * | 2022-03-25 | 2023-04-28 | 哈尔滨工业大学 | Preparation method of diamond integrated three-dimensional chip with through holes |
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| CN1599062A (en) * | 2004-08-20 | 2005-03-23 | 清华大学 | Large-area heat sink structure for large power semiconductor device |
| CN102130244A (en) * | 2010-12-17 | 2011-07-20 | 天津理工大学 | LED (light-emitting diode) radiating substrate based on diamond film and manufacturing method thereof |
| CN107039373A (en) * | 2017-05-31 | 2017-08-11 | 母凤文 | Gallium nitride device structure and preparation method thereof |
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| US20060113545A1 (en) * | 2004-10-14 | 2006-06-01 | Weber Eicke R | Wide bandgap semiconductor layers on SOD structures |
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| CN1599062A (en) * | 2004-08-20 | 2005-03-23 | 清华大学 | Large-area heat sink structure for large power semiconductor device |
| CN102130244A (en) * | 2010-12-17 | 2011-07-20 | 天津理工大学 | LED (light-emitting diode) radiating substrate based on diamond film and manufacturing method thereof |
| CN107039373A (en) * | 2017-05-31 | 2017-08-11 | 母凤文 | Gallium nitride device structure and preparation method thereof |
Non-Patent Citations (1)
| Title |
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| "基于硅过渡层纳米金刚石膜/GaN复合膜系的制备";刘金龙等;《新型炭材料》;20161031;第31卷(第5期);第518-519页引言部分、第519页试验部分、第523页结论部分 |
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