JP4739776B2 - Susceptor - Google Patents
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- JP4739776B2 JP4739776B2 JP2005053480A JP2005053480A JP4739776B2 JP 4739776 B2 JP4739776 B2 JP 4739776B2 JP 2005053480 A JP2005053480 A JP 2005053480A JP 2005053480 A JP2005053480 A JP 2005053480A JP 4739776 B2 JP4739776 B2 JP 4739776B2
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Description
本発明は、半導体製造に用いるサセプタに関し、特に、ケイ素（Ｓｉ）を気相成長させる際に用いるサセプタに関するものである。 The present invention relates to a susceptor used for semiconductor manufacture, and more particularly to a susceptor used when vapor-phase-growing silicon (Si).
表面粗さＲｍａｘ（最大高さＲｙ）が０．５μｍ以下であるサセプタが、例えば、下記特許文献１に開示されている。この特許文献１のものは、黒鉛基材からなる円板状のサセプタ本体の片面に半導体ウエーハを収容する円形の多数のウエーハ収容凹部を設けてなる気相成長用縦型サセプタにおいて、前記ウエーハ収容凹部以外のサセプタ本体の片面の表面粗さＲｍａｘを０．５μｍ以下としたことを特徴とする気相成長用縦型サセプタである。
特許文献１のような従来の気相成長用サセプタに半導体ウェハをセットして、エピタキシャル成長を行うと、半導体ウェハだけでなく、半導体ウェハの載置部分以外のサセプタ表面にも堆積した膜（以下、堆積膜とする）が形成される。その後、半導体ウェハを取り替えて、新たにエピタキシャル成長を行うという作業を繰り返すと、半導体ウェハの載置部分以外のサセプタ表面には、さらに膜が堆積形成され、抵抗の不良、結晶欠陥、パーティクルを発生させてしまう。したがって、定期的な気相エッチングにより、サセプタ表面上の堆積した膜を除去する作業が必要であった。 When a semiconductor wafer is set on a conventional vapor phase susceptor such as Patent Document 1 and epitaxial growth is performed, not only the semiconductor wafer but also a film deposited on the surface of the susceptor other than the portion on which the semiconductor wafer is mounted (hereinafter referred to as “the semiconductor wafer”). A deposited film) is formed. After that, when the operation of replacing the semiconductor wafer and newly performing epitaxial growth is repeated, a film is further deposited on the surface of the susceptor other than the mounting portion of the semiconductor wafer, causing defective resistance, crystal defects, and particles. End up. Therefore, it is necessary to remove the deposited film on the susceptor surface by periodic vapor-phase etching.
そこで、本発明の目的は、サセプタ上の表面粗さを適正化することにより、サセプタ上の堆積膜の表面粗さを抑え、気相エッチング回数を低減させ得るサセプタを提供することである。 Accordingly, an object of the present invention is to provide a susceptor that can suppress the surface roughness of the deposited film on the susceptor and reduce the number of times of vapor phase etching by optimizing the surface roughness on the susceptor.
本発明のサセプタは、少なくとも１つのザグリを有するＣＶＤ−ＳｉＣ被覆黒鉛からなるＳｉのエピタキシャル成長用のサセプタであって、ザグリ面以外の表面における算術平均粗さＲａが０．５μｍよりも大きく１．０μｍ未満である。なお、ザグリ面以外の表面の算術平均粗さＲａは、０．８μｍ以上且つ１．０μｍ未満であることが好ましい。ここで、「ザグリ面以外の表面」とは、上記引用文献１に開示される「ウエーハ収容凹部以外のサセプタ本体の片面」と同様のものである。
The susceptor of the present invention is a susceptor for epitaxial growth of Si made of CVD-SiC-coated graphite having at least one counterbore, and has an arithmetic average roughness Ra on a surface other than the counterbore surface larger than 0.5 μm and 1.0. It is less than μm. In addition, it is preferable that arithmetic mean roughness Ra of surfaces other than the counterbore surface is 0.8 μm or more and less than 1.0 μm. Here, the “surface other than the counterbore surface” is the same as “one side of the susceptor body other than the wafer housing recess” disclosed in the above cited reference 1.
