CN104851781A - Preparation method of N-type low-drift-angle silicon carbide epitaxial wafer - Google Patents

Preparation method of N-type low-drift-angle silicon carbide epitaxial wafer Download PDF

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CN104851781A
CN104851781A CN201510310116.XA CN201510310116A CN104851781A CN 104851781 A CN104851781 A CN 104851781A CN 201510310116 A CN201510310116 A CN 201510310116A CN 104851781 A CN104851781 A CN 104851781A
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silicon carbide
drift angle
preparation
growth
epitaxial wafer
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CN104851781B (en
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钮应喜
杨霏
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State Grid Corp of China SGCC
State Grid Shanghai Electric Power Co Ltd
Smart Grid Research Institute of SGCC
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State Grid Corp of China SGCC
State Grid Shanghai Electric Power Co Ltd
Smart Grid Research Institute of SGCC
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02428—Structure
    • H01L21/0243—Surface structure

Abstract

The invention provides a preparation method of an N-type low-drift-angle silicon carbide epitaxial wafer. The method comprises the following steps: preparation of a substrate, online etching of the substrate, growing of a buffer layer and the growing of an epitaxial layer, wherein the growing of the epitaxial layer employs a method of "growing, etching, blowing and regrowing". The method provided by the invention effectively reduces the base dislocation density and reduces deposits in a cavity during the process of growing the N-type low-drift-angle silicon carbide epitaxial wafer, accordingly reduces the triangle defect caused by foreign particles, improves the quality of a silicon carbide epitaxial material, and is low in processing cost, thereby being suitable for industrial production.

Description

The preparation method of a kind of N-type low drift angle silicon carbide epitaxial wafer
Technical field
The present invention relates to a kind of preparation method of semi-conducting material, be specifically related to the preparation method of a kind of N-type low drift angle silicon carbide epitaxial wafer.
Background technology
Carborundum chemical inertness is good, high temperature resistant, radioresistance, has huge application potential in high-power electric and electronic field.Carborundum is the material of the multiple crystal habit of a kind of homogeneity, and the crystalline form had been found that has exceeded 250 kinds.In numerous SiC polytypes, 4H-SiC is with its energy gap large (3.26eV), the high (900cm of mobility 2/ Vs) and anisotropy is less etc., and superior function is considered to be more suitable for manufacturing high-power high back-pressure electronic device.
8 ° of current SiC and 4 ° of drift angle epitaxial growth " step control extension " technology, its essence is exactly the flowing of atomic steps.This technology not only effectively controls the crystal formation of SiC, also reduces the epitaxial growth temperature of SiC, grows the SiC epitaxial material of surface-brightening at 1500 DEG C, makes epitaxial growth temperature reduce nearly 300 DEG C, reaches the object reduced costs.
Along with the increase of SiC substrate wafer diameter, develop into 3 inches and 4 inches from 2 inches, and even 6 inches, monotectic reduces extremely important to the size of angle for SiC cost, because angle is larger, the number of wafers that can obtain from a SiC crystal ingot is fewer.And from the angle of SiC extension, monotectic also has a significant impact to the quality of size to epitaxial material of angle.
According to the current situation of wafer size, people more and more pay close attention to the epitaxial growth of SiC on the substrate of crystal orientation, low drift angle, and according to bibliographical information, the epitaxially grown surface roughness in the low drift angle of carborundum is difficult to control, in addition high-voltage power electronic device is sayed, need again super thick silicon carbide epitaxial layers.Therefore, the super thick epitaxial loayer growing low drift angle needs the difficult problem solved to be exactly while reduction defect, controls the surface topography of epitaxial wafer.
Summary of the invention
For the problems referred to above, the object of this invention is to provide the preparation method of a kind of N-type low drift angle silicon carbide epitaxy, can basal plane dislocation density be reduced, reduce chamber hortungskoriper, and effectively reduce step gathering, reduce surface roughness.
