JP4581081B2 - Method for producing silicon carbide smoothed substrate used for producing epitaxial wafer, apparatus for smoothing silicon carbide substrate surface and SiC epitaxial growth - Google Patents
Method for producing silicon carbide smoothed substrate used for producing epitaxial wafer, apparatus for smoothing silicon carbide substrate surface and SiC epitaxial growth Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims description 81
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 69
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 68
- 238000009499 grossing Methods 0.000 title claims description 35
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 238000005530 etching Methods 0.000 claims description 25
- 239000007789 gas Substances 0.000 claims description 22
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 21
- 239000001257 hydrogen Substances 0.000 claims description 21
- 229910052739 hydrogen Inorganic materials 0.000 claims description 21
- 239000013078 crystal Substances 0.000 claims description 14
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 11
- 229910000077 silane Inorganic materials 0.000 claims description 11
- 239000002994 raw material Substances 0.000 claims description 7
- 238000005498 polishing Methods 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 238000003763 carbonization Methods 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 20
- 238000000034 method Methods 0.000 description 7
- 230000003746 surface roughness Effects 0.000 description 6
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 238000000879 optical micrograph Methods 0.000 description 3
- 239000012808 vapor phase Substances 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000001294 propane Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000000089 atomic force micrograph Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
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Description
本発明は、炭化珪素の結晶成長に関与し、エピタキシャルウエハ作製時に用いる炭化珪素平滑化基板の作製方法、炭化珪素基板表面の平滑化及びＳｉＣエピタキシャル成長に用いる装置に関する。 The present invention relates to a method for producing a silicon carbide smoothed substrate used for producing epitaxial wafers , an apparatus used for smoothing the surface of silicon carbide substrates, and SiC epitaxial growth .
良好な表面状態を有するエピタキシャルウエハを得るために、エピタキシャル成長前に炭化珪素（ＳｉＣ）基板の表面の研磨傷等によるダメージを取り除くことが重要である。基板平滑化の方法の一つとして水素による表面のエッチングが行われている。一般に水素エッチングはプロパンガスを添加しながら行われるが、水素エッチングを行った後の基板の表面には研磨傷等によるダメージが残留しており、このＳｉＣ基板を用いて作製したＳｉＣエピタキシャルウエハの表面では三角形状欠陥による荒れが生じる（図１（ａ））。このため、水素エッチングの時間を延長することによりエッチング量を増加させ、基板を更に平滑化することが必要であるが、エッチング量の増加によってステップバンチングの発生による基板表面の荒れの問題が生じる（図１（ｂ））。 In order to obtain an epitaxial wafer having a good surface state, it is important to remove damage caused by polishing scratches on the surface of the silicon carbide (SiC) substrate before epitaxial growth. Etching the surface with hydrogen is one of the methods for smoothing the substrate. In general, hydrogen etching is performed while adding propane gas. However, damage due to polishing scratches or the like remains on the surface of the substrate after the hydrogen etching, and the surface of the SiC epitaxial wafer manufactured using this SiC substrate. Then, roughness due to a triangular defect occurs (FIG. 1A). Therefore, it is necessary to increase the etching amount by extending the time of hydrogen etching and further smooth the substrate. However, the increase in the etching amount causes a problem of roughening of the substrate surface due to generation of step bunching ( FIG. 1 (b)).
本発明は上記の問題を改善するため、水素エッチング中のエッチング量を減らしながら良好な表面を有し、かつ表面粗さの少ないＳｉＣ平滑化基板を作製する方法、この方法によって得られたＳｉＣ平滑化基板、同基板上に作製されたＳｉＣエピタキシャルウエハ、及び同ウエハ上に作製された半導体基板を提供することを目的とする。 In order to improve the above problems, the present invention provides a method for producing an SiC smoothed substrate having a good surface and low surface roughness while reducing the etching amount during hydrogen etching, and the SiC smoothing obtained by this method. An object of the present invention is to provide a chemical substrate, a SiC epitaxial wafer fabricated on the substrate, and a semiconductor substrate fabricated on the wafer.
本発明は、上記に鑑み提案されたもので、水素雰囲気で行う化学気相成長装置において、表面の研磨ダメージを取り除くためのＳｉＣ基板の平滑化における水素エッチング時にエピタキシャル成長用原料ガスとして用いるシランを添加することを特徴とするエピタキシャルウエハ作製時に用いるＳｉＣ平滑化基板の作製方法を提供するものである。 The present invention has been proposed in view of the above, and in a chemical vapor deposition apparatus performed in a hydrogen atmosphere, silane used as a source gas for epitaxial growth is added during hydrogen etching in smoothing the SiC substrate to remove surface polishing damage. The present invention provides a method for producing a SiC smoothing substrate used in producing an epitaxial wafer.