なお、上述の最大高さＲｙ（表面粗さＲｍａｘ）とは、粗さ曲線から、その平均線の方向に標準長さだけ抜き取り、この抜き取り部分の平均線から最も高い山頂までの高さＹｐと最も低い谷底までの深さＹｖとの和のことである。一箇所でも際立って高い山や深い谷があると、大きな値になってしまい測定値のバラツキが大きくなる特徴がある。
また、算術平均粗さＲａとは、粗さ曲線から、その平均線の方向に標準長さだけ抜き取り、この抜き取り部分の平均線から測定曲線までの偏差の絶対値を合計し、平均した値のことである。一つの傷が測定値に及ぼす影響が非常に小さくなり、安定した結果が得られる特徴がある。
また、本願は、ウエハ収容凹部以外の全表面にわたって平均的に滑らかで、堆積膜の付着量を少なくするサセプタを提供することが最大の目的であり、表面の一部に大きな傷があったとしても、堆積膜の付着量に大きな影響を与えることがないサセプタを提供することをも目的としている。
以上の理由により本願の目的とするサセプタの評価には、算術平均粗さＲａでなければならないと判断する。
Note that the above-mentioned maximum height Ry (surface roughness Rmax), the roughness curve, the average line direction of the extraction only standard length Sada, the height Yp to highest peak from the mean line of this extracted portion It is the sum of the depth Yv to the lowest valley bottom. If there is a conspicuously high mountain or deep valley even in one place, it becomes a large value and there is a feature that the variation of the measured value becomes large.
Further, the arithmetic mean roughness Ra, the roughness curve, the average line direction extraction only standard length Sada the sums of the absolute values of deviations from a mean line of this extracted portion to a measurement curve, the average value of That is. There is a feature that the influence of one scratch on the measured value becomes very small and a stable result can be obtained.
In addition, the main purpose of the present application is to provide a susceptor that is smooth on the entire surface other than the wafer receiving recesses and that reduces the amount of deposited film deposited, and there is a large scratch on a part of the surface. Another object of the present invention is to provide a susceptor that does not greatly affect the adhesion amount of the deposited film.
For the reasons described above, it is determined that the arithmetic average roughness Ra must be used for the evaluation of the susceptor targeted by the present application.
本発明によれば、サセプタ上の堆積膜の成長速度を減少させ、抵抗の不良、結晶欠陥、パーティクルの発生を堆積膜の一定膜厚まで抑制することができるので、気相エッチング回数を低減できる。 According to the present invention, since the growth rate of the deposited film on the susceptor can be reduced and the generation of defective resistance, crystal defects, and particles can be suppressed to a certain thickness of the deposited film, the number of times of vapor phase etching can be reduced. .
本発明の実施形態に係るサセプタは、ＣＶＤ−ＳｉＣ被覆黒鉛からなるＳｉのエピタキシャル成長用のサセプタであって、ザグリ面以外の表面の算術平均粗さＲａが０．１〜１μｍのものである。本サセプタは、少なくとも１つのザグリを有すればよく、枚葉式（図３）、バレル式（図４）、パンケーキ式（図５）、いずれの型のものでもよい。 The susceptor according to the embodiment of the present invention is a susceptor for epitaxial growth of Si made of CVD-SiC-coated graphite, and has an arithmetic average roughness Ra of 0.1 to 1 μm on the surface other than the counterbore surface. The susceptor only needs to have at least one counterbore, and may be any of a single wafer type (FIG. 3), a barrel type (FIG. 4), and a pancake type (FIG. 5).