To achieve these goals, the present invention takes following technical scheme:
A preparation method for N-type low drift angle silicon carbide epitaxial wafer, comprises the following steps:
1) online etched substrate: the silicon carbide substrates of placing drift angle < 8 °, in reative cell, vacuumizes, passes into H respectively with the flow of 40 ~ 80L/min and 5 ~ 10L/min 2and HCl, under 20-60mbar pressure and 1510 ~ 1710 DEG C of temperature, etch 5 ~ 20min;
2) growth of resilient coating: stop passing into HCl, passes into grown silicon source, growth carbon source and N with the flow of 6 ~ 10mL/min, 3 ~ 5mL/min and 1500 ~ 1800mL/min respectively 2dopant, the resilient coating that growth 0.2 ~ 5 μm is thick at 1500 ~ 1680 DEG C of temperature and 20 ~ 100mbar pressure;
3) growth of epitaxial loayer
A grows: pass into H with the flow of 40 ~ 80L/min, 10 ~ 40mL/min, 5 ~ 20mL/min and 800 ~ 1500mL/min respectively 2, grown silicon source, growth carbon source and N 2dopant, the epitaxial loayer that growth 5 ~ 50 μm is thick at 1500 ~ 1680 DEG C of temperature and 20 ~ 100mbar pressure;
B etches: stop respectively passing into silicon source, carbon source and N 2, at 1510 ~ 1710 DEG C, maintain 2 ~ 5min; HCl is passed into, etching 2 ~ 5min with 5 ~ 10L/min flow;
C brushes: after stopping logical HCl, blow H with the flow of 45 ~ 90mL/min 22 ~ 10min;
D regrowth: repeat step a grown epitaxial layer to 5 ~ 200 μm.
First optimal technical scheme of the preparation method of described N-type low drift angle silicon carbide epitaxial wafer, the drift angle of described silicon carbide substrates is 2 °.
Second optimal technical scheme of the preparation method of described N-type low drift angle silicon carbide epitaxial wafer, the drift angle of described silicon carbide substrates is 4 °.
3rd optimal technical scheme of the preparation method of described N-type low drift angle silicon carbide epitaxial wafer, described backing material is 4H-SiC or 6H-SiC.
4th optimal technical scheme of the preparation method of described N-type low drift angle silicon carbide epitaxial wafer, described grown silicon source is SiH 4or SiHCl 3, growth carbon source is C 2h 4or C 3h 8.
5th optimal technical scheme of the preparation method of described N-type low drift angle silicon carbide epitaxial wafer, repeating said steps 3) in b to Step d.
6th optimal technical scheme of the preparation method of described N-type low drift angle silicon carbide epitaxial wafer, the number of times of described repetition is 0 ~ 30 time.
7th optimal technical scheme of the preparation method of described N-type low drift angle silicon carbide epitaxial wafer, the number of times of described repetition is 0 ~ 10 time.
8th optimal technical scheme of the preparation method of described N-type low drift angle silicon carbide epitaxial wafer, the growth thickness of described epitaxial loayer is 5 ~ 30 μm.
9th optimal technical scheme of the preparation method of described N-type low drift angle silicon carbide epitaxial wafer, the growth thickness of described epitaxial loayer is 30 ~ 200 μm.
Compared with immediate prior art, technical scheme provided by the invention has following excellent effect:
1. silicon carbide substrates provided by the invention has the etch pit of large basal plane dislocation, makes basal plane dislocation in epitaxy technique more easily be converted into screw dislocation, reaches the object reducing basal plane dislocation density;
2. the defect reducing blemish particle and caused by particle, especially triangle defect;
3. due to corrasion, extended the growth chamber cleaning frequency, greatly reduce growth cost and improve growth efficiency;
4. method provided by the invention, manufacture method is simple, good process repeatability, is applicable to suitability for industrialized production;
5. surperficial without step clustering phenomena based on super thick silicon carbide epitaxy provided by the invention.
Accompanying drawing explanation
Fig. 1: schematic flow sheet of the present invention.
Fig. 2: conventional method prepares the surface topography of epitaxial wafer
Fig. 3: the atomic force microscope figure of embodiment 1 epitaxial wafer
Fig. 4: the atomic force microscope figure of embodiment 2 epitaxial wafer
Fig. 5: the atomic force microscope figure of embodiment 3 epitaxial wafer
Fig. 6: the atomic force microscope figure of embodiment 4 epitaxial wafer
Fig. 7: the atomic force microscope figure of embodiment 5 epitaxial wafer
Embodiment
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below.