また、前記ＳｉＣ平滑化基板の作製方法、及びそれにより作製されたＳｉＣ平滑化基板において、α型の結晶構造を持つＳｉＣ基板を用いること（＝請求項２）、４Ｈの結晶構造を持つＳｉＣ基板を用いること（＝請求項３）、６Ｈの結晶構造を持つＳｉＣ基板を用いること（＝請求項４）、（０００１）Ｓｉ面を〈１１−２０〉方向へ０°以上８°以下傾けたＳｉＣ基板を用いること（＝請求項５）、（０００−１）Ｃ面を〈１１−２０〉方向へ０°以上８°以下傾けたＳｉＣ基板を用いること（＝請求項６）、（０００１）Ｓｉ面を〈１１−２０〉方向へ０°以上３.５°以下傾けたＳｉＣ基板を用いること（＝請求項７）が望ましい。 Also, a manufacturing method of the SiC smoothing substrates and SiC substrates having the SiC smoothing substrate produced by it, the use of the SiC substrate having the α-type crystal structure (= claim 2), the crystal structure of 4H (= Claim 3 ), a SiC substrate having a 6H crystal structure (= Claim 4 ), and a (0001) Si surface tilted by 0 ° or more and 8 ° or less in the <11-20> direction. Use a substrate (= Claim 5 ), use a SiC substrate in which the (000-1) C-plane is inclined by 0 ° or more and 8 ° or less in the <11-20> direction (= Claim 6 ), (0001) Si It is desirable to use a SiC substrate whose surface is inclined by 0 ° or more and 3.5 ° or less in the <11-20> direction (= claim 7 ).
また、本発明は、前記ＳｉＣ平滑化基板を用いて作製したＳｉＣエピタキシャルウエハ（＝請求項９）、窒化ガリウム（ＧａＮ）ウエハ（＝請求項１０）をも提案する。 The present invention also proposes an SiC epitaxial wafer (= Claim 9 ) and a gallium nitride (GaN) wafer (= Claim 10 ) manufactured using the SiC smoothed substrate.
また、前記作製方法により作製された炭化珪素平滑化基板表面の平滑化及びＳｉＣエピタキシャル成長に用いる装置であって、エピタキシャル成長用原料ガスとして用いるシランガス供給ラインを２系統有することを特徴とする炭化珪素基板表面の平滑化及びＳｉＣエピタキシャル成長に用いる装置をも提案する。
A silicon carbide substrate surface characterized in that it is an apparatus used for smoothing and SiC epitaxial growth of a silicon carbide smoothed substrate surface produced by the above production method , comprising two systems of silane gas supply lines used as a raw material gas for epitaxial growth. An apparatus used for smoothing and SiC epitaxial growth is also proposed.
本発明のＳｉＣ平滑化基板の製造方法は、水素エッチングの際にエピタキシャル成長用原料ガス（シラン）を微量添加することにより、ステップバンチングによる基板表面の荒れを抑え、かつエッチング量を減少させることができる。
そして、本発明により得られたＳｉＣ平滑化基板は、従来の方法で得られる平滑化基板と比較して表面粗さが低減しているだけではなく、ステップバンチングによる荒れの無い良好な表面を有するものである。
In the method for producing an SiC smoothed substrate of the present invention, by adding a small amount of an epitaxial growth source gas (silane) at the time of hydrogen etching, the surface roughness of the substrate due to step bunching can be suppressed and the etching amount can be reduced. .
And the SiC smoothing substrate obtained by this invention not only has the surface roughness reduced compared with the smoothing substrate obtained by the conventional method, but has the favorable surface without the roughness by step bunching. Is.
また、エッチング量が従来の水素エッチング条件の約半分まで低減されていることから、エッチング量の増加による基板表面の荒れが生じる危険性が大幅に減り、エピタキシャルウエハ作製前における基板平滑化条件の自由度が大きく広がる。 In addition, since the etching amount is reduced to about half of the conventional hydrogen etching conditions, the risk of the substrate surface becoming rough due to the increased etching amount is greatly reduced, and the substrate smoothing conditions before epitaxial wafer fabrication can be freely set. The degree spreads greatly.
さらに、本発明により得られたＳｉＣ平滑化基板を用いてエピタキシャルウエハを作製することにより、エピタキシャル成長時に問題となっていた三角形状の欠陥の発生によるエピタキシャルウエハの表面の荒れを抑えられる。 Furthermore, by producing an epitaxial wafer using the SiC smoothed substrate obtained by the present invention, it is possible to suppress the surface roughness of the epitaxial wafer due to the generation of triangular defects, which has been a problem during epitaxial growth.