ＣＶＤ法において、ガスの種類の選択や温度等の調整を行うことで、ザグリ面以外の表面の算術平均粗さＲａが０．１〜１μｍのサセプタを容易に製造することができる。 In the CVD method, a susceptor having an arithmetic average roughness Ra of 0.1 to 1 μm on the surface other than the counterbore can be easily manufactured by selecting the type of gas and adjusting the temperature.
また、ＣＶＤ法でＳｉＣ膜を炭素基材表面に形成した後、ＳｉＣ膜表面を研磨して、ザグリ面以外の表面の算術平均粗さＲａが０．１〜１μｍとなるように調整してもよい。この研磨方法としては、例えば、Ｒａ１〜５μｍのＣＶＤ−ＳｉＣ膜を被覆した治具によって行うＳｉＣ共材研磨が挙げられる。また、他の方法として、研磨剤を用いて、乾式又は湿式研磨を行ってもよい。このとき、Ｒａ０．１〜１μｍを実現するために、＃３５０以上、好ましくは＃６００以上のＳｉＣ若しくはダイヤモンドの研磨剤を使用する。また、砥石で直接研磨することとしてもよい。
算術平均粗さＲａ０．１μｍ以下のＳｉＣ膜の表面でも本発明と同様な効果が得られるが、研磨コストが高くさらに生産性も低いので、ザグリ面以外の表面の算術平均粗さＲａは０．１〜１μｍとすることが好ましく、０．１〜０．５μｍとすることがさらに好ましい。
In addition, after forming the SiC film on the carbon substrate surface by the CVD method, the SiC film surface is polished and adjusted so that the arithmetic average roughness Ra of the surface other than the counterbore surface is 0.1 to 1 μm. Good. As this polishing method, for example, SiC co-material polishing performed with a jig coated with a CVD-SiC film of Ra 1 to 5 μm can be mentioned. As another method, dry or wet polishing may be performed using an abrasive. At this time, in order to realize Ra 0.1 to 1 μm, a SiC or diamond abrasive of # 350 or more, preferably # 600 or more is used. Moreover, it is good also as grind | polishing directly with a grindstone.
The same effect as that of the present invention can be obtained even on the surface of an SiC film having an arithmetic average roughness Ra of 0.1 μm or less, but since the polishing cost is high and the productivity is low, the arithmetic average roughness Ra of the surface other than the counterbore surface is 0. The thickness is preferably 1 to 1 μm, and more preferably 0.1 to 0.5 μm.
本実施形態によれば、容易に製造でき、かつ、コストを抑制し、さらに堆積膜の膜厚を一定以上厚くできるサセプタを提供できる。また、本実施形態に係るサセプタは、パーティクルの発生を堆積膜の一定膜厚まで抑制することができるので、エッチング回数を低減できるものである。 According to the present embodiment, it is possible to provide a susceptor that can be easily manufactured, that can reduce costs, and that can further increase the thickness of the deposited film. Moreover, since the susceptor according to the present embodiment can suppress the generation of particles to a certain thickness of the deposited film, the number of etchings can be reduced.
（実施例１）
ＣＶＤ装置内において、１２５０℃、ＳｉＣｌ4／Ｃ3Ｈ8／Ｈ2ガスを用い、黒鉛基材に１００μｍのＳｉＣ被覆を行った。サセプタの算術平均粗さＲａは０．８μｍ（Ｒｙ６μｍ）であった。このサセプタを用いてＳｉをエピタキシャル成長させたところ、堆積Ｓｉ膜の厚さが１５０μｍになったところでパーティクルが発生した。図６に示すように、堆積Ｓｉ膜の厚さが５０μｍの時の走査型電子顕微鏡（ＳＥＭ）による表面および断面観察からは、堆積Ｓｉの表面に凹凸が多少観察されるようになる。また、図７に示すように、堆積Ｓｉ膜の厚さが５０μｍの時のサセプタ表面のＸ線回折図形（ＸＲＤ）から、Ｓｉ（１１１）/Ｓｉ（２２０）の相対強度は０．０４であった。
Example 1
In a CVD apparatus, a SiC substrate of 100 μm was coated on a graphite substrate using SiCl 4 / C 3 H 8 / H 2 gas at 1250 ° C. The arithmetic average roughness Ra of the susceptor was 0.8 μm (Ry6 μm). When Si was epitaxially grown using this susceptor, particles were generated when the thickness of the deposited Si film reached 150 μm. As shown in FIG. 6, from the observation of the surface and the cross section by the scanning electron microscope (SEM) when the thickness of the deposited Si film is 50 μm, some unevenness is observed on the surface of the deposited Si. Further, as shown in FIG. 7, the relative intensity of Si (111) / Si (220) was 0.04 from the X-ray diffraction pattern (XRD) of the susceptor surface when the thickness of the deposited Si film was 50 μm. It was.