Embodiment 1
A kind of N-type low drift angle thickness 15 μm of silicon carbide epitaxy piece preparation methods, comprise the following steps:
1) online etched substrate: prepare the 4H-SiC substrate that drift angle is 4 °, vacuumize, passing into flow is the hydrogen of 40L/min and the HCl of 5L/min, and reative cell internal pressure is 40mbar, and temperature is 1680 DEG C, maintains 5 minutes;
2) growth of resilient coating: stop passing into HCl, be cooled to 1650 DEG C, pass into the SiH that flow is 6mL/min 4with the C of 3mL/min 3h 8, take flow as the N of 1500mL/min 2for dopant, growth pressure is 40mbar, grows 0.4 μm of thick resilient coating;
3) growth of epitaxial loayer
A grows: by the hydrogen of 40L/min flow, the SiH of 10mL/min 4with the C of 5mL/min 3h 8pass into reative cell, keep temperature to be 1650 DEG C, pressure 40mbar, with the N of 800mL/min flow 2for dopant, grow 6 μm of thick epitaxial loayers;
B etches: stop silicon source, the passing into of carbon source and dopant, be warming up to 1680 DEG C, maintain 2 minutes; Pass into the HCl of 5L/min flow, maintain 1 minute;
C brushes: stop logical HCl, regulates hydrogen flowing quantity to 45mL/min, brushes 5 minutes;
D regrowth: gas flow, the temperature and pressure consistent with step a are set, continued growth epitaxial loayer to 15 μm.
Embodiment 2
A kind of N-type low drift angle thickness 30 μm of silicon carbide epitaxy preparation methods, comprise the following steps:
1) online etched substrate: prepare the 4H-SiC substrate that drift angle is 2 °, vacuumize, passing into flow is the hydrogen of 40L/min and the HCl of 5L/min, and reative cell internal pressure is 40mbar, and temperature is 1680 DEG C, maintains 5 minutes;
2) growth of resilient coating: stop passing into HCl, be cooled to 1650 DEG C, pass into the SiH that flow is 6mL/min 4with the C of 3mL/min 3h 8, take flow as the N of 1500mL/min 2for dopant, growth pressure is 40mbar, grow 1 μm of thick resilient coating;
3) growth of epitaxial loayer
A grows: by the hydrogen of 40L/min flow, the SiH of 10mL/min 4with the C of 5mL/min 3h 8pass into reative cell, keep temperature to be 1650 DEG C, pressure 40mbar, with the N of 800mL/min flow 2for dopant, grow 10 μm of thick epitaxial loayers;
B etches: stop silicon source, the passing into of carbon source and dopant, be warming up to 1680 DEG C, maintain 2 minutes; Pass into the HCl of 5L/min flow, maintain 1 minute;
C brushes: stop logical HCl, regulates hydrogen flowing quantity to 45mL/min, brushes 5 minutes;
D regrowth: gas flow, the temperature and pressure consistent with step a are set, continued growth epitaxial loayer to 20 μm.
E etches: stop silicon source, the passing into of carbon source and dopant, be warming up to 1680 DEG C, maintain 2 minutes; Pass into the HCl of 5L/min flow, maintain 1 minute;
F brushes: stop logical HCl, regulates hydrogen flowing quantity to 45mL/min, brushes 3 minutes;
G regrowth: gas flow, the temperature and pressure consistent with step a are set, continued growth epitaxial loayer to 30 μm.