埋めこみ型ショットキーダイオードをはじめとする素子作製プロセスの途中にエピタキシャル成長のプロセスを行う場合、本発明を用いてエピタキシャル成長前の水素エッチング量を減少させることにより、エピタキシャル成長前に作製されていた素子のサイズを変化させることなくエピタキシャル成長プロセスを行うことが可能となる。その結果、設計通りの素子特性を出すことができる。 When performing an epitaxial growth process in the middle of an element manufacturing process such as an embedded Schottky diode, the size of the element manufactured before epitaxial growth can be reduced by reducing the amount of hydrogen etching before epitaxial growth using the present invention. It is possible to perform an epitaxial growth process without change. As a result, device characteristics as designed can be obtained.
また、本発明により得られた表面平坦性の優れたＳｉＣ基板上にＧａＮのＨＥＭＴ構造を作製することにより、ＨＥＭＴ界面が平坦になり、移動度が向上する。 Further, by producing a GaN HEMT structure on the SiC substrate having excellent surface flatness obtained by the present invention, the HEMT interface becomes flat and the mobility is improved.
さらに、本発明のエピタキシャル成長用原料ガスとして用いるシランガス供給ラインを２系統有する半導体製造装置は、基板平滑化からエピタキシャル成長の工程へ移る際にエピタキシャル成長用原料ガスとして用いるシランの流量を変化させずにガス系の切換えのみとなるので、流量調整時における原料ガス流の乱れが発生しない。 Furthermore, the semiconductor manufacturing apparatus having two systems of silane gas supply lines used as the raw material gas for epitaxial growth of the present invention is a gas system without changing the flow rate of the silane used as the raw material gas for epitaxial growth when moving from the substrate smoothing to the epitaxial growth process. Therefore, the material gas flow is not disturbed during flow rate adjustment.
４Ｈ又は６Ｈの結晶構造を持ち（０００１）Ｓｉ面を〈１１−２０〉方向へ０°以上３.５°以下傾けた炭化珪素基板を用い、その平滑化における水素エッチング時に原料ガス（シラン）を添加する。 A silicon carbide substrate having a 4H or 6H crystal structure and having a (0001) Si surface inclined at 0 ° or more and 3.5 ° or less in the <11-20> direction is used as a source gas (silane) during hydrogen etching in its smoothing Added.
水素エッチングは横型の気相化学成長装置（ＣＶＤ装置）を用いて行った。水素を４０slm流した状態で反応管内を２５０mbarの圧力に保持し、高周波誘導加熱を用いてＳｉＣ基板を１６００℃まで加熱した。その後、エピタキシャル成長用原料ガスであるシランを微量添加してエッチングを行った。
また、この実施例１ではα型の結晶構造の代表的な一つである４Ｈの結晶構造を持つ（０００−１）Ｃ面を〈１１−２０〉方向へ８°傾けたＳｉＣ基板を用いた。水素エッチングはシラン：０.７sccmを添加する条件で３０分間行った。
本実施例で得られた平滑化基板においてステップバンチング等の基板表面の荒れは生じておらず、良好であった（図２）。原子間力顕微鏡を用いて平滑化基板の表面粗さの評価を行った結果、水素エッチング前における基板のＲａ：０.８２５nmに対し、Ｒａ：０.２５９nmと大幅に減少していた（図３）。一方、エッチング量は水素のみの条件の約半分まで減少していることが判った。
また、前記基板に代えて（０００−１）Ｃ面を〈１１−２０〉方向へ０°、３.５°、４°、８°傾けたＳｉＣ基板、（０００１）Ｓｉ面を〈１１−２０〉方向へ０°、３.５°、４°、８°傾けたＳｉＣ基板、そして、同じくα型の結晶構造の一つである６Ｈの結晶構造を持ち（０００１）Ｓｉ面を〈１１−２０〉方向へ０°、３.５°傾けたＳｉＣ基板、及び（０００−１）Ｃ面を〈１１−２０〉方向へ０°、３.５°傾けたＳｉＣ基板についても同様の結果を示した。
Hydrogen etching was performed using a horizontal vapor phase chemical growth apparatus (CVD apparatus). The reaction tube was maintained at a pressure of 250 mbar with hydrogen flowing at 40 slm, and the SiC substrate was heated to 1600 ° C. using high-frequency induction heating. Thereafter, etching was performed by adding a small amount of silane which is a raw material gas for epitaxial growth.
In Example 1, a SiC substrate having a (000-1) C plane having a 4H crystal structure, which is one of the α-type crystal structures, tilted by 8 ° in the <11-20> direction was used. . The hydrogen etching was performed for 30 minutes under the condition of adding 0.7 sccm of silane.
In the smoothed substrate obtained in this example, the surface of the substrate, such as step bunching, was not rough and was good (FIG. 2). As a result of evaluating the surface roughness of the smoothed substrate using an atomic force microscope, Ra: 0.859 nm before the hydrogen etching was significantly reduced to Ra: 0.259 nm (FIG. 3). ). On the other hand, it was found that the etching amount was reduced to about half of the hydrogen-only condition.