（参考例１）
ＣＶＤ装置内において、１４００℃、ＳｉＣｌ４／Ｃ３Ｈ８／Ｈ２ガスを用い、黒鉛基材に１００μｍのＳｉＣ被覆を行った。ＳｉＣ製砥石と純水とを用いて、ザグリ以外の面を約１０μｍ湿式研磨し、サセプタの算術平均粗さＲａを０．３μｍ（Ｒｙ２．５μｍ）に調整した。このサセプタを用いてＳｉをエピタキシャル成長させたところ、堆積Ｓｉ膜の厚さが１６０μｍになったところでパーティクルが発生した。図８に示すように、堆積Ｓｉ膜の厚さが５０μｍの時のＳＥＭによる表面および断面観察からは、堆積Ｓｉの表面が滑らかであることが観察される。図９に示すように、堆積Ｓｉ膜の厚さが５０μｍの時のサセプタ表面のＸＲＤからは、Ｓｉ（１１１）/Ｓｉ（２２０）の相対強度は、０であった。
( Reference Example 1 )
In a CVD apparatus, 1400 ° C., SiCl 4 / C 3 H 8 / H 2 gas was used, and a graphite substrate was coated with 100 μm of SiC. A surface other than the counterbore was wet-polished by about 10 μm using a SiC grindstone and pure water, and the arithmetic average roughness Ra of the susceptor was adjusted to 0.3 μm (Ry 2.5 μm). When Si was epitaxially grown using this susceptor, particles were generated when the thickness of the deposited Si film reached 160 μm. As shown in FIG. 8, it is observed from the surface and cross-sectional observation by SEM when the thickness of the deposited Si film is 50 μm that the surface of the deposited Si is smooth. As shown in FIG. 9, the relative intensity of Si (111) / Si (220) was 0 from the XRD of the susceptor surface when the thickness of the deposited Si film was 50 μm.
（比較例１）
ＣＶＤ装置内において、１４００℃、ＳｉＣｌ4／Ｃ3Ｈ8／Ｈ2ガスを用い、黒鉛基材に１００μｍのＳｉＣ被覆を行った。サセプタの算術平均粗さＲａは５μｍ（Ｒｙ２７μｍ）であった。このサセプタを用いてＳｉをエピタキシャル成長させたところ、堆積Ｓｉ膜の厚さが４０μｍになったところでパーティクルが発生した。図１０に示すように、堆積Ｓｉ膜の厚さが５０μｍの時のＳＥＭによる表面および断面観察からは、堆積Ｓｉの表面が大きな凹凸であることが観察される。大きな凹凸が観察されると，パーティクル発生の原因となる。図１１に示すように、堆積Ｓｉ膜の厚さが５０μｍの時のサセプタ表面のＸＲＤからは、Ｓｉ（１１１）/Ｓｉ（２２０）の相対強度は、０．４７であった。相対強度が０．２以上となると，抵抗の不良および結晶欠陥が発生する原因となる。
(Comparative Example 1)
In a CVD apparatus, a SiC substrate of 100 μm was coated on a graphite substrate using SiCl 4 / C 3 H 8 / H 2 gas at 1400 ° C. The arithmetic average roughness Ra of the susceptor was 5 μm (Ry 27 μm). When Si was epitaxially grown using this susceptor, particles were generated when the thickness of the deposited Si film reached 40 μm. As shown in FIG. 10, from the surface and cross-sectional observation by SEM when the thickness of the deposited Si film is 50 μm, it is observed that the surface of the deposited Si has large irregularities. When large irregularities are observed, it causes generation of particles. As shown in FIG. 11, the relative intensity of Si (111) / Si (220) was 0.47 from the XRD of the susceptor surface when the thickness of the deposited Si film was 50 μm. When the relative strength is 0.2 or more, it causes a defective resistance and a crystal defect.