Embodiment 3
A kind of N-type low drift angle thickness 80 μm of silicon carbide epitaxy preparation methods, comprise the following steps:
1) online etched substrate: prepare the 4H-SiC substrate that drift angle is 4 °, vacuumize, passing into flow is the hydrogen of 40L/min and the HCl of 5L/min, and reative cell internal pressure is 40mbar, and temperature is 1680 DEG C, maintains 5 minutes;
2) growth of resilient coating: stop passing into HCl, be cooled to 1650 DEG C, pass into the SiH that flow is 6mL/min 4with the C of 3mL/min 3h 8, take flow as the N of 1500mL/min 2for dopant, growth pressure is 40mbar, grows 1.5 μm of thick resilient coatings;
3) growth of epitaxial loayer
A grows: by the hydrogen of 40L/min flow, the SiH of 10mL/min 4with the C of 5mL/min 3h 8pass into reative cell, keep temperature to be 1650 DEG C, pressure 40mbar, with the N of 800mL/min flow 2for dopant, grow 10 μm of thick epitaxial loayers;
B etches: stop silicon source, the passing into of carbon source and dopant, be warming up to 1680 DEG C, maintain 2 minutes; Pass into the HCl of 5L/min flow, maintain 1 minute;
C brushes: stop logical HCl, regulates hydrogen flowing quantity to 45mL/min, brushes 2 minutes;
D regrowth: gas flow, the temperature and pressure consistent with step a are set, continued growth epitaxial loayer to 30 μm.
E etches: stop silicon source, the passing into of carbon source and dopant, be warming up to 1680 DEG C, maintain 2 minutes; Pass into the HCl of 5L/min flow, maintain 1 minute;
F brushes: stop logical HCl, regulates hydrogen flowing quantity to 45mL/min, brushes 3 minutes;
G regrowth: gas flow, the temperature and pressure consistent with step a are set, continued growth epitaxial loayer to 50 μm.
H etches: stop silicon source, the passing into of carbon source and dopant, be warming up to 1680 DEG C, maintain 2 minutes; Pass into the HCl of 5L/min flow, maintain 1 minute;
I brushes: stop logical HCl, regulates hydrogen flowing quantity to 45mL/min, brushes 3 minutes;
J regrowth: gas flow, the temperature and pressure consistent with step a are set, continued growth epitaxial loayer to 80 μm.
Embodiment 4
A kind of N-type low drift angle thickness 100 μm of silicon carbide epitaxy preparation methods, comprise the following steps:
1) online etched substrate: prepare the 4H-SiC substrate that drift angle is 2 °, vacuumize, passing into flow is the hydrogen of 40L/min and the HCl of 5L/min, and reative cell internal pressure is 40mbar, and temperature is 1680 DEG C, maintains 5 minutes;
2) growth of resilient coating: stop passing into HCl, be cooled to 1650 DEG C, pass into the SiH that flow is 6mL/min 4with the C of 3mL/min 3h 8, take flow as the N of 1500mL/min 2for dopant, growth pressure is 40mbar, grows 3 μm of thick resilient coatings;
3) growth of epitaxial loayer
A grows: by the hydrogen of 40L/min flow, the SiH of 10mL/min 4with the C of 5mL/min 3h 8pass into reative cell, keep temperature to be 1650 DEG C, pressure 40mbar, with the N of 800mL/min flow 2for dopant, grow 10 μm of thick epitaxial loayers;
B etches: stop silicon source, the passing into of carbon source and dopant, be warming up to 1680 DEG C, maintain 2 minutes; Pass into the HCl of 5L/min flow, maintain 1 minute;
C brushes: stop logical HCl, regulates hydrogen flowing quantity to 45mL/min, brushes 2 minutes;
D regrowth: gas flow, the temperature and pressure consistent with step a are set, continued growth epitaxial loayer to 40 μm.
E etches: stop silicon source, the passing into of carbon source and dopant, be warming up to 1680 DEG C, maintain 2 minutes; Pass into the HCl of 5L/min flow, maintain 1 minute;
F brushes: stop logical HCl, regulates hydrogen flowing quantity to 45mL/min, brushes 3 minutes;
G regrowth: gas flow, the temperature and pressure consistent with step a are set, continued growth epitaxial loayer to 70 μm.
H etches: stop silicon source, the passing into of carbon source and dopant, be warming up to 1680 DEG C, maintain 2 minutes; Pass into the HCl of 5L/min flow, maintain 1 minute;
I brushes: stop logical HCl, regulates hydrogen flowing quantity to 45mL/min, brushes 2 minutes;
J regrowth: gas flow, the temperature and pressure consistent with step a are set, continued growth epitaxial loayer to 100 μm.