Further, instead of the substrate, the (000-1) C surface is tilted by 0 °, 3.5 °, 4 °, 8 ° in the <11-20> direction, and the (0001) Si surface is <11-20. > SiC substrate tilted by 0 °, 3.5 °, 4 °, and 8 ° in the direction, and a 6H crystal structure, which is also one of α-type crystal structures, with a (0001) Si surface of <11-20 The same results were obtained for a SiC substrate tilted by 0 ° and 3.5 ° toward the> direction, and a SiC substrate whose (000-1) C plane was tilted by 0 ° and 3.5 ° toward the <11-20> direction. .
前記実施例１で得られた４Ｈの結晶構造を持ち（０００−１）Ｃ面を〈１１−２０〉方向へ８°傾けたＳｉＣ基板の平滑化基板を用いてＣとＳｉの組成比が３、厚さ３μmのエピタキシャルウエハを作製した。エピタキシャル成長は、水素エッチングが終了した時点で原料ガスを平滑化基板作製用からエピタキシャルウエハ作製用のラインに切換えることで開始する（図４及び図５）。原料ガスの流量はシラン：６.６７sccm、プロパン：６.６７sccmである。
作製されたエピタキシャルウエハの表面は、平滑化基板と同様に三角形状の欠陥やステップバンチング等の発生は無く良好であった（図６）。
また、前記基板に代えて（０００−１）Ｃ面を〈１１−２０〉方向へ０°、３.５°、４°、８°傾けた基板、（０００１）Ｓｉ面を〈１１−２０〉方向へ０°、３.５°、４°、８°傾けたＳｉＣ基板、６Ｈの結晶構造を持ち（０００１）Ｓｉ面を〈１１−２０〉方向へ０°、３.５°傾けたＳｉＣ基板、及び（０００−１）Ｃ面を〈１１−２０〉方向へ０°、３.５°傾けたＳｉＣ基板を用いたエピタキシャルウエハの表面も良好であった。さらに、本実施例で得られた平滑化基板を用いて作製したＧａＮのヘテロエピタキシャルウエハの表面も同様であった。
さらに、水素エッチングを行う際に用いた気相化学成長装置（ＣＶＤ装置）の原料ガスの配管をエピタキシャル成長用と基板の平滑化用の２系統とすることにより、基板平滑化からエピタキシャル成長の工程へ移る際に原料ガスの流量を変化させずにガス系の切換えのみとなるので、流量調整時における原料ガス流の乱れが発生しなかった（図５）。
The composition ratio of C and Si is 3 using the smoothed substrate of the SiC substrate having the 4H crystal structure obtained in Example 1 and having the (000-1) C plane inclined by 8 ° in the <11-20> direction. An epitaxial wafer having a thickness of 3 μm was prepared. Epitaxial growth is started by switching the source gas from the smoothing substrate preparation line to the epitaxial wafer preparation line when hydrogen etching is completed (FIGS. 4 and 5). The flow rates of the source gases are silane: 6.67 sccm and propane: 6.67 sccm.
The surface of the produced epitaxial wafer was good with no occurrence of triangular defects, step bunching or the like, as with the smoothing substrate (FIG. 6).
Further, instead of the substrate, the (000-1) C plane is tilted in the <11-20> direction by 0 °, 3.5 °, 4 °, 8 °, and the (0001) Si plane is <11-20>. SiC substrate tilted by 0 °, 3.5 °, 4 °, 8 ° to the direction, SiC substrate having a 6H crystal structure and a (0001) Si surface tilted by 0 °, 3.5 ° to the <11-20> direction The surface of the epitaxial wafer using the SiC substrate in which the (000-1) C plane was tilted by 0 ° and 3.5 ° in the <11-20> direction was also good. Further, the surface of the GaN heteroepitaxial wafer produced using the smoothed substrate obtained in this example was the same.
Furthermore, by changing the source gas piping of the vapor phase chemical growth apparatus (CVD apparatus) used for hydrogen etching to two systems for epitaxial growth and substrate smoothing, the process shifts from substrate smoothing to epitaxial growth. In this case, since only the gas system is switched without changing the flow rate of the raw material gas, the turbulence of the raw material gas flow does not occur during the flow rate adjustment (FIG. 5).
ＳｉＣの結晶成長に関与し、エピタキシャルウエハ作製時に用いる。 It participates in SiC crystal growth and is used for epitaxial wafer fabrication.
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| US9679767B2 (en) | 2012-06-19 | 2017-06-13 | Showa Denko K.K. | SiC epitaxial wafer and method for manufacturing the same |
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