（比較例２）
ＣＶＤ装置内において、１４００℃、ＳｉＣｌ4／Ｃ3Ｈ8／Ｈ2ガスを用い、黒鉛基材に１００μｍのＳｉＣ被覆を行った。ザグリ以外の面を約３μｍ乾式研磨し、サセプタの算術平均粗さＲａを２μｍ（Ｒｙ１１μｍ）に調整した。このサセプタを用いてＳｉをエピタキシャル成長させたところ、堆積Ｓｉ膜の厚さが６０μｍになったところでパーティクルが発生した。図１２に示すように、堆積Ｓｉ膜の厚さが５０μｍの時のＳＥＭによる表面および断面観察からは、堆積Ｓｉの表面が大きな凹凸であることが観察される。大きな凹凸が観察されると，パーティクル発生の原因となる。図１３に示すように、堆積Ｓｉ膜の厚さが５０μｍの時のサセプタ表面のＸＲＤからは、Ｓｉ（１１１）/Ｓｉ（２２０）の相対強度は、０．２４であった。相対強度が０．２以上となると，抵抗の不良および結晶欠陥が発生する原因となる。
(Comparative Example 2)
In a CVD apparatus, a SiC substrate of 100 μm was coated on a graphite substrate using SiCl 4 / C 3 H 8 / H 2 gas at 1400 ° C. The surface other than the counterbore was dry-polished by about 3 μm, and the arithmetic average roughness Ra of the susceptor was adjusted to 2 μm (Ry11 μm). When Si was epitaxially grown using this susceptor, particles were generated when the thickness of the deposited Si film reached 60 μm. As shown in FIG. 12, from the surface and cross-sectional observation by SEM when the thickness of the deposited Si film is 50 μm, it is observed that the surface of the deposited Si has large irregularities. When large irregularities are observed, it causes generation of particles. As shown in FIG. 13, the relative strength of Si (111) / Si (220) was 0.24 from the XRD of the susceptor surface when the thickness of the deposited Si film was 50 μm. When the relative strength is 0.2 or more, it causes a defective resistance and a crystal defect.
(比較例３)
ＣＶＤ装置内において、１４００℃、ＳｉＣｌ4／Ｃ3Ｈ8／Ｈ2ガスを用い、黒鉛基材に１００μｍのＳｉＣ被覆を行った。回転式研磨装置を用いて、ダイヤモンド砥粒と純水を用いてザグリ以外の面を約２０μｍ湿式研磨し、サセプタの算術平均粗さＲａを０．０５μｍ（Ｒｙ０．４μｍ）に調整した。このサセプタを用いてＳｉをエピタキシャル成長させたところ、堆積Ｓｉ膜の厚さが１６５μｍになったところでパーティクルが発生した。図１４に示すように、堆積Ｓｉ膜の厚さが５０μｍの時のＳＥＭによる表面および断面観察からは、堆積Ｓｉの表面が滑らかであることが観察される。図１５に示すように、堆積Ｓｉ膜の厚さが５０μｍの時のサセプタ表面のＸＲＤからは、Ｓｉ（１１１）/Ｓｉ（２２０）の相対強度は、０であった。
(Comparative Example 3)
In a CVD apparatus, a SiC substrate of 100 μm was coated on a graphite substrate using SiCl 4 / C 3 H 8 / H 2 gas at 1400 ° C. A surface other than the counterbore was wet-polished by about 20 μm using diamond abrasive grains and pure water using a rotary polishing apparatus, and the arithmetic average roughness Ra of the susceptor was adjusted to 0.05 μm (Ry 0.4 μm). When Si was epitaxially grown using this susceptor, particles were generated when the thickness of the deposited Si film reached 165 μm. As shown in FIG. 14, it is observed from the surface and cross-sectional observation by SEM when the thickness of the deposited Si film is 50 μm that the surface of the deposited Si is smooth. As shown in FIG. 15, the relative strength of Si (111) / Si (220) was 0 from the XRD of the susceptor surface when the thickness of the deposited Si film was 50 μm.