Embodiment 5
A kind of N-type low drift angle thickness 180 μm of silicon carbide epitaxy preparation methods, comprise the following steps:
1) online etched substrate: prepare the 4H-SiC substrate that drift angle is 2 °, vacuumize, passing into flow is the hydrogen of 40L/min and the HCl of 5L/min, and reative cell internal pressure is 40mbar, and temperature is 1680 DEG C, maintains 5 minutes;
2) growth of resilient coating: stop passing into HCl, be cooled to 1650 DEG C, pass into the SiH that flow is 6mL/min 4with the C of 3mL/min 3h 8, take flow as the N of 1500mL/min 2for dopant, growth pressure is 40mbar, grows 5 μm of thick resilient coatings;
3) growth of epitaxial loayer
A grows: by the hydrogen of 40L/min flow, the SiH of 10mL/min 4with the C of 5mL/min 3h 8pass into reative cell, keep temperature to be 1650 DEG C, pressure 40mbar, with the N of 800mL/min flow 2for dopant, grow 10 μm of thick epitaxial loayers;
B etches: stop silicon source, the passing into of carbon source and dopant, be warming up to 1680 DEG C, maintain 2 minutes; Pass into the HCl of 5L/min flow, tie up 1 minute;
C brushes: stop logical HCl, regulates hydrogen flowing quantity to 45mL/min, brushes 3 minutes;
D regrowth: gas flow, the temperature and pressure consistent with step a are set, continued growth epitaxial loayer to 30 μm.
E etches: stop silicon source, the passing into of carbon source and dopant, be warming up to 1680 DEG C, maintain 2 minutes; Pass into the HCl of 5L/min flow, maintain 12 minutes;
F brushes: stop logical HCl, regulates hydrogen flowing quantity to 45mL/min, brushes 3 minutes;
G regrowth: gas flow, the temperature and pressure consistent with step a are set, continued growth epitaxial loayer to 50 μm.
H etches: stop silicon source, the passing into of carbon source and dopant, be warming up to 1680 DEG C, maintain 2 minutes; Pass into the HCl of 5L/min flow, maintain 2 minutes;
I brushes: stop logical HCl, regulates hydrogen flowing quantity to 45mL/min, brushes 5 minutes;
J regrowth: gas flow, the temperature and pressure consistent with step a are set, continued growth epitaxial loayer to 80 μm.
K etches: stop silicon source, the passing into of carbon source and dopant, be warming up to 1680 DEG C, maintain 2 minutes; Pass into the HCl of 5L/min flow, maintain 1 minute;
L brushes: stop logical HCl, regulates hydrogen flowing quantity to 45mL/min, brushes 2 minutes;
M regrowth: gas flow, the temperature and pressure consistent with step a are set, continued growth epitaxial loayer to 120 μm.
N etches: stop silicon source, the passing into of carbon source and dopant, be warming up to 1680 DEG C, maintain 2 minutes; Pass into the HCl of 5L/min flow, maintain 1 minute;
O brushes: stop logical HCl, regulates hydrogen flowing quantity to 45mL/min, brushes 3 minutes;
P regrowth: gas flow, the temperature and pressure consistent with step a are set, continued growth epitaxial loayer to 150 μm.
Q etches: stop silicon source, the passing into of carbon source and dopant, be warming up to 1680 DEG C, maintain 2 minutes; Pass into the HCl of 5L/min flow, maintain 1 minute;
R brushes: stop logical HCl, regulates hydrogen flowing quantity to 45mL/min, brushes 3 minutes;
S regrowth: gas flow, the temperature and pressure consistent with step a are set, continued growth epitaxial loayer to 180 μm.
Surface roughness is tested
By atomic force microscope, silicon carbide epitaxial wafer roughness prepared by embodiments of the invention 1-5 is tested, test result as shown in fig. 3 to 7, the epitaxial wafer phase specific surface prepared with conventional method is without step clustering phenomena, and surface roughness root mean square is all within 0.5nm.
Above embodiment is only in order to illustrate that technical scheme of the present invention is not intended to limit; those of ordinary skill in the field are to be understood that; can modify to the specific embodiment of the present invention with reference to above-described embodiment or equivalent to replace, these do not depart from any amendment of spirit and scope of the invention or equivalently to replace within the claims that all awaits the reply in application.