これらの結果をまとめて図１、図１６、図１７のグラフに示す。実施例１では、堆積Ｓｉ膜が１５０μｍに達するまで、参考例１では堆積Ｓｉ膜が１６０μｍに達するまで、抵抗の不良、結晶欠陥、パーティクルが発生しなかったのに対し、比較例１、２ではそれぞれ４０μｍ、６０μｍになったところで、抵抗の不良、結晶欠陥、パーティクルが発生した。これらの結果により、本発明に係る実施例１及び参考例１によれば、比較例１〜２に比べ、抵抗の不良、結晶欠陥、パーティクルの発生を堆積Ｓｉ膜の一定膜厚まで抑制することができるので、エッチング回数を低減できるサセプタを容易に製造することができることがわかる。また、比較例３では，堆積Ｓｉ膜が１６５μｍに達するまで、抵抗の不良、結晶欠陥、パーティクルの発生はなかったが、回転式研磨装置を用いなければならず研磨コストが高額になった。さらに，複雑な形状のサセプタには応用できないデメリットもあることがわかった。 These results are collectively shown in the graphs of FIGS. 1, 16, and 17. In Example 1, until the deposited Si film reached 150 μm, and in Reference Example 1 , until the deposited Si film reached 160 μm, defective resistance, crystal defects, and particles did not occur, whereas in Comparative Examples 1 and 2, When the thickness was 40 μm and 60 μm, resistance failure, crystal defects, and particles were generated. From these results, according to Example 1 and Reference Example 1 according to the present invention, compared to Comparative Examples 1 and 2, it is possible to suppress the generation of defective resistance, crystal defects, and particles to a certain thickness of the deposited Si film. Therefore, it can be seen that a susceptor capable of reducing the number of etchings can be easily manufactured. In Comparative Example 3, there was no defective resistance, crystal defects, or particles until the deposited Si film reached 165 μm. However, a rotary polishing apparatus had to be used, and the polishing cost was high. Furthermore, it was found that there are some disadvantages that cannot be applied to complex shaped susceptors.
図２に本発明にかかる実施例、参考例及び比較例のサセプタのザグリ以外の表面の算術平均粗さＲａと最大高さＲｙの関係を示す。最大高さＲｙ（表面粗さＲｍａｘ）を０．５μｍ以下にするためには，算術平均粗さＲａを少なくとも０．０３μｍ以下にする必要があることが分かる。 FIG. 2 shows the relationship between the arithmetic average roughness Ra and the maximum height Ry of the surface of the susceptor other than counterbore in the examples , reference examples, and comparative examples according to the present invention. It can be seen that in order to make the maximum height Ry (surface roughness Rmax) 0.5 μm or less, the arithmetic average roughness Ra needs to be at least 0.03 μm or less.
なお、本発明は、特許請求の範囲を逸脱しない範囲で設計変更できるものであり、上記実施形態や実施例に限定されるものではない。 The present invention can be changed in design without departing from the scope of the claims, and is not limited to the above-described embodiments and examples.
Claims (2)
The susceptor according to claim 1, wherein the arithmetic average roughness Ra on the surface other than the counterbore surface is 0.8 μm or more and less than 1.0 μm.
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