Claims (10)

1. a preparation method for N-type low drift angle silicon carbide epitaxial wafer, comprises the following steps:
1) online etched substrate: the silicon carbide substrates of placing drift angle < 8 °, in reative cell, vacuumizes, passes into H respectively with the flow of 40 ~ 80L/min and 5 ~ 10L/min 2and HCl, under 20-60mbar pressure and 1510 ~ 1710 DEG C of temperature, etch 5 ~ 20min;
2) growth of resilient coating: stop passing into HCl, passes into grown silicon source, growth carbon source and N with the flow of 6 ~ 10mL/min, 3 ~ 5mL/min and 1500 ~ 1800mL/min respectively 2dopant, the resilient coating that growth 0.2 ~ 5 μm is thick at 1500 ~ 1680 DEG C of temperature and 20 ~ 100mbar pressure;
3) growth of epitaxial loayer
A grows: pass into H with the flow of 40 ~ 80L/min, 10 ~ 40mL/min, 5 ~ 20mL/min and 800 ~ 1500mL/min respectively 2, grown silicon source, growth carbon source and N 2dopant, the epitaxial loayer that growth 5 ~ 50 μm is thick at 1500 ~ 1680 DEG C of temperature and 20 ~ 100mbar pressure;
B etches: stop respectively passing into silicon source, carbon source and N 2, at 1510 ~ 1710 DEG C, maintain 2 ~ 5min; HCl is passed into, etching 2 ~ 5min with 5 ~ 10L/min flow;
C brushes: after stopping logical HCl, blow H with the flow of 45 ~ 90mL/min 22 ~ 10min;
D regrowth: repeat step a grown epitaxial layer to 5 ~ 200 μm.
2. the preparation method of N-type according to claim 1 low drift angle silicon carbide epitaxial wafer, is characterized in that the drift angle of described silicon carbide substrates is 2 °.
3. the preparation method of N-type according to claim 1 low drift angle silicon carbide epitaxial wafer, is characterized in that the drift angle of described silicon carbide substrates is 4 °.
4. the preparation method of N-type according to claim 1 low drift angle silicon carbide epitaxial wafer, is characterized in that described backing material is 4H-SiC or 6H-SiC.
5. the preparation method of N-type according to claim 1 low drift angle silicon carbide epitaxial wafer, is characterized in that described grown silicon source is SiH 4or SiHCl 3, growth carbon source is C 2h 4or C 3h 8.
6. the preparation method of N-type according to claim 1 low drift angle silicon carbide epitaxial wafer, is characterized in that repeating said steps 3) in b to Step d.
7. the preparation method of N-type according to claim 6 low drift angle silicon carbide epitaxial wafer, is characterized in that the number of times of described repetition is 0 ~ 30 time.
8. the preparation method of N-type according to claim 6 low drift angle silicon carbide epitaxial wafer, is characterized in that the number of times of described repetition is 0 ~ 10 time.
9. the preparation method of N-type according to claim 1 low drift angle silicon carbide epitaxial wafer, is characterized in that the growth thickness of described epitaxial loayer is 5 ~ 30 μm.
10. the preparation method of N-type according to claim 1 low drift angle silicon carbide epitaxial wafer, is characterized in that the growth thickness of described epitaxial loayer is 30 ~ 100 μm.
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CN105244255A (en) * 2015-08-27 2016-01-13 中国电子科技集团公司第十三研究所 Silicon carbide epitaxial material and production method thereof
CN105354352A (en) * 2015-09-25 2016-02-24 国网智能电网研究院 4H-SiC three-dimensional atomic structure model with deflection angle of 8 degrees, construction method therefor and application thereof
CN106910673A (en) * 2017-03-02 2017-06-30 东莞市天域半导体科技有限公司 A kind of epitaxy method for reducing SiC epitaxial wafer surface triangles defect
WO2018108006A1 (en) * 2016-12-15 2018-06-21 中国电子科技集团公司第五十五研究所 Method for reducing silicon carbide epitaxial basal plane dislocation density
CN111005068A (en) * 2019-12-09 2020-04-14 中国电子科技集团公司第五十五研究所 Method for growing high-surface-quality ultra-thick IGBT structure silicon carbide epitaxial material
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